TW225603B - - Google Patents

Info

Publication number: TW225603B
Authority: TW; Taiwan

Application number

TW080105355A

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-05-16

Filing date

1991-07-10

Publication date

1994-06-21

1991-07-10 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1994-06-21 Application granted granted Critical

1994-06-21 Publication of TW225603B publication Critical patent/TW225603B/zh

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Dram (AREA)
Read Only Memory (AREA)

TW080105355A 1991-05-16 1991-07-10 TW225603B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019910007979A KR920022293A (ko)	1991-05-16	1991-05-16	비정기적인 리프레쉬 동작을 실행하는 반도체 메모리 장치

Publications (1)

Publication Number	Publication Date
TW225603B true TW225603B (zh)	1994-06-21

Family

ID=19314543

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW080105355A TW225603B (zh)	1991-05-16	1991-07-10

Country Status (8)

Country	Link
US (1)	US5278797A (zh)
JP (1)	JPH04344387A (zh)
KR (1)	KR920022293A (zh)
DE (1)	DE4124904A1 (zh)
FR (1)	FR2676578A1 (zh)
GB (1)	GB2255844A (zh)
IT (1)	IT1250087B (zh)
TW (1)	TW225603B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH06281911A (ja) *	1992-12-18	1994-10-07	At & T Global Inf Solutions Internatl Inc	コンピューター用ビデオラム（ｖ−ｒａｍ）
CN1120373A (zh) *	1993-03-17	1996-04-10	蔡卡得公司	基于随机存储存贮器(ram)的可配置阵列
JPH07141865A (ja) *	1993-06-28	1995-06-02	Mitsubishi Electric Corp	発振回路および半導体記憶装置
US5392251A (en) *	1993-07-13	1995-02-21	Micron Semiconductor, Inc.	Controlling dynamic memory refresh cycle time
JP2836453B2 (ja) *	1993-08-26	1998-12-14	日本電気株式会社	半導体メモリの初段回路方式
JPH07182857A (ja) *	1993-12-24	1995-07-21	Toshiba Corp	マイコンシステム
TW301750B (zh) *	1995-02-08	1997-04-01	Matsushita Electric Ind Co Ltd
US5717644A (en) *	1996-10-09	1998-02-10	International Business Machines Corporation	Apparatus for varying the refresh rate for a DRAM in response to variation in operating voltages and method thereof
US5712825A (en) *	1996-10-09	1998-01-27	International Business Machines Corporation	Maintaining data integrity in DRAM while varying operating voltages
US5890198A (en) *	1996-10-22	1999-03-30	Micron Technology, Inc.	Intelligent refresh controller for dynamic memory devices
FR2775382B1 (fr) *	1998-02-25	2001-10-05	St Microelectronics Sa	Procede de controle du rafraichissement d'un plan memoire d'un dispositif de memoire vive dynamique, et dispositif de memoire vive correspondant
KR100524059B1 (ko) *	1998-10-01	2005-12-21	삼성전자주식회사	컴퓨터의 에스.티.알. 기능 지원장치
JP4392740B2 (ja) *	2001-08-30	2010-01-06	株式会社ルネサステクノロジ	半導体記憶回路
US6515929B1 (en) *	2001-10-29	2003-02-04	Etron Technology, Inc.	Partial refresh feature in pseudo SRAM
KR100481928B1 (ko) *	2002-07-04	2005-04-13	주식회사 하이닉스반도체	휘발성 메모리 소자의 리프래쉬 주기 제어 회로 및 이를이용한 리프래쉬 방법
US7474579B2 (en) *	2006-12-20	2009-01-06	Spansion Llc	Use of periodic refresh in medium retention memory arrays
KR101963457B1 (ko) *	2011-04-29	2019-03-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 기억 장치 및 그 구동 방법
KR20150138026A (ko)	2014-05-29	2015-12-09	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1774962C2 (de) *	1967-06-07	1974-02-28	Motorola Inc., Franklin Park, Ill. (V.St.A.)	Anordnung zur Speicherung von analogen Signalen. Ausscheidung-aus: 1763459
US3705392A (en) *	1971-09-07	1972-12-05	Texas Instruments Inc	Mos dynamic memory
US4547867A (en) *	1980-10-01	1985-10-15	Intel Corporation	Multiple bit dynamic random-access memory
JPS5956291A (ja) *	1982-09-24	1984-03-31	Hitachi Ltd	Ｍｏｓ記憶装置
JPS59227090A (ja) *	1983-06-06	1984-12-20	Hitachi Ltd	不揮発性メモリ装置
JPS6083293A (ja) *	1983-10-14	1985-05-11	Hitachi Micro Comput Eng Ltd	ダイナミツク型ｒａｍ
JPS60242586A (ja) *	1984-05-16	1985-12-02	Hitachi Micro Comput Eng Ltd	半導体集積回路装置
JPS6150287A (ja) *	1984-08-20	1986-03-12	Toshiba Corp	ダイナミツクメモリの自動リフレツシユ制御回路
JPS62154293A (ja) *	1985-12-26	1987-07-09	Casio Comput Co Ltd	半導体記憶装置
JPS63121197A (ja) *	1986-11-07	1988-05-25	Fujitsu Ltd	半導体記憶装置
JP2647527B2 (ja) *	1990-02-21	1997-08-27	シャープ株式会社	センス増幅回路

1991
- 1991-05-16 KR KR1019910007979A patent/KR920022293A/ko not_active IP Right Cessation
- 1991-07-05 US US07/726,182 patent/US5278797A/en not_active Expired - Fee Related
- 1991-07-10 TW TW080105355A patent/TW225603B/zh active
- 1991-07-26 FR FR9109512A patent/FR2676578A1/fr active Pending
- 1991-07-26 DE DE4124904A patent/DE4124904A1/de not_active Ceased
- 1991-08-29 IT ITRM910644A patent/IT1250087B/it active IP Right Grant
- 1991-08-29 JP JP3242318A patent/JPH04344387A/ja active Pending
- 1991-08-30 GB GB9118624A patent/GB2255844A/en not_active Withdrawn

Also Published As

Publication number	Publication date
DE4124904A1 (de)	1992-11-19
FR2676578A1 (fr)	1992-11-20
US5278797A (en)	1994-01-11
JPH04344387A (ja)	1992-11-30
IT1250087B (it)	1995-03-30
ITRM910644A1 (it)	1993-03-01
GB2255844A (en)	1992-11-18
ITRM910644A0 (it)	1991-08-29
GB9118624D0 (en)	1991-10-16
KR920022293A (ko)	1992-12-19

Publication	Publication Date	Title
FR2681164B1 (zh)	1997-02-21
FR2671931B1 (zh)	1997-02-21
FR2676147B1 (zh)	1995-05-19
FR2673017B1 (zh)	1995-03-17
FR2673252B1 (zh)	1995-02-03
TW225603B (zh)	1994-06-21
EP0525335A3 (zh)	1995-06-21
FR2678330B1 (zh)	1995-02-17
FR2675070B1 (zh)	1994-11-25
FR2681868B1 (zh)	1995-06-02
FR2678154B1 (zh)	1995-05-12
FR2672278B1 (zh)	1995-01-20
FR2674367B1 (zh)	1994-12-16
FR2682578B1 (zh)	1995-06-02
FR2680352B1 (zh)	1994-04-22
FR2676255B1 (zh)	1995-02-10
FR2675678B1 (zh)	1994-12-16
FR2672693B1 (zh)	1994-04-22
FR2674650B1 (zh)	1995-03-10
FR2684260B3 (zh)	1994-12-16
FR2681281B1 (zh)	1994-12-09
FR2679328B1 (zh)	1994-04-22
FR2675071B1 (zh)	1995-03-03
IN184494B (zh)	2000-08-26
EP0548689A3 (zh)	1994-04-20