TW306016B - - Google Patents
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- Publication number
- TW306016B TW306016B TW085103125A TW85103125A TW306016B TW 306016 B TW306016 B TW 306016B TW 085103125 A TW085103125 A TW 085103125A TW 85103125 A TW85103125 A TW 85103125A TW 306016 B TW306016 B TW 306016B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- buffer layer
- light
- substrate
- gap
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 74
- 239000013078 crystal Substances 0.000 claims description 27
- 230000007423 decrease Effects 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims 1
- 238000012856 packing Methods 0.000 claims 1
- 230000035939 shock Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 17
- 239000000155 melt Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000979 retarding effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 102100024650 Carbonic anhydrase 3 Human genes 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- 101000760630 Homo sapiens Carbonic anhydrase 3 Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010041349 Somnolence Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000033558 biomineral tissue development Effects 0.000 description 1
- 230000037396 body weight Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 235000013330 chicken meat Nutrition 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5913195A JP3624451B2 (ja) | 1995-03-17 | 1995-03-17 | 発光素子用GaPエピタキシャル基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW306016B true TW306016B (de) | 1997-05-21 |
Family
ID=13104459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085103125A TW306016B (de) | 1995-03-17 | 1996-03-15 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5895706A (de) |
JP (1) | JP3624451B2 (de) |
DE (1) | DE19539364C2 (de) |
TW (1) | TW306016B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3786544B2 (ja) * | 1999-06-10 | 2006-06-14 | パイオニア株式会社 | 窒化物半導体素子の製造方法及びかかる方法により製造された素子 |
US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
US7799600B2 (en) * | 2007-05-31 | 2010-09-21 | Chien-Min Sung | Doped diamond LED devices and associated methods |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6028800B2 (ja) * | 1977-10-17 | 1985-07-06 | 住友電気工業株式会社 | 低欠陥密度りん化ガリウム単結晶 |
US4562378A (en) * | 1982-07-08 | 1985-12-31 | Sanyo Electric Co., Ltd. | Gallium phosphide light-emitting diode |
JPS5922374A (ja) * | 1982-07-28 | 1984-02-04 | Matsushita Electric Ind Co Ltd | 緑色発光ダイオ−ドの製造方法 |
JPH0732269B2 (ja) * | 1985-10-11 | 1995-04-10 | オムロン株式会社 | 半導体発光素子 |
WO1989008158A1 (en) * | 1988-02-24 | 1989-09-08 | Nippon Mining Co., Ltd. | Single crystal of compound semiconductor, process for its production and semiconductor device manufactured by using same |
FR2631621B1 (fr) * | 1988-05-19 | 1990-09-07 | Inst Francais Du Petrole | Nouvelles zeolithes de type structural ton, leur preparation et leur utilisation |
JPH0220077A (ja) * | 1988-07-08 | 1990-01-23 | Toshiba Corp | 緑色発光ダイオードの製造方法 |
JP3114809B2 (ja) * | 1989-05-31 | 2000-12-04 | 富士通株式会社 | 半導体装置 |
JPH03209883A (ja) * | 1990-01-12 | 1991-09-12 | Sharp Corp | リン化ガリウム緑色発光素子 |
JP2719870B2 (ja) * | 1992-09-30 | 1998-02-25 | 信越半導体株式会社 | GaP系発光素子基板及びその製造方法 |
JP2817577B2 (ja) * | 1993-05-31 | 1998-10-30 | 信越半導体株式会社 | GaP純緑色発光素子基板 |
JP3324102B2 (ja) * | 1993-11-22 | 2002-09-17 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
-
1995
- 1995-03-17 JP JP5913195A patent/JP3624451B2/ja not_active Expired - Lifetime
- 1995-10-23 DE DE19539364A patent/DE19539364C2/de not_active Expired - Fee Related
-
1996
- 1996-03-15 TW TW085103125A patent/TW306016B/zh not_active IP Right Cessation
-
1997
- 1997-04-17 US US08/843,961 patent/US5895706A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE19539364A1 (de) | 1996-09-26 |
JP3624451B2 (ja) | 2005-03-02 |
JPH08255925A (ja) | 1996-10-01 |
US5895706A (en) | 1999-04-20 |
DE19539364C2 (de) | 1999-04-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |