TW202007742A - 晶圓加工方法 - Google Patents

晶圓加工方法 Download PDF

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TW202007742A
TW202007742A TW108125994A TW108125994A TW202007742A TW 202007742 A TW202007742 A TW 202007742A TW 108125994 A TW108125994 A TW 108125994A TW 108125994 A TW108125994 A TW 108125994A TW 202007742 A TW202007742 A TW 202007742A
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wafer
sheet
substrate
processing method
thermocompression bonding
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TWI787535B (zh
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原田成規
岡村卓
趙金艶
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日商迪思科股份有限公司
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Abstract

[課題]本發明提供一種晶圓加工方法，在將晶圓分割成一個個元件晶片之際，不會使元件之品質降低。[解決手段]一種晶圓加工方法，將有多個元件由互相交叉的多條分割預定線所劃分而形成於正面之晶圓分割成一個個元件晶片；該晶圓加工方法包含：晶圓配設步驟，在支撐晶圓之基板的上表面鋪設聚烯烴系片或是聚酯系片的任一種薄片，再將晶圓的背面定位並配設於薄片的上表面；薄片熱壓接合步驟，使透過薄片而配設於基板之晶圓在密閉環境內減壓，對薄片加熱並且推壓晶圓，以將晶圓透過薄片熱壓接合於基板；以及分割步驟，將切割刀片定位於晶圓的正面並對分割預定線進行切割，以將晶圓分割成一個個元件晶片。

Description

晶圓加工方法
本發明是關於一種晶圓加工方法，將有多個元件由互相交叉的多條分割預定線所劃分而形成於正面之晶圓分割成一個個元件晶片。
將有IC、LSI等多個元件由互相交叉的多條分割預定線所劃分而形成於正面之晶圓，藉由研削裝置研削背面並加工至預定的厚度之後，藉由切割裝置分割成一個個元件晶片，所分割出的元件晶片係應用於行動電話、個人電腦等電子設備。
在將晶圓分割成一個個元件晶片之際，藉由在晶圓的背面黏貼切割膠膜並且由具有容納晶圓之開口的環狀框架所支撐，即使將晶圓分割成一個個元件晶片，也可在維持晶圓形態之狀態下往下個步驟搬送（參照例如專利文獻1）。 [習知技術文獻] [專利文獻]
[專利文獻1]日本特開2010-050214號公報
[發明所欲解決的課題] 如上所述，藉由將晶圓分割成一個個元件晶片之際透過切割膠膜以環狀框架支撐，雖可將分割後的晶圓繼續維持在晶圓的形態往下個步驟搬送，但若實施以切割刀片切割晶圓的分割預定線之切割動作，則會有在黏貼於切割膠膜之背面側產生崩缺而使元件晶片之品質降低的問題存在。
