TW355844B - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
TW355844B
TW355844B TW086114962A TW86114962A TW355844B TW 355844 B TW355844 B TW 355844B TW 086114962 A TW086114962 A TW 086114962A TW 86114962 A TW86114962 A TW 86114962A TW 355844 B TW355844 B TW 355844B
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
erase
transistors
Prior art date
Application number
TW086114962A
Other languages
English (en)
Inventor
Masaru Nawaki
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Application granted granted Critical
Publication of TW355844B publication Critical patent/TW355844B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/24—Nonvolatile memory in which programming can be carried out in one memory bank or array whilst a word or sector in another bank or array is being erased simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
TW086114962A 1996-11-14 1997-10-13 Non-volatile semiconductor memory device TW355844B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30226996A JPH10144086A (ja) 1996-11-14 1996-11-14 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
TW355844B true TW355844B (en) 1999-04-11

Family

ID=17906986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086114962A TW355844B (en) 1996-11-14 1997-10-13 Non-volatile semiconductor memory device

Country Status (6)

Country Link
US (1) US6081450A (zh)
EP (1) EP0843316B1 (zh)
JP (1) JPH10144086A (zh)
KR (1) KR100287131B1 (zh)
DE (1) DE69726698T2 (zh)
TW (1) TW355844B (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940513B2 (ja) 1999-01-11 2007-07-04 株式会社東芝 半導体記憶装置
KR100560634B1 (ko) * 1999-01-13 2006-03-16 삼성전자주식회사 불휘발성 반도체 메모리 장치
EP1052646B1 (en) 1999-05-11 2004-07-14 Fujitsu Limited Non-volatile semiconductor memory device permitting data-read operation performed during data-write/erase operation
US6163478A (en) * 1999-10-19 2000-12-19 Advanced Micro Devices, Inc. Common flash interface implementation for a simultaneous operation flash memory device
US6240040B1 (en) * 2000-03-15 2001-05-29 Advanced Micro Devices, Inc. Multiple bank simultaneous operation for a flash memory
JP2001283594A (ja) 2000-03-29 2001-10-12 Sharp Corp 不揮発性半導体記憶装置
US6851026B1 (en) * 2000-07-28 2005-02-01 Micron Technology, Inc. Synchronous flash memory with concurrent write and read operation
KR100368590B1 (ko) * 2000-04-17 2003-01-24 삼성전자 주식회사 비등분할 메모리 블록을 가진 반도체 메모리 장치
JP3871184B2 (ja) 2000-06-12 2007-01-24 シャープ株式会社 半導体記憶装置
US6594194B2 (en) * 2001-07-11 2003-07-15 Sun Microsystems, Inc. Memory array with common word line
US7184307B2 (en) * 2001-08-28 2007-02-27 Samsung Electronics Co., Ltd. Flash memory device capable of preventing program disturbance according to partial programming
US6741502B1 (en) * 2001-09-17 2004-05-25 Sandisk Corporation Background operation for memory cells
US7177197B2 (en) 2001-09-17 2007-02-13 Sandisk Corporation Latched programming of memory and method
US20050185465A1 (en) * 2003-03-11 2005-08-25 Fujitsu Limited Memory device
JP2005116119A (ja) 2003-10-10 2005-04-28 Toshiba Corp 不揮発性半導体記憶装置
US7058754B2 (en) * 2003-12-22 2006-06-06 Silicon Storage Technology, Inc. Nonvolatile memory device capable of simultaneous erase and program of different blocks
US7092288B2 (en) * 2004-02-04 2006-08-15 Atmel Corporation Non-volatile memory array with simultaneous write and erase feature
KR100610006B1 (ko) * 2004-05-04 2006-08-08 삼성전자주식회사 호스트 시스템의 다중동작 지원에 적합한 메모리 구조를갖는 반도체 메모리 장치
EP1727153B1 (en) * 2005-05-25 2008-10-15 STMicroelectronics S.r.l. Discharge circuit for a word-erasable flash memory device
JP2007128633A (ja) * 2005-10-07 2007-05-24 Matsushita Electric Ind Co Ltd 半導体記憶装置及びこれを備えた送受信システム
JP2007157331A (ja) * 2007-03-16 2007-06-21 Ricoh Co Ltd 複合化フラッシュメモリ及びそれを搭載した携帯用機器
US8508998B2 (en) 2009-02-09 2013-08-13 Rambus Inc. Multiple plane, non-volatile memory with synchronized control
US9082515B2 (en) 2011-05-24 2015-07-14 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory device and driving method of variable resistance nonvolatile memory device
WO2012164926A1 (ja) 2011-05-31 2012-12-06 パナソニック株式会社 抵抗変化型不揮発性記憶装置
KR102586179B1 (ko) * 2018-10-04 2023-10-10 에스케이하이닉스 주식회사 반도체 장치
CN112634955A (zh) * 2019-09-24 2021-04-09 长鑫存储技术有限公司 Dram存储器
JP2023141465A (ja) * 2022-03-24 2023-10-05 キオクシア株式会社 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5448517A (en) * 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US5119340A (en) * 1990-09-26 1992-06-02 Sgs-Thomson Microelectronics, Inc. Semiconductor memory having latched repeaters for memory row line selection
JP3143161B2 (ja) * 1991-08-29 2001-03-07 三菱電機株式会社 不揮発性半導体メモリ
US5621690A (en) * 1995-04-28 1997-04-15 Intel Corporation Nonvolatile memory blocking architecture and redundancy
EP0741415A1 (en) * 1995-05-05 1996-11-06 STMicroelectronics S.r.l. Flash-EEPROM memory with contactless memory cells

Also Published As

Publication number Publication date
KR100287131B1 (ko) 2001-04-16
US6081450A (en) 2000-06-27
EP0843316A3 (en) 1999-05-19
DE69726698D1 (de) 2004-01-22
EP0843316A2 (en) 1998-05-20
KR19980042858A (ko) 1998-08-17
EP0843316B1 (en) 2003-12-10
JPH10144086A (ja) 1998-05-29
DE69726698T2 (de) 2004-10-07

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees