TW277143B - - Google Patents

Info

Publication number
TW277143B
TW277143B TW084103102A TW84103102A TW277143B TW 277143 B TW277143 B TW 277143B TW 084103102 A TW084103102 A TW 084103102A TW 84103102 A TW84103102 A TW 84103102A TW 277143 B TW277143 B TW 277143B
Authority
TW
Taiwan
Application number
TW084103102A
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Application granted granted Critical
Publication of TW277143B publication Critical patent/TW277143B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
TW084103102A 1994-05-18 1995-03-31 TW277143B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/245,592 US5571373A (en) 1994-05-18 1994-05-18 Method of rough polishing semiconductor wafers to reduce surface roughness

Publications (1)

Publication Number Publication Date
TW277143B true TW277143B (zh) 1996-06-01

Family

ID=22927312

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084103102A TW277143B (zh) 1994-05-18 1995-03-31

Country Status (7)

Country Link
US (1) US5571373A (zh)
EP (1) EP0684634A3 (zh)
JP (1) JP3004891B2 (zh)
KR (1) KR100186259B1 (zh)
CN (1) CN1048118C (zh)
MY (1) MY130639A (zh)
TW (1) TW277143B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8183670B2 (en) 2002-12-02 2012-05-22 Foundation For Advancement Of International Science Semiconductor device and method of manufacturing the same
TWI693123B (zh) * 2018-05-22 2020-05-11 日商Ｓｕｍｃｏ股份有限公司 工件的兩面研磨裝置及兩面研磨方法

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JP2000315665A (ja) 1999-04-29 2000-11-14 Ebara Corp 研磨方法及び装置
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US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
CN1272222A (zh) * 1997-08-21 2000-11-01 Memc电子材料有限公司 处理半导体晶片的方法
US6149696A (en) * 1997-11-06 2000-11-21 Komag, Inc. Colloidal silica slurry for NiP plated disk polishing
US5948699A (en) * 1997-11-21 1999-09-07 Sibond, L.L.C. Wafer backing insert for free mount semiconductor polishing apparatus and process
US6019806A (en) * 1998-01-08 2000-02-01 Sees; Jennifer A. High selectivity slurry for shallow trench isolation processing
JPH11260769A (ja) * 1998-03-10 1999-09-24 Komatsu Electronic Metals Co Ltd 半導体ウェハの研磨クロスの評価方法およびそれを用いた製造方法
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
US6162368A (en) * 1998-06-13 2000-12-19 Applied Materials, Inc. Technique for chemical mechanical polishing silicon
US6863593B1 (en) 1998-11-02 2005-03-08 Applied Materials, Inc. Chemical mechanical polishing a substrate having a filler layer and a stop layer
US6214704B1 (en) 1998-12-16 2001-04-10 Memc Electronic Materials, Inc. Method of processing semiconductor wafers to build in back surface damage
JP4257687B2 (ja) * 1999-01-11 2009-04-22 株式会社トクヤマ 研磨剤および研磨方法
US6358128B1 (en) 1999-03-05 2002-03-19 Ebara Corporation Polishing apparatus
US6354922B1 (en) 1999-08-20 2002-03-12 Ebara Corporation Polishing apparatus
US6589872B1 (en) * 1999-05-03 2003-07-08 Taiwan Semiconductor Manufacturing Company Use of low-high slurry flow to eliminate copper line damages
US6227949B1 (en) * 1999-06-03 2001-05-08 Promos Technologies, Inc. Two-slurry CMP polishing with different particle size abrasives
JP3097913B1 (ja) 1999-07-01 2000-10-10 日本ミクロコーティング株式会社 ガラス基板の鏡面仕上げ方法
DE19938340C1 (de) * 1999-08-13 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
JP2001068477A (ja) * 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
DE19949578C2 (de) * 1999-10-14 2003-04-30 Wacker Siltronic Halbleitermat Verfahren zur Kontrolle einer Oberflächenbearbeitung
DE19958077A1 (de) * 1999-12-02 2001-06-13 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Politur von Halbleiterscheiben
DE19960823B4 (de) 1999-12-16 2007-04-12 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung
US6189546B1 (en) 1999-12-29 2001-02-20 Memc Electronic Materials, Inc. Polishing process for manufacturing dopant-striation-free polished silicon wafers
DE10004578C1 (de) * 2000-02-03 2001-07-26 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante
US6479386B1 (en) 2000-02-16 2002-11-12 Memc Electronic Materials, Inc. Process for reducing surface variations for polished wafer
KR20020001839A (ko) * 2000-02-23 2002-01-09 와다 다다시 웨이퍼 외주 챔퍼부의 연마방법 및 연마장치
DE10012840C2 (de) * 2000-03-16 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von polierten Halbleiterscheiben
US6729941B2 (en) 2000-04-12 2004-05-04 Shin-Etsu Handotai & Co., Ltd. Process for manufacturing semiconductor wafer and semiconductor wafer
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DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
US6361407B1 (en) * 2000-08-02 2002-03-26 Memc Electronic Materials, Inc. Method of polishing a semiconductor wafer
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US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
JP2002261058A (ja) * 2001-03-06 2002-09-13 Sumitomo Electric Ind Ltd 化合物半導体ウエハの製造方法
JP3530158B2 (ja) * 2001-08-21 2004-05-24 沖電気工業株式会社 半導体装置及びその製造方法
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
WO2003105206A1 (en) 2002-06-10 2003-12-18 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
FR2842755B1 (fr) * 2002-07-23 2005-02-18 Soitec Silicon On Insulator Rincage au moyen d'une solution de tensioactif apres planarisation mecano-chimique d'une tranche
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
JP4234991B2 (ja) * 2002-12-26 2009-03-04 Ｈｏｙａ株式会社 情報記録媒体用ガラス基板の製造方法及びその製造方法によって製造される情報記録媒体用ガラス基板
KR100728173B1 (ko) 2003-03-07 2007-06-13 앰버웨이브 시스템즈 코포레이션 쉘로우 트렌치 분리법
DE60336687D1 (de) * 2003-12-03 2011-05-19 Soitec Silicon On Insulator Prozess zum verbessern der oberflächenrauigkeit eines halbleiterwafers
JP3950868B2 (ja) * 2004-04-28 2007-08-01 エルピーダメモリ株式会社 半導体装置及びその製造方法
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US20060138681A1 (en) * 2004-12-27 2006-06-29 Asml Netherlands B.V. Substrate and lithography process using the same
JP4524643B2 (ja) * 2005-05-18 2010-08-18 株式会社Ｓｕｍｃｏ ウェーハ研磨方法
JP5060755B2 (ja) 2006-09-29 2012-10-31 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェハの粗研磨方法、及び半導体ウェハの研磨装置
JP5568837B2 (ja) * 2008-02-29 2014-08-13 株式会社Ｓｕｍｃｏ シリコン基板の製造方法
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8330245B2 (en) * 2010-02-25 2012-12-11 Memc Electronic Materials, Inc. Semiconductor wafers with reduced roll-off and bonded and unbonded SOI structures produced from same
US9156705B2 (en) 2010-12-23 2015-10-13 Sunedison, Inc. Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
CN103537974B (zh) * 2012-07-11 2016-09-14 永嘉县迈利达钮扣研发中心有限公司 不饱和树脂纽扣的抛光工艺
CN103042463A (zh) * 2013-01-22 2013-04-17 万向硅峰电子股份有限公司 一种ic级重掺砷硅抛光片表面粗糙度的控制方法
DE102013205448A1 (de) 2013-03-27 2014-10-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
JP2014216464A (ja) 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
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CN103847032B (zh) * 2014-03-20 2016-01-06 德清晶辉光电科技有限公司 一种大直径超薄石英晶片的生产工艺
JP6259723B2 (ja) * 2014-06-18 2018-01-10 株式会社フジミインコーポレーテッド シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット
CN104175211B (zh) * 2014-08-20 2016-08-24 上海华力微电子有限公司 一种防止化学机械研磨时微观刮伤的研磨方法
KR101734390B1 (ko) * 2015-05-06 2017-05-24 삼일이엔지 주식회사 시인성이 향상된 에너지 절약형 간판
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CN109648451B (zh) * 2018-12-29 2020-12-01 徐州鑫晶半导体科技有限公司 硅晶圆的最终抛光方法和最终抛光装置
CN112454017A (zh) * 2020-11-25 2021-03-09 西安奕斯伟硅片技术有限公司 硅片抛光方法和硅片抛光设备
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8183670B2 (en) 2002-12-02 2012-05-22 Foundation For Advancement Of International Science Semiconductor device and method of manufacturing the same
TWI693123B (zh) * 2018-05-22 2020-05-11 日商Ｓｕｍｃｏ股份有限公司 工件的兩面研磨裝置及兩面研磨方法

Also Published As

Publication number Publication date
MY130639A (en) 2007-07-31
JPH07314324A (ja) 1995-12-05
EP0684634A3 (en) 1998-11-11
CN1048118C (zh) 2000-01-05
KR950034571A (ko) 1995-12-28
EP0684634A2 (en) 1995-11-29
JP3004891B2 (ja) 2000-01-31
CN1117203A (zh) 1996-02-21
US5571373A (en) 1996-11-05
KR100186259B1 (ko) 1999-04-15

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