TW534998B - Contact structure formed by photolithography process and method for producing the same - Google Patents
Contact structure formed by photolithography process and method for producing the same Download PDFInfo
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- TW534998B TW534998B TW089101415A TW89101415A TW534998B TW 534998 B TW534998 B TW 534998B TW 089101415 A TW089101415 A TW 089101415A TW 89101415 A TW89101415 A TW 89101415A TW 534998 B TW534998 B TW 534998B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
534998 A7 B7 五、發明説明(y 經濟部智慧財產局員工消費合作社印製 1 8 〇 夾 具 1 7 〇 探 針 卡 1 9 0 接 觸 裝 1 1 0 電 纜 1 9 4 接 線 1 9 7 電 極 1 9 3 電 容 器 1 9 5 電 容 器 1 9 6 條 片 線 3 〇 接 觸 裝 置 2 〇 接 觸 基 體 4 〇 矽 基 體 3 2 〇 接 觸 巨 2 4 連 接 絲 2 3 通 道 孔 2 2 電 極 4 8 硼 摻 雜 層 3 5 導 電 層 5 2 絕 緣 層 6 2 角 支 撐 3 6 白 由 空 間 4 2 光 阻 層 4 3 特 定 部 分 5 4 二氧化砂層 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) -14-
Claims (1)
- 534998經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 附件2a··第89101415號專利申請案修正後無劃線 之中文申請專利範圍替換本 民國92年1月28日修正 1 . 一種用來測試被測裝置的接觸裝置,包括: 一矽基底,具有以各向異性蝕刻法所製成的斜支撐部 5 形成於該砂基底上的複數條棒狀部,從斜支撐部突伸 出,該棒狀部每一個都包括:· 一絕緣層,用以使該棒狀部與其它部分電氣絕緣;以 及 一導電層,由導電材料所製成,形成於絕緣層上,俾 使絕緣層與導電層構成一棒狀部; 其中’該棒狀部在其橫向方向上顯現簧力,當該棒狀 部的尖端壓向一接觸目標時,該棒狀部建立一接觸力。 2 ·如申請專利範圍第1項的接觸裝置,更包括一硼 摻雜層,位於該矽基底與該絕緣層之間。 3 .如申請專利範圍第1項的接觸裝置,其中該導電 層是由導電金屬所製成,且是以電鍍法來予以形成。 4 .如申請專利範圍第1項的接觸裝置,其中該絕緣 層是由二氧化矽所構成的。 .5 · —種用來測試被測裝置的接觸裝置,包括: 複數條接觸棒,每一條都在其橫向方向上顯現簧力, (請先聞讀背面之注意事項再填寫本頁) •裝· 、1T 線 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) 534998 A8 B8 C8 D8 六、申請專利範圍 當該接觸棒的尖端壓向一接觸目標時,該接觸棒建立一接 觸力,每一條該接觸棒包括: 一矽基底’具有以各向異性蝕刻法所製成的斜支撐部 一絕緣層,用以使該棒狀部與其它部分電氣絕緣;以 及 一導電層,由導電材料所製成,形成於絕緣層上,俾 使絕緣層與導電層構成一棒狀部; 一接觸基體,用以固定該複數條接觸棒,該接觸基體 具有槽,用以容納該矽基底於其中,其係以對角線的方向 固定該接觸棒;以及 複數條接觸絲,配置於該接觸基體的表面,並分別連 接到該接觸棒,以建立與接觸基體向外之電氣組件間的信 號路徑。 6 ·如申請專利範圍第5項的接觸裝置,其中該接觸 基體是由矽所製成的。 7 ·如申請專利範圍第5項的接觸裝置,其中該接觸 基體是由陶瓷所製成的。 8 ·如申請專利範圍第5項的接觸裝置,更包括: 在該接觸基體上的複數個通道孔,並連接到該複數條 接觸絲,用以建立該接觸基體之上表面與底表面間的電氣 連接;以及 複數個電極連接到該複數個通道孔,用以建立該外部 電氣阻件到該接觸基體的電氣連接。 本#^張尺度適用中國國家標準((:奶)厶4規格(210\297公釐) ^ : ' (請先閲讀背面之注意事項再填寫本頁) 裝· 、1T 經濟部智慧財產局員工消費合作社印製 534998經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 9 ·如申請專利範圍第5項的接觸裝置,更包括一硼 摻雜層,位於該矽基底與該絕緣層之間。 1 〇 .如申請專利範圍第5項的接觸裝置,其中該導 電層是由導電金屬所製成,且是以電鍍法來予以形成。 1 1 .如申請專利範圍第5項的接觸裝置,其中該絕 緣層是由二氧化矽所製成的。 1 2 · —種用來測試被測裝置的接觸裝置,包括: 複數條接觸棒,每一條都在其橫向方向上顯現簧力, 當該接觸棒的尖端壓向一接觸目標時,該接觸棒建立 一接觸力,每一條該接觸棒包括: 一砂基底,具有兩個斜部,至少其中之一是以各 向異性蝕刻法所製成; 一絕緣層,用以使該棒狀部與其它部分電氣絕緣 ;以及 一導電層,由導電材料所製成,形成於絕緣層上 ,俾使絕緣層與導電層構成一棒狀部; 一接觸基體,用以固定該複數條接觸棒,該接觸基體 具有一平面供安裝該矽基底,以黏著劑將該接觸棒在 對角線的方向固定於該矽基底;以及· 複數條接觸絲,配置於該接觸基體的表面,並分·別連 接到該接觸棒,以建立與接觸基體向外之電氣組件間 的信號路徑。 . 1 3 ·如申g靑專利fe圍弟1 2項的接觸裝置,其中該 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) :3 -": (請先閱讀背面之注意事項再填寫本頁) •裝· 、1T 線534998 六、申請專利範圍 4 接觸基體是由矽所製成的。 1 4 ·如申請專利範圍第1 2項的接觸裝置,其中該 接觸基體是由陶瓷所製成的。 1 5 .如申請專利範圍第1 2項的接觸裝置,更包括 在該接觸基體上的複數個通道孔,並連接到該複數條 接觸絲,用以建立該接觸基體之上表面與底表面間的電氣 連接;以及 複數個電極連接到該複數個通道孔,用以建立該外部 電氣阻件到該接觸基體的電氣連接。 1 6 ·如申請專利範圍第1 2項的接觸裝置,更包括 一硼摻雜層,位於該矽基底與該絕緣層之間。 1 7 ·如申請專利範圍第1 2項的接觸裝置,其中該 導電層是由導電金屬所製成,且是以電鍍法來予以形成° 1 8 ·如申請專利範圍第1 2項的接觸裝置’其中該 絕緣層是由二氧化矽所構成的。 19.一種製造用來測試被測裝置之接觸裝置的方法 ,其步驟包括: 提供一砂基體,在它的(1 0 0 )晶面切割; 在該矽基體的上表面施加第一光刻製程,用以在該矽 基體的表面上形成硼摻雜層; 在該硼摻雜層上形成第一絕緣層; - 在該矽基體的底表面上形成第二絕緣層; 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ^— (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 534998 A8 B8 C8 D8 年月輯 々、申請專利範圍 5 在該第二絕緣層上施加第二光刻製程,用以在該第二 絕緣層上形成鈾刻窗口; 透過該鈾刻窗口執行各向異性蝕刻;以及 在該第一絕緣層上施加第三光刻製程,用以形成導電 層; 其中每一次的該光刻製程包括塗布光阻、遮罩、曝光 、及去除光阻等步驟。 ---------装------1T------ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US09/240,442 US6420884B1 (en) | 1999-01-29 | 1999-01-29 | Contact structure formed by photolithography process |
Publications (1)
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TW534998B true TW534998B (en) | 2003-06-01 |
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Application Number | Title | Priority Date | Filing Date |
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TW089101415A TW534998B (en) | 1999-01-29 | 2000-01-27 | Contact structure formed by photolithography process and method for producing the same |
Country Status (6)
Country | Link |
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US (3) | US6420884B1 (zh) |
JP (1) | JP3343540B2 (zh) |
KR (1) | KR100472580B1 (zh) |
DE (1) | DE10003282B4 (zh) |
SG (1) | SG84560A1 (zh) |
TW (1) | TW534998B (zh) |
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EP0615131A1 (en) * | 1993-03-10 | 1994-09-14 | Co-Operative Facility For Aging Tester Development | Prober for semiconductor integrated circuit element wafer |
JP3502874B2 (ja) * | 1994-06-03 | 2004-03-02 | 株式会社ルネサステクノロジ | 接続装置およびその製造方法 |
US5513430A (en) | 1994-08-19 | 1996-05-07 | Motorola, Inc. | Method for manufacturing a probe |
JP2632136B2 (ja) * | 1994-10-17 | 1997-07-23 | 日本電子材料株式会社 | 高温測定用プローブカード |
US5557214A (en) | 1995-02-06 | 1996-09-17 | Barnett; C. Kenneth | Micro beam probe semiconductor test interface |
US5621333A (en) | 1995-05-19 | 1997-04-15 | Microconnect, Inc. | Contact device for making connection to an electronic circuit device |
FR2762140B1 (fr) * | 1997-04-10 | 2000-01-14 | Mesatronic | Procede de fabrication d'une carte a pointes de contact multiple pour le test des puces semiconductrices |
US6297164B1 (en) * | 1998-11-30 | 2001-10-02 | Advantest Corp. | Method for producing contact structures |
US6218203B1 (en) * | 1999-06-28 | 2001-04-17 | Advantest Corp. | Method of producing a contact structure |
-
1999
- 1999-01-29 US US09/240,442 patent/US6420884B1/en not_active Expired - Fee Related
-
2000
- 2000-01-12 SG SG200000182A patent/SG84560A1/en unknown
- 2000-01-17 JP JP2000010297A patent/JP3343540B2/ja not_active Expired - Fee Related
- 2000-01-26 DE DE10003282A patent/DE10003282B4/de not_active Expired - Fee Related
- 2000-01-27 TW TW089101415A patent/TW534998B/zh not_active IP Right Cessation
- 2000-01-28 KR KR10-2000-0004199A patent/KR100472580B1/ko not_active IP Right Cessation
-
2002
- 2002-01-28 US US10/058,951 patent/US6466043B2/en not_active Expired - Fee Related
- 2002-01-28 US US10/058,483 patent/US6472890B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3343540B2 (ja) | 2002-11-11 |
DE10003282A1 (de) | 2000-10-19 |
JP2000249722A (ja) | 2000-09-14 |
DE10003282B4 (de) | 2007-05-10 |
US6420884B1 (en) | 2002-07-16 |
US6466043B2 (en) | 2002-10-15 |
US20020089342A1 (en) | 2002-07-11 |
SG84560A1 (en) | 2001-11-20 |
US6472890B2 (en) | 2002-10-29 |
KR100472580B1 (ko) | 2005-03-07 |
US20020089343A1 (en) | 2002-07-11 |
KR20000053655A (ko) | 2000-08-25 |
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