TW201739841A - 包含添加稀土金屬氧化物之發光二極體封裝體之背光單元 - Google Patents
包含添加稀土金屬氧化物之發光二極體封裝體之背光單元 Download PDFInfo
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- 229910052761 rare earth metal Inorganic materials 0.000 title claims description 7
- 150000002910 rare earth metals Chemical class 0.000 title claims description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 30
- 229920005989 resin Polymers 0.000 claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 19
- 239000002245 particle Substances 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 23
- 239000002105 nanoparticle Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 14
- 239000005022 packaging material Substances 0.000 claims description 10
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- -1 rare earth metal salt Chemical class 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 210000004508 polar body Anatomy 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical group [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
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- 239000012788 optical film Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical group [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/247—Carbonates
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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Abstract
本揭露有關於藉由添加發光二極體封裝體封裝用之一樹脂與稀土金屬氧化物而具有較佳光汲出效率之一種發光二極體封裝體,及包括此發光二極體封裝體之背光單元。
Description
本揭露有關於包含添加稀土金屬氧化物之發光二極體(下稱LED)封裝體之一種背光單元(下稱BLU)。特別地,本揭露關於藉由添加發光二極體封裝體封裝用之一樹脂與稀土金屬氧化物而具有較佳光汲出效率之一種發光二極體封裝體,及包括此發光二極體封裝體之背光單元。
由於全球節能的趨勢及藉由化合物半導體的技術發展所達成之應用品質的改善,發光二極體的工業化已經快速進步。作為發光裝置之發光二極體為藉由轉化電能成為紅外線或使用化合物半導體特性之光線而傳送與接收訊號之一種半導體,並應用於家用電子產品、遙控器、電子螢幕顯示器、指示器、各種自動化裝備及相似物。
發光二極體亦應用於顯示器之中。作為顯示器,液晶顯示器(下稱LCD)為最常使用的,而不同於自發光之主動式有機發光二極體(AMOLED),液晶顯示器並不會自發光而因此需要分離之光源,其稱為背光單元。
背光單元扮演了從不會發光之液晶顯示單元之後側均勻地投射光線之一個角色,所以可以呈現顯示影像。如此
之背光單元包括均勻地設置發光二極體背光單元於液晶顯示單元面板之後的直下式(direct-lit)背光單元、以及使用位於左側與右側之發光二極體背光單元並將之反射至導光板(具有均勻地散射發光二極體所產生之光線至整個螢幕上之角色之平板)上之側光型(edge-lit)背光單元,而就已成為重要問題之纖薄化(slimness)而言,側光型為優選的。
為了更為纖薄(slimmer),便需要縮減於側光型中占據最大厚度之導光板。然而,當縮減導光板時,亦縮減了發光二極體封裝體之尺寸而導致了光量的減少。如此,便需要於縮減導光板時維持光量的方法。其結果為,需增加入射至導光板之光的效率(光入射效率)。
因應以上描述,本揭露關於提供一種包括添加稀土金屬氧化物奈米粒子之發光二極體封裝體之背光單元,以於縮減背光單元內之導光板時維持光量、基於增加照射到導光板之效率(光入射效率)之目的而控制照射至發光二極體封裝體內之導光板之發散角(出光的程度)、以及藉由增進光效率而表現出高背光單元亮度。
本揭露之一實施例提供了一種包含添加稀土金屬氧化物奈米粒子之發光二極體封裝體之背光單元。
依據本揭露之另一實施例,添加稀土金屬氧化物奈米粒子之發光二極體封裝體係由以下製程所製備:包括於一導線架上應用一黏著劑之一第一步驟製程;設置單一發光二極體晶片至導線架上之一第二步驟製程;使用如金線之導線架與
發光二極體晶片之間電性聯結用之一銲線連結導線架與發光二極體晶片之一第三製程步驟;以及使用添加稀土金屬氧化物奈米粒子之一封裝材料覆蓋導線架、發光二極體晶片、與銲線之一第四製程步驟,以保護發光二極體晶片與銲線並控制發散角(angle of beam spread)。
依據本揭露之另一實施例,添加稀土金屬氧化物奈米粒子之封裝材料係藉由添加由熱分解稀土金屬鹽類與有機材料而得到之粒子至如環氧基樹脂或矽膠基樹脂之可形成一發光二極體封裝層之一樹脂中而製備。
依據本揭露,稀土金屬氧化物奈米粒子具有介於1.5n2.5之範圍內之一折射率,並具有介於10奈米至1微米之範圍內之粒子尺寸。
100‧‧‧發光二極體封裝體
110‧‧‧基板
120‧‧‧導線架
130‧‧‧發光二極體晶片
140‧‧‧銲線
150‧‧‧反射物
210‧‧‧封裝材料
220‧‧‧稀土金屬氧化物粒子
300‧‧‧發光二極體條狀物
310‧‧‧印刷電路板(PCB)
400‧‧‧背光單元
410‧‧‧底蓋
420‧‧‧反光板
430‧‧‧導光板
440‧‧‧數個光學片
450‧‧‧頂蓋
本揭露之標的與特性將藉由配合以下實施例描述及以下圖式而清楚顯示,其中:第1圖為依據本揭露之添加至發光二極體封裝體之球狀稀土金屬氧化物奈米粒子之掃描式電子顯微鏡照片;第2圖為依據本揭露之使用球狀稀土金屬氧化物奈米粒子之一種發光二極體封裝體之結構;第3圖顯示了藉由使用第2圖所示之發光二極體封裝體控制發散角(angle of beam spread)之發光二極體條結構;以及第4圖繪示了配置有第3圖之發光二極體條之背光單元的結構。
於下文中,本揭露將以實施例方式詳細解說,然而以下實施例或範例僅為解說之用,而非用以限定本揭露之範疇。
依據本揭露之一實施例,背光單元係藉由包括如第1圖所示之添加稀土金屬氧化物奈米粒子之發光二極體封裝體而製備。
依據本揭露之另一實施例,添加稀土金屬氧化物奈米粒子之發光二極體封裝體(100)係使用包括:如第2圖所示之於陶瓷基板(110)之一導線架(120)上應用一黏著劑之一第一步驟製程;安裝單一發光二極體晶片(130)至導線架(120)上之一第二步驟製程;使用如金線之導線架(120)與發光二極體晶片(130)之間電性聯結用之一銲線(140)連結導線架(120)與發光二極體晶片(130)之一第三製程步驟;以及使用添加稀土金屬氧化物奈米粒子(220)之一封裝材料(210)覆蓋該導線架(120)、發光二極體晶片(130)與銲線(140)之一第四製程步驟,以保護發光二極體晶片(130)與銲線(140)並控制發散角(angle of beam spread)之製程所製造。
依據本揭露之另一實施例,添加稀土金屬氧化物奈米粒子(220)之封裝材料(210)係藉由添加由熱分解稀土金屬鹽類與有機材料而得到之粒子至如環氧基樹脂或矽膠基樹脂之可形成一發光二極體封裝層之一聚合物樹脂而製備。可選擇自苯酚基樹脂、壓克力基樹脂、聚苯乙烯樹脂、聚胺酯樹脂、苯代三聚氰銨樹脂與環氧基樹脂與矽膠基樹脂中之一型或多
型作為聚合物樹脂。
依據本揭露之稀土金屬氧化物奈米粒子如下所示:[化學式1]:Ma(OH)b(CO3)cOd
其中M為鈧、釔、鑭、鋁、鎦、鎵、鋅、釩、鋯、鈣、鍶、鋇、錫、錳、鉍、或錒,而a為1或2、b為0至2、c為0至3、及d為0至3。
然而b與c不同時為零。
依據本揭露,稀土金屬氧化物奈米粒子包括至少一或多個稀土金屬,而粒子較佳地具有1.5n2.5之範圍內之一折射率,而粒子之尺寸較佳地設定為介於10奈米至1微米之範圍內。
關於稀土金屬氧化物奈米粒子之含量,其含量較佳地約為相較於全部封裝材料之2重量百分率至20重量百分率。由於於包含添加稀土金屬氧化物之發光二極體封裝體之背光單元中,以下實施例與比較實施例內之發光二極體藍色晶片、發散角的X方向與Y方向光之相對速度(流明)及相對背光單元亮度為顯著劣化的,故上述含量範圍以外的稀土金屬氧化物並非優選的。
本揭露之另一實施例中,藉由沉浸(immersing)鹼金屬鹽、二價金屬鹽或其組合與所需之稀土金屬鹽而準備粉末。
於化學式1之稀土金屬氧化物奈米粒子內,此些粒子之折射率較佳地為1.5n2.5,而當折射率係低於1.5或高於
2.5時,可能無法得到增加光汲出效率的效果。其係由於常用之矽膠封裝材料具有約為1.5之折射率的事實,而氮化鎵晶片具有約為2.4之折射率。此外,粒子之尺寸較佳地設定為介於10奈米至1微米之範圍。然而,當粒子尺寸位於前述範圍以外時,可能會減少光汲出效率。此外,雖然會依照波長或粒子類型而有些不同,呈現了依照粒子尺寸之光汲出效率之最佳範圍,且因此粒子尺寸的範圍可為關於光汲出效率之非常重要條件。可以參照下述之實施例與測試實施例而理解關於其之更多描述。
依據本揭露之一實施例,第3圖繪示了控制發散角之一發光二極體條(300),而此發光二極體條包括了一印刷電路板(下稱PCB,310)以及安裝於上表面作為發光二極體光源之數個發光二極體封裝體(100)。依據第3圖,發光二極體封裝體(100)繪示為位於印刷電路板的上表面上依照發光面向上之型態而安裝,但當於需要時也可安裝在側面上。
如第4圖所示,繪示了配備有控制發散角之發光二極體條之背光單元之一結構。依據第4圖,本揭露內使用的背光單元繪示為如側光型之背光單元,並包括了一導光板(430)與位於導光板(430)之側邊上之一發光二極體條(300)。於第4圖中,發光二極體條僅提供於導光板(430)之一側面上,然而,於需要時,發光二極體條可提供於兩個側面之上。於導光板(430)之底部,可更提供有底蓋或模塑框件(410)及為光學性附加材料之反射板或片(420)。於本實施例中所採用之發光二極體條可理解為具有與第3圖之發光二極體條(300)之相似結構。換句話
說,發光二極體條(300)包括印刷電路板(310)與安裝於板的頂面上的數個發光二極體光源,並使用了前述之發光二極體封裝體(100)作為發光二極體光源。
於導光板(430)之上,形成有數個光學片或擴散與稜鏡片(440)以及頂蓋或保護片(450)。換句話說,於背光單元內之確切發光的物體為例如螢光燈之冷陰極螢光(CCFL),而當光線自燈具發出時,藉由反射逃脫至底部之光線而降低光線損失之反射板或片(420)係設置於下方層,並位於燈具的上方層上,依照螢幕尺寸而接收出射光並均勻地分佈光線至整個區域之導光板(430)位於其上層,藉由再次散射自導光板(430)表面逃脫之光線而均勻地擴散光線至導光板(430)之整個表面之數個光學片或擴散片(440)係設置於其上方層上。如前述之依照面板尺寸均勻地擴散的光線成為清楚亮度之光線,同時穿透光學片或稜鏡片(440)。當模塑框件連結於為用於操作安裝於依照上下顛倒方式上下顛倒地堆疊光學構件之背光單元上燈具之驅動器之逆變器(inverter)時,便完成了此背光單元。
於下文中,本揭露將參考實施例進行描述,然而,此些實施例係描述本發明之用,並非以此些實施例限制本發明。
實施例
實施例1:
於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至
5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)內添加Y(OH)CO3粒子(98重量百分率之矽膠基樹脂:2重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。
實施例2:
於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)內添加Y(OH)CO3粒子(96重量百分率之矽膠基樹脂:4重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。
實施例3:
於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於
70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)內添加Y(OH)CO3粒子(95重量百分率之矽膠基樹脂:5重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。
實施例4:
於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)內添加Y(OH)CO3粒子(90重量百分率之矽膠基樹脂:10重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。
實施例5:
於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE
6631B)內添加Y(OH)CO3粒子(80重量百分率之矽膠基樹脂:20重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。
比較實施例
如實驗例1般製備一封裝組成物,除了沒有添加稀土金屬氧化物奈米粒子而將矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)置於一均質機內而均質化。
放置實施例1-5及比較實施例之封裝組成物於具有藍光發光二極體(波長為450奈米)晶片之發光二極體封裝體內,並量測亮度。於使用之發光二極體封裝體中,藉由晶片接合使發光二極體晶片連結於導線架作為一發光源。發光二極體晶片以及導線架係透過金屬銲線接合而電性連結,並接著用為透明封裝材料且包括分散於其內之無機奈米粒子之包含矽膠樹脂之封裝體進行模塑。於以下表1中顯示了本發明中於包括發光二極體封裝體之背光單元內依照全部封裝材料之0%、2%、4%、5%、10%與20%而添加此500奈米稀土金屬氧化物奈米粒子後,藍光發光二極體晶片、X方向與Y方向的發散角、光的相對速度(流明)及相關的背光單元的亮度的量測結果。
包括本揭露之包含稀土金屬氧化物球狀粒子之發光二極體封裝體之背光單元可以控制發散角,且可預期光入射強度的增加。
換句話說,發散角可藉由塗佈稀土金屬氧化物球型粒子而得到,而光入射效率為來自導光板之光線相較於來自發光二極體條之光線的相對值,且通常照射至位於發光二極體條內導光板之光線具有非100%的數值。此係由於LED條與導光板之間的間隙、折射率的差異、至導光板的入射光的發散角的角度差異或類似情形。可以確認的是,於本揭露中藉由發散角自120度至110度而減少10度,光入射效率增加約1%。
綜上所述,本揭露已參照實施例而進行解說。然而,可以理解的是本領域之通常技藝者可於不偏離申請專利範圍中之本揭露技術構想的範疇內多樣地修正與改變本揭露。
Claims (5)
- 一種背光單元,包括:一發光二極體封裝體,塗佈有一封裝材料,其中該封裝材料添加有相對於該封裝材料全部之2重量百分率至20重量百分率之10奈米至1微米之稀土金屬氧化物奈米粒子。
- 如申請專利範圍第1項所述之背光單元,其中添加稀土金屬氧化物奈米粒子之該封裝材料係藉由添加由熱分解稀土金屬鹽類與有機材料而得到之粒子至環氧基樹脂或矽膠基樹脂之可形成一發光二極體封裝層之一樹脂而製備。
- 如申請專利範圍第1項所述之背光單元,其中該稀土金屬氧化物奈米粒子具有以下化學式1之組成物:[化學式1]:Ma(OH)b(CO3)cOd其中M為鈧、釔、鑭、鋁、鎦、鎵、鋅、釩、鋯、鈣、鍶、鋇、錫、錳、鉍、或錒,而a為1或2、b為0或2、c為0至3、及d為0至3,然而b與c不同時為零。
- 如申請專利範圍第1項所述之背光單元,其中該稀土金屬氧化物奈米粒子具有介於1.5n2.5之範圍內之一折射率。
- 一種包含一發光二極體封裝體之背光單元之製造方法,其中該發光二極體封裝體係由以下製程所製備:於一導線架上應用一黏著劑之一第一步驟製程;設置單一發光二極體晶片至該導線架上之一第二步驟製程;使用一銲線電性連結該導線架與該發光二極體晶片之一第 三製程步驟;以及使用一封裝材料覆蓋該導線架、該發光二極體晶片、與該銲線之一第四製程步驟,其中該封裝材料添加相對於該封裝材料全部之2重量百分率至20重量百分率之10奈米至1微米粒子尺寸之稀土金屬氧化物奈米粒子,以保護該發光二極體晶片與該銲線並控制一發散角。
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KR100900620B1 (ko) * | 2007-02-20 | 2009-06-02 | 삼성전기주식회사 | 백색 발광 장치 |
JP2015005606A (ja) * | 2013-06-20 | 2015-01-08 | スタンレー電気株式会社 | 光電子デバイス |
KR101571974B1 (ko) * | 2014-06-12 | 2015-12-07 | 주식회사 효성 | 희토류 금속 산화물 입자를 포함하는 녹색 led 패키지 |
-
2017
- 2017-01-09 WO PCT/KR2017/000291 patent/WO2017131360A2/ko active Application Filing
- 2017-01-24 TW TW106102582A patent/TW201739841A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2017131360A3 (ko) | 2018-08-02 |
WO2017131360A2 (ko) | 2017-08-03 |
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