TW555832B - White-emitting lighting-unit on LED-basis - Google Patents

White-emitting lighting-unit on LED-basis Download PDF

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Publication number
TW555832B
TW555832B TW090112781A TW90112781A TW555832B TW 555832 B TW555832 B TW 555832B TW 090112781 A TW090112781 A TW 090112781A TW 90112781 A TW90112781 A TW 90112781A TW 555832 B TW555832 B TW 555832B
Authority
TW
Taiwan
Prior art keywords
light
emitting
lighting unit
patent application
led
Prior art date
Application number
TW090112781A
Other languages
English (en)
Inventor
Andries Dr Ellens
Frank Dr Jermann
Franz Dr Kummer
Franz Dr Zwaschka
Original Assignee
Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10026435A external-priority patent/DE10026435A1/de
Priority claimed from DE20108013U external-priority patent/DE20108013U1/de
Application filed by Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh, Osram Opto Semiconductors Gmbh filed Critical Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh
Application granted granted Critical
Publication of TW555832B publication Critical patent/TW555832B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Description

555832 五、發明説明（1 ) 技術領域 本發明係關於以LED爲基礎發白光之照明單元，其中 LED主要發射UV射線或藍光。此外，利用至少發黃色和 綠色光之發光物質，使主要射線部份變換。黃色發光物質 使用Ce活化石榴石，尤指含γ和/或Tb者。綠色發光物 質採用Eu活化之氯矽酸鈣鎂（Ca8Mg(Si04)4Cl2)。 技術現狀 由<<電化學會誌>> 1 992年第622頁已知氯矽酸鹽發光 物質，及其應用於UV和藍光激發，添加有Ειι(<摻Eu2 +的 Ca8Mg(Si04)4Cl2磷之發光性質和能量轉移>)。此物發綠光 。惟未記載此發光物質之具體應用範疇。 賦予白色光的發光變換LED當時是由約在460nm發藍 光的Ga(In)N-LED和發黃光的YAG:Ce3 +發光物質組合產 生（US 5 998 92 5和EP 8 62 794)。當然，此一般照明目的 之白光LED，由於缺乏色成份（特別是紅色成份），致使顏 色再現性不良，故用途有限。變通方式是三色RGB(紅、 綠、藍）混合，一同產生白色，例如參見W0 98/39805。 發明槪述 本發明之目的，在於準備申請專利範圍第1項前序句以 LED爲基礎的發光單元，發射白光，尤其是具有高度顏色 再現性者。 此目的是由申請專利範圍第1項特徵句解決。特別有利 的構成列於申請專利範圍附屬項。 迄今白色LED的解決方式，不是特別基於RGB構成， 555832 五、發明説明（2 ) 即紅、綠、藍三色的混合，使尋後成份透過發光物質，便 是經由LED的主要發射實現。第二種簡便的解決方式是 基於藍、黃混合（BG構成），如前所述。 本發明應用嶄新的槪念，以BGG混合物爲基礎，亦即 藍、黃、綠色的組合。基本上，黃色發光物質係寬帶到具 有在紅色光譜範圍內的足夠發射份量，尤指在2 620nm光 譜範圍內可視度至少爲其總發射20%之份量。 適用發黃光之發光物質特指稀土類（SE)Ce活化石榴石 ，SE以選自Y，Tb，Gd，Lu和/或La爲佳。以Y和Tb 的組合更好。就足夠紅色成份而言，透過Tb的長波移動 有特別正面的作用。 發綠色的發光物質（其高峰發射波長以500至525nm範 圍爲宜），以氯矽酸Ca-Mg基本架構最好，按照本發明添 加銪（Eu)。亦可有少量其他添加物，尤指補充少量錳（Μη) 供微調。又一變通例是採用SrAl204:En2 +或Sr4Al14025:EU2 + 類型爲綠色發光物質。 綠色發光物質之色區’與黃色發光物質之色區’及藍色 LED(即藍色發光物質），共同在色圖上組成廣三角，由此 提供適應特殊需要之額外可能性。不同石榴石的色區變化 寬度，因此明顯減小。是故可達成的色溫即分佈廣大範圍 ，典型上爲4000至1〇〇〇〇°Κ。 本發明特別有利於發展發白光的照明單元。於此涉及的 照明單位，不是基於LED場（陣列）或個別LED，便是直接 爲發光變換LED，其發光物質係直接或間接與晶片接觸’ -4- 555832 五、發明説明（3) 即直接載於晶片上，或埋入周圍樹脂內。 產生白光係藉將發射UV或藍光（於此共同稱爲「短波」） 的LED，發射波長（高峰）在300和470nm ;以及本發明發 光物質混合物，吸收全部或部份LED光線，本身在光譜 範圍內發射；二者加以組合而實現，其與白光LED的光 另外混合，可得更佳之色再現性。即可能必須另外引入發 藍光之發光物質成份（例如BAM)。特別有效的激發，是在 約330至3 50nm發射波長（高峰）的UV-LED，以及約45 0 至4 7 0 n m發射波長（局峰）的監色L E D。 因此，例如藉混合20至50重量％氯矽酸鹽發光物質， 可達成以石榴石發光物質爲基礎的已知白色LED之改進 色再現性。發黃光的發光物質爲稀土類（SE)Y，Gd，Lu， La和/或Tb之石榴石，其式爲SE3(Al，Ga)5012:Ce，尤指 SE = Y和/或Tb，特別是相當於式YAG:Ce或TbAG:Ce。 發光物質Ga8Mg(Si04)4Cl2:Eu2 +見於技術文獻，但無一 提到具體應用。此發光物質按照本發明顯示良好適合應用 於白色LED，尤其有益的是基於三色混合物，主要由UV 源激發（300至390nm)。但亦可適合特別應用在具有藍色 主要光源（43 0至470nm)的白色LED。銪的份量尤宜在 x = 0.005和1.6之間，而以χ = 〇·〇1和χ=1·0之間尤佳。於 此可列出通式 Ca8_xEuxMg(Si04)4Cl2。 除Eu外添加少量Μη(至約Eu的20%莫耳）爲另.添加 物，可使標的發射從綠色光譜範圍再往長波移動，亦即黃 發光譜範圍。其優點是發射光更適應人的眼睛，由此可以改 555832 五、發明説明（4) 善視覺效果。Μη的成份y頂多爲y = 0.1。沒有引進錳時， 銪成份以在x = 〇.05和0.8之間最好。 銪濃度會在光源（尤其是LED)充電時，影響發色光的色 區。透過二者濃度Ell: Μη的關係，可額外微調此發光物質 之色區，使LED內意外的其他（黃和藍色）發光物質之適應 性簡化且最適化。 本發明發光物質亦可例如應用於對透明圓板上的LED 陣列（主要發射UV或藍光）發光物質照明，或對帶有水晶 體的個別LED發光物質照明之裝置。 本發明發光物質特別有益的是應用來實現高度色再現性 的白色LED。爲此，發光物質可以分離或混合，並可與盡 量透明的黏合劑組合（EP 862 794)。發光物質全部或部份 吸收發射UV/藍光的LED之光，並在其他光譜範圍（尤指 黃色和綠色）再度發射。寬帶（即有明顯的綠色成份）到總體 發射產生所需色區。迄今罕有發光物質可一如上述發光物 質組合式之充分符合此需要。顯示高度量子效率（70%左右） ，同時其光譜發射基於眼睛的感受性，有明亮的感覺。色 區位在廣闊範圍。 適用作光源以產生白色的LED(光射二極體），不是經由 發射綠色或黃色光的發光物質，與在藍色光譜範圍（430至 470nm)的主要光線直接混合，便是將主要發射UV的光線 藉更多的發光物質變換爲白色（完全BGG混合，經由三個 發光物質）。須知…般認定的藍、黃、綠，在此最大發射 範圍爲，藍色430-470nm，綠色490-520nm，黃色545- 555832 五、發明説明（5 ) 5 90nm 〇 主要光源使用發射UV或藍光晶片的光線。uV-LED可 達成特佳結果，其最大發射在3 3 0至3 7 0nm。特別顧及石 榴石和氯矽酸鹽的激發光譜，顯示在3 5 5至365nm最適宜 。藍色發光物質在此可用例如BAM。以藍色晶片在430 至470nm高峰波長可達成特佳結果。特別顧及石榴石和氯 石夕酸鹽之激發光譜，顯示在445至460nm最適宜。 具有特佳色再現性的變化例，是共同應用二發光物質， 一 Tb高含量發光物質，宜爲純TbAG:Ce，連同氯矽酸鹽 :Eu，具有特佳溫度安定性之變化例，是共同應用二發光 物質，一 Y高含量發光物質，宜爲純YAG:Ce，連同氯矽 酸鹽：E u。 可發射主要光線UV或藍色光線（以下合稱短波光線）的 LED，特別適用Ga(In)-N-LED，也是發射範圍在300至 470nm的另一發射短波之LED。特別推荐主要發射範圔在 UV爲320至36 0nm，而藍色範圍爲430至470nm，則效 率最筒。 圖式簡單說明 茲參見所附諸具體例詳述本發明如下。附圖中： 第1圖爲添加銪的氯矽酸鹽之激發和發射光譜； 第2圖爲添加銪的又一氯矽酸鹽之反射和發射光譜； 第3圖爲半導體元件，用作白光用之光源（LED); 第4圖爲第3圖具有本發明發光物質TbAG和CS:Eu的 LED之發射光譜； 555832 五、發明説明（7) 認知。在較大波長時，激發性減退因Eu2 +吸收帶而定。在 460nm測得量子效率還可與400nm或甚至更短波（直至約 3 4 0 n m)嫂美。 發射光譜顯示Eu2 +發射帶最大在約507nm。此項發射在 眼中呈綠色。需要時，經由共同添加少量錳，可使發光物 質的發射狀況更適合眼睛的感受性。 第2圖表示添加Eu的氯矽酸鹽Ca8Mg(Si04)4Cl2:Eu2 + (簡稱CS:Eu)又一具體例。加Eu203計0.2莫耳，即x = 0.4 。高峰波長在509nm，中間波長在522nm色座標x = 0.185 ，y = 0.615。在400nm照射下的發射，於第2a圖內可賦予 任意單元。第2b圖內又賦予反應（以百分比計）。 具有GalnN晶片的白色LED充電時，可例如應用類似 US 5 998 925號所述構造。此種白光用光源之構造，可由 第3圖加以說明，光源爲InGaN型半導體元件（晶片1)， 高峰發射波長45Onm，有第一和第二電線2、3，理人凹部 9範圍之不透光罩殼8內。電線之一 3經由連接金屬線1 4 ’與晶片1聯結。凹部9充滿澆注物質5，主要組份爲環 氧樹脂（80至90重量％)，含有發光物質顏料6(低於15重 量％)不計更少量的成份，用醚和氣溶劑。 第二具體例的氯矽酸鹽發光物質（CS:Ei〇，共同應用發 光物質顏料用之TbAG:Ce。對TbAG的混合比例（CS:Eu) 爲4 :6(重量份）。此具體例特徵爲特別高度色再現性Ra = 85 。此具體例之發射光譜如第4圖所示。 習用溶液（BG)與本發明溶液（BGG)間直接比較，顯小如 -9- 555832 五、發明説明（8) 下結果：BG溶液選用發藍光lnGaN晶片（高峰在450nm) 連同習用YAG:Ce。本發明BGG溶液選用同樣LED加上 TbAG:Ce 和 CS:Eu。於是，在 χ = 〇.322 和 y = 0.366 的色區 達成色溫度6000K。於單純BG溶液。色再現性可惜只達 Ra = 72，而BGG溶液測成功色再現性達Ra = 80。紅色再現 性大爲改善，即由Ra = -22到Ra=10。BGG溶液的發射光 譜如第5圖所不。 白色LED之又一較佳具體例，除InGaN晶片外（藍光發 射在45 Onm)，應用上述氯矽酸鹽發光物質（CS: Ειι)與 YAG:Ce之組合。此具體例之特徵爲二種發光物質有極爲 相同的溫度消散比例，詳見第6圖。二發光物質的溫度消 散比例在可容許的充電範圍（約10CTC )實際上相同，對溫 度依賴性少。另一石榴石，例如與試驗混合石榴石 (Y〇33GdG63Ce()()4)Al5012比較用，呈現明顯低劣的溫度常 數（在第6圖內，此混合石榴石標示（丫,0〇1)八0:(^)。在選 用含高量Y(或Tb)作爲SE(SE晶格位置之至少60莫耳％) 的具體例，於不同溫度條件下，色區有特別穩定性，且有 其他光學資料。此具體例之發射光譜如第7圖所示。相當 於色溫度8 000K，色區座標x = 0.2 94而y = 0.3 09。色再現 性爲Ra = 77。二種發光物質之混合比例爲4.6:1。 第8圖表示作爲照明單元的平面發光體20。包含共同 支架2 1，上面黏著四方形的外殼22。其上面設有共同頂 蓋23。四方形外殻留有空缺，分別放置半導體構件24， 即發射UV之光二極體，其高峰發射360nm。白光之變換 -10 - 555832 五、發明説明（9 ) 電經由變換層25，尤指可容UV光線穿透的平面。計有外 殼側壁的內面、頂蓋和底部。變換層25由三種發光物質 構成，即利用本發明發光物質發射黃色、綠色、藍色光譜 範圍者。 符號之說明 1 晶片 2 電線 3 電線 5 澆注物質 6 發光物質顏料 8 不透光罩殼 9 凹部 14 連接金屬線 20 平面發光體 21 支架 22 外殼 23 頂蓋 24 半導體構件 25 變換層 -11-

Claims (1)

  1. 555832
    Λ /!一 今，、二Γ / i - a 六、申請專利範圍 第901 1 2781號「以LED爲主之可發出白色光之照明單元 」專利案 (92年4月修正） 六、申請專利範圍’· 1. 一種發出白色光之照明單元，有至少一 LED作爲光 源，其中LED發射在300至47 0nm的主要光線，此 光線經由排除LED主要光線的發光物質，部份或全 部變換成長波光線，其特徵爲，變換至少借助發綠 ’色光之一發光物質，源自Eu活化之氯矽酸鹽鎂類， 以及至少一發黃色光之發光物質，源自Ce活化之稀 土石榴石類進行者。 2. 如申請專利範圍第1項之發出白色光之照明單元， 其中發綠色光之發光物質按照通式 Ca8.x. yEuxMnyMg(Si04)4Cl2，其中 X 在 χ = 0·005 和 χ=1·6 之間，而y在y = 0和y = 0.1之間（均包含極端値在內） 者。 3. 如申請專利範圍第1項之發出白色光之照明單元， 其中發黃色光之發光物質是稀土類（SE)Y，Gd，Lu， La及/或Tb之石溜石，係按式SE3(Al，Ga)5012:Ce ，特別是具有SE = Y和/或Tb 。 4. 如申請專利範圍第3項之發出白色光之照明單元， 其中使用SE=Y或Tb於式SE3( A1，Ga)5012 :Ce中，即， 其對應於式YAG:Ce或TbAG:Ce。 5·如申請專利範圍第1項之發出白色光之照明單元， 555832 六、申請專利範圍 其中主要發射光線位於波長範圍3 3 0至370nm，而 主要發射光線係由發射最大範圍藍色（430 - 470nm )， 綠色（ 490 - 5 25nm)和黃色（545 - 590nm)之三個發光物 質排除者。 6. 如申請專利範圍第1項之發出白色光之照明單元， 其中主要發射光線位於430至370nm之藍色波長範 圍，而主要發射藍色光由相當於前述申請專利範圍 之一發射最大在黃色（ 545 - 590nm)和綠色（ 490 - 525nm) 之二個發光物質排除者。 7. 如申請專利範圍第1項之發出白色光之照明單元， 其中主要光線源應用發射短波之光二極體，尤指基 於 G a ( I n ) N 者。 8. 如申請專利範圍第1項之發出白色光之照明單元， 其中不加Μη時，應用銪份量在χ = 0.1和χ=1.0之間 者。 9. 如申請專利範圍第1項之發出白色光之照明單元， 其中照明單元係發光變換LED，於此之發光物質係 直接或間接與晶片接觸者。 10. 如申請專利範圍第1項之發出白色光之照明單元， 其中照明單元係LED組成之場（陣列）者。 .11·如申請專利範圍第1 0項之發出白色光之照明單元 ，其中至少一發光物質係安置在安置於LED場前面 之光學裝置上者。
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EP1206802B1 (de) 2008-03-19
WO2001093342A1 (de) 2001-12-06
CN1381072A (zh) 2002-11-20
US6504179B1 (en) 2003-01-07
KR20020025960A (ko) 2002-04-04
US20030006469A1 (en) 2003-01-09
CA2380444A1 (en) 2001-12-06
CN1203557C (zh) 2005-05-25
JP2003535478A (ja) 2003-11-25
JP4695819B2 (ja) 2011-06-08
DE50113755D1 (de) 2008-04-30
KR100784573B1 (ko) 2007-12-10
EP1206802A1 (de) 2002-05-22

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