GB1494149A - Integrated circuits - Google Patents

Integrated circuits

Info

Publication number
GB1494149A
GB1494149A GB49938/75A GB4993875A GB1494149A GB 1494149 A GB1494149 A GB 1494149A GB 49938/75 A GB49938/75 A GB 49938/75A GB 4993875 A GB4993875 A GB 4993875A GB 1494149 A GB1494149 A GB 1494149A
Authority
GB
United Kingdom
Prior art keywords
zone
emitter
diffusing
impurity
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB49938/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1494149A publication Critical patent/GB1494149A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7327—Inverse vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1494149 Integrated circuits SIEMENS AG 5 Dec 1975 [19 Feb 1975] 49938/75 Heading H1K In an integrated circuit comprising an inversely operated transistor as shown in Fig. 2, of which the zone conductivity types may be reversed, the emitter zone consists essentially of a buried zone 3 and a similarly heavily doped zone 15 of the same conductivity type extending upwards through epitaxial layer 2 towards base zone 6. The structure shown, which is an I<SP>2</SP>L transistor, the base of which is fed with current by injector zone 8, may be formed by first implanting or diffusing a slow diffusing impurity, e.g. Sb or As, into an area 3 of P-type substrate 1, similarly introducing a faster diffusing impurity, e.g. As or P, or a higher concentration of the same impurity into area 15 within zone 3, then epitaxially depositing layer 2 and forming by diffusion or implantation first emitter connection zone 4, then base zone 6 and injector zone 8 and finally collector zone 7, the impurities in areas 3 and 15 diffusing further in these later steps to produce the pedestal emitter structure shown. The provision of zone 15 improves the emitter efficiency and reduces emitter capacitance.
GB49938/75A 1975-02-19 1975-12-05 Integrated circuits Expired GB1494149A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2507038A DE2507038C3 (en) 1975-02-19 1975-02-19 Inverse planar transistor and process for its manufacture

Publications (1)

Publication Number Publication Date
GB1494149A true GB1494149A (en) 1977-12-07

Family

ID=5939232

Family Applications (1)

Application Number Title Priority Date Filing Date
GB49938/75A Expired GB1494149A (en) 1975-02-19 1975-12-05 Integrated circuits

Country Status (5)

Country Link
JP (1) JPS51107779A (en)
DE (1) DE2507038C3 (en)
FR (1) FR2301925A1 (en)
GB (1) GB1494149A (en)
IT (1) IT1055197B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2532608C2 (en) * 1975-07-22 1982-09-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Planar diffusion process for manufacturing a monolithic integrated circuit
DE2554426C3 (en) * 1975-12-03 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for generating a locally high inverse current gain in a planar transistor and an inversely operated transistor produced according to this process
JPS5385182A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Iil type semiconductor device
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit
JPS564275A (en) * 1979-06-25 1981-01-17 Fujitsu Ltd Semiconductor device
JPS6031107B2 (en) * 1981-01-09 1985-07-20 株式会社日立製作所 Semiconductor integrated circuit device
JPS59158554A (en) * 1983-02-27 1984-09-08 Rohm Co Ltd Transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926752A (en) * 1972-07-06 1974-03-09
JPS5720711B2 (en) * 1974-07-09 1982-04-30
JPS5837699B2 (en) * 1974-12-16 1983-08-18 三菱電機株式会社 handmade takiokusouchi

Also Published As

Publication number Publication date
DE2507038A1 (en) 1976-09-02
IT1055197B (en) 1981-12-21
FR2301925B1 (en) 1982-03-19
JPS51107779A (en) 1976-09-24
DE2507038C3 (en) 1980-01-24
DE2507038B2 (en) 1979-05-23
FR2301925A1 (en) 1976-09-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee