JP2020017658A - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
- Publication number
- JP2020017658A JP2020017658A JP2018140247A JP2018140247A JP2020017658A JP 2020017658 A JP2020017658 A JP 2020017658A JP 2018140247 A JP2018140247 A JP 2018140247A JP 2018140247 A JP2018140247 A JP 2018140247A JP 2020017658 A JP2020017658 A JP 2020017658A
- Authority
- JP
- Japan
- Prior art keywords
- sheet
- wafer
- substrate
- divided
- thermocompression bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000005520 cutting process Methods 0.000 claims abstract description 38
- 229920000098 polyolefin Polymers 0.000 claims abstract description 12
- 229920000728 polyester Polymers 0.000 claims abstract description 11
- -1 polyethylene Polymers 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000004698 Polyethylene Substances 0.000 claims description 11
- 229920000573 polyethylene Polymers 0.000 claims description 11
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 9
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 9
- 239000004743 Polypropylene Substances 0.000 claims description 7
- 239000004793 Polystyrene Substances 0.000 claims description 7
- 229920001155 polypropylene Polymers 0.000 claims description 7
- 229920002223 polystyrene Polymers 0.000 claims description 6
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 claims description 2
- 238000003825 pressing Methods 0.000 abstract description 15
- 238000007789 sealing Methods 0.000 description 11
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 239000001993 wax Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000011900 installation process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
- C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
- C08J2323/04—Homopolymers or copolymers of ethene
- C08J2323/06—Polyethene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
- C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
- C08J2323/10—Homopolymers or copolymers of propene
- C08J2323/12—Polypropene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2325/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Derivatives of such polymers
- C08J2325/02—Homopolymers or copolymers of hydrocarbons
- C08J2325/04—Homopolymers or copolymers of styrene
- C08J2325/06—Polystyrene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2367/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
- C08J2367/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
ウエーハ10、シート20、及びサブストレート30を用意したならば、図1(a)に示すように、ウエーハ10の表面10aを上方に、すなわち、裏面10bを下方に向け、支持テーブル40の上面40aに敷設されるサブストレート30に、シート20を介して配設する(図1(b)を参照。)。支持テーブル40は、基台50上に配設されており、支持テーブル40の上面は平坦に形成されている。
上記したウエーハ配設工程が実施されたならば、図2に示すシート熱圧着工程を実施する。シート熱圧着工程は、シート20を介してサブストレート30に配設されたウエーハ10を密閉環境内で減圧してシート20を加熱すると共にウエーハ10を押圧して、ウエーハ10とシート20とを熱圧着する工程である。なお、支持テーブル40の内部には、加熱手段として、電気ヒータ42、及び図示しない温度センサーが内蔵される。電気ヒータ42及び該温度センサーは、図示しない制御装置、及び電源に接続され、支持テーブル40を所望の温度に調整することが可能になっている。以下に具体的に説明する。
上記したシート熱圧着工程を実施したならば、一体化ユニットWとされたウエーハ10を分割予定ライン14に沿って切削加工を施す分割工程を実施する。以下に、分割工程について具体的に説明する。
上記した分割工程が完了したならば、ウエーハ10から、シート20及びサブストレート30を剥離する剥離工程を実施する。以下に、剥離工程の実施手順について説明する。
本実施形態では、個々のデバイスチップ12’に分割されたウエーハ10を所定のカセットケースに収容したり、個々に分割したデバイスチップ12’をピックアップして次工程に搬送したりすることを考慮して、上記した剥離工程を実施した後、ダイシングテープ配設工程を実施する。上記した剥離工程を経て、剥離用保持手段90に吸引保持されたウエーハ10は、図7から理解されるように、ウエーハ10の裏面10bが上方に露出している。本実施形態では、図8(a)に示すように、ウエーハ10よりも大きな寸法に設定された開口部を有する環状のフレームFを用意し、該開口部よりも大きい円形のダイシングテープTの外周をフレームFに貼着し、さらに、開口部の中央に剥離用保持手段90に保持されたウエーハ10を位置付け、ダイシングテープTにウエーハ10の裏面10bを貼着する。そして、剥離用保持手段90に接続された図示しない吸引手段を停止して、剥離用保持手段90からウエーハ10を離脱させる。そして、図8(b)に示すように、ダイシングテープTを介してフレームFに保持されたウエーハ10を反転させ、ダイシングテープ配設工程が完了する。このようにすることで、個々のデバイスチップ12’に分割した後も、ウエーハ10の形態を維持したまま、図示しないカセットケースに収容したり、図示しないピックアップ工程等を実施するピックアップ装置等に搬送したりすることができる。
12:デバイス
14:分割予定ライン
20:シート
22:盛り上がり部
30:サブストレート
40:支持テーブル
42:電気ヒータ
50:基台
52:吸引孔
60:熱圧着装置
62:密閉カバー部材
64:押圧部材
64b:押圧プレート
70:切削装置
72:回転スピンドル
74:ブレードカバー
80:保持手段
90:剥離用保持手段
200:フィルム状部材
210:ローラ
Claims (5)
- 複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハを個々のデバイスチップに分割するウエーハの加工方法であって、
ウエーハを支持するサブストレートの上面にポリオレフィン系シート、又はポリエステル系シートのいずれかのシートを敷設し、該シートの上面にウエーハの裏面を位置付けて配設するウエーハ配設工程と、
該シートを介して該サブストレートに配設されたウエーハを密閉環境内で減圧して該シートを加熱すると共にウエーハを押圧して該シートを介してウエーハを該サブストレートに熱圧着するシート熱圧着工程と、
ウエーハの表面に切削ブレードを位置付けて分割予定ラインを切削してウエーハを個々のデバイスチップに分割する分割工程と、
ウエーハの裏面から該シートと該サブストレートを剥離する剥離工程と、
から少なくとも構成されるウエーハの加工方法。 - 該ポリオレフィン系のシートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかで構成される請求項1に記載のウエーハの加工方法。
- 該シートとしてポリオレフィン系のシートが選択された場合の該シート熱圧着工程における該シートの加熱温度は、該シートがポリエチレンシートで構成される場合は120〜140℃であり、該シートがポリプロピレンシートで構成される場合は160〜180℃であり、該シートがポリスチレンシートで構成される場合は220〜240℃である請求項2に記載のウエーハの加工方法。
- 該ポリエステル系のシートは、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシート、のいずれかで構成される請求項1に記載のウエーハの加工方法。
- 該シートとしてポリエステル系のシートが選択された場合の該シート熱圧着工程における該シートの加熱温度は、該シートがポリエチレンテレフタレートシートで構成される場合は250〜270℃であり、該シートがポリエチレンナフタレートシートで構成される場合は160〜180℃である請求項4に記載のウエーハの加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018140247A JP7181020B2 (ja) | 2018-07-26 | 2018-07-26 | ウエーハの加工方法 |
KR1020190080956A KR20200012732A (ko) | 2018-07-26 | 2019-07-04 | 웨이퍼의 가공 방법 |
CN201910613278.9A CN110783249B (zh) | 2018-07-26 | 2019-07-09 | 晶片的加工方法 |
US16/513,988 US10879122B2 (en) | 2018-07-26 | 2019-07-17 | Wafer processing method |
TW108125994A TWI787535B (zh) | 2018-07-26 | 2019-07-23 | 晶圓加工方法 |
DE102019211057.6A DE102019211057A1 (de) | 2018-07-26 | 2019-07-25 | Waferbearbeitungsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018140247A JP7181020B2 (ja) | 2018-07-26 | 2018-07-26 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020017658A true JP2020017658A (ja) | 2020-01-30 |
JP7181020B2 JP7181020B2 (ja) | 2022-11-30 |
Family
ID=69149139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018140247A Active JP7181020B2 (ja) | 2018-07-26 | 2018-07-26 | ウエーハの加工方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10879122B2 (ja) |
JP (1) | JP7181020B2 (ja) |
KR (1) | KR20200012732A (ja) |
CN (1) | CN110783249B (ja) |
DE (1) | DE102019211057A1 (ja) |
TW (1) | TWI787535B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019220550A (ja) * | 2018-06-19 | 2019-12-26 | 株式会社ディスコ | ウエーハの加工方法 |
JP7286245B2 (ja) * | 2019-06-07 | 2023-06-05 | 株式会社ディスコ | ウェーハの加工方法 |
JP7286247B2 (ja) * | 2019-06-07 | 2023-06-05 | 株式会社ディスコ | ウェーハの加工方法 |
JP7345973B2 (ja) * | 2019-08-07 | 2023-09-19 | 株式会社ディスコ | ウェーハの加工方法 |
JP7341606B2 (ja) * | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | ウェーハの加工方法 |
JP7383338B2 (ja) * | 2019-10-10 | 2023-11-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP7387228B2 (ja) * | 2019-10-17 | 2023-11-28 | 株式会社ディスコ | ウェーハの加工方法 |
JP7301480B2 (ja) * | 2019-10-17 | 2023-07-03 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021077735A (ja) * | 2019-11-07 | 2021-05-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021077720A (ja) * | 2019-11-07 | 2021-05-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP2022177554A (ja) * | 2021-05-18 | 2022-12-01 | Tdk株式会社 | 基板処理装置および基板処理方法 |
JP2022177553A (ja) * | 2021-05-18 | 2022-12-01 | Tdk株式会社 | 基板処理装置 |
JP2023019193A (ja) * | 2021-07-28 | 2023-02-09 | 株式会社ディスコ | 被加工物の加工方法 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58153352A (ja) * | 1982-03-09 | 1983-09-12 | Toshiba Corp | 半導体素子の製造方法 |
JPH09266183A (ja) * | 1996-01-22 | 1997-10-07 | Texas Instr Japan Ltd | ウェハダイシング・接着用シートおよび半導体装置の製造方法 |
JP2002203821A (ja) * | 2000-12-28 | 2002-07-19 | Mitsubishi Gas Chem Co Inc | 接着および剥離法 |
JP2003037155A (ja) * | 2001-07-25 | 2003-02-07 | Mitsubishi Gas Chem Co Inc | 薄葉化ウェハーの製造法 |
JP2003077869A (ja) * | 2001-06-18 | 2003-03-14 | Disco Abrasive Syst Ltd | 半導体ウエーハの加工方法及びこれに使用される支持基板 |
JP2005191297A (ja) * | 2003-12-25 | 2005-07-14 | Jsr Corp | ダイシングフィルム及び半導体ウェハの切断方法 |
JP2007165636A (ja) * | 2005-12-14 | 2007-06-28 | Nippon Zeon Co Ltd | 半導体素子の製造方法 |
JP2008078430A (ja) * | 2006-09-22 | 2008-04-03 | Matsushita Electric Ind Co Ltd | 電子部品の製造方法 |
JP2010184319A (ja) * | 2009-02-12 | 2010-08-26 | Disco Abrasive Syst Ltd | 切削方法 |
WO2017036512A1 (en) * | 2015-08-31 | 2017-03-09 | Karl Heinz Priewasser | Method of processing wafer and protective sheeting for use in this method |
WO2018002035A2 (en) * | 2016-06-28 | 2018-01-04 | Karl Heinz Priewasser | Method of processing wafer |
WO2018003312A1 (ja) * | 2016-06-30 | 2018-01-04 | リンテック株式会社 | 半導体加工用シート |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004153159A (ja) * | 2002-10-31 | 2004-05-27 | Enzan Seisakusho:Kk | 半導体ウェハの保護部材貼着方法及びその装置 |
JP2010050214A (ja) | 2008-08-20 | 2010-03-04 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2012033637A (ja) * | 2010-07-29 | 2012-02-16 | Nitto Denko Corp | ダイシングテープ一体型半導体裏面用フィルム及び半導体装置の製造方法 |
CN103748664B (zh) * | 2011-08-09 | 2016-04-20 | 三井化学东赛璐株式会社 | 半导体装置的制造方法及该方法中所使用的半导体晶片表面保护用膜 |
WO2014157455A1 (ja) * | 2013-03-28 | 2014-10-02 | 東芝ホクト電子株式会社 | 発光装置、その製造方法、および発光装置使用装置 |
US20150235871A1 (en) * | 2014-02-18 | 2015-08-20 | Shin-Etsu Chemical Co., Ltd. | Vacuum laminating apparatus and method for manufacturing semiconductor apparatus |
TWI665239B (zh) * | 2014-09-29 | 2019-07-11 | 日商富士軟片股份有限公司 | 組成物、片的製造方法、片、積層體及帶有元件晶圓的積層體 |
JP6356581B2 (ja) * | 2014-11-19 | 2018-07-11 | 信越化学工業株式会社 | 半導体装置の製造方法 |
-
2018
- 2018-07-26 JP JP2018140247A patent/JP7181020B2/ja active Active
-
2019
- 2019-07-04 KR KR1020190080956A patent/KR20200012732A/ko active IP Right Grant
- 2019-07-09 CN CN201910613278.9A patent/CN110783249B/zh active Active
- 2019-07-17 US US16/513,988 patent/US10879122B2/en active Active
- 2019-07-23 TW TW108125994A patent/TWI787535B/zh active
- 2019-07-25 DE DE102019211057.6A patent/DE102019211057A1/de active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58153352A (ja) * | 1982-03-09 | 1983-09-12 | Toshiba Corp | 半導体素子の製造方法 |
JPH09266183A (ja) * | 1996-01-22 | 1997-10-07 | Texas Instr Japan Ltd | ウェハダイシング・接着用シートおよび半導体装置の製造方法 |
JP2002203821A (ja) * | 2000-12-28 | 2002-07-19 | Mitsubishi Gas Chem Co Inc | 接着および剥離法 |
JP2003077869A (ja) * | 2001-06-18 | 2003-03-14 | Disco Abrasive Syst Ltd | 半導体ウエーハの加工方法及びこれに使用される支持基板 |
JP2003037155A (ja) * | 2001-07-25 | 2003-02-07 | Mitsubishi Gas Chem Co Inc | 薄葉化ウェハーの製造法 |
JP2005191297A (ja) * | 2003-12-25 | 2005-07-14 | Jsr Corp | ダイシングフィルム及び半導体ウェハの切断方法 |
JP2007165636A (ja) * | 2005-12-14 | 2007-06-28 | Nippon Zeon Co Ltd | 半導体素子の製造方法 |
JP2008078430A (ja) * | 2006-09-22 | 2008-04-03 | Matsushita Electric Ind Co Ltd | 電子部品の製造方法 |
JP2010184319A (ja) * | 2009-02-12 | 2010-08-26 | Disco Abrasive Syst Ltd | 切削方法 |
WO2017036512A1 (en) * | 2015-08-31 | 2017-03-09 | Karl Heinz Priewasser | Method of processing wafer and protective sheeting for use in this method |
WO2018002035A2 (en) * | 2016-06-28 | 2018-01-04 | Karl Heinz Priewasser | Method of processing wafer |
WO2018003312A1 (ja) * | 2016-06-30 | 2018-01-04 | リンテック株式会社 | 半導体加工用シート |
Also Published As
Publication number | Publication date |
---|---|
KR20200012732A (ko) | 2020-02-05 |
JP7181020B2 (ja) | 2022-11-30 |
TW202007742A (zh) | 2020-02-16 |
CN110783249B (zh) | 2023-09-15 |
DE102019211057A1 (de) | 2020-01-30 |
US20200035559A1 (en) | 2020-01-30 |
US10879122B2 (en) | 2020-12-29 |
TWI787535B (zh) | 2022-12-21 |
CN110783249A (zh) | 2020-02-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2020017658A (ja) | ウエーハの加工方法 | |
CN110620081B (zh) | 晶片的加工方法 | |
US11315833B2 (en) | Wafer processing method including a test element group (TEG) cutting step | |
US10916466B2 (en) | Wafer uniting method | |
TWI810309B (zh) | 晶圓的加工方法 | |
JP2019186488A (ja) | ウエーハの加工方法 | |
TWI813674B (zh) | 晶圓的加工方法 | |
JP7317482B2 (ja) | ウエーハの加工方法 | |
JP7317483B2 (ja) | ウエーハの加工方法 | |
US20230154782A1 (en) | Tape pressure bonding apparatus | |
JP7404109B2 (ja) | 一体化方法 | |
JP2021185591A (ja) | ウエーハの加工方法 | |
JP2021068742A (ja) | リングフレーム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210518 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220519 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220721 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221025 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221117 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7181020 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |