TW263603B - Process of producing low temperature shallow junction by using silicide - Google Patents
Process of producing low temperature shallow junction by using silicideInfo
- Publication number
- TW263603B TW263603B TW83112106A TW83112106A TW263603B TW 263603 B TW263603 B TW 263603B TW 83112106 A TW83112106 A TW 83112106A TW 83112106 A TW83112106 A TW 83112106A TW 263603 B TW263603 B TW 263603B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicide
- silicon material
- shallow junction
- low temperature
- material layer
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
A process of producing low temperature shallow junction by using silicide, which is applicable on conductive silicide substrate of first type on which a device area is formed on the silicide substrate; the process comprises: forming a silicon material layer on the substrate covering the device area; undergoing ion implantation to implant second type dopant into the silicon material layer; forming a metal layer on the silicon material layer; and undergoing an annealing process to allow the metal layer and the silicon material layer to react with each other and form a silicide, and pushing the second type dopant from the silicon material into the silicon substrate to form a second type implanted area of shallow junction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83112106A TW263603B (en) | 1994-12-23 | 1994-12-23 | Process of producing low temperature shallow junction by using silicide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83112106A TW263603B (en) | 1994-12-23 | 1994-12-23 | Process of producing low temperature shallow junction by using silicide |
Publications (1)
Publication Number | Publication Date |
---|---|
TW263603B true TW263603B (en) | 1995-11-21 |
Family
ID=51402042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW83112106A TW263603B (en) | 1994-12-23 | 1994-12-23 | Process of producing low temperature shallow junction by using silicide |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW263603B (en) |
-
1994
- 1994-12-23 TW TW83112106A patent/TW263603B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |