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Priority to TW085100933ApriorityCriticalpatent/TW346650B/en
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Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
A source/drain implanted buffer oxide layer with improved hot carrier reliability, which comprises: defining and forming a gate on a silicon substrate; applying a lightly doped ion implantation thereby forming a component lightly doped region; depositing/etching back an insulative material thereby forming a side wall layer attached to the gate; globally depositing a thin oxide layer covering the surface of the component; and applying a high concentration ion implantation thereby forming a component source/drain region; using the covering thin oxide layer as a buffer material layer for the following ion implantation thereby reducing the depth of the formed region and the extent of inward lateral diffusion.
TW085100933A1996-01-261996-01-26Source/drain implanted buffer oxide layer with improved hot carrier reliability
TW346650B
(en)
A method for introducing an impurity dopant into SiC, a semiconductor device formed by the method and using a highly doped amorphous layer as a source for dopant diffusion into SiC