TW422397U - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW422397U
TW422397U TW088200986U TW88200986U TW422397U TW 422397 U TW422397 U TW 422397U TW 088200986 U TW088200986 U TW 088200986U TW 88200986 U TW88200986 U TW 88200986U TW 422397 U TW422397 U TW 422397U
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
TW088200986U
Other languages
English (en)
Inventor
Yasunobu Nakase
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW422397U publication Critical patent/TW422397U/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
TW088200986U 1995-10-24 1996-01-24 Semiconductor memory device TW422397U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7275245A JPH09120682A (ja) 1995-10-24 1995-10-24 半導体メモリ装置

Publications (1)

Publication Number Publication Date
TW422397U true TW422397U (en) 2001-02-11

Family

ID=17552726

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088200986U TW422397U (en) 1995-10-24 1996-01-24 Semiconductor memory device

Country Status (5)

Country Link
US (1) US5621693A (zh)
JP (1) JPH09120682A (zh)
KR (1) KR100190839B1 (zh)
CN (1) CN1092386C (zh)
TW (1) TW422397U (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09288888A (ja) * 1996-04-22 1997-11-04 Mitsubishi Electric Corp 半導体記憶装置
US5831896A (en) * 1996-12-17 1998-11-03 International Business Machines Corporation Memory cell
JPH10188571A (ja) * 1996-12-25 1998-07-21 Toshiba Corp 半導体メモリ回路装置及び半導体メモリセルの書き込み方法
JP3085455B2 (ja) * 1997-06-25 2000-09-11 日本電気株式会社 スタティックｒａｍ
EP0920025B1 (en) 1997-11-28 2004-02-11 STMicroelectronics S.r.l. A low power RAM memory cell
JPH11306758A (ja) * 1998-04-27 1999-11-05 Matsushita Electric Ind Co Ltd 半導体記憶装置
US6560139B2 (en) * 2001-03-05 2003-05-06 Intel Corporation Low leakage current SRAM array
US7286383B1 (en) * 2002-08-10 2007-10-23 National Semiconductor Corporation Bit line sharing and word line load reduction for low AC power SRAM architecture
EP1398793B1 (fr) * 2002-09-06 2014-05-21 CSEM Centre Suisse d'Electronique et de Microtechnique S.A. - Recherche et Développement Circuit intégré numérique réalisé en technologie MOS
KR100434515B1 (ko) * 2002-09-17 2004-06-05 삼성전자주식회사 전류감지 회로용 능동 부하 회로를 구비하는 반도체메모리장치
JP2004362695A (ja) * 2003-06-05 2004-12-24 Renesas Technology Corp 半導体記憶装置
JP4330516B2 (ja) * 2004-08-04 2009-09-16 パナソニック株式会社 半導体記憶装置
JP4553185B2 (ja) 2004-09-15 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7394681B1 (en) * 2005-11-14 2008-07-01 Transmeta Corporation Column select multiplexer circuit for a domino random access memory array
JP5114894B2 (ja) * 2006-08-31 2013-01-09 富士通セミコンダクター株式会社 半導体記憶装置の試験方法及びその半導体記憶装置
EP2020658B1 (en) * 2007-06-29 2014-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
US7570537B2 (en) * 2007-07-12 2009-08-04 Sun Microsystems, Inc. Memory cells with power switch circuit for improved low voltage operation
WO2010013449A1 (ja) * 2008-08-01 2010-02-04 パナソニック株式会社 半導体記憶装置
CN108735258B (zh) * 2017-04-24 2020-10-09 中芯国际集成电路制造(上海)有限公司 地址译码器电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231996A (ja) * 1984-04-28 1985-11-18 Mitsubishi Electric Corp 半導体記憶装置
JP2667946B2 (ja) * 1992-09-21 1997-10-27 三菱電機株式会社 半導体記憶装置
JPH087573A (ja) * 1994-06-14 1996-01-12 Mitsubishi Electric Corp 半導体記憶装置と、そのデータの読出および書込方法

Also Published As

Publication number Publication date
US5621693A (en) 1997-04-15
CN1092386C (zh) 2002-10-09
KR970023395A (ko) 1997-05-30
JPH09120682A (ja) 1997-05-06
CN1148720A (zh) 1997-04-30
KR100190839B1 (ko) 1999-06-01

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004