TW445301B - A shadow mask, a method of forming the shadow mask, and a method of manufacturing a semiconductor device using the shadow mask - Google Patents

A shadow mask, a method of forming the shadow mask, and a method of manufacturing a semiconductor device using the shadow mask Download PDF

Info

Publication number: TW445301B
Authority: TW; Taiwan
Prior art keywords: layer; film; support; forming; mask
Prior art date: 1998-10-23

Application number

TW088118356A

Other languages

English (en)

Chinese (zh)

Inventor

Shinichi Fukuzawa

Shigeyoshi Ootsuki

Original Assignee

Nippon Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-10-23

Filing date

1999-10-21

Publication date

2001-07-11

1999-10-21 Application filed by Nippon Electric Co filed Critical Nippon Electric Co

2001-07-11 Application granted granted Critical

2001-07-11 Publication of TW445301B publication Critical patent/TW445301B/zh

Links

238000000034 method Methods 0.000 title claims description 29
238000004519 manufacturing process Methods 0.000 title claims description 18
239000004065 semiconductor Substances 0.000 title claims description 9
239000000758 substrate Substances 0.000 claims abstract description 53
239000000463 material Substances 0.000 claims abstract description 46
238000005530 etching Methods 0.000 claims abstract description 34
229920001721 polyimide Polymers 0.000 claims abstract description 24
239000010410 layer Substances 0.000 claims description 193
239000010408 film Substances 0.000 claims description 116
239000002344 surface layer Substances 0.000 claims description 48
230000004888 barrier function Effects 0.000 claims description 43
239000007789 gas Substances 0.000 claims description 27
230000015572 biosynthetic process Effects 0.000 claims description 20
239000010409 thin film Substances 0.000 claims description 17
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
239000001301 oxygen Substances 0.000 claims description 6
229910052760 oxygen Inorganic materials 0.000 claims description 6
229910052709 silver Inorganic materials 0.000 claims description 6
239000004332 silver Substances 0.000 claims description 6
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 4
230000003647 oxidation Effects 0.000 claims description 4
238000007254 oxidation reaction Methods 0.000 claims description 4
229910052814 silicon oxide Inorganic materials 0.000 claims description 4
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
239000004642 Polyimide Substances 0.000 claims description 2
229910001882 dioxygen Inorganic materials 0.000 claims description 2
238000009413 insulation Methods 0.000 claims description 2
230000001678 irradiating effect Effects 0.000 claims description 2
235000010627 Phaseolus vulgaris Nutrition 0.000 claims 1
244000046052 Phaseolus vulgaris Species 0.000 claims 1
239000002689 soil Substances 0.000 claims 1
238000001704 evaporation Methods 0.000 abstract description 7
230000008020 evaporation Effects 0.000 abstract description 7
238000005401 electroluminescence Methods 0.000 description 19
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
239000002245 particle Substances 0.000 description 13
229910052710 silicon Inorganic materials 0.000 description 13
239000010703 silicon Substances 0.000 description 13
230000005012 migration Effects 0.000 description 11
238000013508 migration Methods 0.000 description 11
239000004020 conductor Substances 0.000 description 9
229910052782 aluminium Inorganic materials 0.000 description 8
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
230000008569 process Effects 0.000 description 7
238000012546 transfer Methods 0.000 description 7
238000007740 vapor deposition Methods 0.000 description 7
238000005229 chemical vapour deposition Methods 0.000 description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
229910052581 Si3N4 Inorganic materials 0.000 description 3
229910052796 boron Inorganic materials 0.000 description 3
239000011521 glass Substances 0.000 description 3
230000005525 hole transport Effects 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
150000004767 nitrides Chemical class 0.000 description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
238000007738 vacuum evaporation Methods 0.000 description 3
235000012431 wafers Nutrition 0.000 description 3
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
239000011159 matrix material Substances 0.000 description 2
239000000203 mixture Substances 0.000 description 2
229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
-1 p-fluorenylaminophenylethenyl Chemical group 0.000 description 2
125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
238000000206 photolithography Methods 0.000 description 2
239000004575 stone Substances 0.000 description 2
JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
229910052779 Neodymium Inorganic materials 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
240000007594 Oryza sativa Species 0.000 description 1
235000007164 Oryza sativa Nutrition 0.000 description 1
239000007983 Tris buffer Substances 0.000 description 1
229960000583 acetic acid Drugs 0.000 description 1
APLQAVQJYBLXDR-UHFFFAOYSA-N aluminum quinoline Chemical compound [Al+3].N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12 APLQAVQJYBLXDR-UHFFFAOYSA-N 0.000 description 1
238000013459 approach Methods 0.000 description 1
238000005452 bending Methods 0.000 description 1
239000007853 buffer solution Substances 0.000 description 1
125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
238000005266 casting Methods 0.000 description 1
230000008859 change Effects 0.000 description 1
239000000460 chlorine Substances 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
239000003086 colorant Substances 0.000 description 1
238000013461 design Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000012362 glacial acetic acid Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
150000002466 imines Chemical class 0.000 description 1
RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
229910052500 inorganic mineral Inorganic materials 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
238000002386 leaching Methods 0.000 description 1
239000010985 leather Substances 0.000 description 1
229910052744 lithium Inorganic materials 0.000 description 1
125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
239000011707 mineral Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
238000000059 patterning Methods 0.000 description 1
125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
RONWGALEIBILOG-VMJVVOMYSA-N quinine sulfate Chemical compound [H+].[H+].[O-]S([O-])(=O)=O.C([C@H]([C@H](C1)C=C)C2)C[N@@]1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OC)C=C21.C([C@H]([C@H](C1)C=C)C2)C[N@@]1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OC)C=C21 RONWGALEIBILOG-VMJVVOMYSA-N 0.000 description 1
235000009566 rice Nutrition 0.000 description 1
239000004576 sand Substances 0.000 description 1
150000003377 silicon compounds Chemical class 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
238000000859 sublimation Methods 0.000 description 1
230000008022 sublimation Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1
229910001887 tin oxide Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/06—Screens for shielding; Masks interposed in the electron stream
- H01J29/07—Shadow masks for colour television tubes
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Manufacturing & Machinery (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Electroluminescent Light Sources (AREA)
Physical Vapour Deposition (AREA)

