WO2017131360A2 - 희토류 금속 산화물이 첨가된 led 패키지를 적용한 백라이트 유닛 - Google Patents

희토류 금속 산화물이 첨가된 led 패키지를 적용한 백라이트 유닛 Download PDF

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Publication number
WO2017131360A2
WO2017131360A2 PCT/KR2017/000291 KR2017000291W WO2017131360A2 WO 2017131360 A2 WO2017131360 A2 WO 2017131360A2 KR 2017000291 W KR2017000291 W KR 2017000291W WO 2017131360 A2 WO2017131360 A2 WO 2017131360A2
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WO
WIPO (PCT)
Prior art keywords
rare earth
earth metal
metal oxide
led
backlight unit
Prior art date
Application number
PCT/KR2017/000291
Other languages
English (en)
French (fr)
Korean (ko)
Other versions
WO2017131360A3 (ko
Inventor
류정곤
김영식
고다현
임서영
Original Assignee
주식회사 효성
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 효성 filed Critical 주식회사 효성
Publication of WO2017131360A2 publication Critical patent/WO2017131360A2/ko
Publication of WO2017131360A3 publication Critical patent/WO2017131360A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/247—Carbonates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Definitions

  • the present invention relates to a backlight unit (Back Light Unite, hereinafter referred to as 'BLU') to which a light emitting diode (LED) package in which rare earth metal oxide is added is applied. More specifically, the present invention relates to an LED package containing an encapsulating resin and a rare earth metal oxide of an LED package having improved light extraction efficiency, and a BLU to which the same is applied.
  • 'BLU' Back Light Unite
  • LED light emitting diode
  • LED which is a light emitting device
  • LED is a kind of semiconductor used to send and receive signals by converting electricity into infrared rays or light using characteristics of compound semiconductors, and is used in home appliances, remote controls, electronic displays, indicators, and various automation devices.
  • LED is also applied to the display.
  • LCDs liquid crystal displays
  • AMOLEDs unlike self-emitting AMOLEDs, they do not emit light by themselves, so a separate light source is required. This is called a BLU.
  • the BLU serves to illuminate the display image evenly so that the display image is visible from the back of the LCD which does not emit light.
  • This BLU uses a direct-lit BLU, a method of evenly arranging the LED BLU behind the LCD panel, and uses the LED BLU at the left and right corners to distribute the light from the LED evenly throughout the screen.
  • Edge type (Edge-lit BLU) is a method that reflects the reflection, but the edge type is more advantageous for slimming, which is a recent issue.
  • the present invention is to reduce the light guide plate in the BLU, while maintaining the amount of light, and to increase the efficiency (light efficiency) of the light entering the light guide plate, to adjust the angle of incidence (angle of light emitted) from the LED package to the light guide plate, It is an object of the present invention to provide a BLU to which an LED package to which rare earth metal oxide nanoparticles are added, which can exhibit high luminance of BLU by improving efficiency.
  • a BLU is obtained by applying an LED package to which rare earth metal oxide nanoparticles are added.
  • the manufacture of the LED package to which the rare earth metal oxide nanoparticles are added comprises a first step of applying an adhesive to the lead frame; A second step of mounting the individual LED chips on the lead frame; A third step of attaching the lead frame to the LED chip by using a wire such as a gold wire to be electrically connected; And a fourth step of covering the encapsulant to which the rare earth metal oxide nanoparticles are added in order to protect the LED chip and the wire and to adjust the orientation angle.
  • the rare earth metal oxide nanoparticles are added to the encapsulant is a particle produced by the thermal decomposition of the rare earth metal salt and the organic material typically forms an LED encapsulation layer, such as epoxy resin or silicone resin. It is manufactured by adding to the resin which can be made.
  • the rare earth metal oxide nanoparticles have a refractive index of 1.5 ⁇ n ⁇ 2.5, and the size of the particles is preferably in the range of 10 nm to 1 ⁇ m.
  • BLU to which the LED package to which the rare earth metal oxide nano-spherical particles of the present invention is applied can adjust the direction angle, and thus can increase the luminous efficiency.
  • the direction angle is possible by applying rare earth metal oxide spherical particles, and the light incidence efficiency is a relative amount of light emitted through the light guide plate relative to the light emitted from the LED bar.
  • light incident from the LED bar to the light guide plate is 100. This value is not%, due to the gap between the LED bar and the light guide plate, the difference in the refractive index, and the difference in the light directivity angle entering the light guide plate. In the present invention, it was confirmed that the light incident efficiency increased by about 1% by decreasing the directivity angle from 120 degrees to 110 degrees.
  • 1 is a SEM photograph of spherical rare earth metal oxide nanoparticles added to an LED package according to the present invention.
  • Figure 2 illustrates the structure of the LED package to which the spherical rare earth metal oxide nanoparticles according to the present invention is applied.
  • FIG. 3 illustrates the structure of the LED bar to which the LED package of FIG.
  • FIG. 4 illustrates a structure of a BLU equipped with the LED bar of FIG. 3.
  • the BLU is made by applying an LED package to which rare earth metal oxide nanoparticles are added as shown in FIG. 1.
  • the LED package 100 to which the rare earth metal oxide nanoparticles are added is the first to apply the adhesive to the lead frame 120 of the ceramic substrate 110 as illustrated in FIG. Step process; A second step of mounting the individual LED chips 130 on the lead frame 120; A third step of attaching the lead frame 120 to the LED chip 130 using a bonding wire 140 such as a gold wire to be electrically connected; And a fourth step of covering the encapsulant 210 to which the rare earth metal oxide nanoparticles 220 are added in order to protect the LED chip 130 and the bonding wire 140 and to adjust the direction angle.
  • the rare earth metal oxide nanoparticles 220 is added to the encapsulant 210 is a particle produced by thermal decomposition of the rare earth metal salt and the organic material, such as epoxy resin or silicone resin Usually, it is added to the polymer resin capable of forming the LED encapsulation layer.
  • the polymer resin may be used by selecting one or more of a phenol resin, an acrylic resin, a polystyrene resin, a polyurethane resin, and a benzoguanamine resin.
  • the rare earth metal oxide nanoparticles according to the present invention are as follows.
  • M is Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi, or Ac
  • a is 1 or 2
  • b is 0-2
  • c is 0-3
  • d is 0-3.
  • the rare earth metal oxide nanoparticles include at least one or more of the rare earth metals, and the refractive index of the particles is preferably 1.5 ⁇ n ⁇ 2.5, the size of the particles is set in the range of 10nm to 1 ⁇ m desirable.
  • the content of the rare earth metal oxide about 2% to 20% by weight is preferable for the entire encapsulant.
  • the properties of the LED blue chip, the x direction and the y direction direction angle, the relative luminous flux (lm), and the BLU relative brightness in the backlight unit to which the LED package is added are the following embodiments. And as it is considerably lowered as in comparison.
  • the powder may be prepared by impregnating an alkali metal salt, a + 2-valent metal salt, or a combination thereof as necessary in addition to the rare earth metal salt.
  • the refractive index of the particles in the rare earth metal oxide nanoparticles of the above formula is preferably 1.5 ⁇ n ⁇ 2.5, but if less than 1.5 or more than 2.5, there may be no effect of increasing light extraction efficiency. This is because the refractive index of a typical silicon encapsulant is about 1.5 and the refractive index of a GaN chip is about 2.4.
  • the particle size is preferably set in the range of 10nm to 1 ⁇ m. However, when the particle size is out of the range, the light extraction efficiency may decrease.
  • the range of the particle size may be a very important configuration in terms of light extraction efficiency. A more detailed description thereof will be understood with reference to the following Examples and Experimental Examples.
  • Figure 3 shows the LED bar 300, the direction angle is adjusted to a printed circuit board (Printed Circuit Boaed, hereinafter referred to as 'PCB', 310) and the LED mounted on the upper surface
  • 'PCB' printed circuit board
  • the LED package 100 is illustrated in a form in which the light emitting surface is upwardly disposed on the upper surface of the PCB, but may be mounted on the side if necessary.
  • the BLU used in the present invention exemplifies an edge type BLU, for example, and includes a light guide plate 430 and an LED bar 300 provided on one side of the light guide plate 430.
  • the LED bar is provided only on one side of the light guide plate 430, but may be provided on both sides as needed.
  • a bottom cover or mold frame 410 and a reflective plate or sheet 420, which is an optical subsidiary material, may be additionally provided below the light guide plate 430.
  • LED bar employed in this embodiment can be understood as a similar structure to the LED bar 300 of FIG. That is, the LED bar 300 includes a PCB 310 and a plurality of LED light sources mounted on an upper surface of the substrate, and the LED package 100 described above is applied as the LED light source.
  • the upper portion of the light guide plate 430 includes a plurality of optical sheets or diffusion and prism sheets 440, a top cover or a protective sheet 450.
  • it is actually a cold cathode fluorescent lamp (CCFL) such as a fluorescent lamp that actually emits light inside the BLU, and when light is emitted from the lamp, a reflector or sheet 420 reflects light exiting below and reduces light loss.
  • CCFL cold cathode fluorescent lamp
  • the light emitting plate 430 receives light emitted from the upper layer of the lamp and uniformly distributes the light in all areas according to the screen size, and scatters the light exiting from the surface of the light guide plate 430 once again from the upper layer.
  • a plurality of optical sheets or diffusion sheets 440 are disposed in front of the light guide plate 430 to distribute the light evenly.
  • the light uniformly diffused according to the panel size passes through the optical sheet or prism sheet 440 and becomes brighter light.
  • the BLU is completed when the optical material is connected to an inverter, which is a drive device for driving a lamp mounted on the BLU in a mold frame in a top-down manner in which the optical material is piled up and down.
  • Silicone resin After the addition of Y (OH) CO 3 particles in (OE 6631 A and OE 6631 B 1 Mix 2 ratio) (80% by weight of a silicone-based resin, Y (OH) CO 3 20% by weight), it The homogenizer was put into a homogenizer to prepare an encapsulant composition.
  • the encapsulant composition was prepared by homogenizing a silicone-based resin (a mixture of OE 6631 A and OE 6631 B in a ratio of 1: 2) without using rare earth metal oxide nanoparticles in a homogenizer.
  • the sealing material composition of the said Examples 1-5 and the comparative example was mounted in the LED package provided with a blue LED (wavelength 450 nm) chip, and the luminance was measured.
  • the light emitting device package used is a light emitting source using a chip connected by die bonding on a lead frame. After the metal wire bonding is performed so that the light emitting device and the lead frame are electrically connected, the transparent sealing material is molded with an encapsulant in which the silicone resin and the inorganic nanoparticles are dispersed.
  • X-direction, y-direction direction angle, relative luminous flux (lm), BLU relative luminance measurement results are shown in Table 1 below.
  • LED package 110 substrate
  • encapsulant 220 rare earth metal oxide particles
  • LED bar 310 printed circuit board (PCB)

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Geology (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
PCT/KR2017/000291 2016-01-29 2017-01-09 희토류 금속 산화물이 첨가된 led 패키지를 적용한 백라이트 유닛 WO2017131360A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0011998 2016-01-29
KR20160011998 2016-01-29

Publications (2)

Publication Number Publication Date
WO2017131360A2 true WO2017131360A2 (ko) 2017-08-03
WO2017131360A3 WO2017131360A3 (ko) 2018-08-02

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PCT/KR2017/000291 WO2017131360A2 (ko) 2016-01-29 2017-01-09 희토류 금속 산화물이 첨가된 led 패키지를 적용한 백라이트 유닛

Country Status (2)

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TW (1) TW201739841A (zh)
WO (1) WO2017131360A2 (zh)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4855869B2 (ja) * 2006-08-25 2012-01-18 日亜化学工業株式会社 発光装置の製造方法
KR100855556B1 (ko) * 2006-12-22 2008-09-01 주식회사 루멘스 발광다이오드
KR100900620B1 (ko) * 2007-02-20 2009-06-02 삼성전기주식회사 백색 발광 장치
JP2015005606A (ja) * 2013-06-20 2015-01-08 スタンレー電気株式会社 光電子デバイス
KR101571974B1 (ko) * 2014-06-12 2015-12-07 주식회사 효성 희토류 금속 산화물 입자를 포함하는 녹색 led 패키지

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TW201739841A (zh) 2017-11-16
WO2017131360A3 (ko) 2018-08-02

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