JPH03107772A - Resistance measuring device - Google Patents
Resistance measuring deviceInfo
- Publication number
- JPH03107772A JPH03107772A JP24495089A JP24495089A JPH03107772A JP H03107772 A JPH03107772 A JP H03107772A JP 24495089 A JP24495089 A JP 24495089A JP 24495089 A JP24495089 A JP 24495089A JP H03107772 A JPH03107772 A JP H03107772A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- measured
- sample
- electrodes
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims abstract description 13
- 238000003825 pressing Methods 0.000 claims abstract description 7
- 238000005259 measurement Methods 0.000 abstract description 18
- 239000000523 sample Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 229920001971 elastomer Polymers 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000005060 rubber Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000218645 Cedrus Species 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Measurement Of Resistance Or Impedance (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、抵抗測定装置に関し、特にイオン注入層を有
するウェハ、透明電極シート、サーマルヘッド等の平板
状試料の抵抗を、非破壊的に測定するのに好適な装置に
関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a resistance measuring device, and in particular, a method for non-destructively measuring the resistance of a flat sample such as a wafer having an ion-implanted layer, a transparent electrode sheet, or a thermal head. The present invention relates to a device suitable for measurement.
[従来の技術]
半導体デバイス等の開発においては、ウェハの熱プロセ
ス中におけるシリコン等の抵抗率が変化することに起因
して、形成されたデバイスの電気的特性が設計値から外
れることがあり、これを監視するためにイオン注入層の
抵抗率等の測定を行りている0通常、この測定は、いわ
ゆる4探針法を用いて行なわれ、金属製針状プローブを
被測定試料に対して押圧して測定を行い、測定点が多点
に及ぶ場合には、1箇所の測定を行った後、測定を終え
た被測定点からプローブを翻し、次の被測定点へのプロ
ーブの位置合わせをし、そして、該被測定点にプローブ
を押圧するという操作を行ったのち測定を行うという手
順を繰返していた。[Prior Art] In the development of semiconductor devices, etc., the electrical characteristics of the formed device may deviate from the designed values due to changes in the resistivity of silicon, etc. during the thermal process of the wafer. To monitor this, the resistivity of the ion-implanted layer is measured.Normally, this measurement is performed using the so-called four-probe method, in which a metal needle probe is placed against the sample to be measured. When measuring by pressing and measuring at multiple points, after measuring one point, turn the probe from the point to be measured and move the probe to the next point to be measured. The procedure of aligning the probe, pressing the probe against the point to be measured, and then performing measurement was repeated.
[発明が解決しようとする課題]
この4探針法は、測定が簡便で高い精度の測定結果が得
られるという長所を有するが、反面前述の金属製針状プ
ローブは、先端部が鋭利であるので、被測定試料である
クエへの表面を損傷することが避は難いという問題があ
った。これらの理由から、従来の方法では、モニター用
の部分の測定以外では製造工程での評価には使えないと
いう問題があった。[Problems to be Solved by the Invention] This four-probe method has the advantage of being easy to measure and can provide highly accurate measurement results, but on the other hand, the metal needle probe described above has a sharp tip. Therefore, there was a problem in that it was inevitable that the surface of the square, which was the sample to be measured, would be damaged. For these reasons, the conventional method has a problem in that it cannot be used for evaluation in the manufacturing process except for measuring parts for monitoring.
本発明の目的は前記問題点を解消し、被測定試料の表面
を損傷することなく、非破壊での抵抗の測定が可能な抵
抗測定装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a resistance measuring device capable of non-destructively measuring resistance without damaging the surface of a sample to be measured.
[課題を解決するための手段]
上記目的を達成するために、本発明の抵抗測定装置は、
一面が、平板状の被測定試料に当接され、粒子径が1〜
200μ調の導電粒子を5〜20体積%で含み、厚みが
0.1〜2IIIIlでその厚み方向に圧力が加えられ
た部分が導電性状態となる感圧導電性シートと、前記感
圧導電性シートの他面と対向し、所定の間隙を有して設
けられた絶縁性の電極保持板と、この電極保持板に保持
され、電極保持板の表面から前記間隔内に突出する4つ
以上の電極と、前記電極保持板を前記感圧導電性シート
と共に前記被測定試料に圧接させ、圧接力を付与する圧
接力付与手段と、前記4つ以上の電極のうちの4つを用
いて抵抗を測定する測定手段とを備えたことを特徴とす
る。[Means for Solving the Problem] In order to achieve the above object, the resistance measuring device of the present invention has the following features:
One side is brought into contact with a flat plate-shaped sample to be measured, and the particle size is 1~
A pressure-sensitive conductive sheet containing 5 to 20% by volume of 200μ-tone conductive particles and having a thickness of 0.1 to 2IIII and whose portion becomes conductive when pressure is applied in the thickness direction, and the pressure-sensitive conductive sheet an insulating electrode holding plate facing the other side of the sheet and provided with a predetermined gap; and four or more electrode holding plates held by this electrode holding plate and protruding from the surface of the electrode holding plate within the above distance. An electrode, a pressure-contact force applying means for press-contacting the electrode holding plate together with the pressure-sensitive conductive sheet to the sample to be measured and applying a pressure-contact force, and a resistance using four of the four or more electrodes. The method is characterized by comprising a measuring means for measuring.
[作 用]
本発明によれば、被測定試料の上に感圧導電性シート板
が載置さね、電極保持板に保持された4つ以上の電極が
感圧導電性シートと共に前記被測定試料に圧接される。[Function] According to the present invention, a pressure-sensitive conductive sheet plate is placed on the sample to be measured, and four or more electrodes held on the electrode holding plate are placed on the sample to be measured together with the pressure-sensitive conductive sheet. Pressed against the sample.
すると、感圧導電性シートはその圧力が加えられた部分
、すなわち4つ以上の電極の圧接部分が導電状態となる
。そこで、その電極の中の2つの電極から被測定試料に
電流を流し、他の2つの電極間に生ずる電位差を検出す
ることにより、抵抗が測定される。Then, the portion of the pressure-sensitive conductive sheet to which pressure is applied, that is, the portion where four or more electrodes are in pressure contact, becomes conductive. Therefore, the resistance is measured by passing a current through the sample to be measured from two of the electrodes and detecting the potential difference generated between the other two electrodes.
したがって、被測定試料の表面には何等の損傷を与える
ことなく、すなわち非破壊状態での測定が可能である。Therefore, measurement can be performed without causing any damage to the surface of the sample to be measured, that is, in a non-destructive state.
[実施例] 以下、図面に基いて本発明の詳細な説明する。[Example] Hereinafter, the present invention will be explained in detail based on the drawings.
第1図は本発明にかかる平板状の被測定試料の4探針法
を利用する抵抗測定装置の一実施例を示す断面図であり
、1は、例えば、イオン注入層を有するウェハAが載置
されるステージで、樹脂等の絶縁性材料で形成されてい
る。ステージ1は不図示のメインフレームに固定されて
いる。2は、例えばエポキシ樹脂、ポリエステル、ポリ
イミド等の樹脂、あるいはそれらとガラス繊維や無機充
填剤との複合材、またはガラスやセラミックよりなる絶
縁性の探針電極保持板であり、測定用電極として4つの
電極21.22.23および24が設けられている、測
定用電極はリベット状導電体、あるいはメツキ、エツチ
ング蒸着、印刷等の手段により電極保持板2に形成する
こともできる。電極保持板2の下方には、その厚さ方向
に圧力が加えられたとき、その部分が厚さ方向に導電性
状態となる感圧導電性シート3が所定の間MS (例え
ば50μ■)離間した状態で保持されている。そして、
前述した4つの電極21.22.23および24の先端
部は間!+I S内に突出し感圧導電性シート3と当接
されている。そして、電極保持板2の上側は4つの電極
21.22.23および24への配線を含み、エポキシ
樹脂等の絶縁レジスト25でもって被覆されている。FIG. 1 is a cross-sectional view showing an embodiment of a resistance measuring device using a four-probe method for measuring a flat plate-shaped sample according to the present invention. This stage is made of an insulating material such as resin. Stage 1 is fixed to a main frame (not shown). 2 is an insulating probe electrode holding plate made of resin such as epoxy resin, polyester, polyimide, or a composite material of these with glass fiber or inorganic filler, or glass or ceramic; The measuring electrodes, which are provided with two electrodes 21, 22, 23 and 24, can also be formed on the electrode holding plate 2 by means of rivet-like conductors or by plating, etching, vapor deposition, printing or the like. Below the electrode holding plate 2, there is a pressure sensitive conductive sheet 3 which becomes conductive in the thickness direction when pressure is applied in the thickness direction. It is kept in the same state. and,
The tips of the four electrodes 21, 22, 23 and 24 mentioned above are between! +IS protrudes into the inside and is in contact with the pressure-sensitive conductive sheet 3. The upper side of the electrode holding plate 2 includes wiring to four electrodes 21, 22, 23 and 24, and is covered with an insulating resist 25 such as epoxy resin.
さらに、電極保持板2は、絶縁レジスト25を介在させ
て、加圧を均一に行うための発泡ポリウレタンまたは発
泡ゴムからなる弾性板4と連接され、弾性板4は加圧板
5と連接されている。加圧板5は不図示のメインフレー
ムに上下動可能に支持されたロッド51に保持され、ロ
ッド51は不図示のエアシリンダのピストンと連結され
ている。Further, the electrode holding plate 2 is connected to an elastic plate 4 made of foamed polyurethane or foamed rubber for uniformly applying pressure, with an insulating resist 25 interposed therebetween, and the elastic plate 4 is connected to a pressure plate 5. . The pressure plate 5 is held by a rod 51 that is vertically movably supported by a main frame (not shown), and the rod 51 is connected to a piston of an air cylinder (not shown).
6は電源であり、本実施例では前述の4つの電極の中、
両端の電極21%24に抵抗器61および電流計62を
介在させて、配線63でもって接続されている。7は電
圧計であり、電極22.23 と配線71でもって接続
されている。6 is a power supply, and in this embodiment, among the four electrodes mentioned above,
The electrodes 21% 24 at both ends are connected by a wiring 63 with a resistor 61 and an ammeter 62 interposed therebetween. Reference numeral 7 denotes a voltmeter, which is connected to the electrodes 22 and 23 by wiring 71.
本発明に用いる感圧導電性シート3の素材は、例えば絶
縁性弾性体中に導電粒子を混合してなるエラストマーで
あり、導電粒子が主として圧接方向に配列して導電路を
形成したものを用いることができる。絶縁性弾性体とし
ては、シリコンゴム、ウレタンゴム、ネオブレンゴム、
アクリルゴム、ポリブタジェンゴム、ブチルゴム、ポリ
イソプレンゴム、フッ素ゴム、ホスファーゼンゴム等を
挙げることができ、導電粒子としては、カーポル
ンおよび金、銀、銅、ニッケル、錫、アlミニウム等の
金属粒子、およびそれらに貴金属メツキを施したもの、
およびポリスチレン等のポリマー粒子やジルコニア、ア
ルミナ、シリカ、チタニア等の無機粒子に貴金属メツキ
を施したもの等を挙げることができる。さらに導電粒子
は、その粒子径が1〜200μ−の範囲であることが必
要である。The material of the pressure-sensitive conductive sheet 3 used in the present invention is, for example, an elastomer made by mixing conductive particles into an insulating elastic body, and the conductive particles are mainly arranged in the pressure contact direction to form a conductive path. be able to. Insulating elastic materials include silicone rubber, urethane rubber, neoprene rubber,
Examples of the conductive particles include acrylic rubber, polybutadiene rubber, butyl rubber, polyisoprene rubber, fluororubber, and phosphazene rubber. Metal particles and those plated with precious metals,
Examples include polymer particles such as polystyrene and inorganic particles such as zirconia, alumina, silica, and titania plated with noble metals. Further, it is necessary that the conductive particles have a particle diameter in the range of 1 to 200 μ-.
粒子径が1μ園未満になると、測定を行うに十分な接触
状態が得られ難くなる。また、200μ■を越えると、
被測定試料を損傷するおそれが生じる。When the particle size is less than 1 μm, it becomes difficult to obtain a sufficient contact state for measurement. Also, if it exceeds 200 μ■,
There is a risk of damaging the sample to be measured.
また、感圧導電性シート3は、厚さが0.1〜21m
、さらに導電粒子の混合量が5〜20体積%であること
が圧接時における導電路の形成上必要であり、その硬度
が20〜55(JIS−AHs)であることが好ましい
、このような感圧導電性シートとしては、例えば日本合
成ゴム■製JSRPCR305−02を用いることがで
きる。Moreover, the pressure-sensitive conductive sheet 3 has a thickness of 0.1 to 21 m.
Furthermore, it is necessary for the mixed amount of conductive particles to be 5 to 20% by volume in order to form a conductive path during pressure bonding, and the hardness is preferably 20 to 55 (JIS-AHs). As the piezoconductive sheet, for example, JSR PCR 305-02 manufactured by Nippon Synthetic Rubber Co., Ltd. can be used.
かかるウェハへの抵抗率、またはシート抵抗を上述した
抵抗測定装置で測定するに際しては、まず、ステージ1
の上にウェハAを載置する。そして、不図示のエアシリ
ンダなどにより電極保持板2を含む加圧板5を下降し、
感圧導電性シート3とウェハAの表面とを当接させ加圧
し、例えば電極保持板2と感圧導電性シート3との間隙
Sが消失するまで加圧し、これにより感圧導電性シート
3とウェハAとを介して、それぞれの電極間を電気的に
接続する。このとき感圧導電性シートに加わる圧接力が
、通常、5〜1000g/am’ 、好ましくは10〜
500g/ss”となるようにエアシリンダ等による。When measuring the resistivity or sheet resistance of such a wafer using the above-mentioned resistance measuring device, first stage 1
Place wafer A on top. Then, the pressure plate 5 including the electrode holding plate 2 is lowered using an air cylinder (not shown) or the like.
The pressure-sensitive conductive sheet 3 and the surface of the wafer A are brought into contact with each other and pressurized, for example, until the gap S between the electrode holding plate 2 and the pressure-sensitive conductive sheet 3 disappears, whereby the pressure-sensitive conductive sheet 3 The respective electrodes are electrically connected via the wafer A and the wafer A. At this time, the pressing force applied to the pressure-sensitive conductive sheet is usually 5 to 1000 g/am', preferably 10 to
500g/ss" using an air cylinder, etc.
加圧力を調整する。圧接力が5g/mm”未満であると
測定を行うに必要な充分な導通状態が得られず、too
og/■■2を越えると被測定試料であるウェハAに損
傷を与えることとなる。Adjust the pressure. If the contact force is less than 5 g/mm, sufficient conductivity necessary for measurement cannot be obtained, and too much
If it exceeds og/■■2, the wafer A, which is the sample to be measured, will be damaged.
かくて、上記圧接力を付与した状態で電流計62でもっ
て電流を計測しつつ、電圧計7でもって電極22および
23間に生ずる電位差を検出する。Thus, while the current is measured with the ammeter 62 while the pressure contact force is applied, the potential difference generated between the electrodes 22 and 23 is detected with the voltmeter 7.
なお、本発明における抵抗測定装置において、電極が4
つを超えて設置される場合には、スキャナー等により、
電極群中から所定の電極4つを選択し、これらの任意の
2つの電極間に電流を流し、少なくとも他の2つの電極
間の電圧を測定し、その後、電極を切換えて順次測定す
る手段を備えることができる。In addition, in the resistance measuring device according to the present invention, the electrodes are 4
If more than one is installed, a scanner etc. will be used to check the
means for selecting four predetermined electrodes from a group of electrodes, passing a current between any two of these electrodes, measuring the voltage between at least two other electrodes, and then sequentially measuring the voltage by switching the electrodes; You can prepare.
これによって、被測定試料からの感圧導電性シート、電
極等の離間、移動および加圧を繰返して行うことなくス
キャナ等によって電流を流す電極および電圧を測定する
電極の切換えを行うので、高速の測定を行うことができ
る。This enables high-speed switching between electrodes for current flow and electrodes for measuring voltage using a scanner, etc., without having to repeatedly separate, move, and pressurize the pressure-sensitive conductive sheet, electrode, etc. from the sample to be measured. Measurements can be taken.
さらに、本発明における抵抗測定装置は、広がり抵抗(
Spreding Re5fstance )法に応用
することができる。これは、本発明の抵抗測定装置の電
極1つを用い、該電極と被測定試料の裏側に配置する別
の電極との間に印加する電圧と電流値および電極の直径
の値を用いて抵抗を測定する方法である。この方法は、
電極の直径で分解能が決まるが非常に狭い面積の抵抗を
測定することが可能である。Furthermore, the resistance measuring device according to the present invention has a spreading resistance (
This method can be applied to the Spreading Re5fstance method. This is done by using one electrode of the resistance measuring device of the present invention, and using the voltage and current values applied between the electrode and another electrode placed on the back side of the sample to be measured, as well as the value of the diameter of the electrode. This is a method of measuring This method is
The resolution is determined by the diameter of the electrode, but it is possible to measure resistance in a very narrow area.
(実験例1)
第1図に示す如き測定装置を用いて、被測定試料として
第2図に示す如き、縦×横(axb)−4hvX 40
i+mのガラス板上に形成された4000人厚さのSn
owからなる液晶用透明電極の抵抗測定を、第3図に示
すように■ないし■の15点について行なフた。電極保
持板2には感圧導電性シート3と当接する先端の直径が
0.81の電極を設け、弾性板4としては市販の厚さ1
0mmの発泡ゴム板を用いた。(Experiment Example 1) Using a measuring device as shown in Fig. 1, as a sample to be measured, as shown in Fig. 2, length x width (axb) - 4 hv x 40
4000mm thick Sn formed on i+m glass plate
The resistance of the transparent electrode for liquid crystal made of ow was measured at 15 points (■ to ■) as shown in FIG. The electrode holding plate 2 is provided with an electrode having a diameter of 0.81 at the tip that contacts the pressure-sensitive conductive sheet 3, and the elastic plate 4 is made of a commercially available thickness of 1.
A 0 mm foamed rubber plate was used.
このようにして得られた結果を第1表に示す。The results thus obtained are shown in Table 1.
この第1表から明らかなように、測定した15点の平均
シート抵抗値は9.0(Ω/口)であり、最下段の3点
■、[相]および[相]のシート抵抗が大きくなってい
ることが判明した。従来の4探針法測定では10.0
(Ω/口)が、被測定試料の端部分の測定で得られて
おり、はぼ近い値を得ている。しかも、この実験例では
被測定試料の表面に、何らの損傷も認められなかった。As is clear from Table 1, the average sheet resistance value of the 15 points measured was 9.0 (Ω/mouth), and the sheet resistance of the bottom three points ■, [phase], and [phase] was large. It turned out that it was. 10.0 in conventional 4-probe method measurement
(Ω/mouth) was obtained by measuring the end portion of the sample to be measured, and the value is very close to that of the measured sample. Moreover, in this experimental example, no damage was observed on the surface of the sample to be measured.
(以下余白)
里−一上一一人
(実験例2)
次に、第1図に示す測定装置を用い実験例1と同じ条件
の下に、被測定試料として第4図に示すよ°うな6 x
b = 270mm X 4B+++mのサーマルヘ
ッドに設けられた金属薄膜(TaJ)の抵抗測定を、第
5図に示すように、横方向AないしHの8点、縦方向1
ないし303点、合計24点について行なった。(Leaving space below) Kazuo Sato (Experiment Example 2) Next, using the measuring device shown in Figure 1 and under the same conditions as Experiment Example 1, the sample shown in Figure 4 was measured. 6 x
The resistance of the metal thin film (TaJ) provided on the thermal head of b = 270mm x 4B+++m was measured at 8 points in the horizontal direction A to H and 1 in the vertical direction, as shown in Figure 5.
303 points, a total of 24 points.
このようにして得られたシート抵抗の(Ω/口)測定結
果を第2表に示す、/
この第2表から明らかなように、いずれも、従来の4探
針法測定の場合と同様の値のシート抵抗が得られている
。しかも、この実験例でも被測定試料の表面に、何らの
損傷も認められなかった。The sheet resistance (Ω/unit) measurement results obtained in this way are shown in Table 2. / As is clear from Table 2, the results are similar to those of the conventional four-probe method measurement. The sheet resistance of the value is obtained. Furthermore, in this experimental example, no damage was observed on the surface of the sample to be measured.
(以下余白)
第
2
表
(実験例3)
さらに、第1図に示す測定装置を用い実験例1と同じ条
件の下に、被測定試料としてシリコンウェハのシート抵
抗 (Ω/口)の測定を行なった。(Leaving space below) Table 2 (Experimental Example 3) Furthermore, using the measuring device shown in Figure 1 and under the same conditions as Experimental Example 1, the sheet resistance (Ω/hole) of a silicon wafer as a sample to be measured was measured. I did it.
測定装置の電極の先端部直径は0.8 ■である。なお
、比較例として金属製針状プローブを用いる従来の4探
針法による測定も行なった。この結果を第3表に示す。The diameter of the tip of the electrode of the measuring device is 0.8 mm. As a comparative example, a conventional four-probe method using a metal needle probe was also conducted. The results are shown in Table 3.
第3表から明らかなように、シリコンウェハの場合であ
っても、従来の4探針法測定の値とほぼ近い値が得られ
ることが理解できる。なお、この場合においてもシリコ
ンウェハの表面には何らの損傷が生じないことが確認さ
れた。As is clear from Table 3, it can be seen that even in the case of silicon wafers, values almost close to those obtained by conventional four-probe measurement can be obtained. In this case, it was confirmed that no damage occurred to the surface of the silicon wafer.
(実験例4)
さらに、第1図に示す測定装置を用い実験例1ト同シ条
件の下に、被測定試料としてシリコンウェハにボロンを
、表中に示す各条件でインプラ・アニールした試料での
活性層の抵抗率を測定した。測定装置の探針の先端部直
径は0.8 mmである。なお、比較例として金属製針
状プローブを用いる従来の4探針測定も行なった。この
結果を第4表に示す、なお、表中の温度はアニール温度
C℃)である。(Experimental Example 4) Furthermore, using the measuring device shown in Figure 1 and under the same conditions as in Experimental Example 1, boron was implanted and annealed on a silicon wafer as a sample to be measured under each condition shown in the table. The resistivity of the active layer was measured. The diameter of the tip of the probe of the measuring device is 0.8 mm. As a comparative example, conventional four-probe measurement using a metal needle probe was also conducted. The results are shown in Table 4, where the temperature in the table is the annealing temperature (C°C).
(以下余白)
五−二り一衆
抵抗率
(0cm)
第4表から明らかなように、本例においても従来の4探
針測定の値とほぼ近い値が得られた。(The following is a blank space) 5-2 Collective resistivity (0 cm) As is clear from Table 4, values almost close to those of the conventional four-probe measurement were obtained in this example as well.
なお、イオン注入層を有するシリコンウェハのシート抵
抗測定にあっては、従来の金属製針状プローブを用いた
4探針法ではドーズ(DO3り量10” (cm−”)
以上が、被測定層の破壊などが生ずることから限界であ
るが、本発明にかかる装置を用いた測定ではドーズ量1
0” (cab−’)の測定も可能であることが確認さ
れた。In addition, when measuring the sheet resistance of a silicon wafer having an ion-implanted layer, the dose (DO3 amount 10"(cm-")
The above is the limit because destruction of the layer to be measured occurs, but in measurement using the device according to the present invention, the dose amount 1
It was confirmed that measurement of 0''(cab-') is also possible.
(発明の効果)
以上の説明から明らかなように、本発明の抵抗測定装置
によれば前述した所定の感圧導電性シートを用いてウェ
ハ、透明電極、サーマルヘッド等の平板状被測定試料の
抵抗を測定するようにしたので、被測定試料に損傷を与
えることがなく非破壊状態で測定することが可能となり
、各種デバイスの開発を容易にするとともに生産性を向
上させることができる。(Effects of the Invention) As is clear from the above explanation, the resistance measuring device of the present invention uses the above-described predetermined pressure-sensitive conductive sheet to measure flat samples such as wafers, transparent electrodes, and thermal heads. Since the resistance is measured, it is possible to perform the measurement in a non-destructive state without damaging the sample to be measured, which facilitates the development of various devices and improves productivity.
また、本発明にかかる抵抗測定装置は、構造が簡単でコ
スト的に有利である。Furthermore, the resistance measuring device according to the present invention has a simple structure and is advantageous in terms of cost.
第1図は本発明にかかる抵抗測定装置の一実施例を示す
断面図、
第2図は被測定試料としての透明電極の一形状例を示す
斜視図、
第3図はその被測定点の一例を示す平面図、第4図は同
じく、被測定試料としてのサーマルヘッドの一形状例を
示す斜視図、
第5図はその被測定点の一例を示す平面図である。
1・・・ステージ、
2・・・電極保持板、
3・・・感圧導電性シート、
4・・・弾性板、
5・・・加圧板、
21.22,23.24
・・・電極。
榛憔弓ξ力“力否者6.七℃9町舅ミ*1===−プ(
カヒイ戸1右示ず断づhトA第1図
遁ヨ8電層−−杉大例宅示す斜増すA
第2図
才1Kmllダにj聾、−−イ列嗜北べ\ず壬面B第3
図Fig. 1 is a sectional view showing an embodiment of the resistance measuring device according to the present invention, Fig. 2 is a perspective view showing an example of the shape of a transparent electrode as a sample to be measured, and Fig. 3 is an example of the point to be measured. Similarly, FIG. 4 is a perspective view showing an example of the shape of a thermal head as a sample to be measured, and FIG. 5 is a plan view showing an example of a point to be measured. DESCRIPTION OF SYMBOLS 1... Stage, 2... Electrode holding plate, 3... Pressure-sensitive conductive sheet, 4... Elastic plate, 5... Pressure plate, 21.22, 23.24... Electrode. Powerless bow ξ power “powerless person 6.7℃9 town father-in-law*1===-pu(
Kahii door 1 right, not shown, h A, 1st figure, 8th electric layer -- cedar house, increasing slope, A, 2nd figure, 1 km long, deaf, -- 1 row north, 1,000 yen. B 3rd
figure
Claims (1)
1〜200μmの導電粒子を5〜20体積%で含み、厚
みが0.1〜2mmでその厚み方向に圧力が加えられた
部分が導電性状態となる感圧導電性シートと、 前記感圧導電性シートの他面と対向し、所定の間隙を有
して設けられた絶縁性の電極保持板と、 この電極保持板に保持され、電極保持板の表面から前記
間隔内に突出する4つ以上の電極と、前記電極保持板を
前記感圧導電性シートと共に前記被測定試料に圧接させ
、圧接力を付与する圧接力付与手段と、 前記4つ以上の電極のうちの4つを用いて抵抗を測定す
る測定手段と、 を備えたことを特徴とする抵抗測定装置。[Scope of Claims] 1) One surface is in contact with a flat plate-shaped sample to be measured, contains 5 to 20% by volume of conductive particles with a particle diameter of 1 to 200 μm, and has a thickness of 0.1 to 2 mm. a pressure-sensitive conductive sheet whose portion becomes conductive when pressure is applied in a direction; and an insulating electrode holding plate facing the other surface of the pressure-sensitive conductive sheet with a predetermined gap therebetween. and four or more electrodes held by this electrode holding plate and protruding from the surface of the electrode holding plate within the interval, and pressing the electrode holding plate together with the pressure-sensitive conductive sheet against the sample to be measured. A resistance measuring device comprising: a pressing force applying means for applying force; and a measuring means for measuring resistance using four of the four or more electrodes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24495089A JP2751460B2 (en) | 1989-09-22 | 1989-09-22 | Resistance measuring device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24495089A JP2751460B2 (en) | 1989-09-22 | 1989-09-22 | Resistance measuring device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03107772A true JPH03107772A (en) | 1991-05-08 |
JP2751460B2 JP2751460B2 (en) | 1998-05-18 |
Family
ID=17126372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24495089A Expired - Lifetime JP2751460B2 (en) | 1989-09-22 | 1989-09-22 | Resistance measuring device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2751460B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0666509A2 (en) * | 1994-02-04 | 1995-08-09 | Sharp Kabushiki Kaisha | Recording material recognizing device |
CN101846706A (en) * | 2010-05-18 | 2010-09-29 | 宁波大学 | Method for dynamically measuring high resistance of polymer sheets |
CN106526325A (en) * | 2016-11-21 | 2017-03-22 | 北京航天新风机械设备有限责任公司 | Crimping resistance nondestructive measurement tool |
-
1989
- 1989-09-22 JP JP24495089A patent/JP2751460B2/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0666509A2 (en) * | 1994-02-04 | 1995-08-09 | Sharp Kabushiki Kaisha | Recording material recognizing device |
EP0666509A3 (en) * | 1994-02-04 | 1996-03-27 | Sharp Kk | Recording material recognizing device. |
US5572309A (en) * | 1994-02-04 | 1996-11-05 | Sharp Kabushiki Kaisha | Image forming apparatus with impedance detection |
CN101846706A (en) * | 2010-05-18 | 2010-09-29 | 宁波大学 | Method for dynamically measuring high resistance of polymer sheets |
CN106526325A (en) * | 2016-11-21 | 2017-03-22 | 北京航天新风机械设备有限责任公司 | Crimping resistance nondestructive measurement tool |
CN106526325B (en) * | 2016-11-21 | 2023-10-03 | 北京新风航天装备有限公司 | Nondestructive measurement tool for crimping resistance |
Also Published As
Publication number | Publication date |
---|---|
JP2751460B2 (en) | 1998-05-18 |
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