TW088118356A 1998-10-23 1999-10-21 A shadow mask, a method of forming the shadow mask, and a method of manufacturing a semiconductor device using the shadow mask TW445301B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP10301844A JP3024641B1 (ja)	1998-10-23	1998-10-23	シャドウマスク及びその製造方法並びにシャドウマスクを用いた有機ｅｌディスプレイの製造方法

Publications (1)

Publication Number	Publication Date
TW445301B true TW445301B (en)	2001-07-11

Family

ID=17901850

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW088118356A TW445301B (en)	1998-10-23	1999-10-21	A shadow mask, a method of forming the shadow mask, and a method of manufacturing a semiconductor device using the shadow mask

Country Status (4)

Country	Link
US (3)	US6459193B1 (ja)
JP (1)	JP3024641B1 (ja)
KR (1)	KR100341154B1 (ja)
TW (1)	TW445301B (ja)

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US6716656B2 (en) *	2001-09-04	2004-04-06	The Trustees Of Princeton University	Self-aligned hybrid deposition
JP3775493B2 (ja)	2001-09-20	2006-05-17	セイコーエプソン株式会社	マスクの製造方法
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KR100480705B1 (ko) *	2002-07-03	2005-04-06	엘지전자 주식회사	유기 ｅｌ 소자 제작용 새도우 마스크 및 그 제조 방법
KR100525819B1 (ko) *	2003-05-06	2005-11-03	엘지전자 주식회사	유기 이엘 디스플레이 패널 제조용 새도우 마스크
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KR100659057B1 (ko) *	2004-07-15	2006-12-21	삼성에스디아이 주식회사	박막 증착용 마스크 프레임 조립체 및 유기 전계 발광표시장치
JP2006201538A (ja) *	2005-01-21	2006-08-03	Seiko Epson Corp	マスク、マスクの製造方法、パターン形成方法、配線パターン形成方法
KR100923080B1 (ko) *	2008-02-29	2009-10-22	오충식	디스플레이 증착용 마스크 및 그 제조방법
JP2009252539A (ja)	2008-04-07	2009-10-29	Seiko Epson Corp	有機ｅｌパネルの製造方法及び有機ｅｌパネル並びに電子機器
EP2425034B1 (en) *	2009-04-03	2016-07-13	OSRAM OLED GmbH	An arrangement for holding a substrate in a material deposition apparatus
JP5568683B2 (ja) *	2013-12-25	2014-08-06	株式会社半導体エネルギー研究所	蒸着用マスク、及び当該マスクを用いた蒸着方法
US9755104B2 (en) *	2014-05-09	2017-09-05	Epistar Corporation	Method of manufacturing optoelectronic element having rough surface
JP6594615B2 (ja) *	2014-10-06	2019-10-23	株式会社ジャパンディスプレイ	蒸着用マスク及びそれを用いた有機ｅｌ表示装置の製造方法、並びに、蒸着用マスクの製造方法
WO2017026741A1 (ko) *	2015-08-10	2017-02-16	에이피시스템 주식회사	복합 가공 방법을 이용한 섀도우 마스크의 제조방법 및 이에 의해 제조된 섀도우 마스크
KR101674499B1 (ko) *	2015-08-10	2016-11-10	에이피시스템 주식회사	복합 가공 방법을 이용한 섀도우 마스크의 제조방법 및 이에 의해 제조된 섀도우 마스크
KR101674506B1 (ko) *	2015-08-10	2016-11-10	에이피시스템 주식회사	복합 가공 방법을 이용한 섀도우 마스크의 제조방법 및 이에 의해 제조된 섀도우 마스크
JP2017150017A (ja) *	2016-02-23	2017-08-31	株式会社ジャパンディスプレイ	蒸着マスクの製造方法及び有機ｅｌディスプレイの製造方法
KR102180070B1 (ko)	2017-10-31	2020-11-17	엘지디스플레이 주식회사	초미세 패턴 증착장치, 이를 이용한 초미세 패턴 증착방법 그리고 초미세 패턴 증착방법에 의해 제작된 전계발광표시장치
KR102180071B1 (ko) *	2017-10-31	2020-11-17	엘지디스플레이 주식회사	초미세 패턴 증착장치, 이를 이용한 초미세 패턴 증착방법 그리고 초미세 패턴 증착방법에 의해 제작된 전계발광표시장치
US10886452B2 (en) *	2018-01-25	2021-01-05	United States Of America As Represented By The Administrator Of Nasa	Selective and direct deposition technique for streamlined CMOS processing
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1998
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1999
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- 1999-10-21 TW TW088118356A patent/TW445301B/zh not_active IP Right Cessation
- 1999-10-22 KR KR1019990046143A patent/KR100341154B1/ko active IP Right Grant
2002
- 2002-05-08 US US10/141,129 patent/US6664183B2/en not_active Expired - Lifetime
- 2002-05-09 US US10/142,416 patent/US6627097B2/en not_active Expired - Lifetime

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Publication number	Publication date
US20020135287A1 (en)	2002-09-26
US20020125824A1 (en)	2002-09-12
US6627097B2 (en)	2003-09-30
KR20000029265A (ko)	2000-05-25
KR100341154B1 (ko)	2002-06-20
JP3024641B1 (ja)	2000-03-21
JP2000133443A (ja)	2000-05-12
US6664183B2 (en)	2003-12-16
US6459193B1 (en)	2002-10-01

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2020-04-11	MM4A	Annulment or lapse of patent due to non-payment of fees

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