TW290689B - - Google Patents
Info
- Publication number
- TW290689B TW290689B TW085101737A TW85101737A TW290689B TW 290689 B TW290689 B TW 290689B TW 085101737 A TW085101737 A TW 085101737A TW 85101737 A TW85101737 A TW 85101737A TW 290689 B TW290689 B TW 290689B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03857695A JP3739104B2 (ja) | 1995-02-27 | 1995-02-27 | 不揮発性半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW290689B true TW290689B (zh) | 1996-11-11 |
Family
ID=12529121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085101737A TW290689B (zh) | 1995-02-27 | 1996-02-12 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5892713A (zh) |
JP (1) | JP3739104B2 (zh) |
KR (1) | KR100387970B1 (zh) |
TW (1) | TW290689B (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL96808A (en) * | 1990-04-18 | 1996-03-31 | Rambus Inc | Introductory / Origin Circuit Agreed Using High-Performance Brokerage |
US6728161B1 (en) * | 2000-06-30 | 2004-04-27 | Micron Technology, Inc. | Zero latency-zero bus turnaround synchronous flash memory |
KR100382614B1 (ko) * | 2000-12-29 | 2003-05-09 | 주식회사 하이닉스반도체 | 저전력의 메모리 코아 제어 장치 |
US6556481B1 (en) | 2001-02-21 | 2003-04-29 | Aplus Flash Technology, Inc. | 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell |
US6620682B1 (en) | 2001-02-27 | 2003-09-16 | Aplus Flash Technology, Inc. | Set of three level concurrent word line bias conditions for a nor type flash memory array |
TW563879U (en) * | 2001-11-02 | 2003-11-21 | Holtek Semiconductor Inc | Read only memory unit layout of double read path mask type |
US6862223B1 (en) * | 2002-07-05 | 2005-03-01 | Aplus Flash Technology, Inc. | Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout |
JP2004253115A (ja) * | 2003-01-30 | 2004-09-09 | Sharp Corp | 半導体記憶装置 |
JP4196743B2 (ja) * | 2003-06-12 | 2008-12-17 | 沖電気工業株式会社 | 半導体記憶装置 |
KR100526882B1 (ko) * | 2003-07-10 | 2005-11-09 | 삼성전자주식회사 | 멀티 블록 구조를 갖는 반도체 메모리 장치에서의리던던시 회로 |
JP2005056448A (ja) * | 2003-08-01 | 2005-03-03 | Toshiba Corp | 半導体記憶装置 |
JP3872062B2 (ja) * | 2004-02-10 | 2007-01-24 | シャープ株式会社 | 半導体記憶装置 |
KR100684876B1 (ko) * | 2005-01-03 | 2007-02-20 | 삼성전자주식회사 | 독출 시간을 단축시킬 수 있는 플래시 메모리 장치 및 방법 |
US7224610B1 (en) | 2006-01-03 | 2007-05-29 | Atmel Corporation | Layout reduction by sharing a column latch per two bit lines |
JP2007200512A (ja) | 2006-01-30 | 2007-08-09 | Renesas Technology Corp | 半導体記憶装置 |
US7742351B2 (en) * | 2006-06-30 | 2010-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
CN101740125B (zh) * | 2006-09-30 | 2013-04-17 | 莫塞德技术公司 | Nand型快闪存储器的读写方法及其相关页缓冲区 |
KR100865818B1 (ko) * | 2007-02-14 | 2008-10-28 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치 |
JP5239939B2 (ja) * | 2009-02-25 | 2013-07-17 | 凸版印刷株式会社 | 半導体メモリ |
US8995195B2 (en) * | 2013-02-12 | 2015-03-31 | Sandisk Technologies Inc. | Fast-reading NAND flash memory |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02156497A (ja) * | 1988-12-07 | 1990-06-15 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH03176891A (ja) * | 1989-12-04 | 1991-07-31 | Nec Corp | 半導体記憶装置 |
JP2742719B2 (ja) * | 1990-02-16 | 1998-04-22 | 三菱電機株式会社 | 半導体記憶装置 |
KR940008296B1 (ko) * | 1991-06-19 | 1994-09-10 | 삼성전자 주식회사 | 고속 센싱동작을 수행하는 센스앰프 |
JPH05274879A (ja) * | 1992-03-26 | 1993-10-22 | Nec Corp | 半導体装置 |
US5280447A (en) * | 1992-06-19 | 1994-01-18 | Intel Corporation | Floating gate nonvolatile memory with configurable erasure blocks |
JP3373632B2 (ja) * | 1993-03-31 | 2003-02-04 | 株式会社東芝 | 不揮発性半導体記憶装置 |
-
1995
- 1995-02-27 JP JP03857695A patent/JP3739104B2/ja not_active Expired - Fee Related
-
1996
- 1996-02-12 TW TW085101737A patent/TW290689B/zh not_active IP Right Cessation
- 1996-02-23 US US08/604,748 patent/US5892713A/en not_active Expired - Lifetime
- 1996-02-26 KR KR1019960004584A patent/KR100387970B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH08235878A (ja) | 1996-09-13 |
JP3739104B2 (ja) | 2006-01-25 |
KR100387970B1 (ko) | 2003-09-26 |
KR960032497A (ko) | 1996-09-17 |
US5892713A (en) | 1999-04-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |