TWI704609B - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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TWI704609B
TWI704609B TW105134779A TW105134779A TWI704609B TW I704609 B TWI704609 B TW I704609B TW 105134779 A TW105134779 A TW 105134779A TW 105134779 A TW105134779 A TW 105134779A TW I704609 B TWI704609 B TW I704609B
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森數洋司
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日商迪思科股份有限公司
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Abstract

本發明的課題在於提供一種即使採用硬度高的基板作為積層功能層的晶圓，依然能夠將分離成一個個的器件減薄之晶圓的加工方法。 本發明是一種將表面有隔著緩衝層將功能層積層於基板的上表面且以分割預定線區劃成之複數個器件的晶圓，沿分割預定線分割成一個個的器件之晶圓的加工方法，包含：沿分割預定線至少切斷功能層之切斷步驟、在晶圓的表面配設保護部件之保護部件配設步驟、將對基板具有透射性的波長之雷射光的聚光點定位於緩衝層進行照射以破壞緩衝層之緩衝層破壞步驟，和，將該基板從功能層剝離以分離成各個器件之基板剝離步驟。

Description

晶圓的加工方法
發明領域 本發明涉及一種將表面上形成有功能層之薄板狀的晶圓分離成一個個的器件之晶圓的加工方法。
發明背景 在藍寶石基板、SiC基板的上表面，隔著緩衝層由n型半導層、p型半導體層所構成的功能層(發光層：也稱做epi層)被分割預定線區劃而成之發光器件形成於表面的晶圓，或，在該基板的上表面隔著緩衝層積層由GaN半導體層所形成之功能層被分割預定線區劃而成之功率器件形成於表面的晶圓，係以雷射加工裝置等之分割裝置，沿分割預定線切斷而分割成一個個的發光器件、功率器件 ，並應用於各種照明機器，或者，電視機等之電器。
上述各器件係應用於行動電話、具有通信功能的腕錶等的產品；為了讓各裝置更為小型化、輕量化，而期待將其厚度做得更薄的技術。從晶圓分離以製造器件時，作為減薄的技術已有稱為預先劃片的技術被提出來(參照例如，專利文獻1)。
該技術係，沿分割預定線預先形成深度相當於器件之完工厚度的溝槽，之後，再於晶圓的表面配設保護部件並研磨晶圓的背面使該溝槽露出背面而將晶圓分割成一個個器件的技術。
先前技術文獻 〔專利文獻〕 〔專利文獻1〕特開平11-040520號公報
發明概要 〔發明欲解決的課題〕 上述專利文獻1中記載的技術是藉研磨晶圓的背面將器件減薄的技術，但是，當所採用的是硬度為硬質的晶圓，例如，藍寶石、SiC基板時，研磨晶圓的背面是困難的，有難以採用該預先劃片的技術將分離的器件減薄的問題。
本發明即是有鑑於上述事實而完成的，其主要技術課題在於提供一種即使採用硬度高的基板作為積層功能層的晶圓，依然能夠將分離成一個個的器件減薄之晶圓的加工方法。
用於解決課題的手段 為解決上述的主要技術課題，依據本發明，提供的是一種將表面有隔著緩衝層將功能層積層於基板的上表面且以分割預定線區劃成之複數個器件的晶圓，沿分割預定線分割成一個個的器件之晶圓的加工方法，其係具有：沿分割預定線至少切斷功能層之切斷步驟、實施過該切斷步驟後，在晶圓的表面配設保護部件之保護部件配設步驟、實施過該保護部件配設步驟後，將對基板具有透射性的波長之雷射光的聚光點定位於緩衝層進行照射以破壞緩衝層之緩衝層破壞步驟、和實施過該緩衝層破壞步驟後，將該基板從該功能層剝離以分離成各個器件之基板剝離步驟的晶圓的加工方法。
較佳的是，在該保護部件配設步驟中，將該晶圓收容於具有收納該晶圓之開口部的框架之該開口部，同時用黏著膠帶將該晶圓的表面與框架的外周黏貼起來，隔著該黏著膠帶將該晶圓支承於框架上，藉以將保護部件配設於該晶圓的表面；晶圓的加工方法並宜於該基板剝離步驟後，進一步包含擴展該黏著膠帶以擴展各器件的間隔並從黏著膠帶拾取器件的拾取步驟。
此外，該切斷步驟包含利用切割刀的切斷、利用雷射光的切斷、利用電漿蝕刻的切斷、利用濕式蝕刻的切斷之任一者。
發明的效果 依據本發明之晶圓的加工方法，採用硬度高的基板，例如，藍寶石基板、SiC基板並分離所形成之由功能層構成的器件時，可以不研磨各基板地從功能層剝離，其結果，能夠形成極薄的器件。
另外，因為不研磨基板地從功能層剝離，所以剝離的基板能夠作為用於形成功能層的基板進行再利用，在經濟上也是有利的。
用於實施發明的形態 以下，將就本發明實施形態之晶圓的加工方法，參照所附圖式詳細地進行說明。圖1 (a), (b)中所示為，作為被加工物之光器件晶圓10的斜視圖，以及主要部分擴大斷面圖。光器件晶圓10是在由略呈圓板狀之藍寶石構成的磊晶基板11之表面上，以磊晶成長法形成有由n型氮化鎵半導體層，以及p型氮化鎵半導體層所成的光器件層12。
於磊晶基板11的表面以磊晶成長法積層由n型氮化鎵半導體層，以及p型氮化鎵半導體層所構成之光器件層12時，在磊晶基板11的表面和光器件層12之間，形成了由氮化鎵(GaN)所構成的，厚度為例如，1μm之緩衝層13。像這樣地被構成的光器件晶圓10，在圖示之實施形態中，光器件層12的厚度形成，例如，5μm。另外，於該光器件層12，係如圖1 (a), (b)所示地，在由形成格子形狀之複數條分割預定線21所區劃成的複數個區域上，形成有器件22。
以下，將更具體地說明沿分割預定線21將該光器件晶圓10分割成一個個的器件22之晶圓的加工方法。
(切斷步驟) 首先，如圖2 (a)～(c)所示地，用具有指定厚度的切割刀從該光器件晶圓10的表面側沿分割預定線21，形成深度相當於作為功能層而形成之至少光器件層12的厚度之切割槽21a，切斷光器件層12。
如圖2 (a)所示之切割裝置3具備：保持被加工物之吸盤工作台31、對被該吸盤工作台31保持著的被加工物進行切割之切割構件32，和對被該吸盤工作台31保持著的被加工物進行攝像之攝像構件33。吸盤工作台31被裝配成吸引保持被加工物的狀態，並以未圖示出之切割進給構件，使其在圖2 (a)中以箭頭X表示的切割進給方向上移動。
上述切割構件32包含，具有實質上水平地配置之轉軸套321、旋轉自如地支承於該轉軸套321之旋轉軸322，和，安裝在該旋轉軸322的前端部之環狀的刀刃323a之切割刀323；旋轉軸322受配設在轉軸套321內之未圖示出的伺服馬達驅動而在以箭頭322a表示的方向上旋轉。上述攝像構件33由顯微鏡和CCD相機等之光學構件構成，將所拍攝的影像信號傳送到未圖示出之控制機構，執行用於實施形成於光器件晶圓10之分割預定線21與切割刀323的對準之圖形匹配等的影像處理，完成切割區域的校準。
如果如上所述地實施過校準，就讓保持著光器件晶圓10的吸盤工作台31移動到切割加工區域的切割開始位置，將切割刀323往下方橫切，同時使切割刀323以指定的旋轉速度旋轉，並使吸盤工作台31在箭頭X表示的方向上以指定的切割進刀速度移動，且移動直至達到在X軸方向的切割結束位置為止，藉以形成切割槽21a (切割槽形成步驟)，並使吸盤工作台31的移動停止。然後，使切割刀323上昇，同時在以箭頭Y表示的方向(分度進給方向)分度傳送吸盤工作台31，接著將應該要切割的分割預定線21定位到與切割刀323對應的位置，實施上述之切割槽形成步驟。並且，對形成於該光器件晶圓10之所有的分割預定線21實施上述的切割槽形成步驟(參照圖2(c))。此外，在本實施形態中，其切割深度係設定成除了光器件層12以外，緩衝層13也同時被切斷。以上，切斷步驟結束。
(保護部件配設步驟) 如果實施過對上述之光器件晶圓10的切斷步驟，就要實施在光器件晶圓10之形成有光器件層12的表面側黏貼作為保護部件之黏著膠帶T的保護部件配設步驟。亦即，如圖3所示地，將上述之光器件晶圓10的表面，即光器件層12側，黏貼於外周部被安裝成覆蓋環狀之框架F的內側開口部之作為保護部件的黏著膠帶T的表面，完成保護部件配設步驟。因此，黏貼於黏著膠帶T上的光器件晶圓10變成背面側，即磊晶基板11側在上側。
(緩衝層破壞步驟) 如果保護部件配設步驟結束了，就用如圖4所示之配備雷射光照射構件4的雷射加工裝置實施緩衝層破壞步驟。此外，因為該雷射加工裝置也可以採用周知的雷射加工裝置，且並未構成本發明的主要部分，故而省略關於其整體構造及其詳細內容的說明。
為實施圖4所示之緩衝層破壞步驟，係將實施過上述保護部件配設步驟的光器件晶圓10之黏著膠帶T側，載置於該雷射加工裝置所具備之吸盤工作台(省略圖示)上。然後使未圖示出之吸引構件作動，藉以將光器件晶圓10隔著黏著膠帶T吸引保持於吸盤工作台上(晶圓保持步驟)。此外，圖4 (a)中雖然省略表示，但是環狀的框架F是由配設於吸盤工作台之適當的框架保持部件保持著。
如果如上所述地實施完晶圓保持步驟，就將吸引保持住光器件晶圓10的吸盤工作台移動到雷射加工裝置的加工區域，如圖4 (a)所示地，定位到雷射光照射構件4之聚光器41的正下方。然後，如圖4 (b)所示地，根據來自未圖示出之控制機構的控制信號，使雷射光照射構件4作動，從光器件晶圓10之磊晶基板11側對緩衝層13，照射對構成磊晶基板11的藍寶石具有透射性，對構成緩衝層13之氮化鎵(GaN)具有吸收性的波長之雷射光，實施破緩衝層13的雷射光照射。此時，一邊照射雷射光，一邊使吸盤工作台在以箭頭X表示之加工進給方向，及，以箭頭Y表示之分度進給方向上移動，將從聚光器41照射來的脈衝雷射光之光點，控制成照射到光器件晶圓10之緩衝層13的全面(雷射光照射步驟)。其結果，形成於光器件層12與磊晶基板11之間的緩衝層13在整個區域都受到破壞，由緩衝層13造成之磊晶基板11與光器件層12的結合功能喪失。
上述雷射光照射步驟中的加工條件設定成例如，以下所示。 光源                             ：DPSS雷射 波長                             ：266nm 重複頻率                       ：50kHz 輸出                             ：0.2W 點徑                             ：φ50μm 脈衝寬                          ：10ps 進給速度                       ：1000mm／s
(基板剝離步驟) 如果實施過上述之緩衝層破壞步驟，接著就要實施剝離光器件晶圓10之磊晶基板11的基板剝離步驟(參照圖5)。首先，緩衝層破壞步驟一結束，就將載置著該光器件晶圓10的吸盤工作台移動到配設著剝離機構5的剝離位置，將被該吸盤工作台保持著的光器件晶圓10定位到支承構件52所支承著的吸附構件51的正下方並使該吸附構件51下降。然後，使隔著吸引通路511而獲得支承之吸引襯墊512a～512c接觸磊晶基板11。一旦吸引襯墊512a～512c接觸到磊晶基板11的背面，就讓未圖示出之吸引構件作動，使負壓隔著該支承構件52及吸引通路511產生作用，通過吸引襯墊512a～512c吸附磊晶基板11的背面。以該吸引襯墊512a～512c吸附磊晶基板11之後，如圖5所示地，使吸附著該磊晶基板11的吸引襯墊512a～512c往背離磊晶基板11的方向，即上方移動，將磊晶基板11從光器件層12剝離，基板剝離步驟即告完成。該基板剝離步驟如果結束了，就將剝離的磊晶基板11收納到未圖示出之磊晶基板收納容器，而在被載置於吸盤工作台上之黏著膠帶T，則形成磊晶基板11上所積層之複數個器件22被一個個地分離並保持住的狀態。此外，在實施上述緩衝層破壞步驟，到實施該基板剝離步驟為止之間，可以插進對光器件晶圓10之緩衝層13的加熱、冷卻步驟，從而更確實地實施基板剝離步驟。
(拾取步驟) 上述基板剝離步驟如果結束了，就實施從黏著膠帶T拾取該器件22的拾取步驟。該拾取步驟係以圖6中示出其一部分的拾取裝置6來實施的工序，該拾取裝置6配備，框架保持部件61，和，將環狀的框架F載置於其上表面部後再將該環狀的框架F保持住之夾具62，及用於使裝設在由該夾具62保持住之環狀的框架F上之黏著膠帶T，連同被保持在上表面之一個個的器件22一起擴展之，至少上方形成開口的圓筒形狀的擴展鼓輪63。框架保持部件61由設置成圍住擴展鼓輪63之複數個氣缸623a，和從氣缸623a延伸出之活塞桿623b構成的支承構件623可昇降地支承著。
擴展鼓輪63設定成比環狀的框架F的內徑小，而且比裝設於環狀的框架F的框架F之黏著膠帶T上所黏貼的光器件晶圓10的外徑大。此處，如圖6所示，分離裝置6可以在擴展鼓輪63的上表面部與框架保持部件61約略形成相同高度的位置(以虛線表示)，和，通過支承構件623的作用使框架保持部件61下降，擴展鼓輪63的上端部變成比框架保持部件61的上端部來得高的位置(以實線表示)。
讓上述框架保持部件61下降，使擴展鼓輪63的上端從以虛線表示的位置，相對地變化成以實線表示之比框架保持部件61更高的位置時，安裝在環狀的框架F上之黏著膠帶T會貼到擴展鼓輪63的上端緣而被擴展。結果，由於拉力放射狀地作用於黏貼在黏著膠帶T上之光器件晶圓10，因此已經被分割成一個個的器件22彼此間的間隔擴大。然後，在一個個的器件22彼此間的間隔擴大的狀態下，使拾取筒夾64作動，吸附已經被分割的器件22，從黏著膠帶T剝離並進行拾取，再搬送到未圖示出之收納托盤。經由以上工序，拾取步驟結束，依據本發明之晶圓的加工方法就完成了。此外，在上述說明中，切斷步驟中雖然除了光器件層12之外也同時將緩衝層13切斷，但是未必要如此限定。在切斷步驟中只要將切割深度設定成至少切斷光器件層12即可；緩衝層13在切斷步驟中未被完全切斷而殘存時，在該拾取步驟中，當黏貼膠帶T受到擴展時就會完全分離。
依據本發明之晶圓的加工方法並不限於上述實施形態中所記載的具體構成。上述實施形態中說明的雖然是，對將功能層(光器件)形成於由藍寶石形成之磊晶基板上的晶圓進行加工的實施例，但是也可以將本發明應用至對將功能層(功率器件)形成於SiC基板之半導體晶圓進行加工的情況。另外，上述說明中雖然說明了本發明在對硬度高的基板進行加工的情形中是有效的意旨，但是未必要限定在對硬度高的基板進行加工的情形；即使是對硬度低的基板應用本發明，和習知技術相比，還是能夠容易地製造厚度薄的器件 ，可以發揮和上述之實施形態同樣的作用效果。
另外，在上述實施形態中，作為實施切斷步驟的具體手段，所說明的雖然是用切割刀沿分割預定線形成切割槽，但是並不限於此。形成切割槽的手段也可以選擇，用雷射光切斷的方式、用電漿蝕刻切斷的方式、用濕式蝕刻切斷的方式等，任一種切斷方式都可以選擇。
此外，上述實施態樣中，在保護部件配設步驟，雖然是將晶圓收容於具有收納晶圓之開口部的框架的開口部，並且用黏著膠帶黏貼晶圓的表面和框架的外周，隔著黏貼膠帶將晶圓支承於框架上，藉以將保護部件配設於晶圓表面，但是並不限於這種方式。例如，也可以採用只是將和晶圓形成相同形狀之作為保護部件的膠帶黏貼於晶圓表面的方式，或者將樹脂等塗覆於晶圓表面的方式，進行保護部件的配設。
如上所述，若依據本發明，由於能夠藉由實施緩衝層破壞步驟、基板剝離步驟，將隔著緩衝層形成功能層之基板側，大略上完全地除去，因此和利用預先劃片法形成之器件相比，可以製得僅由功能層形成之極薄的器件，應用於行動電話、具備通信功能的腕錶等，就能夠對各種裝置之更小型化、輕量化做出貢獻。另外，因為不對基板實施研磨地從功能層剝離，所以剝離的基板能夠作為用於形成功能層的基板進行再利用，在經濟上也是有利的。
3‧‧‧切割裝置31‧‧‧吸盤工作台32‧‧‧切割構件321‧‧‧轉軸套322‧‧‧旋轉軸322a‧‧‧箭頭323‧‧‧切割刀323a‧‧‧刀刃33‧‧‧攝像構件4‧‧‧雷射光照射構件41‧‧‧聚光器5‧‧‧剝離機構51‧‧‧吸附構件511‧‧‧吸引通路512a,512b,512c‧‧‧吸引襯墊52‧‧‧支承構件6‧‧‧分離裝置61‧‧‧框架保持部件62‧‧‧夾具623‧‧‧支承構件623a‧‧‧氣缸623b‧‧‧活塞桿63‧‧‧擴展鼓輪64‧‧‧拾取筒夾10‧‧‧光器件晶圓11‧‧‧磊晶基板12‧‧‧光器件層13‧‧‧緩衝層21‧‧‧分割預定線21a‧‧‧切割槽22‧‧‧器件F‧‧‧框架T‧‧‧黏著膠帶
【圖1】(a), (b) 光器件晶圓的斜視圖，以及主要部分擴大斷面圖。 【圖2】(a)～(c) 切割步驟的示意說明圖。 【圖3】保護部件配設步驟的示意說明圖。 【圖4】(a), (b) 緩衝層破壞步驟的示意說明圖。 【圖5】基板剝離步驟的示意說明圖。 【圖6】拾取步驟的示意說明圖。
4‧‧‧雷射光照射構件
10‧‧‧光器件晶圓
11‧‧‧磊晶基板
12‧‧‧光器件層
13‧‧‧緩衝層
41‧‧‧聚光器
F‧‧‧框架
T‧‧‧黏著膠帶

Claims (2)

  1. 一種晶圓的加工方法，係將表面有隔著緩衝層將功能層積層於基板的上表面且以分割預定線區劃成之複數個器件的晶圓，沿分割預定線分割成一個個的器件之晶圓的加工方法，其包含：沿分割預定線至少切斷功能層之切斷步驟、實施該切斷步驟後，在晶圓的表面配設保護部件之保護部件配設步驟、實施該保護部件配設步驟後，將對基板具有透射性的波長之雷射光的聚光點定位於緩衝層進行照射以破壞緩衝層之緩衝層破壞步驟、和實施該緩衝層破壞步驟後，將該基板從該功能層剝離以分離成各個器件之基板剝離步驟，在該保護部件配設步驟中，將該晶圓收納於具有收容該晶圓之開口部的環狀框架之該開口部，並且用黏著膠帶將該晶圓的表面與框架的外周黏貼起來，隔著該黏著膠帶將該晶圓支承於框架上，藉以將保護部件配設於該晶圓的表面；且該基板剝離步驟之後，進一步包含擴展該黏著膠帶以擴展各器件的間隔並從黏著膠帶拾取器件的拾取步驟。
  2. 如請求項1之晶圓的加工方法，其中該切斷步驟包含利用切割刀的切斷、利用雷射光的切斷、利用電漿蝕刻的切斷、利用濕式蝕刻的切斷之任一者。
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