TW201728439A - 積層體及併合體、組合之回收方法、半導體裝置之製造方法 - Google Patents

積層體及併合體、組合之回收方法、半導體裝置之製造方法 Download PDF

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Publication number
TW201728439A
TW201728439A TW105136610A TW105136610A TW201728439A TW 201728439 A TW201728439 A TW 201728439A TW 105136610 A TW105136610 A TW 105136610A TW 105136610 A TW105136610 A TW 105136610A TW 201728439 A TW201728439 A TW 201728439A
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Taiwan
Prior art keywords
back surface
protective film
adhesive layer
surface protective
semiconductor back
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Application number
TW105136610A
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English (en)
Inventor
Ryuichi Kimura
Naohide Takamoto
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Nitto Denko Corp
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Publication of TW201728439A publication Critical patent/TW201728439A/zh

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Abstract

本發明提供一種可防止切割後半導體背面保護膜彼此密接之積層體等。 本發明係關於一種積層體，其包含雙面黏著片及配置於雙面黏著片上之半導體背面保護膜。雙面黏著片包含第1黏著劑層、第2黏著劑層及基材層。基材層位於第1黏著劑層與第2黏著劑層之間。第1黏著劑層具有藉由加熱而剝離力降低之性質。第1黏著劑層位於半導體背面保護膜與基材層之間。

Description

積層體及併合體、組合之回收方法、半導體裝置之製造方法
本發明係關於一種積層體、併合體、組合之回收方法及半導體裝置之製造方法。
半導體背面保護膜承擔抑制半導體晶圓之翹曲之作用、保護背面之作用。 已知有一體化地處理半導體背面保護膜及切割帶之方法。例如，藉由於固定於切割帶上之半導體背面保護膜固定半導體晶圓，藉由切割而形成包含晶片及切割後半導體背面保護膜之組合，利用針形件上推切割帶而擴張切割帶，自切割帶上剝離組合之方法。 先前技術文獻 專利文獻 專利文獻1：日本專利特開2012-33636號公報
[發明所欲解決之問題] 於上述方法中，有時切割後半導體背面保護膜彼此密接直至拾取為止。其原因為，於擴張切割帶之後切割帶收縮(相鄰之切割後半導體背面保護膜之間之距離變短)。若切割後半導體背面保護膜彼此密接，則拾取之成功率降低。 本發明之目的之一在於提供可防止切割後半導體背面保護膜彼此密接之積層體。本發明之目的之一在於提供可防止切割後半導體背面保護膜彼此密接之併合體。本發明之目的之一在於提供可防止切割後半導體背面保護膜彼此密接之方法。 [解決問題之技術手段] 本發明係關於一種包含雙面黏著片及配置於雙面黏著片上之半導體背面保護膜之積層體。雙面黏著片包含第1黏著劑層、第2黏著劑層及基材層。基材層位於第1黏著劑層與第2黏著劑層之間。第1黏著劑層具有藉由加熱而剝離力降低之性質。第1黏著劑層位於半導體背面保護膜與基材層之間。 於將硬質之支持體固定於第2黏著劑層並對半導體晶圓進行切割時，能夠防止相鄰之切割後半導體背面保護膜彼此密接。其原因無，硬質之支持體不會發生收縮。而且，能夠不擴張地自雙面黏著帶上剝離組合。其原因為第1黏著劑層具有藉由熱而剝離力降低之性質。 又，本發明係關於一種包含剝離襯墊及配置於剝離襯墊上之積層體之併合體。 又，本發明係關於一種回收包含半導體晶片及固定於半導體晶片之切割後半導體背面保護膜之組合之方法。組合之回收方法包含如下步驟：於積層體中之半導體背面保護膜固定半導體晶圓(A)；於積層體之第2黏著劑層固定硬質之支持體(B)；藉由對固定於半導體背面保護膜之半導體晶圓進行切割，形成組合(C)；於步驟(C)之後加熱雙面黏著片(D)；及於步驟(D)之後自雙面黏著片剝離組合(E)。 又，本發明係關於一種包含步驟(A)～步驟(E)之半導體裝置之製造方法。半導體裝置之製造方法進而包含將組合固定於被黏著體之步驟(F)。
以下列舉實施形態詳細說明本發明，但本發明並不僅限定於該等實施形態。 [實施形態1] (併合體1) 如圖1及圖2所示，併合體1包含剝離襯墊13及配置於剝離襯墊13上之積層體71a、71b、71c、……、71m(以下統稱為「積層體71」。)。積層體71a與積層體71b之間之距離、積層體71b與積層體71c之間之距離、……積層體71l與積層體71m之間之距離固定。併合體1進而包含分別配置於複數個積層體71上之剝離襯墊14。併合體1可製成卷狀。 積層體71包含雙面黏著片12及配置於雙面黏著片12上之半導體背面保護膜11。 雙面黏著片12包含第1黏著劑層121、第2黏著劑層122及位於第1黏著劑層121與第2黏著劑層122之間之基材層123。第1黏著劑層121位於半導體背面保護膜11與基材層123之間。第1黏著劑層121與半導體背面保護膜11相接。第1黏著劑層121與基材層123相接。雙面黏著片12之雙面可由第1面及與第1面相向之第2面定義。雙面黏著片12之第1面係與半導體背面保護膜11相接之面。 半導體背面保護膜11與雙面黏著片12之剝離力(23℃、剝離角度180度、剝離速度300 mm/分鐘)較佳為0.05 N/20mm～5 N/20mm。若為0.05 N/20mm以上，則於切割時半導體背面保護膜11難以自雙面黏著片12上剝離。 (第1黏著劑層121) 第1黏著劑層121具有藉由加熱而剝離力降低之性質。例如為藉由加熱而發泡之性質。發泡後可簡單地自雙面黏著片12上剝離半導體背面保護膜11。 第1黏著劑層121可由以於常溫至150℃之溫度區域中之動態彈性模數為5萬～1000萬dyn/cm2 之聚合物作為基礎聚合物之黏著劑形成。例如係將以(甲基)丙烯酸烷基酯之1種或2種以上作為單體成分使用之丙烯酸系聚合物作為基礎聚合物之丙烯酸系黏著劑。 第1黏著劑層121包含熱膨脹性微球。熱膨脹性微球具有藉由加熱而膨脹之性質。熱膨脹性微球膨脹後，可簡單地自雙面黏著片12剝離半導體背面保護膜11。其原因為第1黏著劑層121發生變形。熱膨脹性微球可由藉由加熱而變為氣體之物質及內含藉由加熱而變為氣體之物質之微膠囊構成。藉由加熱而變為氣體之物質例如為異丁烷、丙烷、戊烷等。微膠囊可由高分子構成。例如為偏二氯乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯醇縮丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏二氯乙烯、聚碸等。其中較佳為熱塑性高分子。熱膨脹性微球之市售品為松本油脂製藥公司製造之microsphere等。 熱膨脹性微球之加熱膨脹之開始溫度較佳為90℃以上。若為90℃以上，則直至拾取步驟為止第1黏著劑層121難以發生因受熱所致之膨脹。熱膨脹性微球之體積膨脹率較佳為5倍以上、更佳為7倍以上、進而較佳為10倍以上。熱膨脹性微球之平均粒徑較佳為100 μm以下、更佳為80 μm以下、進而較佳為50 μm以下。熱膨脹性微球之平均粒徑之下限例如為1 μm。相對於100重量份基礎聚合物，熱膨脹性微球之含量較佳為1重量份以上、更佳為10重量份以上、進而較佳為25重量份以上。相對於100重量份基礎聚合物，熱膨脹性微球之含量較佳為150重量份以下、更佳為130重量份以下、進而較佳為100重量份以下。 第1黏著劑層121之厚度較佳為2 μm以上、更佳為5 μm以上。第1黏著劑層121之厚度較佳為300 μm以下、更佳為200 μm以下、進而較佳為150 μm以下。 (第2黏著劑層122) 第2黏著劑層122由丙烯酸系黏著劑等黏著劑形成。第2黏著劑層122不具有藉由加熱而膨脹之性質。第2黏著劑層122之厚度較佳為2 μm以上、更佳為5 μm以上。第2黏著劑層122之厚度較佳為300 μm以下、更佳為200 μm以下、進而較佳為150 μm以下。 (基材層123) 基材層123較佳具有雷射透射之性質(以下稱為「雷射透射性」。)。可越過基材層123對半導體背面保護膜11照射雷射。 基材層123之厚度較佳為1 μm以上、更佳為10 μm以上、進而較佳為20 μm以上、進而更佳為30 μm以上。基材層123之厚度較佳為1000 μm以下、更佳為500 μm以下、進而較佳為300 μm以下、進而更佳為200 μm以下。 (半導體背面保護膜11) 半導體背面保護膜11之雙面可由第1主面及與第1主面相向之第2主面定義。第1主面與第1黏著劑層121相接。第2主面與剝離襯墊13相接。 半導體背面保護膜11有顏色。若有顏色，便可簡單地區別雙面黏著片12及半導體背面保護膜11。半導體背面保護膜11較佳為例如黑色、藍色、紅色等深色。尤其以黑色為佳。其原因為易於視認雷射標記。 深色基本上係指L* a* b* 色彩系統中規定之L* 為60以下(0～60)[較佳為50以下(0～50)、更佳為40以下(0～40)]之較深之色。 又，黑色基本上係指L* a* b* 色彩系統中規定之L* 為35以下(0～35)[較佳為30以下(0～30)、更佳為25以下(0～25)]之黑色系顏色。再者，黑色中，L* a* b* 色彩系統中規定之a* 、b* 可分別根據L* 之值進行適宜選擇。作為a* 、b* ，較佳為例如兩者均較佳為-10～10、更佳為-5～5，尤佳為-3～3之範圍(尤其係0或幾乎為0)。 再者，L* a* b* 色彩系統中規定之L* 、a* 、b* 藉由使用色彩色差計(商品名「CR-200」MINOLTA公司製造；色彩色差計)進行測定而求得。再者，L* a* b* 色彩系統係國際照明委員會(CIE)於1976年推薦之色彩空間，係被稱為CIE1976(L* a* b* )色彩系統之色彩空間。又，L* a* b* 色彩系統於日本工業規格中於JIS Z 8729中有所規定。 於85℃及85%RH之氣氛下放置168小時時之半導體背面保護膜11之吸濕率較佳為1重量%以下、更佳為0.8重量%以下。藉由為1重量%以下，能夠提高雷射標識性。吸濕率可藉由無機填充劑之含量等進行控制。半導體背面保護膜11之吸濕率之測定方法如下所示。即，於85℃、85%RH之恆溫恆濕槽中將半導體背面保護膜11放置168小時，基於放置前後之重量減少率求出吸濕率。 半導體背面保護膜11為未硬化狀態。未硬化狀態包含半硬化狀態。較佳為半硬化狀態。 將藉由使半導體背面保護膜11硬化而得到之硬化物於85℃及85%RH之氣氛下放置168小時時之吸濕率較佳為1重量%以下、更佳為0.8重量%以下。藉由為1重量%以下，能夠提高雷射標識性。吸濕率可藉由無機填充劑之含量等進行控制。硬化物之吸濕率之測定方法如下所示。即，於85℃、85%RH之恆溫恆濕槽中將硬化物放置168小時，基於放置前後之重量減少率求出吸濕率。 半導體背面保護膜11中之揮發成分之比例越少越好。具體而言，加熱處理後之半導體背面保護膜11之重量減少率(重量減少量之比例)較佳為1重量%以下、更佳為0.8重量%以下。加熱處理之條件為例如250℃加熱1小時。若為1重量%以下，則雷射標識性良好。能夠抑制回焊步驟中裂紋之產生。重量減少率係指對熱硬化後之半導體背面保護膜11進行250℃、1小時加熱時之值。 半導體背面保護膜11之未硬化狀態下之23℃之拉伸儲能彈性模數較佳為1 GPa以上、更佳為2 GPa以上、進而較佳為3 GPa以上。若為1 GPa以上，則能夠防止半導體背面保護膜11附著於載帶。23℃之拉伸儲能彈性模數之上限例如為50 GPa。23℃之拉伸儲能彈性模數可藉由樹脂成分之種類、其含量、填充材料之種類、其含量等進行控制。使用Rheometrics Co., Ltd.製造之動態黏彈性測定裝置「Solid Analyzer RS A2」，藉由拉伸模式，於樣品寬度：10 mm、樣品長度：22.5 mm、樣品厚度：0.2 mm、頻率：1 Hz、升溫速度：10℃/分鐘、氮氣氣氛下、特定之溫度(23℃)來測定拉伸儲能彈性模數。 半導體背面保護膜11中之可見光(波長：380 nm～750 nm)之透光率(可見光透射率)並無特別限制，例如較佳為20%以下(0%～20%)之範圍、更佳為10%以下(0%～10%)、尤佳為5%以下(0%～5%)。半導體背面保護膜11之可見光透射率大於20%時，存在因光線通過而對半導體晶片產生不良影響之虞。又，可見光透射率(%)可藉由半導體背面保護膜11之樹脂成分之種類、其含量、著色劑(顏料、染料等)之種類、其含量、無機填充材料之含量等進行控制。 半導體背面保護膜11之可見光透射率(%)可如下所示進行測定。即，製作厚度(平均厚度)20 μm之半導體背面保護膜11單體。然後，以特定強度對半導體背面保護膜11照射波長：380 nm～750 nm之可見光線[裝置：島津製作所製之可見光發生裝置(商品名「ABSORPTION SPECTRO PHOTOMETER」)]，測定透射之可見光線之強度。進而，可根據可見光線透射半導體背面保護膜11前後之強度變化求出可見光透射率之值。 半導體背面保護膜11較佳含有著色劑。著色劑例如為染料、顏料。其中較佳為染料、更佳為黑色染料。 半導體背面保護膜11中之著色劑之含量較佳為0.5重量%以上、更佳為1重量%以上、進而較佳為2重量%以上。半導體背面保護膜11中之著色劑之含量較佳為10重量%以下、更佳為8重量%以下、進而較佳為5重量%以下。 半導體背面保護膜11可含有熱塑性樹脂。作為熱塑性樹脂，例如可列舉天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍、6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET(聚對苯二甲酸乙二酯)、PBT(聚對苯二甲酸丁二酯)等飽及聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。熱塑性樹脂可單獨使用或併用2種以上。其中較佳為丙烯酸系樹脂、苯氧基樹脂。 半導體背面保護膜11中之熱塑性樹脂之含量較佳為10重量%以上、更佳為30重量%以上。半導體背面保護膜11中之熱塑性樹脂之含量較佳為90重量%以下、更佳為70重量%以下。 半導體背面保護膜11可含有熱硬化性樹脂。作為熱硬化性樹脂，可列舉環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺酯樹脂、矽酮樹脂、熱硬化性聚醯亞胺樹脂等。熱硬化性樹脂可單獨使用或併用2種以上。作為熱硬化性樹脂，尤其以較少含有腐蝕半導體晶片之離子性雜質等之環氧樹脂為佳。又，作為環氧樹脂之硬化劑較佳可使用酚樹脂。 作為環氧樹脂，並無特別限定，例如可使用雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、溴化雙酚A型環氧樹脂、氫化雙酚A型環氧樹脂、雙酚AF型環氧樹脂、聯苯型環氧樹脂、萘型環氧樹脂、茀型環氧樹脂、苯酚酚醛清漆型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、三羥苯基甲烷型環氧樹脂、四羥苯基乙烷型環氧樹脂等雙官能環氧樹脂、多官能環氧樹脂、或乙內醯脲型環氧樹脂、三縮水甘油基異氰脲酸酯型環氧樹脂或縮水甘油胺型環氧樹脂等環氧樹脂。 進而，酚樹脂作為環氧樹脂之硬化劑發揮作用，例如可列舉苯酚酚醛清漆樹脂、酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚樹脂、甲階型酚樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。酚樹脂可單獨使用或併用2種以上。該等酚樹脂中尤佳為苯酚酚醛清漆樹脂、酚芳烷基樹脂。其原因為能夠使半導體裝置之連接可靠性提高。 環氧樹脂與酚樹脂之調配比例較佳為例如以相對於環氧樹脂中之環氧基1當量，酚樹脂中之羥基成為0.5當量～2.0當量之方式調配。更佳為0.8當量～1.2當量。 半導體背面保護膜11中之熱硬化性樹脂之含量較佳為2重量%以上、更佳為5重量%以上。半導體背面保護膜11中之熱硬化性樹脂之含量較佳為40重量%以下、更佳為20重量%以下。 半導體背面保護膜11可含有熱硬化促進觸媒。例如為胺系硬化促進劑、磷系硬化促進劑、咪唑系硬化促進劑、硼系硬化促進劑、磷-硼系硬化促進劑等。 為了預先使半導體背面保護膜11進行一定程度之交聯，較佳於製作時事先添加與聚合物之分子鏈末端之官能團等反應之多官能性化合物作為交聯劑。藉此，能夠提高於高溫下之接著特性，謀求耐熱性之改善。 半導體背面保護膜11可含有填充劑。較佳為無機填充劑。無機填充劑例如為二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽、鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊料等。填充劑可單獨使用或併用2種以上。其中較佳為二氧化矽、尤佳為熔融二氧化矽。無機填充劑之平均粒徑較佳為0.1 μm～80 μm之範圍內。無機填充劑之平均粒徑例如可藉由雷射繞射型粒徑分佈測定裝置來測定。 半導體背面保護膜11中之填充劑之含量較佳為10重量%以上、更佳為20重量%以上。半導體背面保護膜11中之填充劑之含量較佳為70重量%以下、更佳為50重量%以下。 半導體背面保護膜11可適宜地含有其他添加劑。作為其他添加劑，例如可列舉阻燃劑、矽烷偶合劑、離子捕捉劑、增量劑、防老劑、抗氧化劑、表面活性劑等。 半導體背面保護膜11之厚度較佳為2 μm以上、更佳為4 μm以上、進而較佳為6 μm以上、尤佳為10 μm以上。半導體背面保護膜11之厚度較佳為200 μm以下、更佳為160 μm以下、進而較佳為100 μm以下、尤佳為80 μm以下。 (剝離襯墊14) 剝離襯墊14例如為聚對苯二甲酸乙二酯(PET)薄膜。 (剝離襯墊13) 剝離襯墊13例如為聚對苯二甲酸乙二酯(PET)薄膜。 (半導體裝置之製造方法) 如圖3所示，於積層體71之半導體背面保護膜11上固定半導體晶圓4。具體而言，使用壓接輥等按壓部件於50℃～100℃下將積層體71壓接於半導體晶圓4上。半導體晶圓4之雙面可藉由電路面及與電路面相向之背面(亦稱為非電路面、非電極形成面等)定義。半導體晶圓4例如為矽晶圓。 如圖4所示，將剝離襯墊14剝離，將硬質之支持體8固定於第2黏著劑層122。具體而言，藉由於減壓氣氛下利用平行平板將支持體8按壓於第2黏著劑層122，於第2黏著劑層122固定支持體8。若於減壓氣氛下將支持體8按壓於第2黏著劑層122，則能夠減少氣泡。支持體8製成板狀。較佳為平滑且平坦者。支持體8例如為金屬板、陶瓷板、玻璃板等。支持體8較佳具有雷射透射性。其原因為可越過支持體8對半導體背面保護膜11照射雷射。支持體8之厚度例如為0.1 mm～10 mm。 如圖5所示，藉由對半導體晶圓4進行切割，形成組合5。組合5包含半導體晶片41及固定於半導體晶片41之背面之切割後半導體背面保護膜111。半導體晶片41之雙面可藉由電路面及與電路面相向之背面定義。組合5固定於雙面黏著片12。 使組合5與雙面黏著片12之間之剝離力降低。具體而言，藉由利用當作支持體8之加熱器對雙面黏著片12進行加熱，使剝離力降低。即，藉由加熱而使第1黏著劑層121膨脹。此時，較佳為以較熱膨脹性微球之膨脹開始溫度高50℃以上之高溫進行加熱。例如為100℃～250℃。 藉由減壓吸附筒夾自第1黏著劑層121剝離組合5。即拾取組合5。 如圖6所示，藉由倒裝晶片接合方式(倒裝晶片安裝方式)將組合5固定於被黏著體6。具體而言，於半導體晶片41之電路面與被黏著體6相向之狀態下，將組合5固定於被黏著體6。例如，使半導體晶片41之凸塊51與被黏著體6之導電材料(焊料等)61接觸，一面按壓一面使導電材料61熔融。組合5與被黏著體6之間有空隙。空隙之高度通常為30 μm～300 μm左右。固定後可進行空隙等之清洗。 作為被黏著體6，可使用引線框、電路基板(配線電路基板等)等基板。作為此種基板之材質，並無特別限定，可列舉陶瓷基板、塑膠基板。作為塑膠基板，例如可列舉環氧基板、雙馬來醯亞胺三嗪基板、聚醯亞胺基板等。 作為凸塊或導電材料之材質，並無特別限定，例如可列舉錫-鉛系金屬材料、錫-銀系金屬材料、錫-銀-銅系金屬材料、錫-鋅系金屬材料、錫-鋅-鉍系金屬材料等焊料類(合金)、金系金屬材料、銅系金屬材料等。再者，導電材料61之熔融時之溫度通常為260℃左右。若切割後半導體背面保護膜111含有環氧樹脂，則可耐受該溫度。 用密封樹脂對組合5與被黏著體6之間之空隙進行密封。通常藉由於175℃下進行60秒鐘～90秒鐘之加熱而使密封樹脂硬化。藉由該加熱亦能夠使切割後半導體背面保護膜111熱硬化。 作為密封樹脂，只要係具有絕緣性之樹脂(絕緣樹脂)則無特別限制。作為密封樹脂，更佳為具有彈性之絕緣樹脂。作為密封樹脂，例如可列舉含有環氧樹脂之樹脂組合物等。又，作為利用含有環氧樹脂之樹脂組合物而得到之密封樹脂，作為樹脂成分，除了環氧樹脂以外，亦可含有環氧樹脂以外之熱硬化性樹脂(酚樹脂等)、熱塑性樹脂等。再者，作為酚樹脂，亦可作為環氧樹脂之硬化劑利用。密封樹脂之形狀為膜狀、片狀等。 根據以上之方法而得到之半導體裝置(倒裝晶片安裝之半導體裝置)包含被黏著體6及固定於被黏著體6之組合5。 可藉由雷射於半導體裝置之切割後半導體背面保護膜111上進行印刷。再者，於藉由雷射進行印刷時，可利用公知之雷射標記裝置。又，作為雷射，可利用氣體雷射、固體雷射、液體雷射等。具體而言，作為氣體雷射，並無特別限制，可利用公知之氣體雷射，但較佳為二氧化碳氣體雷射(CO2 雷射)、準分子雷射(ArF雷射、KrF雷射、XeCl雷射、XeF雷射等)。又，作為固體雷射，並無特別限制，可利用公知之固體雷射，但較佳為YAG雷射(Nd：YAG雷射等)、YVO4 雷射。 利用倒裝晶片安裝方式安裝之半導體裝置相較以晶片接合安裝方式安裝之半導體裝置薄且小。因此，可適宜地用作各種電子機器・電子零件或其等之材料・構件。具體而言，作為利用倒裝晶片安裝之半導體裝置之電子機器，可列舉所謂之「行動電話」、「PHS」、小型電腦(例如所謂之「PDA」(移動資訊終端)、所謂之「筆記型電腦」、所謂之「netbook(商標)」、所謂之「可穿戴式電腦」等)、「行動電話」及電腦經一體化而成之小型電子機器、所謂之「digital camera(商標)」、所謂之「數位攝像機」、小型電視機、小型遊戲機器、小型數位音頻播放器、所謂之「電子記事本」、所謂之「電子詞典」、所謂之「電子書籍」用電子機器終端、小型數位型之手錶等可移動型之電子機器(可攜帶之電子機器)等，當然，亦可為除了可移動型以外(設置型等)之電子機器(例如，所謂之「桌上電腦」、平面電視、記錄・再現用電子機器(硬碟記錄器、DVD播放器等)、投影儀、微型機械等)等。又，作為電子零件或電子機器・電子零件之材料・構件，例如可列舉所謂之「CPU」之構件、各種記憶裝置(所謂之「記憶體」、硬碟等)之構件等。 (變化例1) 如圖7所示，雙面黏著片12進而包含非熱膨脹性之第3黏著劑層125。第3黏著劑層125位於第1黏著劑層121與半導體背面保護膜11之間。第3黏著劑層125不具有藉由加熱而膨脹之性質。第3黏著劑層125用於防止熱膨脹性微球膨脹時產生之污染物質(氣體、有機成分等)由第1黏著劑層121移至半導體背面保護膜11。 (變化例2) 如圖8所示，雙面黏著片12進而包含位於第1黏著劑層121與基材層123之間之橡膠狀有機彈性層126。橡膠狀有機彈性層126能夠防止藉由膨脹而於第1黏著劑層121產生之變形擴大至第2黏著劑層122等。橡膠狀有機彈性層126不具有藉由加熱而膨脹之性質。橡膠狀有機彈性層126之主要成分為合成橡膠、合成樹脂等。橡膠狀有機彈性層126之厚度較佳為3 μm以上、更佳為5 μm以上。橡膠狀有機彈性層126之厚度較佳為500 μm以下、更佳為300 μm以下、進而較佳為150 μm以下。 (變化例3) 如圖9所示，第1黏著劑層121之單面整面與半導體背面保護膜11相接。 (變化例4) 於將支持體8固定於第2黏著劑層122後，越過支持體8於半導體背面保護膜11藉由雷射進行印刷。於印刷後形成組合5。 (變化例5) 於形成組合5後，於切割後半導體背面保護膜111藉由雷射進行印刷。於印刷後，對雙面黏著片12進行加熱。 (變化例6) 於對雙面黏著片12進行加熱後，於切割後半導體背面保護膜111藉由雷射進行印刷。於印刷後自第1黏著劑層121剝離組合5。 (其他) 變化例1～變化例6等可任意地組合。 如上所述，實施形態1之組合5之回收方法包含如下步驟：於積層體71中之半導體背面保護膜11固定半導體晶圓4(A)；於積層體71之第2黏著劑層122固定硬質之支持體8(B)；藉由對固定於半導體背面保護膜11之半導體晶圓4進行切割，形成組合5(C)；於步驟(C)之後對雙面黏著片12進行加熱(D)；及於步驟(D)之後自雙面黏著片12剝離組合5之步驟(E)。實施形態1之半導體裝置之製造方法包含步驟(A)～步驟(E)及將組合5固定於被黏著體6之步驟(F)。 [實施例] 以下，例示性地對本發明之較佳實施例進行詳細說明。其中對該實施例所記載之材料、調配量等，除非有特別限定性之記載，否則並非意圖將本發明之範圍僅限於該等實施例。 [半導體背面保護膜之製作] 相對於以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分之丙烯酸酯系聚合物(根上工業公司製造 PARACRON W-197C)之固體成分(除去溶劑之固體成分)100重量份，將環氧樹脂(大日本油墨公司製造 HP-4700)10重量份、酚樹脂(明及化成公司製造 MEH7851-H)10重量份、球狀二氧化矽(Admatechs Co., Ltd.製造 SO-25R 平均粒徑0.5 μm之球狀二氧化矽)85重量份、染料(Orient Chemical Industry Co., Ltd.製造 OIL BLACK BS)10重量份及觸媒(四國化成公司製造 2PHZ)10重量份溶解於甲基乙基酮中，製備固體成分濃度23.6重量%之樹脂組合物之溶液。將樹脂組合物之溶液塗佈於剝離襯墊(經矽酮脫模處理後之厚度50 μm之聚對苯二甲酸乙二酯膜)，於130℃下使其乾燥2分鐘。藉由以上之方法而得到平均厚度20 μm之膜。自膜切取直徑為230 mm之圓盤狀膜(以下於實施例中稱為「半導體背面保護膜」)。 [實施例1] (積層體之製作) 使用手壓輥將半導體背面保護膜附於雙面黏著片「日東電工公司製造 Revalpha 3195V」之熱剝離黏著劑層上，製作實施例1之積層體。實施例1之積層體包含雙面黏著片「日東電工公司製造 Revalpha 3195V」及固定於雙面黏著片「日東電工公司製造 Revalpha 3195V」之熱剝離黏著劑層之半導體背面保護膜。 (評價) 於70℃下將晶圓(經背面研磨處理過之、直徑8英吋厚度0.2 mm之矽鏡面晶圓)壓接於實施例1中之積層體之半導體背面保護膜。藉由利用平行平板將玻璃板按壓於積層體之雙面黏著片「日東電工公司製造 Revalpha 3195V」，於雙面黏著片「日東電工公司製造 Revalpha 3195V」固定玻璃板。藉由對固定於積層體之晶圓進行切割，形成組合(包含矽晶片及固定於矽晶片之切割後半導體背面保護膜)。藉由於120℃下對玻璃板進行加熱，使熱剝離黏著劑層及切割後半導體背面保護膜之界面接著力降低。使用拾取裝置(新川公司製造 SPA-300)，不進行針形件上推地拾取100個組合。成功率越接近100%拾取性越良好。 利用切割裝置：商品名「DFD-6361」DISCO Corporation製造，於以下之條件下切斷晶圓。 切割速度：30 mm/秒 切割刀片： Z1；DISCO Corporation製造「203O-SE 27HCDD」 Z2；DISCO Corporation製造「203O-SE 27HCBB」 切割刀片旋轉速度： Z1；40,000 r/分鐘 Z2；45,000 r/分鐘 切割方式：階梯切割(step cut) 晶圓晶片尺寸：2.0 mm見方 [實施例2] 替代雙面黏著片「日東電工公司製造 Revalpha 3195V」使用了雙面黏著片「日東電工公司製造 Revalpha 3198」，除此以外用與實施例1相同之方法製作實施例2之積層體。實施例2用與實施例1相同之方法評價拾取性。 [比較例1] (切割帶一體型半導體背面保護膜之製作) 使用手壓輥將半導體背面保護膜附於切割帶「日東電工公司製造 V-8-AR」(包含平均厚度65 μm之基材層及平均厚度10 μm之黏著劑層)，製作切割帶一體型半導體背面保護膜。切割帶一體型半導體背面保護膜包含切割帶「日東電工公司製造 V-8-AR」及固定於黏著劑層之半導體背面保護膜。 (評價) 於70℃下將晶圓(經背面研磨處理過之、直徑8英吋厚度0.2 mm之矽鏡面晶圓)壓接於切割帶一體型半導體背面保護膜。藉由對固定於半導體背面保護膜之晶圓進行切割，形成組合(包含矽晶片及固定於矽晶片之切割後半導體背面保護膜)。使用拾取裝置(新川公司製造 SPA-300)，於針形件根數9根、針形件上推量500 μm、上推速度20 mm/秒、上推時間1秒之條件下利用針形件上推組合，自切割帶剝離組合。求出拾取100個組合時之成功率。成功率越接近100%拾取性越良好。 利用切割裝置：商品名「DFD-6361」DISCO Corporation製造，於以下之條件下切斷晶圓。 切割速度：30 mm/秒 切割刀片： Z1；DISCO Corporation製造「203O-SE 27HCDD」 Z2；DISCO Corporation製造「203O-SE 27HCBB」 切割刀片旋轉速度： Z1；40,000r/分鐘 Z2；45,000r/分鐘 切割方式：階梯切割 晶圓晶片尺寸：2.0 mm見方 [表1]
1‧‧‧併合體 4‧‧‧半導體晶圓 5‧‧‧組合 6‧‧‧被黏著體 8‧‧‧支持體 11‧‧‧半導體背面保護膜 12‧‧‧雙面黏著片 13‧‧‧剝離襯墊 14‧‧‧剝離襯墊 41‧‧‧半導體晶片 51‧‧‧凸塊 61‧‧‧導電材料 71‧‧‧積層體 71a、71b、71c、……、71m‧‧‧積層體 111‧‧‧切割後半導體背面保護膜 121‧‧‧第1黏著劑層 122‧‧‧第2黏著劑層 123‧‧‧基材層 125‧‧‧第3黏著劑層 126‧‧‧橡膠狀有機彈性層
圖1係併合體之概略俯視圖。 圖2係併合體之一部分之概略剖視圖。 圖3係半導體裝置之製造步驟之概略剖視圖。 圖4係半導體裝置之製造步驟之概略剖視圖。 圖5係半導體裝置之製造步驟之概略剖視圖。 圖6係半導體裝置之製造步驟之概略剖視圖。 圖7係變化例1中之積層體之概略剖視圖。 圖8係變化例2中之積層體之概略剖視圖。 圖9係變化例3中之併合體之一部分之概略剖視圖。
1‧‧‧併合體
13‧‧‧剝離襯墊
71a、71b、71c、……、71m‧‧‧積層體

Claims (9)

  1. 一種積層體，其包含： 雙面黏著片；及 半導體背面保護膜，其配置於上述雙面黏著片上；且 上述雙面黏著片包含第1黏著劑層、第2黏著劑層及位於上述第1黏著劑層與上述第2黏著劑層之間之基材層， 上述第1黏著劑層位於上述半導體背面保護膜與上述基材層之間， 上述第1黏著劑層具有藉由加熱而剝離力降低之性質。
  2. 如請求項1之積層體，其中上述第1黏著劑層包含藉由加熱而膨脹之熱膨脹性微球。
  3. 如請求項2之積層體，其中上述熱膨脹性微球之加熱膨脹之開始溫度為90℃以上。
  4. 如請求項2之積層體，其中上述熱膨脹性微球之體積膨脹率為5倍以上。
  5. 如請求項2之積層體，其中上述雙面黏著片進而包含非熱膨脹性之第3黏著劑層， 上述第3黏著劑層位於上述第1黏著劑層與上述半導體背面保護膜之間。
  6. 如請求項2之積層體，其中上述雙面黏著片進而包含位於上述第1黏著劑層與上述基材層之間之橡膠狀有機彈性層。
  7. 一種併合體，其包含： 剝離襯墊；及 如請求項1之積層體，其配置於上述剝離襯墊上。
  8. 一種組合之回收方法，其係對包含半導體晶片及固定於上述半導體晶片之切割後半導體背面保護膜之組合進行回收之方法，且包含如下步驟： 於如請求項1至6中任一項之積層體中之上述半導體背面保護膜固定半導體晶圓； 於上述積層體之上述第2黏著劑層固定硬質之支持體； 藉由對固定於上述半導體背面保護膜之上述半導體晶圓進行切割，形成上述組合； 於形成上述組合之步驟之後，對上述雙面黏著片進行加熱；及 於對上述雙面黏著片進行加熱之步驟之後，自上述雙面黏著片剝離上述組合。
  9. 一種半導體裝置之製造方法，其包含將藉由如請求項8之組合之回收方法回收之上述組合固定於被黏著體之步驟。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI797272B (zh) * 2018-03-20 2023-04-01 日商琳得科股份有限公司 加工品之製造方法及黏著性層合體

Families Citing this family (5)

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GB2607247B (en) * 2016-05-11 2023-03-22 Flexenable Ltd Carrier release
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CN109686854B (zh) 2017-10-19 2024-07-02 京东方科技集团股份有限公司 封装结构及封装方法、电子装置及封装薄膜回收方法
JP7095978B2 (ja) 2017-11-16 2022-07-05 日東電工株式会社 半導体プロセスシートおよび半導体パッケージ製造方法
JP2020131552A (ja) * 2019-02-20 2020-08-31 株式会社東芝 キャリアおよび半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4540150B2 (ja) * 1998-09-30 2010-09-08 日東電工株式会社 熱剥離型粘着シート
JP2004072040A (ja) * 2002-08-09 2004-03-04 Lintec Corp 属性表示付ダイシングテープおよびその製造方法
US20060243710A1 (en) * 2003-05-22 2006-11-02 Tokyo Seimitsu Co., Ltd. Dicing device
KR101204197B1 (ko) * 2003-06-06 2012-11-26 히다치 가세고교 가부시끼가이샤 접착시트, 다이싱 테이프 일체형 접착시트 및 반도체장치의 제조방법
KR100674907B1 (ko) * 2003-11-26 2007-01-26 삼성전자주식회사 고신뢰성을 갖는 스택형 반도체 패키지
JP3795040B2 (ja) * 2003-12-03 2006-07-12 沖電気工業株式会社 半導体装置の製造方法
JP4677758B2 (ja) * 2004-10-14 2011-04-27 日立化成工業株式会社 ダイボンドダイシングシート及びその製造方法、並びに、半導体装置の製造方法
JP2007311421A (ja) * 2006-05-16 2007-11-29 Sekisui Chem Co Ltd 半導体チップの製造方法
CN101924056A (zh) * 2009-06-15 2010-12-22 日东电工株式会社 半导体背面用切割带集成膜
JP5645500B2 (ja) * 2010-06-23 2014-12-24 キヤノン株式会社 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法
JP5744434B2 (ja) * 2010-07-29 2015-07-08 日東電工株式会社 加熱剥離シート一体型半導体裏面用フィルム、半導体素子の回収方法、及び半導体装置の製造方法
JP5641641B2 (ja) * 2010-07-29 2014-12-17 日東電工株式会社 ダイシングテープ一体型半導体裏面用フィルム及び半導体装置の製造方法
JP2012149182A (ja) * 2011-01-19 2012-08-09 Nitto Denko Corp 両面粘着テープ又はシート、および被着体の加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
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