TW263603B - Process of producing low temperature shallow junction by using silicide - Google Patents

Process of producing low temperature shallow junction by using silicide

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Publication number
TW263603B
TW263603B TW83112106A TW83112106A TW263603B TW 263603 B TW263603 B TW 263603B TW 83112106 A TW83112106 A TW 83112106A TW 83112106 A TW83112106 A TW 83112106A TW 263603 B TW263603 B TW 263603B
Authority
TW
Taiwan
Prior art keywords
silicide
silicon material
shallow junction
low temperature
material layer
Prior art date
Application number
TW83112106A
Other languages
Chinese (zh)
Inventor
Huanq-Jong Jeng
Jeng-Tarng Lin
Ji-Horng Jaw
Original Assignee
Nat Science Committee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Science Committee filed Critical Nat Science Committee
Priority to TW83112106A priority Critical patent/TW263603B/en
Application granted granted Critical
Publication of TW263603B publication Critical patent/TW263603B/en

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Abstract

A process of producing low temperature shallow junction by using silicide, which is applicable on conductive silicide substrate of first type on which a device area is formed on the silicide substrate; the process comprises: forming a silicon material layer on the substrate covering the device area; undergoing ion implantation to implant second type dopant into the silicon material layer; forming a metal layer on the silicon material layer; and undergoing an annealing process to allow the metal layer and the silicon material layer to react with each other and form a silicide, and pushing the second type dopant from the silicon material into the silicon substrate to form a second type implanted area of shallow junction.
TW83112106A 1994-12-23 1994-12-23 Process of producing low temperature shallow junction by using silicide TW263603B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83112106A TW263603B (en) 1994-12-23 1994-12-23 Process of producing low temperature shallow junction by using silicide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83112106A TW263603B (en) 1994-12-23 1994-12-23 Process of producing low temperature shallow junction by using silicide

Publications (1)

Publication Number Publication Date
TW263603B true TW263603B (en) 1995-11-21

Family

ID=51402042

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83112106A TW263603B (en) 1994-12-23 1994-12-23 Process of producing low temperature shallow junction by using silicide

Country Status (1)

Country Link
TW (1) TW263603B (en)

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees