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Priority to TW82110099ApriorityCriticalpatent/TW260818B/en
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Publication of TW260818BpublicationCriticalpatent/TW260818B/en
Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
An auto-planarization process of metal oxide semiconductor includes: (1) forming field oxide layer on Si substrate; (2) forming one shallow trench by etching between field oxide layer on Si substrate; (3) depositing gate oxide layer and polysilicon separately on shallow trench; (4) etching polysilicon to same height with Si substrate bottom and to present planarization; (5) implanting P or N ion on polysilicon sides to form source/drain electrode; With the above process constituting metal oxide semiconductor with auto-planarization effect.
TW82110099A1993-11-301993-11-30Auto-planarization process of metal oxide semiconductor
TW260818B
(en)