上述問題被認為原因在於：由於切割膠膜表面所形成之黏著層相對較柔軟，所以在分割之際因元件晶片移動而與切割刀片發生異常接觸，或是因吸引保持晶圓之卡盤台的保持部是以具有通氣性的多孔陶瓷所形成，所以切割膠膜受到卡盤台的保持部所吸引，會使已分割之元件晶片外周部的保持力降低，而與切割刀片發生異常接觸。
上述問題被認為只要讓晶圓的背面由具剛性的基板（支撐板）所支撐來進行切割便可解決。可是，基板本身並不具有黏著性，所以必須透過諸如液狀樹脂、蠟、塗布有糊劑等之膠膜來與晶圓一體化。在此情形，產生了新的問題，即切割完成後自晶圓的背面上剝離基板之際，在一個個元件晶片上會殘留液狀樹脂、蠟、形成在膠膜上的糊劑等，使得元件晶片之品質降低。
所以，本發明之目的在於提供一種晶圓加工方法，在將晶圓分割成一個個元件晶片之際，不會使元件晶片之品質降低。
[解決課題的技術手段] 根據本發明，提供一種晶圓加工方法，將有多個元件由互相交叉的多條分割預定線所劃分而形成於正面之晶圓分割成一個個元件晶片；該晶圓加工方法具備：晶圓配設步驟，在支撐晶圓之基板的上表面鋪設聚烯烴系片或是聚酯系片的任一種薄片，再將晶圓的背面定位並配設於該薄片的上表面；薄片熱壓接合步驟，使透過該薄片而配設於該基板之晶圓在密閉環境內減壓，對該薄片加熱並且將晶圓往該薄片推壓，以將晶圓透過該薄片熱壓接合於該基板；分割步驟，在實施該薄片熱壓接合步驟之後，將切割刀片定位於晶圓的正面並對分割預定線進行切割，以將晶圓分割成一個個元件晶片；以及剝離步驟，在實施該分割步驟之後，將該薄片與該基板自晶圓的背面剝離。
較佳者為：該聚烯烴系之薄片，由聚乙烯片、聚丙烯片、聚苯乙烯片之任一者所構成。較佳者為：選擇聚烯烴系之薄片作為該薄片的情況下，該薄片熱壓接合步驟中的該薄片之加熱溫度，在該薄片由聚乙烯片所構成的情況下為120~140℃，在該薄片由聚丙烯片所構成的情況下為160~180℃，在該薄片由聚苯乙烯片所構成的情況下為220~240℃。
較佳者為：該聚酯系之薄片，由聚對苯二甲酸乙二酯片、聚對萘二甲酸乙二酯片之任一者所構成。較佳者為：選擇聚酯系之薄片作為該薄片的情況下，該薄片熱壓接合步驟中的該薄片之加熱溫度，在該薄片由聚對苯二甲酸乙二酯片所構成的情況下為250~270℃，在該薄片由聚對萘二甲酸乙二酯片所構成的情況下為160~180℃。
[發明功效] 根據本發明，晶圓被以充分的保持力相對於基板而保持，即使用切割刀片切割晶圓正面上所形成之分割預定線，亦可抑制在元件晶片之背面產生崩缺。另外，由於將晶圓透過薄片熱壓接合於基板，所以即使由切割刀片完成分割步驟並將基板自晶圓的背面剝離，也不會附著液狀樹脂、糊劑、蠟等，解決使元件品質降低的問題。
以下，針對依本發明所構成之晶圓加工方法的一實施形態，參照所附圖式並詳細說明之。
實施本實施形態的晶圓加工方法之際，首先，如圖1（a）所示，準備作為工件的晶圓10、薄片20及基板30。於晶圓10，多個元件12由互相交叉的多條分割預定線14所劃分而形成於正面10a。薄片20設定成與晶圓10相同之形狀；由聚烯烴系片或是聚酯系片所構成。在本實施形態中，選擇聚烯烴系之聚乙烯（PE）片作為薄片20。另外，基板30為與晶圓10及薄片20相同形狀，且相較於晶圓10、薄片20具有剛性之支撐板，以不受後述薄片熱壓接合步驟時的設定溫度影響之玻璃所形成。
（晶圓配設步驟） 準備好晶圓10、薄片20及基板30之後，如圖1（a）所示，令晶圓10的正面10a為上方，亦即，令背面10b朝向下方，透過薄片20配設在支撐台40的上表面40a所鋪設之基板30上（參照圖1（b））。支撐台40配設在基台50上，且支撐台40之上表面形成為平坦的。
（薄片熱壓接合步驟） 若上述晶圓配設步驟已實施，便實施圖2所示之薄片熱壓接合步驟。薄片熱壓接合步驟，係使透過薄片20配設於基板30之晶圓10在密閉環境內減壓，對薄片20加熱並且將晶圓10往薄片20推壓，來將晶圓10與薄片20熱壓接合之步驟。此外，支撐台40之內部內建有作為加熱手段的電熱器42及未圖示的溫度感測計。電熱器42及該溫度感測計係和未圖示的控制裝置及電源相連接，能將支撐台40調整到所求的溫度。以下進行具體說明。
為了實施薄片熱壓接合步驟，利用圖2（a）所示之熱壓接合裝置60。熱壓接合裝置60具備用以形成包含支撐台40之密閉環境的密閉罩構件62。此外，圖2係熱壓接合裝置60之局部側視圖，但為了方便說明內部之構成，僅顯示密閉罩構件62的剖面。密閉罩構件62係覆蓋基台50之整個上表面的箱型構件，由上壁62a及從上壁62a之外周端部垂下的側壁62b所構成，下方側是敞開的。上壁62a之中央形成有開口部62c，用以供推壓構件64的支撐軸64a貫穿並於上下方向進退。另外，為了在使支撐軸64a上下進退的同時，將密閉罩構件62之內部空間S和外部隔絕以成為密閉環境，在支撐支撐軸64a之外周的開口部62c形成密封構造62d。支撐軸64a之下端，配設有推壓板64b。推壓板64b為至少大於晶圓10的徑長，較佳為設定成略大於支撐台40之尺寸的圓盤形狀。密閉罩構件62之側壁62b的下端面，配設有遍及全周的彈性密封構件62e。另外，圖示雖省略，但在推壓構件64之上方，配設有用以使推壓構件64於上下方向進退之驅動手段。
若已將晶圓10與薄片20及基板30一起載置於支撐台40上，便如圖2（a）所示，使定位於基台50上之密閉罩構件62下降，載置於基台50上。此時，推壓板64b如圖2（b）所示，被提升至不和晶圓10之上表面接觸的上方位置。當密閉罩構件62載置於基台50上時，則側壁62b之下端面所配設的彈性密封構件62e會和基台50之上表面密接。基台50中在支撐台40之附近位置配設有吸引孔52；未圖示的吸引手段透過吸引孔52和由密閉罩構件62所形成之內部空間S相連接。
如圖2（b）所示，若已將密閉罩構件62載置於基台50上，令密閉罩構件62之內部空間S為密閉環境，則使該吸引手段運轉，透過吸引孔52吸引內部空間S之空氣，將包含晶圓10之區域減壓至接近真空狀態。與此同時，藉由使支撐台40所內建之電熱器42運轉，並由未圖示的溫度感測器來控制支撐台40之溫度，將構成薄片20之聚乙烯片加熱以達到熔點附近之溫度（120~140℃）。再者，加熱薄片20之同時，如圖2（c）所示，使推壓板64b下降並以均等的力推壓晶圓10之整個上表面。容納有晶圓10之內部空間S被減壓至接近真空狀態，晶圓10、薄片20及基板30之間所殘存的空氣經吸引而去除。接著，薄片20被加熱至上述溫度因而軟化並發揮黏著性，而晶圓10、薄片20及基板30經熱壓接合，如圖3所示形成一體化單元W。以上，薄片熱壓接合步驟完成。若像這樣薄片熱壓接合步驟已完成，則令未圖示的吸引手段及電熱器42停止，使推壓板64b上昇並且將密閉罩構件62往上方提升。若薄片20之溫度已降低至接近常溫，便可自支撐台40將一體化單元W搬出。
根據上述薄片熱壓接合步驟，於密閉環境內減壓之狀態下將薄片20加熱，並在薄片20已軟化之狀態下將晶圓10從上方推壓並使其密接，所以晶圓10無需透過液狀樹脂、糊劑、蠟等，而是透過薄片20被以充分的支撐力支撐於基板30。
（分割步驟） 若已實施上述薄片熱壓接合步驟，則實施對成為一體化單元W的晶圓10沿著分割預定線14施以切割加工的分割步驟。以下，針對分割步驟進行具體說明。
將由薄片熱壓接合步驟所得之一體化單元W，如圖4所示，往實施切割加工之切割裝置70（僅局部顯示）搬送，並使基板30側朝下而載置於切割裝置70所配設之卡盤台80的吸附卡盤80a上。吸附卡盤80a由具有通氣性之多孔陶瓷所構成，令和卡盤台80連接之未圖示的吸引手段運轉，藉此讓一體化單元W吸引保持在卡盤台80。
如圖5所示，切割裝置70具備主軸單元71。主軸單元71具備刀片蓋74，其保持主軸72前端部所固定之切割刀片73。在刀片蓋74中，於包夾鄰接切割刀片73之位置配設有切割水供給管75，並朝向切割刀片73對晶圓10的切割處供給切割水。
由切割刀片73實施切割之前，利用未圖示的對準手段，進行切割刀片73和晶圓10的正面10a側所形成之分割預定線14的對位（對準）。
若已由該對準手段實施了對準，則如圖5所示，使高速旋轉之切割刀片73從卡盤台80所保持之晶圓10的正面10a側定位於分割預定線14之加工開始位置，再下降以切入，並使晶圓10相對於切割刀片73往箭頭X所示之X方向（加工給進方向）移動。切割刀片73之前端位置係設定成從晶圓10的正面10a到薄片20之深度，並藉由切割刀片73沿著分割預定線14形成完全分割晶圓10的分割槽100。除了令保持包含晶圓10之一體化單元W的卡盤台80往X方向移動，一邊也使卡盤台80在箭頭Y所示之Y方向及旋轉方向上適當移動，藉由上述切割加工，沿著晶圓10的所有分割預定線14形成切割槽100（參照圖6的上段），並分割成一個個元件晶片12’。以上，分割步驟完成。
（剝離步驟） 若上述分割步驟已完成，則實施從晶圓10剝離薄片20及基板30之剝離步驟。以下，針對剝離步驟之實施順序進行說明。
包含由上述分割步驟分割成一個個元件晶片12’之晶圓10的一體化單元W，係被從切割裝置70之卡盤台80搬出，並往圖6所示之剝離用保持台90搬送。搬送至剝離用保持台90之一體化單元W，使上下翻轉以將基板30朝向上方，亦即，令晶圓10朝向下方，而載置於剝離用保持台90之吸附卡盤90a上。此外，剝離用保持台90具備和上述切割裝置70之卡盤台80同樣的構成，亦可不用另外準備剝離用保持台90，而使用切割裝置70之卡盤台80。
若已使未圖示的吸引手段運轉，藉以讓一體化單元W吸引保持在剝離用保持台90上，則進行對薄片20加熱等，如圖7所示將薄片20及基板30自晶圓10剝離。此外，實施剝離步驟之際，若將薄片20加熱，就會使薄片20軟化，所以能輕易地剝離，但從晶圓10上剝離薄片20之前，亦可將基板30從薄片20上剝離。在此情形，將基板30與薄片20依序剝離即可。
上述說明中，將薄片20及基板30從晶圓10剝離之際係對薄片20加熱，但也有藉由冷卻使薄片20的黏著力降低的情況，亦可將薄片20冷卻後再實施上述剝離步驟。實施剝離步驟之際，要對薄片20加熱或冷卻，則因應構成薄片20的材料之特性來選擇即可。根據上述完成剝離步驟，晶圓10繼續被吸引保持在剝離用保持台90上，並成為被分割成一個個元件晶片12’之狀態。
（切割膠膜配設步驟） 在本實施形態中，考慮到將分割成一個個元件晶片12’之晶圓10收納於預定的卡匣盒，或拾取一個個經分割之元件晶片12’往下個步驟搬送，就在實施上述剝離步驟之後，實施切割膠膜配設步驟。經過上述剝離步驟，吸引保持在剝離用保持台90之晶圓10，如圖7所理解的會讓晶圓10之背面10b露出於上方。在本實施形態中，如圖8（a）所示，準備具有設定成尺寸大於晶圓10之開口部的環狀框架F，將比該開口部更大的圓形切割膠膜T之外周黏貼於框架F，再使剝離用保持台90所保持之晶圓10定位於開口部的中央，來將晶圓10之背面10b黏貼於切割膠膜T。接著，令剝離用保持台90所連接之未圖示的吸引手段停止，使晶圓10脫離剝離用保持台90。然後，如圖8（b）所示，使透過切割膠膜T保持於框架F之晶圓10翻轉，完成切割膠膜配設步驟。藉由如此為之，在分割成一個個元件晶片12’之後，也可繼續維持晶圓10之形態，而收納於未圖示的卡匣盒，或往未圖示的實施拾取步驟等之拾取裝置等搬送。
根據本實施形態，晶圓10係藉由薄片熱壓接合步驟的實施，透過薄片20以充分的支撐力支撐於基板30，在對晶圓10施行切割加工之際，晶圓10受到穩定的支撐，即使對晶圓10的正面10a所形成之分割預定線14藉由切割刀片73加以切割加工，也可防止元件晶片12’產生崩缺等。另外，在晶圓配設步驟中，由於並未透過液狀樹脂、糊劑及蠟等而是藉由薄片20使晶圓10保持於基板30，所以即使分割步驟完成，從晶圓的背面10b上將薄片20及基板30剝離，也不會有液狀樹脂、糊劑、蠟等附著殘留於元件晶片12’之背面，不會讓元件之品質降低。
此外，於上述實施形態中，雖由聚乙烯片構成薄片20，但本發明並不限於此。作為無需液狀樹脂、糊劑、蠟等便能支撐晶圓10之薄片20，可自聚烯烴系片、聚酯系片之中適當選擇。作為聚烯烴系片，除了上述聚乙烯片之外，可選擇例如聚丙烯（PP）片、聚苯乙烯（PS）片。另外，作為聚酯系片，可選擇例如聚對苯二甲酸乙二酯（PET）片、聚對萘二甲酸乙二酯（PEN）片。
於上述實施形態中，在薄片熱壓接合步驟中，對薄片20加熱之際的溫度設定成聚乙烯片之熔點附近的溫度（120~140℃），但如上所述，選擇其他片材作為薄片20的情況下，較佳為加熱到所選擇薄片材料之熔點附近的溫度。例如，薄片20由聚丙烯片所構成的情況下，宜令加熱之際的溫度設定為160~180℃，而薄片20由聚苯乙烯片所構成的情況下，宜令加熱之際的溫度設定為220~240℃。另外，薄片20由聚對苯二甲酸乙二酯片所構成的情況下，宜令加熱之際的溫度設定為250~270℃，薄片20由聚對萘二甲酸乙二酯片所構成的情況下，宜令加熱之際的溫度設定為160~180℃。
另外，於上述實施形態中，雖藉由密閉罩構件62形成內部空間S而成為密閉環境，但本發明並不限於此。例如，如圖9（a）所示，使晶圓10和薄片20、基板30一起保持在具有比基板30更大的吸附卡盤96之保持台94上，藉由用膜狀構件200覆蓋吸附卡盤96之整個上表面，並由吸附卡盤96使負壓Vm作用，可使包含晶圓10之膜狀構件200的內側成為密閉環境，並將該密閉環境內之空間減壓。接著，如圖9（b）中局部擴大剖面圖所示，藉由具備加熱手段（圖示省略）之滾輪210，一邊將薄片20加熱至所求的溫度，一邊自膜狀構件200之上推壓晶圓10的整個背面10b，也能實施本發明之薄片熱壓接合步驟。
於上述實施形態中，基板30由玻璃所構成，但本發明並不限於此，只要在薄片熱壓接合步驟時即使加熱薄片20也不會軟化，並且能在實施分割步驟之際確保予以支撐而不使晶圓10破損的剛性，可採用其他材料，例如鋁、陶瓷等所構成之基板30。再者，只要是不易受加熱薄片20之際的溫度影響的高熔點材料，亦可自樹脂中做選擇。例如，選擇聚乙烯片作為薄片20的情況下，薄片熱壓接合步驟時之加熱溫度為120~140℃，所以作為基板30，亦可採用熔點為250~270℃之聚對苯二甲酸乙二酯（PET）。亦即，基板30較佳為自熔點溫度高於薄片20之材料中做選擇。
10‧‧‧晶圓 12‧‧‧元件 14‧‧‧分割預定線 20‧‧‧薄片 30‧‧‧基板 40‧‧‧支撐台 42‧‧‧電熱器 50‧‧‧基台 52‧‧‧吸引孔 60‧‧‧熱壓接合裝置 62‧‧‧密閉罩構件 64‧‧‧推壓構件 64b‧‧‧推壓板 70‧‧‧切割裝置 72‧‧‧主軸 74‧‧‧刀片蓋 80‧‧‧卡盤台 90‧‧‧剝離用保持台 200‧‧‧膜狀構件 210‧‧‧滾輪
圖1係顯示晶圓配設步驟的實施態樣之立體圖。 圖2係依序以（a）~（c）顯示薄片熱壓接合步驟的實施態樣之局部剖面側視圖。 圖3係由圖2所示薄片熱壓接合步驟所得的一體化單元之側視圖。 圖4係顯示將圖3的薄片熱壓接合步驟所得一體化單元保持在切割裝置的卡盤台的態樣之立體圖。 圖5係顯示分割步驟的實施態樣之立體圖。 圖6係顯示將實施圖5所示分割步驟後的一體化單元W載置於剝離用保持台的態樣之立體圖。 圖7係顯示自圖6所示一體化單元W將基板剝離的態樣之立體圖。 圖8係依序以（a）、（b）顯示切割膠膜配設步驟之立體圖。 圖9係顯示薄片熱壓接合步驟的另一實施形態之立體圖（a），及局部擴大剖面圖（b）。
10‧‧‧晶圓
20‧‧‧薄片
30‧‧‧基板
40‧‧‧支撐台
42‧‧‧電熱器
50‧‧‧基台
52‧‧‧吸引孔
60‧‧‧熱壓接合裝置
62‧‧‧密閉罩構件
62a‧‧‧上壁
62b‧‧‧下壁
62c‧‧‧開口
62d‧‧‧密封構造
62e‧‧‧彈性密封構件
64‧‧‧推壓構件
64a‧‧‧支撐軸
64b‧‧‧推壓板
S‧‧‧內部空間

Claims (5)

  1. 一種晶圓加工方法，將有多個元件由互相交叉的多條分割預定線所劃分而形成於正面之晶圓分割成一個個元件晶片； 該晶圓加工方法具備： 晶圓配設步驟，在支撐晶圓之基板的上表面鋪設聚烯烴系片或是聚酯系薄片的任一種薄片，再將晶圓的背面定位並配設於該薄片的上表面； 薄片熱壓接合步驟，使透過該薄片而配設於該基板之晶圓在密閉環境內減壓，對該薄片加熱並且將晶圓往該薄片推壓，以將晶圓透過該薄片熱壓接合於該基板； 分割步驟，在實施該薄片熱壓接合步驟之後，將切割刀片定位於晶圓的正面並對分割預定線進行切割，以將晶圓分割成一個個元件晶片；以及 剝離步驟，在實施該分割步驟之後，將該薄片與該基板自晶圓的背面剝離。
  2. 如申請專利範圍第1項所述之晶圓加工方法，其中， 該聚烯烴系之薄片，選自由聚乙烯片、聚丙烯片及聚苯乙烯片所組成之群組。
  3. 如申請專利範圍第2項所述之晶圓加工方法，其中， 選擇聚烯烴系之薄片作為該薄片的情況下，該薄片熱壓接合步驟中的該薄片之加熱溫度，在該薄片由聚乙烯片所構成的情況下為120~140℃，在該薄片由聚丙烯片所構成的情況下為160~180℃，在該薄片由聚苯乙烯片所構成的情況下為220~240℃。
  4. 如申請專利範圍第1項所述之晶圓加工方法，其中， 該聚酯系之薄片，選自由聚對苯二甲酸乙二酯片及聚對萘二甲酸乙二酯片所組成之群組。
  5. 如申請專利範圍第4項所述之晶圓加工方法，其中， 選擇聚酯系之薄片作為該薄片的情況下，該薄片熱壓接合步驟中的該薄片之加熱溫度，在該薄片由聚對苯二甲酸乙二酯片所構成的情況下為250~270℃，在該薄片由聚對萘二甲酸乙二酯片所構成的情況下為160~180℃。
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