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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW82111161ApriorityCriticalpatent/TW259889B/en
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Publication of TW259889BpublicationCriticalpatent/TW259889B/en
An process of electric device isolation, that is suitable for fabricatingelectric device on one N+ substrate, includes: (1) epitaxizing one first N- epitaxy layer on N+ substrate; (2) implanting P-type dopant on N+ epitaxy to form P- implanted area and P+ implanted area; (3) epitaxizing one second N- epitaxy layer on P- implanted area and P+ implanted area, and simultaneously making P- implanted area and P+ implanted area form P-type isolation bottom and P+ isolation sidewall independently, then form isolation for fabricating the above electric device; It features that: (1) opening contact trench on the second N- epitaxy layer, and the bottom of contact trench is deep to the above P- isolatioin sidewall; (2) implementing metallization to form metal contact with the above P+ isolation sidewall through the above contact trench.
TW82111161A1993-12-291993-12-29Process of electric device isolation
TW259889B
(en)