TW490786B - Wafer support with a dustproof covering film and method for producing the same - Google Patents

Wafer support with a dustproof covering film and method for producing the same Download PDF

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Publication number
TW490786B
TW490786B TW089113489A TW89113489A TW490786B TW 490786 B TW490786 B TW 490786B TW 089113489 A TW089113489 A TW 089113489A TW 89113489 A TW89113489 A TW 89113489A TW 490786 B TW490786 B TW 490786B
Authority
TW
Taiwan
Prior art keywords
silicone rubber
rubber layer
dust
wafer support
support table
Prior art date
Application number
TW089113489A
Other languages
English (en)
Inventor
Kazuhiko Tomaru
Tsutomu Yoneyama
Ryuichi Handa
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Application granted granted Critical
Publication of TW490786B publication Critical patent/TW490786B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/14—Layer or component removable to expose adhesive
    • Y10T428/1481—Dissimilar adhesives
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2813—Heat or solvent activated or sealable
    • Y10T428/2817—Heat sealable
    • Y10T428/2826—Synthetic resin or polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2848—Three or more layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31692—Next to addition polymer from unsaturated monomers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laminated Bodies (AREA)

Description

490786 A7 B7 五、發明説明（1 ) 本發明係有關供固定半導體晶圓於裝置製造裝置內的 處理室中而使用的晶圓支持台，其製法及其使用法。 (请先閱讀背面之注意事項再填寫本頁) 習知技術 近年，半導體裝置係隨著民生品之個人電腦、遊戲機 、行動電話等之令人注目的進展，對低成本化之要求乃正 被要求著，爲實現低成本化以提高半導體裝置之良品率乃 爲人所期待的。 經濟部智慧財產局員工消費合作社印製 至於半導體裝置之良品率降低之一個要因，係在其製 造步驟中有顆粒會附著於晶圓表面或晶圓背面上的問題存 在著。此顆粒因成爲電路之斷線或絕緣膜之絕緣不良等原 因，欲予降低一事即被強烈期待著。晶圓支持台係於諸如 曝光裝置、離子植入機、蝕刻裝置、CVD裝置、濺鍍裝 .置、燒觸（burriin)裝置等被使用於晶圓之固定，惟除精 確度良好的定位晶圓之性能外，以矯正晶圓之翹曲的性能 ，均勻保持晶圓之溫度的性能等即成爲重要的要求性能。 至目前爲止有具有夾持機構之陶瓷製支持台，具有夾持機 構之金屬製支持台，具有夾持機構之陶瓷及/或金屬製台 座之表面上已層合的矽氧橡膠之支持台，靜電夾頭等乃被 提出並使用者。尤其於陶瓷或金屬製台座之表面上以矽氧 橡膠爲機構之支持台由於以較低的成本且溫度保持性能優 越，乃被廣泛使用著。 發明欲解決的課題 本紙張尺度適用中國國家標準（CNS)A4規格（210X297公釐） -4- 490786 A7 ____B7_ 五、發明説明（2 ) (請先閲讀背面之注意事項再填寫本頁) 然而，於前述陶瓷及/或金屬製台座之表面上已層合 矽氧橡膠的支持台，於淸淨室製作出長久以來即實行的該 支持台，用純水洗淨後以塑膠薄膜製的袋子等直接包裝之 方法，在運送中於薄膜面及矽氧橡膠表面生成偏差，於矽 氧橡膠一塑膠薄膜間藉由摩擦由矽氧橡膠及塑膠薄膜之二 者會發生顆粒的問題。又，於上述裝置製造裝置安裝晶圓 支持台之情形，作業者有防止由經予曝露於大氣中的晶圓 支持台污染至矽氧橡膠表面的污染之需要，在不接觸該表 面下須進行作業，而有作業性顯著降低的問題存在。 解決課題而採的手段 爲解決前述課題，乃確立出在恰於使用之前需剝除經 予設置於支持台之矽氧橡膠層表面上的防塵用護膜下，於 運送中及安裝作業中可防止顆粒之發生或污染之陶瓷及/ 或金屬製台座之表面上具有矽氧橡膠層之晶圓支持台，及 可淸淨且價廉的提供製造該晶圓支持台之方法。 經濟部智慧財產局員工消費合作社印製 亦即，本發明之主題，係由台座，經予形成於前述台 座上成整體的實質上均勻的厚度之矽氧橡膠層，及覆蓋前 述矽氧橡膠層之可剝離的防塵用護膜而成，前述防塵用護 膜及前述矽氧橡膠層之間之剝離強度爲5〜5 0 0 g/ 2 5 mm之附有防塵用護膜之晶圓支持台。 本發明之另一主題爲由 (A)表面粗糙度（Ra)爲〇 · 1〜5 · 0//m之 工程紙上形成實質上均勻厚度之矽氧橡膠層之步驟， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 7^1 ' ~— 490786 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（3 ) (B )將前述矽氧橡膠層成形成指定的形狀，且形成 定位用導孔於前述工程紙上的步驟， (C )將接著劑塗布於台座之表面上的步驟，及 (D )將以前述步驟B而得的工程紙/矽氧橡膠層貼 合至前述台座之步驟，於前述工程紙/矽氧橡膠層與前述 台座之定位時採用前述導孔之步驟而成的附有防塵用護膜 之晶圓支持台之製法。 本發明之再另一主題，爲於曝光裝置、離子植入機、 蝕刻裝置、CVD裝置、濺鍍裝置或燒觸裝置之任一裝置 製造裝置內的處理室中，由前述矽氧橡膠層剝除前述防塵 用護膜之步驟及將半導體晶圓固定於前述晶圓支持台之步 驟而成的上述晶圓支持台之使用方法。 發明之實施形態 以下詳細說明本發明之附有防塵用護膜之晶圓支持台 之製法。 (A)首先於工程紙上形成矽氧橡膠層，工程紙2 1 及矽氧橡膠層2 2係作成整體（第1圖，於此步驟，矽氧 橡膠層2 2係以實質上均勻爲宜。又，此工程紙係於最終 的晶圓支持台上作用作防塵用護蓋。 經予形成於工程紙表面上的矽氧橡膠層若可予容易剝 除時則由於與橡膠薄膜間之磨擦會發生顆粒，並不合適， 故護膜及矽氧橡膠層間之剝離強度被指在5〜5 0 0 g/ 25mm(約〇·〇5〜約5N/25mm)，宜爲1〇 (請先閱讀背面之注意事項再填寫本頁) -裝- 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐） -6 - 490786 A7 _______Β7_ 五、發明説明（4 ) (請先閲讀背面之注意事項再填寫本頁) 〜l〇〇g/25mm(約0·1〜約lN/25mm) 之範圍者爲宜。在本發明剝離強度係在j I S κ 6 8 5 4之T型剝離試驗予以測定。又此範圍之剝離強 度係藉由將護膜（工程紙）之表面粗糙度（R a )設爲 〇 · 1〜5 · 〇//m，宜爲0 · 3〜2 · 〇em之範圍可 予製得。於本發明，表面粗糙度（R a )係以J I S B 0 6 0 1規定的方法予以測定。由而，矽氧橡膠在製造 步驟中，又在運送中，安裝作業中不能容易的剝除下可防 止由摩擦引起的顆粒之發生。Ra未滿0 · l//m時於製 造步驟之作業中有引起矽氧橡膠之脫落或位置偏差的情形 ，在運送中及安裝作業中防塵用護膜會剝除由於生成偏差 ，致有發生顆粒之情形，即使超過5 // m時，亦未能期待 矽氧橡膠之定位精確度之提高，薄膜有較難剝離的情形。 經濟部智慧財產局員工消费合作社印製 至於此工程紙若能滿足上述條件時亦可採用，任何薄 膜，惟由膜厚之均勻性，耐熱性及價格等的觀點，則以聚 對苯二甲酸乙二酯（P E T)薄膜，耐綸薄膜，聚醯亞胺 (P I )薄膜或PTF E薄膜等爲宜。又其膜厚由作業性 強度之點，宜爲2 5〜1 0 0 0 ，較宜爲5 0〜 3 0 0 # m。若過薄時，則由工程紙之剛性不足，會變成 較難處理，作業性變差。又若厚度過厚時，則在D步驟欲 開挖定位用之導孔係有困難的。 矽氧橡膠層2 2之膜厚在爲滿足上述的晶圓支持台之 要求性能時需要實質上呈均勻的。膜厚之精確度（厚度公 差）宜爲土〇 · 〇 5mm以下’尤宜爲±0 · 0 3mm以 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 490786 A7 B7 五、發明説明（5 ) (請先閲讀背面之注意事項再填寫本頁) 下。可使用於發明之矽氧橡膠2 2係以習用公知的可軋製 型，液狀型之任一性狀者均可使用作硬化前之性狀，又其 硬化形態亦可使用過氧化物硬化型，加成反應硬化型，紫 外線硬化型，電子線束硬化型等任一種硬化型者。使用可 軋製型者時，至於在工程紙上形成矽氧橡膠層之方法，由 壓延機法或擠壓機法可均勻的形成膜厚係較合適的。再者 因應必要時可合倂使用模壓法亦可提高膜厚精確度係合適 的。 又於使用液狀型時，以被覆法，噴佈法係較合適的， 惟爲提高膜厚精確度視必要時亦可合倂使用噴佈法。 可軋製型，液狀型均爲矽氧橡膠層之厚度在1 〇〜 2000//m，宜爲50〜500//m之範圍較合適。若 過薄時，則變成未能吸收晶圓之趨曲，則與晶圓間之附著 性降低，欲均勻的保持溫度f變成困難，若過厚時則未能 期待晶圓之趨曲的吸收性能，熱阻力亦變大故在成本上變 成不利。 經濟部智慧財產局員工消費合作社印製 (B )其次將前述矽氧橡膠成形成指定的形狀，且形 成定位用導孔於前述工程紙上。 於第2圖表示出此步驟所使用的沖壓用治具（工模） 及沖壓方法之例子。沖壓模4 3係於切割矽氧橡膠之刀刃 4 1及於工程紙上切割定位用導孔之刀刃4 2，以刀刃 4 2及刃刃4 1之高度之差設成矽氧橡膠之厚度以上，將 矽氧橡膠31半切割成指定形狀且可有效率的開啓定位用 的導孔3 2於工程紙上。又於此步驟結束後去除不需的矽 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) 7〇1 490786 A7 B7 五、發明説明（6 ) 氧橡膠層亦可。 (請先閱讀背面之注意事項再填寫本頁) 在此形成的導孔，係於後述的步驟（D )，將具有在 此步驟製作的矽氧橡膠層3 1之工程紙3 3貼合於台座的 情形使用於此工程紙/矽氧橡膠層與前述台座2間之定位 。因此導孔3 2之形狀，大小及數量係予適當選擇至滿足 此目的。 ' 於此步驟，導孔以外係無切割工程紙之必要，惟若爲 含有矽氧橡膠層及導孔之大小時，則切割成適當大小亦可 〇 此步驟而得的工程紙/矽氧橡膠層示於第3圖。 (C )其次塗布接著劑5 4於台座2之表面上。此台 座2係固定半導體晶圓者，若爲具有前述的要求性能時， 則任何材質均可，惟以陶瓷或金屬或此等之組合而成爲宜 〇 經濟部智慧財產局員工消費合作社印製 至於接著劑，例如可使用含有以由碳官能性矽烷及/ 或加水分解性有機鈦化合物選出的一種及/或二種以上的 化合物爲接著成分之液狀矽氧橡膠系接著劑，以有機溶劑 稀釋由碳官能性矽烷及/或加水分解性有機鈦化合物選出 的一種或二種以上的化合物者（亦稱作底塗劑 primer ) ， 或此等的組合。 至於塗布方法，較合適爲被覆法，噴布法，惟對接著 劑之情形以網版印刷法尤其合適。 (D )其次，於前述步驟B而得的工程紙上將經予沖 壓成指定形狀的矽氧橡膠層3 1與台座2定位並予貼合（ -9- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 490786 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（8 ) 組成 a :由二甲基矽氧烷單位9 9 · 8 5莫耳％及甲基乙烯基 砂氧院單位0 · 1 5莫耳％而成的平均聚合度 8 0 0 0之甲基乙烯基聚矽氧烷 1 〇 0重量分 b:過氧化對甲基苯甲醯基 2重量分 c :二氧化砂（Crystalite，龍森公司製造）1 5重量分 d :以六甲基二砂院經予表面處理的煙熏二氧化砂（比表 面積300g/m2) 30重量分 e:硬脂酸鋅 0.3重量分 其次，利用第2圖所示的沖壓模（中央矽氧橡膠部分 之直徑2 0 〇mm)對所得的P ET/矽氧橡膠複合薄片 進行沖壓加工，剝離去除不需的矽氧橡膠部分，而得第3 圖所示的P E T/矽氧橡膠複合薄片。此p E T/矽氧橡 膠複合薄片之剝離強度爲5 0 g/2 5mm。 其次，利用網版印刷法將接著劑K E 1 8 2 5 (信 越化學工業公司製造，加熱硬化型矽氧系接著劑）塗布於 直徑3 0 〇mm高度1 〇mm之鉛製台座之表面指定位置 上至成膜厚5 ，其次利用第4圖所示的工模層合 PET/矽氧橡膠複合薄片，以壓力3MP a，溫度 1 3 0°CX 3 0分鐘之條件接著成形。結果，以第5圖所 示的P E T製防塵用護膜而得矽氧橡膠層表面經予被覆的 晶圓支持台。 以純水經予淸淨洗淨所得的晶圓支持台之聚乙烯製之 (請先閲讀背面之注意事項再填寫本頁) |裝·
、1T -I# 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -H - 經濟部智慧財產局員工消費合作社印製 490786 A7 B7 五、發明説明（9 ) 袋子進行膜氣熱封緘後運送搬入半導體裝置製造步驟內， 安裝於離子植入裝置後剝除P E T製防塵用護膜。將半導 體晶圓利用機械人機構運送至晶圓支持台上並進行離子植 入後，用顆粒計數器（Surf scan 6200,日立製作所製造）測 定顆粒於該晶圓背面之附著量時，以0 · 2 //m〜2 //m 尺度的顆粒之檢出量爲1 2 3個，係非常少量的。 實施例2 在經予調整成1 0 0級之淸淨度的淸淨室內，於經予 施加珠擊加工的面之表面粗糙度R a = 〇 . 4 //m且膜厚 50"m之聚醯亞胺（PI)(與實施例1之PET相同 尺度）之珠擊面上塗布氟碳系脫模材Coat 100(信越化學工 業股份有限公司製造）後利用通常用塗布器塗布二液性加成 反應硬化型矽氧橡膠KE 196 3A/B，在150°C 烘箱中加熱硬化3 0分鐘，而得第2圖所示的P I /矽氧 橡膠複合薄片。此P I /矽氧橡膠複合薄片之剝離強度爲 100g/25mm〇 採用此P I /矽氧橡膠複合薄片取代P E T/矽氧橡 膠複合薄片，以與實施例1進行同樣的操作時，於晶圓背 面之0 · 2 //m〜2 //m尺度之顆粒檢出量爲1〇 3個， 係非常少量的。 比較例1 在經予調整成1 0 0級之淸淨度的淸淨室內，於表面 本^張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） Γ-|2- : ---------«批衣------、訂------0 (請先閲讀背面之注意事項再填寫本頁) 490786 A7 _____B7 五、發明説明（1〇 ) (請先閱讀背面之注意事項再填寫本頁) 粗糙度0 · 〇 5 //m且膜厚1 〇 0 //m之聚對苯二甲酸乙 二酯（PET)(與實施例1之PET相同尺度）之表面 上使用擠壓機將實施例1使用的組成之矽氧橡膠配合料擠 壓加工成膜厚2 0 0 //m並形成矽氧橡膠層後，在1 5 0 °C之烘箱中加熱硬化3 0分鐘後在2 0 0 °C進行後硬化4 小時，而得P E T/矽氧橡膠複合薄片。此P E T/矽氧 橡膠複合薄片之剝離強度爲1 g/2 5mm。 採用此P E T/矽氧橡膠複合薄片，進行與實施例1 相同的操作時，於晶圓背面之0 · 2 //m〜2 //m之尺度 的顆粒檢出量爲9 8 0 0個，係非常多量的。 發明之功效 本發明之晶圓支持台係在半導體製造步驟的顆粒之發 生量非常少且良好的，於運送中及安裝作業中可防止顆粒 之發明或污染。由而在半導體裝置內採用顆粒附著量較少 的半導體晶圓即成爲可能的。又依本發明之製法，可淸淨 且價廉的提供此晶圓支持台。 經濟部智慧財產局員工消費合作社印製 又將所得的附有防塵用護膜之晶圓支持台安裝於半導 體製造裝置之室內後，剝除防塵用護膜時’安裝作業係可 用手工進行，惟因可抓出護膜面，故可作業性良好且迅速 確實的進行作業即成爲可能的。 圖式之簡單說明__ 第1圖爲矽氧橡膠層經予整體的形成之工程紙之側視 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -13- 490786 A7 ΒΊ_____五、發明説明（11 ) 圖。 第2圖爲沖壓用工模之截面圖。 第3圖爲不需的矽氧橡膠部分經予剝離去除的工程糸氏 /矽氧橡膠層之平面圖及截面圖。 第4圖爲定位出工程紙/矽氧橡膠層與台座並予貼合 用之工模之截面圖。 、 第5圖爲所得的附有防塵用護膜之晶圓支持台之截面 圖。 第6圖爲工程紙（防塵用護膜）經予切割成與台座相 同形狀的附有防塵用護膜之晶圓支持台之平面圖及截面圖 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 圖號之說明 1 2 3，2 2，3 1 4，2 1 4 1 4 2 4 3，4 4 5 1，5 3 5 4 · 晶圓支持台 台座 砂氧橡膠層 工程紙（防塵用護膜） 矽氧橡膠層刀刃 導孔用刀刃 沖壓模 模具 接著劑。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） · 14 -

Claims (1)

  1. 490786 A8 B8 C8 D8 穴、申請專利乾圍 1 · 一種附有防塵用護膜之晶圓支持台，其特徵爲由 台座，經予形成於該台座上成整體的實質上具.有均勻厚度 之矽氧橡膠層，及覆蓋於該矽氧橡膠層之可剝離的防塵用 護膜而成，該防塵用護膜及該矽氧橡膠層間之剝離強度爲 5 〜500g/25mm 者。 2 . —種附有防塵用護膜之晶圓支持台之製法，其特 徵爲由 C A ) 表面粗糙度（Ra)爲0 _ 1〜5 · 0//m之工 程紙上形成實質上具均勻厚度之矽氧橡膠層之步 驟， (B ) 將該矽氧橡膠層成形爲指定形狀，且將形狀定位 用導孔形成於該工程紙上的步驟， (C ) 將接著劑塗布於台座之表面上的步驟，及 (D ) 將該步驟B所得工程紙/矽氧橡膠層貼合至該台 座之步驟，於定位該工程紙/矽氧橡膠層與該 台座之位置時採用該導孔之步驟所成。 3 · —種如申請專利範圍第1項之附有防塵用護膜之 晶圓支持台的使用方法，其特徵爲於曝光裝置，離子植入 機，蝕刻裝置，C V D裝置，濺鍍裝置或燒觸裝置之任一 裝置製造用裝置內的處理室中，施行自矽氧橡膠層剝除該 防塵用護膜之步驟，及將半導體晶圓固定於該晶圓支持台 之步驟所成。 本紙張尺度適用中國國家樑準（CNS ) A4規格（210X297公釐） L,-------φ-裝^------訂 --------φ-絲 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6807328B2 (en) * 1998-04-17 2004-10-19 John Farah Polished polyimide substrate
KR20020061737A (ko) * 2001-01-17 2002-07-25 삼성전자 주식회사 반도체 제조장치 및 반도체 제조장치의 웨이퍼 가공방법
JP4199485B2 (ja) * 2002-06-07 2008-12-17 久光製薬株式会社 貼付剤
US7512297B2 (en) * 2003-05-02 2009-03-31 John Farah Polymide substrate bonded to other substrate
JP2005236082A (ja) * 2004-02-20 2005-09-02 Nitto Denko Corp レーザーダイシング用粘着シート及びその製造方法
TWI420579B (zh) * 2005-07-12 2013-12-21 Creative Tech Corp And a foreign matter removing method for a substrate
US8107777B2 (en) * 2005-11-02 2012-01-31 John Farah Polyimide substrate bonded to other substrate
JP4381393B2 (ja) * 2006-04-28 2009-12-09 信越化学工業株式会社 静電チャック
JP5744386B2 (ja) * 2009-10-07 2015-07-08 日東電工株式会社 光半導体封止材
JP5781381B2 (ja) * 2011-06-28 2015-09-24 ローランドディー．ジー．株式会社 固定治具
DE102011079687A1 (de) 2011-07-22 2013-01-24 Wacker Chemie Ag Temporäre Verklebung von chemisch ähnlichen Substraten
JP5830377B2 (ja) * 2011-12-28 2015-12-09 リンテック株式会社 シート貼付装置、およびシート貼付方法
DE102012220954A1 (de) 2012-11-16 2014-05-22 Wacker Chemie Ag Schleifbare Siliconelastomerzusammensetzung und deren Verwendung
TW202408972A (zh) * 2019-10-02 2024-03-01 日商佳能股份有限公司 晶圓夾頭、晶圓夾頭的製造方法、及曝光裝置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179268A (en) * 1981-04-27 1982-11-04 Semedain Kk Epoxy resin adhesive composition
US4393130A (en) * 1982-01-11 1983-07-12 Critikon, Inc. System for encapsulation of semiconductor chips
DE3462799D1 (en) * 1983-12-12 1987-04-30 Takeda Chemical Industries Ltd Heat adherable resin compositions and aluminum sheet laminated with the compositions
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
JPS63193450A (ja) * 1987-02-03 1988-08-10 Nissin Electric Co Ltd 試料保持装置
US4832781A (en) * 1988-01-07 1989-05-23 Varian Associates, Inc. Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum
EP0436731A4 (en) * 1989-08-01 1992-12-09 Mitsui Toatsu Chemicals Inc. Film for wafer processing
WO1992005954A1 (fr) * 1990-09-28 1992-04-16 Daicel Chemical Industries, Ltd. Film composite
US5300172A (en) * 1991-11-01 1994-04-05 The Furukawa Electric Co., Ltd. Surface-protection method during etching
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
JP3308672B2 (ja) * 1993-02-26 2002-07-29 日東電工株式会社 接着シート
JP3121213B2 (ja) * 1994-07-27 2000-12-25 株式会社日立製作所 感光性樹脂組成物
CA2226485C (en) * 1995-07-10 2002-09-10 Japan Absorbent Technology Institute Porous composite sheet and process for the production thereof
JP3563863B2 (ja) * 1996-02-09 2004-09-08 大日本印刷株式会社 カバーテープ
US6071630A (en) * 1996-03-04 2000-06-06 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
JP3123491B2 (ja) * 1997-12-04 2001-01-09 松下電器産業株式会社 コンデンサ
JP3903447B2 (ja) * 1998-01-21 2007-04-11 リンテック株式会社 粘着シート
JP3871453B2 (ja) * 1998-03-12 2007-01-24 株式会社クラレ 熱可塑性重合体組成物
JP2000081514A (ja) * 1998-09-03 2000-03-21 Nitto Denko Corp 光学部材、セル基板及び液晶表示装置
US6263941B1 (en) * 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates

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