562935 五、發明說明（2) X一和Y-方向移動，而該 測器的底下。此外，探S置的襯墊5則置在該探測卡的探 上移動，以使探測器拉飽器1 3可向下移動或該台墩1 4可向 放電訊號來量測該裝置到该裝置的襯墊5。該探測站施 波可銷（pogo p i η ) 1 1僂二特丨生該電訊號係經過所謂的 從電路板經過電佈線傳^，探測卡的電路板1 2。該訊號係 接到探測器1 3的尖端部^探測器’電佈線係從電路板連 去。從該裝置來的訊；“f後從探測器傳送到該裝置 圖5中所示的傳統式；：尤禮盾反方向傳到探測站。 在傳統的型式中，有尖冓#就^所謂的水平式或鶴針式。 端部分係係與裝置的的^針13是固定在站上，尖 但是，半導體穿詈^墊接觸來篁測該裝置的電特性。 十個微in; 越來越小’而襯塾具有數 統式的鶴針寬度是在數；：f:=間：。-向用在傳 樣。還有—也^觸或量測所有需要驗證電特性的電路型 位置上去。匕難u準確地將探測器放到想要的小襯墊的 式^來丄有人提議用垂直式探測器來改善傳統式。在垂直 該小探測器是配置在基體i， = 以安排復容的掇測怒 ^乍旧工間中可 因為探測考θ很#此外，探測卡的電特性已獲改善， 窄At、、隹。疋、且的。還有重要的一點是，所有的探、'則哭 二；！：地接，到農置的襯墊…，每-探測器二 襯㈡壓緊與襯塾的接·…保探測ΐ和 之間有準確的接觸。此外，探測器必需有彈性。如果562935 V. Description of the invention (2) The X- and Y- directions move, and the bottom of the detector. In addition, the pad 5 placed on the probe is moved on the probe of the probe card, so that the detector feeder 13 can be moved downward or the platform pier 14 can discharge the signal to measure the device to the装置 的 垫 5。 Pad 5 of the device. The detection station is capable of generating waves (pogo p i η) 1 1 2. The signal is transmitted through the so-called electrical wiring from the circuit board, and the circuit board 12 of the detection card. This signal is connected to the tip of the detector 13 and the detector's electrical wiring is connected from the circuit board. The message from the device; "After the f is transmitted from the detector to the device in the traditional style shown in Figure 5 ;: You Lidun transmitted to the detection station in the opposite direction. In the traditional style, there is 尖 冓 # 就 ^ The horizontal or crane pin type. The end part is fixed to the device's ^ pin 13 is fixed on the station, but the semiconductor penetrating pad touches the electrical characteristics of the device. Ten micro-in; The smaller the number of cranes, the more the width of the crane needle is within the number;: f: = between :.-used for sample transfer. Go up. It is difficult to accurately place the detector on the desired small pad type. Some people have proposed to use a vertical detector to improve the traditional type. In the vertical, the small detector is arranged on the base i, = to arrange The speculative annoyance of the complex capacity can be detected in the old workshop because the detection test θ is very # In addition, the electrical characteristics of the detection card have been improved, narrow At ,, 隹. 疋, and. Another important point is that all Detect, 'then cry two;!: Ground connection, to the farm's pad ..., each-detector two liners are pressed tightly to the liner ... Have accurate contact between the addition, the detector must have elasticity. If
第7頁 562935 五、發明說明（3) 探測器有彈性而能作彈性變形，那麼即使在探測器的尖端 部分有多樣的處理方式的時候，或者在襯墊的位置有所變 動的時候，也就是，該裝置所在的半導體晶片受扭曲的時 候’所需的量測仍然能夠圓滿完成。這些探測器的型式， 發表於美國專利第4,961，052、5，172,050和5,723,347號 中。 赞明摘要 本發明 根據 &機械 測器在 裝置的 #洩漏 原來的 的量測 為這 與該裝 包括： 器，固 分；及 電路板 部分和 ϋ ，以 的極限 強度 ’製造出一 並提供一種 一基體上。該固定 襯墊量測該裝置的 電流的流動，並要 形狀而且必須在一 ，不致 一目的 置的襯 一電絕 定在該 一佈線 上，其 刻^一型 該裝置 使該探 之前， 變形。 ，本發明提 墊接觸，以 緣基體，固 絕緣基體上 部分，作成 中該探測器 樣制定部分 的一襯墊接 測器的變形 加以阻止。 種垂直式探測器具有適當的彈性 探測卡’其中安裝有高密度的探 在探測卡上的探測器，能藉接觸 電特性。還要求在探測器之間沒 求$測器必須在測量之後恢復到 既定的壽命期間内，例如卅萬次 供一種探測 s;測一裝置 定在一電路 ’該具彈性 於該探測器 的製成，係 以外的部分 觸，而該絕 ’可在該探 卡，藉 的電特 板上； 的探測 Ν該絕 使用光 ’該探 緣基體 測器到 多數個探測器 性。該探測卡 多數個探測 器有一尖端部 緣基體、和該 刻術以型樣制 測器的一尖端 控制著該探測 達一彈性變形Page 7 562935 V. Description of the invention (3) The detector is elastic and can be elastically deformed, even when the tip of the detector has various processing methods, or when the position of the gasket changes, That is, when the semiconductor wafer on which the device is located is twisted, the required measurement can still be successfully completed. These detector types are published in U.S. Patent Nos. 4,961,052, 5,172,050, and 5,723,347. Zan Ming Abstract The present invention according to the original measurement of the #leakage of the mechanical measuring device in the device is that this device includes: the device, the solid content; and the circuit board part and the plutonium, manufactured with the ultimate strength 'made together One on a substrate. The fixed pad measures the current flow of the device, and it must be shaped and must be in a position so that a purposed liner is not electrically fixed on the wiring. The engraved type of the device deforms the probe before it is deformed. . In the present invention, the pad contact is used to prevent the deformation of a pad connector of the detector by making a base substrate and fixing the upper portion of the insulating substrate to make a portion of the detector sample. This type of vertical detector has appropriate elasticity. The detection card 'is a detector in which a high-density probe is mounted on the detection card, which can make use of the electrical contact characteristics. It is also required that there is no requirement between the detectors that the detector must be restored to a predetermined life period after the measurement, such as 10,000 times for a detection s; the measurement device is set in a circuit, which is flexible to the detector's system It is possible that the parts other than the system are touched, and the detector 'can be used on the probe card and the electric special board; the detector N should use light' and the probe base detector to most detectors. The probe card has a plurality of probes having a tip edge base body, and a tip of the pattern-formed detector controls the probe to achieve an elastic deformation.
第8頁 562935 五、發明說明（4) 此外，根據本發明，—~ — 量測該裝置的電特性。二，測卡，藉接觸〜梦 料製作’· -探測器部分該用探=包括：-4置二= 體上，包含一與該裝置一，導體材料製作，—、、材 該尖端部分的主體部分，襯墊接觸的尖端部分^在該基 部分’用二導電材料製：：該尖端部分； 對圖式之簡略說明的親塾的電訊號。刀上，傳導來 本發明的前述和其它目、 發明之一較佳具體薈 的、特色和好處，；^ i -如附隨圖式示的說明’將變得更為：：以：巧 圖1為根據本發明之一、 Μ员例 圖2a為根據本發明之〜一探測卡之透視圖。 圖2b為根據本發明之一探測卡之側視圖。 使用中變形。 一探測卡之側視圖，該探測卡p / 圖3示一矽晶片，其、、 、下匕在 圖4a顯示連接佈線、於：：餘刻之後附接至絕緣基體。 顯示連接佈線部=一：例。 圖5a為一傳統式探 -轭例。 圖5b為-在傳統式探的不意囷。 圖。 υ站中探測器部分的不完整的放大 對目前較佳具體實 圖1展示本發明之一的砰細說明 製作一探測器2而製成實用=。探測卡藉在一絕緣基體1上 __’附帶有一具高強度例如鎢的材 562935 五、發明說明（6) 實例 一有< 11 0 >結晶方向的矽晶片，兩面均予磨光。藉用熱 CVD，物理蒸汽沈積（PVD)，或電漿增強CVD(PECVD)法，在 該矽晶片上沈積氧化矽敷膜或氮化矽敷膜。探測器形成區 域的型樣係用光刻術制定。沈積層經過蝕刻後作為蝕刻ς 的曬相型板。矽層係用使用氫氧化鉀溶液的異向性濕^ 刻術作垂直蝕刻，深度達5—5〇〇微米。矽受蝕刻的一面' 附貼至玻璃基體上，而且是在卜5個大氣壓、3〇〇 —μ 條件下，以融化結合。另一辦法，矽材和玻璃基體可 200-50 (TC、1 00 —2 0 00 ν&1-1〇〇 微安（mA)的條件下以 極結合。結合層的形狀顯示於圖3而蝕刻的 結合之後，如果石夕層的寬度超過所需的值 層結合表面20的一面21即予以打磨以調整矽層的。' = 層的寬度係根據所要製作的探測器的大小來決定。、X石 + t 2 化石夕敷膜或氮化石夕敷膜係用熱C VD法、物理一 沈積法（PVD)、或電漿增強cv =理条 側面21上。尖媸邱八f # μ , ，女沈積在矽層的 經蝕刻的氧化矽敷膜或氮 ^末制疋。 板。矽層係作垂直蝕刻、菜声、查H被用作蝕刻矽的曬相型 鉀溶液的異向性渴弋^刿二、 微米，藉使用氫氧化 然後，再全部用熱CVD法、物 分3。 增強CVD(PECVD)法，沈積一層氧…化^；^積/(HD)、或電渡 探測器的躯體部分的區域的型樣係藉f ^氮，梦敷膜。 來製作成探測器軀體部分2。蝕刻製曰程可X藉用^定然严蝕刻 稽用使用氫氧化Page 8 562935 V. Description of the invention (4) In addition, according to the present invention, the electrical characteristics of the device are measured. Second, the test card is made by contacting ~ dream material '.--The probe part should be used to detect = including: -4 set two = on the body, including one and the device one, the conductor material is made,-,, the tip part of the The main body part, the tip part that the pad contacts ^ made of two conductive materials at the base part: the tip part; the friendly electric signal which is briefly explained to the drawing. On the knife, the aforementioned and other objectives of the present invention, one of the inventions, the best specific features, advantages and benefits; ^ i-as illustrated with the accompanying drawings' will become more :: with: clever map 1 is an example of a member according to the present invention. FIG. 2a is a perspective view of a probe card according to the present invention. Figure 2b is a side view of a probe card according to the present invention. Deformation during use. A side view of a probing card. The probing card p / FIG. 3 shows a silicon chip, whose connection wiring is shown in FIG. 4 a and is attached to an insulating substrate after a few minutes. Display connection wiring section = 1: Example. Figure 5a shows an example of a conventional yoke. Figure 5b-Unexpected exploration in the traditional style. Illustration. Incomplete magnification of the detector part in the υ station. The present invention is better and more concrete. Fig. 1 shows a detailed description of one of the present inventions. The probe card is borrowed from an insulating substrate 1 with a material with a high strength such as tungsten 562935. 5. Description of the invention (6) Example A silicon wafer with a crystal orientation of < 11 0 > is polished on both sides. By using thermal CVD, physical vapor deposition (PVD), or plasma enhanced CVD (PECVD), a silicon oxide film or a silicon nitride film is deposited on the silicon wafer. The pattern of the detector formation area was developed using photolithography. After the deposition layer is etched, it serves as a photo-etching type plate for etching. The silicon layer is anisotropically wet-etched using a potassium hydroxide solution for vertical etching to a depth of 5 to 500 microns. The etched side of the silicon is affixed to the glass substrate and is melted and bonded at 5 atmospheres and 300-μ. Alternatively, the silicon material and the glass substrate can be bonded extremely in the conditions of 200-50 (TC, 100-2 00 00 v & 1-100 microamperes (mA). The shape of the bonding layer is shown in FIG. 3 and After the etching is combined, if the width of the Shixi layer exceeds the required value, the side 21 of the layer bonding surface 20 is polished to adjust the silicon layer. '= The width of the layer is determined according to the size of the detector to be made., X stone + t 2 fossil evening film or nitride stone evening film is thermal C VD method, physical-deposition method (PVD), or plasma enhanced cv = on the side of the cleats 21. 尖 媸 邱 八 f # μ, , The etched silicon oxide film or nitrogen deposited on the silicon layer is made of silicon. The plate. The silicon layer is used for vertical etching, cooking sound, and the anisotropy of the photo-phase potassium solution used for etching silicon. Second, micron, by using hydroxide, and then all thermal CVD method, material 3. 3. Enhanced CVD (PECVD) method, deposit a layer of oxygen ... ^ product / (HD), or electric detection The shape of the area of the body part of the device is borrowed from nitrogen, and the film is applied to make the body part of the detector 2. The etching process can be borrowed from X, and it must be strictly etched. With hydroxide
