TW490786B - Wafer support with a dustproof covering film and method for producing the same - Google Patents
Wafer support with a dustproof covering film and method for producing the same Download PDFInfo
- Publication number
- TW490786B TW490786B TW089113489A TW89113489A TW490786B TW 490786 B TW490786 B TW 490786B TW 089113489 A TW089113489 A TW 089113489A TW 89113489 A TW89113489 A TW 89113489A TW 490786 B TW490786 B TW 490786B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicone rubber
- rubber layer
- dust
- wafer support
- support table
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/14—Layer or component removable to expose adhesive
- Y10T428/1481—Dissimilar adhesives
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2813—Heat or solvent activated or sealable
- Y10T428/2817—Heat sealable
- Y10T428/2826—Synthetic resin or polymer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2848—Three or more layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31692—Next to addition polymer from unsaturated monomers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laminated Bodies (AREA)
Description
490786 A7 B7 五、發明説明(1 ) 本發明係有關供固定半導體晶圓於裝置製造裝置內的 處理室中而使用的晶圓支持台,其製法及其使用法。 (请先閱讀背面之注意事項再填寫本頁) 習知技術 近年,半導體裝置係隨著民生品之個人電腦、遊戲機 、行動電話等之令人注目的進展,對低成本化之要求乃正 被要求著,爲實現低成本化以提高半導體裝置之良品率乃 爲人所期待的。 經濟部智慧財產局員工消費合作社印製 至於半導體裝置之良品率降低之一個要因,係在其製 造步驟中有顆粒會附著於晶圓表面或晶圓背面上的問題存 在著。此顆粒因成爲電路之斷線或絕緣膜之絕緣不良等原 因,欲予降低一事即被強烈期待著。晶圓支持台係於諸如 曝光裝置、離子植入機、蝕刻裝置、CVD裝置、濺鍍裝 .置、燒觸(burriin)裝置等被使用於晶圓之固定,惟除精 確度良好的定位晶圓之性能外,以矯正晶圓之翹曲的性能 ,均勻保持晶圓之溫度的性能等即成爲重要的要求性能。 至目前爲止有具有夾持機構之陶瓷製支持台,具有夾持機 構之金屬製支持台,具有夾持機構之陶瓷及/或金屬製台 座之表面上已層合的矽氧橡膠之支持台,靜電夾頭等乃被 提出並使用者。尤其於陶瓷或金屬製台座之表面上以矽氧 橡膠爲機構之支持台由於以較低的成本且溫度保持性能優 越,乃被廣泛使用著。 發明欲解決的課題 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) -4- 490786 A7 ____B7_ 五、發明説明(2 ) (請先閲讀背面之注意事項再填寫本頁) 然而,於前述陶瓷及/或金屬製台座之表面上已層合 矽氧橡膠的支持台,於淸淨室製作出長久以來即實行的該 支持台,用純水洗淨後以塑膠薄膜製的袋子等直接包裝之 方法,在運送中於薄膜面及矽氧橡膠表面生成偏差,於矽 氧橡膠一塑膠薄膜間藉由摩擦由矽氧橡膠及塑膠薄膜之二 者會發生顆粒的問題。又,於上述裝置製造裝置安裝晶圓 支持台之情形,作業者有防止由經予曝露於大氣中的晶圓 支持台污染至矽氧橡膠表面的污染之需要,在不接觸該表 面下須進行作業,而有作業性顯著降低的問題存在。 解決課題而採的手段 爲解決前述課題,乃確立出在恰於使用之前需剝除經 予設置於支持台之矽氧橡膠層表面上的防塵用護膜下,於 運送中及安裝作業中可防止顆粒之發生或污染之陶瓷及/ 或金屬製台座之表面上具有矽氧橡膠層之晶圓支持台,及 可淸淨且價廉的提供製造該晶圓支持台之方法。 經濟部智慧財產局員工消費合作社印製 亦即,本發明之主題,係由台座,經予形成於前述台 座上成整體的實質上均勻的厚度之矽氧橡膠層,及覆蓋前 述矽氧橡膠層之可剝離的防塵用護膜而成,前述防塵用護 膜及前述矽氧橡膠層之間之剝離強度爲5〜5 0 0 g/ 2 5 mm之附有防塵用護膜之晶圓支持台。 本發明之另一主題爲由 (A)表面粗糙度(Ra)爲〇 · 1〜5 · 0//m之 工程紙上形成實質上均勻厚度之矽氧橡膠層之步驟, 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 7^1 ' ~— 490786 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(3 ) (B )將前述矽氧橡膠層成形成指定的形狀,且形成 定位用導孔於前述工程紙上的步驟, (C )將接著劑塗布於台座之表面上的步驟,及 (D )將以前述步驟B而得的工程紙/矽氧橡膠層貼 合至前述台座之步驟,於前述工程紙/矽氧橡膠層與前述 台座之定位時採用前述導孔之步驟而成的附有防塵用護膜 之晶圓支持台之製法。 本發明之再另一主題,爲於曝光裝置、離子植入機、 蝕刻裝置、CVD裝置、濺鍍裝置或燒觸裝置之任一裝置 製造裝置內的處理室中,由前述矽氧橡膠層剝除前述防塵 用護膜之步驟及將半導體晶圓固定於前述晶圓支持台之步 驟而成的上述晶圓支持台之使用方法。 發明之實施形態 以下詳細說明本發明之附有防塵用護膜之晶圓支持台 之製法。 (A)首先於工程紙上形成矽氧橡膠層,工程紙2 1 及矽氧橡膠層2 2係作成整體(第1圖,於此步驟,矽氧 橡膠層2 2係以實質上均勻爲宜。又,此工程紙係於最終 的晶圓支持台上作用作防塵用護蓋。 經予形成於工程紙表面上的矽氧橡膠層若可予容易剝 除時則由於與橡膠薄膜間之磨擦會發生顆粒,並不合適, 故護膜及矽氧橡膠層間之剝離強度被指在5〜5 0 0 g/ 25mm(約〇·〇5〜約5N/25mm),宜爲1〇 (請先閱讀背面之注意事項再填寫本頁) -裝- 訂 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇X297公釐) -6 - 490786 A7 _______Β7_ 五、發明説明(4 ) (請先閲讀背面之注意事項再填寫本頁) 〜l〇〇g/25mm(約0·1〜約lN/25mm) 之範圍者爲宜。在本發明剝離強度係在j I S κ 6 8 5 4之T型剝離試驗予以測定。又此範圍之剝離強 度係藉由將護膜(工程紙)之表面粗糙度(R a )設爲 〇 · 1〜5 · 〇//m,宜爲0 · 3〜2 · 〇em之範圍可 予製得。於本發明,表面粗糙度(R a )係以J I S B 0 6 0 1規定的方法予以測定。由而,矽氧橡膠在製造 步驟中,又在運送中,安裝作業中不能容易的剝除下可防 止由摩擦引起的顆粒之發生。Ra未滿0 · l//m時於製 造步驟之作業中有引起矽氧橡膠之脫落或位置偏差的情形 ,在運送中及安裝作業中防塵用護膜會剝除由於生成偏差 ,致有發生顆粒之情形,即使超過5 // m時,亦未能期待 矽氧橡膠之定位精確度之提高,薄膜有較難剝離的情形。 經濟部智慧財產局員工消费合作社印製 至於此工程紙若能滿足上述條件時亦可採用,任何薄 膜,惟由膜厚之均勻性,耐熱性及價格等的觀點,則以聚 對苯二甲酸乙二酯(P E T)薄膜,耐綸薄膜,聚醯亞胺 (P I )薄膜或PTF E薄膜等爲宜。又其膜厚由作業性 強度之點,宜爲2 5〜1 0 0 0 ,較宜爲5 0〜 3 0 0 # m。若過薄時,則由工程紙之剛性不足,會變成 較難處理,作業性變差。又若厚度過厚時,則在D步驟欲 開挖定位用之導孔係有困難的。 矽氧橡膠層2 2之膜厚在爲滿足上述的晶圓支持台之 要求性能時需要實質上呈均勻的。膜厚之精確度(厚度公 差)宜爲土〇 · 〇 5mm以下’尤宜爲±0 · 0 3mm以 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 490786 A7 B7 五、發明説明(5 ) (請先閲讀背面之注意事項再填寫本頁) 下。可使用於發明之矽氧橡膠2 2係以習用公知的可軋製 型,液狀型之任一性狀者均可使用作硬化前之性狀,又其 硬化形態亦可使用過氧化物硬化型,加成反應硬化型,紫 外線硬化型,電子線束硬化型等任一種硬化型者。使用可 軋製型者時,至於在工程紙上形成矽氧橡膠層之方法,由 壓延機法或擠壓機法可均勻的形成膜厚係較合適的。再者 因應必要時可合倂使用模壓法亦可提高膜厚精確度係合適 的。 又於使用液狀型時,以被覆法,噴佈法係較合適的, 惟爲提高膜厚精確度視必要時亦可合倂使用噴佈法。 可軋製型,液狀型均爲矽氧橡膠層之厚度在1 〇〜 2000//m,宜爲50〜500//m之範圍較合適。若 過薄時,則變成未能吸收晶圓之趨曲,則與晶圓間之附著 性降低,欲均勻的保持溫度f變成困難,若過厚時則未能 期待晶圓之趨曲的吸收性能,熱阻力亦變大故在成本上變 成不利。 經濟部智慧財產局員工消費合作社印製 (B )其次將前述矽氧橡膠成形成指定的形狀,且形 成定位用導孔於前述工程紙上。 於第2圖表示出此步驟所使用的沖壓用治具(工模) 及沖壓方法之例子。沖壓模4 3係於切割矽氧橡膠之刀刃 4 1及於工程紙上切割定位用導孔之刀刃4 2,以刀刃 4 2及刃刃4 1之高度之差設成矽氧橡膠之厚度以上,將 矽氧橡膠31半切割成指定形狀且可有效率的開啓定位用 的導孔3 2於工程紙上。又於此步驟結束後去除不需的矽 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 7〇1 490786 A7 B7 五、發明説明(6 ) 氧橡膠層亦可。 (請先閱讀背面之注意事項再填寫本頁) 在此形成的導孔,係於後述的步驟(D ),將具有在 此步驟製作的矽氧橡膠層3 1之工程紙3 3貼合於台座的 情形使用於此工程紙/矽氧橡膠層與前述台座2間之定位 。因此導孔3 2之形狀,大小及數量係予適當選擇至滿足 此目的。 ' 於此步驟,導孔以外係無切割工程紙之必要,惟若爲 含有矽氧橡膠層及導孔之大小時,則切割成適當大小亦可 〇 此步驟而得的工程紙/矽氧橡膠層示於第3圖。 (C )其次塗布接著劑5 4於台座2之表面上。此台 座2係固定半導體晶圓者,若爲具有前述的要求性能時, 則任何材質均可,惟以陶瓷或金屬或此等之組合而成爲宜 〇 經濟部智慧財產局員工消費合作社印製 至於接著劑,例如可使用含有以由碳官能性矽烷及/ 或加水分解性有機鈦化合物選出的一種及/或二種以上的 化合物爲接著成分之液狀矽氧橡膠系接著劑,以有機溶劑 稀釋由碳官能性矽烷及/或加水分解性有機鈦化合物選出 的一種或二種以上的化合物者(亦稱作底塗劑 primer ) , 或此等的組合。 至於塗布方法,較合適爲被覆法,噴布法,惟對接著 劑之情形以網版印刷法尤其合適。 (D )其次,於前述步驟B而得的工程紙上將經予沖 壓成指定形狀的矽氧橡膠層3 1與台座2定位並予貼合( -9- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 490786 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(8 ) 組成 a :由二甲基矽氧烷單位9 9 · 8 5莫耳%及甲基乙烯基 砂氧院單位0 · 1 5莫耳%而成的平均聚合度 8 0 0 0之甲基乙烯基聚矽氧烷 1 〇 0重量分 b:過氧化對甲基苯甲醯基 2重量分 c :二氧化砂(Crystalite,龍森公司製造)1 5重量分 d :以六甲基二砂院經予表面處理的煙熏二氧化砂(比表 面積300g/m2) 30重量分 e:硬脂酸鋅 0.3重量分 其次,利用第2圖所示的沖壓模(中央矽氧橡膠部分 之直徑2 0 〇mm)對所得的P ET/矽氧橡膠複合薄片 進行沖壓加工,剝離去除不需的矽氧橡膠部分,而得第3 圖所示的P E T/矽氧橡膠複合薄片。此p E T/矽氧橡 膠複合薄片之剝離強度爲5 0 g/2 5mm。 其次,利用網版印刷法將接著劑K E 1 8 2 5 (信 越化學工業公司製造,加熱硬化型矽氧系接著劑)塗布於 直徑3 0 〇mm高度1 〇mm之鉛製台座之表面指定位置 上至成膜厚5 ,其次利用第4圖所示的工模層合 PET/矽氧橡膠複合薄片,以壓力3MP a,溫度 1 3 0°CX 3 0分鐘之條件接著成形。結果,以第5圖所 示的P E T製防塵用護膜而得矽氧橡膠層表面經予被覆的 晶圓支持台。 以純水經予淸淨洗淨所得的晶圓支持台之聚乙烯製之 (請先閲讀背面之注意事項再填寫本頁) |裝·
、1T -I# 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) -H - 經濟部智慧財產局員工消費合作社印製 490786 A7 B7 五、發明説明(9 ) 袋子進行膜氣熱封緘後運送搬入半導體裝置製造步驟內, 安裝於離子植入裝置後剝除P E T製防塵用護膜。將半導 體晶圓利用機械人機構運送至晶圓支持台上並進行離子植 入後,用顆粒計數器(Surf scan 6200,日立製作所製造)測 定顆粒於該晶圓背面之附著量時,以0 · 2 //m〜2 //m 尺度的顆粒之檢出量爲1 2 3個,係非常少量的。 實施例2 在經予調整成1 0 0級之淸淨度的淸淨室內,於經予 施加珠擊加工的面之表面粗糙度R a = 〇 . 4 //m且膜厚 50"m之聚醯亞胺(PI)(與實施例1之PET相同 尺度)之珠擊面上塗布氟碳系脫模材Coat 100(信越化學工 業股份有限公司製造)後利用通常用塗布器塗布二液性加成 反應硬化型矽氧橡膠KE 196 3A/B,在150°C 烘箱中加熱硬化3 0分鐘,而得第2圖所示的P I /矽氧 橡膠複合薄片。此P I /矽氧橡膠複合薄片之剝離強度爲 100g/25mm〇 採用此P I /矽氧橡膠複合薄片取代P E T/矽氧橡 膠複合薄片,以與實施例1進行同樣的操作時,於晶圓背 面之0 · 2 //m〜2 //m尺度之顆粒檢出量爲1〇 3個, 係非常少量的。 比較例1 在經予調整成1 0 0級之淸淨度的淸淨室內,於表面 本^張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) Γ-|2- : ---------«批衣------、訂------0 (請先閲讀背面之注意事項再填寫本頁) 490786 A7 _____B7 五、發明説明(1〇 ) (請先閱讀背面之注意事項再填寫本頁) 粗糙度0 · 〇 5 //m且膜厚1 〇 0 //m之聚對苯二甲酸乙 二酯(PET)(與實施例1之PET相同尺度)之表面 上使用擠壓機將實施例1使用的組成之矽氧橡膠配合料擠 壓加工成膜厚2 0 0 //m並形成矽氧橡膠層後,在1 5 0 °C之烘箱中加熱硬化3 0分鐘後在2 0 0 °C進行後硬化4 小時,而得P E T/矽氧橡膠複合薄片。此P E T/矽氧 橡膠複合薄片之剝離強度爲1 g/2 5mm。 採用此P E T/矽氧橡膠複合薄片,進行與實施例1 相同的操作時,於晶圓背面之0 · 2 //m〜2 //m之尺度 的顆粒檢出量爲9 8 0 0個,係非常多量的。 發明之功效 本發明之晶圓支持台係在半導體製造步驟的顆粒之發 生量非常少且良好的,於運送中及安裝作業中可防止顆粒 之發明或污染。由而在半導體裝置內採用顆粒附著量較少 的半導體晶圓即成爲可能的。又依本發明之製法,可淸淨 且價廉的提供此晶圓支持台。 經濟部智慧財產局員工消費合作社印製 又將所得的附有防塵用護膜之晶圓支持台安裝於半導 體製造裝置之室內後,剝除防塵用護膜時’安裝作業係可 用手工進行,惟因可抓出護膜面,故可作業性良好且迅速 確實的進行作業即成爲可能的。 圖式之簡單說明__ 第1圖爲矽氧橡膠層經予整體的形成之工程紙之側視 本纸張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) -13- 490786 A7 ΒΊ_____五、發明説明(11 ) 圖。 第2圖爲沖壓用工模之截面圖。 第3圖爲不需的矽氧橡膠部分經予剝離去除的工程糸氏 /矽氧橡膠層之平面圖及截面圖。 第4圖爲定位出工程紙/矽氧橡膠層與台座並予貼合 用之工模之截面圖。 、 第5圖爲所得的附有防塵用護膜之晶圓支持台之截面 圖。 第6圖爲工程紙(防塵用護膜)經予切割成與台座相 同形狀的附有防塵用護膜之晶圓支持台之平面圖及截面圖 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 圖號之說明 1 2 3,2 2,3 1 4,2 1 4 1 4 2 4 3,4 4 5 1,5 3 5 4 · 晶圓支持台 台座 砂氧橡膠層 工程紙(防塵用護膜) 矽氧橡膠層刀刃 導孔用刀刃 沖壓模 模具 接著劑。 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) · 14 -
Claims (1)
- 490786 A8 B8 C8 D8 穴、申請專利乾圍 1 · 一種附有防塵用護膜之晶圓支持台,其特徵爲由 台座,經予形成於該台座上成整體的實質上具.有均勻厚度 之矽氧橡膠層,及覆蓋於該矽氧橡膠層之可剝離的防塵用 護膜而成,該防塵用護膜及該矽氧橡膠層間之剝離強度爲 5 〜500g/25mm 者。 2 . —種附有防塵用護膜之晶圓支持台之製法,其特 徵爲由 C A ) 表面粗糙度(Ra)爲0 _ 1〜5 · 0//m之工 程紙上形成實質上具均勻厚度之矽氧橡膠層之步 驟, (B ) 將該矽氧橡膠層成形爲指定形狀,且將形狀定位 用導孔形成於該工程紙上的步驟, (C ) 將接著劑塗布於台座之表面上的步驟,及 (D ) 將該步驟B所得工程紙/矽氧橡膠層貼合至該台 座之步驟,於定位該工程紙/矽氧橡膠層與該 台座之位置時採用該導孔之步驟所成。 3 · —種如申請專利範圍第1項之附有防塵用護膜之 晶圓支持台的使用方法,其特徵爲於曝光裝置,離子植入 機,蝕刻裝置,C V D裝置,濺鍍裝置或燒觸裝置之任一 裝置製造用裝置內的處理室中,施行自矽氧橡膠層剝除該 防塵用護膜之步驟,及將半導體晶圓固定於該晶圓支持台 之步驟所成。 本紙張尺度適用中國國家樑準(CNS ) A4規格(210X297公釐) L,-------φ-裝^------訂 --------φ-絲 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製
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JP27621699A JP3763710B2 (ja) | 1999-09-29 | 1999-09-29 | 防塵用カバーフィルム付きウエハ支持台及びその製造方法 |
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TW089113489A TW490786B (en) | 1999-09-29 | 2000-07-07 | Wafer support with a dustproof covering film and method for producing the same |
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US (1) | US6563195B1 (zh) |
EP (1) | EP1089326B1 (zh) |
JP (1) | JP3763710B2 (zh) |
DE (1) | DE60033999D1 (zh) |
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US6807328B2 (en) * | 1998-04-17 | 2004-10-19 | John Farah | Polished polyimide substrate |
KR20020061737A (ko) * | 2001-01-17 | 2002-07-25 | 삼성전자 주식회사 | 반도체 제조장치 및 반도체 제조장치의 웨이퍼 가공방법 |
JP4199485B2 (ja) * | 2002-06-07 | 2008-12-17 | 久光製薬株式会社 | 貼付剤 |
US7512297B2 (en) * | 2003-05-02 | 2009-03-31 | John Farah | Polymide substrate bonded to other substrate |
JP2005236082A (ja) * | 2004-02-20 | 2005-09-02 | Nitto Denko Corp | レーザーダイシング用粘着シート及びその製造方法 |
TWI420579B (zh) * | 2005-07-12 | 2013-12-21 | Creative Tech Corp | And a foreign matter removing method for a substrate |
US8107777B2 (en) * | 2005-11-02 | 2012-01-31 | John Farah | Polyimide substrate bonded to other substrate |
JP4381393B2 (ja) * | 2006-04-28 | 2009-12-09 | 信越化学工業株式会社 | 静電チャック |
JP5744386B2 (ja) * | 2009-10-07 | 2015-07-08 | 日東電工株式会社 | 光半導体封止材 |
JP5781381B2 (ja) * | 2011-06-28 | 2015-09-24 | ローランドディー.ジー.株式会社 | 固定治具 |
DE102011079687A1 (de) | 2011-07-22 | 2013-01-24 | Wacker Chemie Ag | Temporäre Verklebung von chemisch ähnlichen Substraten |
JP5830377B2 (ja) * | 2011-12-28 | 2015-12-09 | リンテック株式会社 | シート貼付装置、およびシート貼付方法 |
DE102012220954A1 (de) | 2012-11-16 | 2014-05-22 | Wacker Chemie Ag | Schleifbare Siliconelastomerzusammensetzung und deren Verwendung |
TW202408972A (zh) * | 2019-10-02 | 2024-03-01 | 日商佳能股份有限公司 | 晶圓夾頭、晶圓夾頭的製造方法、及曝光裝置 |
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JPS57179268A (en) * | 1981-04-27 | 1982-11-04 | Semedain Kk | Epoxy resin adhesive composition |
US4393130A (en) * | 1982-01-11 | 1983-07-12 | Critikon, Inc. | System for encapsulation of semiconductor chips |
DE3462799D1 (en) * | 1983-12-12 | 1987-04-30 | Takeda Chemical Industries Ltd | Heat adherable resin compositions and aluminum sheet laminated with the compositions |
JPH0697676B2 (ja) * | 1985-11-26 | 1994-11-30 | 忠弘 大見 | ウエハサセプタ装置 |
JPS63193450A (ja) * | 1987-02-03 | 1988-08-10 | Nissin Electric Co Ltd | 試料保持装置 |
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EP0436731A4 (en) * | 1989-08-01 | 1992-12-09 | Mitsui Toatsu Chemicals Inc. | Film for wafer processing |
WO1992005954A1 (fr) * | 1990-09-28 | 1992-04-16 | Daicel Chemical Industries, Ltd. | Film composite |
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US5268065A (en) * | 1992-12-21 | 1993-12-07 | Motorola, Inc. | Method for thinning a semiconductor wafer |
JP3308672B2 (ja) * | 1993-02-26 | 2002-07-29 | 日東電工株式会社 | 接着シート |
JP3121213B2 (ja) * | 1994-07-27 | 2000-12-25 | 株式会社日立製作所 | 感光性樹脂組成物 |
CA2226485C (en) * | 1995-07-10 | 2002-09-10 | Japan Absorbent Technology Institute | Porous composite sheet and process for the production thereof |
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JP3123491B2 (ja) * | 1997-12-04 | 2001-01-09 | 松下電器産業株式会社 | コンデンサ |
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-
1999
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- 2000-09-28 DE DE60033999T patent/DE60033999D1/de not_active Expired - Lifetime
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US6563195B1 (en) | 2003-05-13 |
JP3763710B2 (ja) | 2006-04-05 |
EP1089326A3 (en) | 2005-12-07 |
EP1089326A2 (en) | 2001-04-04 |
DE60033999D1 (de) | 2007-05-03 |
EP1089326B1 (en) | 2007-03-21 |
JP2001102430A (ja) | 2001-04-13 |
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