第11頁 562935 五、發明說明（7) — 鉀溶液的異向性濕式敍刻術來進行，對該矽層作垂 以達5- 500微米的深度。根據以上的製程，製成該探消^刻 的基本形狀。此外，藉用離子植入或熱擴散將硼 引。 矽質探測器的方法，可另外加用以增強探測器的電^入 性。然後就藉使用沈積法，例如喷灑、蒸發、化風—… 沈積（CVD)與光刻術合用，可製成從尖端部分3到 佈線。佈線可製作在基體探測器安裝所在的—面、的 探測器安裝所在-面的反面、或在多層次的基心 好的探測器裝妥在基體上係附接到電路板。 :用，在基體上連接電路板和佈線， =。圖4a顯示一種製作—洞孔穿過基體，並在： 以導電材料的方法，而圖4b顯示一在探測哭和芙 2真 佈線並對佈線完成線捆綁的方法。 土上作成 測ΐ據ή可在基體上安裝非常均勻而精密配置的探 =測而可在同一時間對許多半導體裝置的電特性力= 測大根據本發明的探測器的長度是报短的，而每^ 測為的大小都很均勻，所以 而母—探 的探測卡。 表作成具有改進的電特性 已ϋ另一個效果是探測卡的長壽命，因為探測+ 势成：：彈性和恢復特性，ϋ因為當探測辱是用1::具有 1成時塑性變形幾不會發生。 木Ν15疋用早晶矽材 雖本發明已就其特別 說將會明自，右奸“虛：貫例加以5兒明，本技藝能者來 有很多種應用和修改可容易地做 ^ J 而且不Page 11 562935 V. Description of the invention (7)-Anisotropic wet engraving of potassium solution is performed, and the silicon layer is drooped to a depth of 5 to 500 microns. According to the above process, the basic shape of the cancellation is made. In addition, boron can be induced by ion implantation or thermal diffusion. The silicon detector method can be added to enhance the electrical performance of the detector. Then, by using deposition methods, such as spraying, evaporation, blasting —... Deposition (CVD) is used in combination with photolithography, and can be made from the tip portion 3 to the wiring. The wiring can be made on the side where the base detector is installed, on the opposite side of the side where the detector is installed, or on a multi-layered base with the detector mounted on the base and attached to the circuit board. : Yes, connect the circuit board and wiring on the substrate, =. Figure 4a shows a method of making a hole through a substrate and using: a conductive material, while Figure 4b shows a method of detecting the wiring and binding of the wiring. It can be installed on the ground, and can be installed on the substrate with a very uniform and precise configuration. It can measure the electrical characteristics of many semiconductor devices at the same time. The length of the detector according to the present invention is short. And each size measured is very uniform, so the mother-probe detection card. The table is made with improved electrical characteristics. Another effect is the long life of the probe card, because the detection + potential is :: elasticity and recovery characteristics, because when the detection shame is used 1 :: has a 10% plastic deformation occur. Although the present invention has been specifically explained about the use of early-crystal silicon materials for wood N15, the right one is "virtual: add 5 examples to the example, there are many applications and modifications for those skilled in the art, and it can be easily done ^ J And not
Mill 562935 五、發明說明（8) 離本發明前述特色的範圍。所以，對於本發明要詮釋為不 限於以上所述的具體實例，但僅受限於後附的申請專利範 圍0Mill 562935 V. Description of the invention (8) Departs from the foregoing features of the present invention. Therefore, the present invention is to be interpreted as not limited to the specific examples described above, but only limited to the scope of the attached patent application.
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