TW201725616A - 晶圓的加工方法 - Google Patents
晶圓的加工方法 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 75
- 229920005989 resin Polymers 0.000 claims abstract description 75
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 104
- 230000001681 protective effect Effects 0.000 claims description 29
- 238000005520 cutting process Methods 0.000 abstract description 18
- 238000005498 polishing Methods 0.000 abstract 2
- 238000007517 polishing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 11
- 238000003825 pressing Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
提供一種晶圓的加工方法,可抑制費用,且***的高度即使較高該***的凹凸也不會被轉移至磨削面,磨削後的晶圓的厚度參差不一也被縮小,在磨削中防止晶片彼此衝突,將晶圓保持在挾盤載置台時負壓的洩漏不會發生。一種晶圓的加工方法,該晶圓,是在藉由交叉形成的複數分割預定線而被區劃的表面的各領域形成有元件,該各元件具有朝表面突出的複數***,將該晶圓沿著該分割預定線分割而形成規定厚度的複數元件晶片之加工方法,其特徵為,具備:從晶圓的表面沿著該分割預定線形成比該規定厚度更深且不將晶圓完全切斷的深度的溝的溝形成步驟;及將形成有該溝的晶圓的該表面由具有該***的高度的1.5~5倍的厚度的液狀樹脂覆蓋的樹脂被覆步驟;及實施該樹脂被覆步驟之後,使該液狀樹脂硬化的樹脂硬化步驟;及實施該樹脂硬化步驟之後,藉由將晶圓的背面磨削朝該規定厚度將晶圓薄化並且使該溝朝該背面露出,將晶圓沿著該分割預定線分割並形成規定厚度的複數元件晶片的磨削步驟。
Description
本發明,是有關於晶圓的加工方法,該晶圓,是在藉由交叉形成的複數分割線被區劃的表面的各領域形成有元件,該各元件具有朝表面突出的複數***。
在半導體元件晶片的製造程序中,被稱為格線的複數分割預定線是呈格子狀形成在由矽和化合物半導體所構成的晶圓表面,在藉由分割預定線被區劃的各領域形成有LSI等的元件。這些的晶圓是背面是被磨削且被薄化成規定的厚度之後,藉由沿著格線藉由切削裝置等被分割而使各半導體元件晶片被製造。
近年來,實現半導體元件模組的輕薄短小化用的技術,在元件表面將被稱為***的金屬突起物複數形成,將這些的***與形成於配線基板的電極相對地直接接合的被稱為倒裝晶片接合的貼裝技術已被實用化(例如日本特開2001-237278號公報參照)。
且將晶圓分割成更薄的元件晶片的技術,如先方塊切割法(Dicing Before Grinding)的分割技術已被開
發且被實用化(例如日本特開平11-40520號公報參照)。
此先方塊切割法,是從半導體晶圓或是光元件晶圓的表面沿著分割預定線形成規定深度(相當於元件晶片的精整厚度的深度以上的深度)的分割溝,其後,在表面將形成有分割溝的晶圓的背面磨削使分割溝露出該背面地將晶圓分割成各元件晶片的技術,可將元件晶片的厚度加工至50μm以下。
近年來,在***形成於表面的晶圓中也有被貼裝被稱為高***的高度較高的***者。將這種晶圓背面磨削時,將具有相當厚度的保護膠帶貼合在晶圓表面地將背面磨削。但是,***的高度因為較高,即使欲由保護膠帶將***的凹凸吸收使平坦化,但完全地平坦化仍是困難的。
其結果,將保護膠帶貼合在具有***的晶圓的表面將晶圓的背面磨削的話,***的凹凸會被轉移至磨削面,而具有磨削後的晶圓的厚度參差不一變大的問題。且,透過保護膠帶由挾盤載置台吸引晶圓保持時,也具有保護膠帶無法完全追從而使負壓洩漏使晶圓的吸引保持成為不完全的問題。
[專利文獻1]日本特開2001-237278號公報
[專利文獻2]日本特開平11-40520號公報
[專利文獻3]日本特開2012-160515號公報
[專利文獻4]日本特開2012-119594號公報
但是吸收***的凹凸的具有厚度的保護膠帶是除了費用較高的問題此外,保護膠帶的黏接層因為比較軟,所以在磨削中晶片會在保護膠帶上動作,晶片彼此會衝突使晶片的外周發生缺口或發生晶圓破裂的問題。
本發明是有鑑於此點者,其目的是提供一種晶圓的加工方法,可抑制費用,且***的高度即使較高該***的凹凸也不會被轉移至磨削面,磨削後的晶圓的厚度參差不一也被縮小,在磨削中防止晶片彼此衝突,在挾盤載置台將晶圓保持時負壓的洩漏不會發生。
依據本發明的話,可提供一種晶圓的加工方法,該晶圓,是在藉由交叉形成的複數分割預定線而被區劃的表面的各領域形成有元件,該各元件具有朝表面突出的複數***,將該晶圓沿著該分割預定線分割而形成規定厚度的複數元件晶片的加工方法,其特徵為,具備:從晶圓的表面沿著該分割預定線形成比該規定厚度更深且不將晶圓完全切斷的深度的溝的溝形成步驟;及將形成有該溝
的晶圓的該表面由具有該***的高度的1.5~5倍的厚度的液狀樹脂覆蓋的樹脂被覆步驟;及實施該樹脂被覆步驟之後,使該液狀樹脂硬化的樹脂硬化步驟;及實施該樹脂硬化步驟之後,藉由將晶圓的背面磨削朝該規定厚度將晶圓薄化並且使該溝朝該背面露出,將晶圓沿著該分割預定線分割並形成規定厚度的複數元件晶片的磨削步驟。
較佳是,晶圓的加工方法,是進一步具備:與樹脂被覆步驟同時或是將樹脂被覆步驟實施之後,在被被覆的樹脂上配設保護薄片的保護薄片配設步驟。
在本發明的加工方法中,因為將樹脂被覆步驟實施之後,將藉由紫外線的照射或是加熱等的外面的刺激使液狀樹脂硬化而使具有***的高度的1.5~5倍的厚度的樹脂貼合在晶圓的表面地進行晶圓的背面磨削,所以在磨削中可防止晶片動作,藉由硬化的樹脂使***的凹凸被消解,就可以防止***朝磨削面的轉移和晶圓的厚度參差不一,進一步可以防止吸引保持時的負壓的洩漏。
11‧‧‧半導體晶圓
11a‧‧‧表面
11b‧‧‧背面
12‧‧‧切削單元
13‧‧‧分割預定線
14‧‧‧主軸
15‧‧‧元件
16‧‧‧切削刀片
17‧‧‧***
18‧‧‧支撐載置台
19‧‧‧元件領域
20‧‧‧保護薄片
22‧‧‧供給噴嘴
23‧‧‧溝
24‧‧‧樹脂供給源
25‧‧‧元件晶片
26‧‧‧液狀樹脂
28‧‧‧保持載置台
30‧‧‧框體
30a‧‧‧圓形凹部
32‧‧‧吸引保持部
34‧‧‧吸引路
36‧‧‧吸引源
37‧‧‧推壓機構
38‧‧‧支撐構件
40‧‧‧紫外線燈泡
42‧‧‧挾盤載置台
44‧‧‧磨削單元
48‧‧‧滾輪支架
50‧‧‧磨削滾輪
52‧‧‧滾輪基台
54‧‧‧磨削砥石
[第1圖]各元件是具有複數***的半導體晶圓的立體圖。
[第2圖]第2圖(A)是顯示溝形成步驟的剖面圖,第2
圖(B)是溝形成步驟終了後的晶圓的剖面圖。
[第3圖]說明樹脂被覆步驟的剖面圖。
[第4圖]說明樹脂被覆步驟的剖面圖。
[第5圖]顯示樹脂硬化步驟的剖面圖。
[第6圖]第6圖(A)是顯示磨削步驟的一部分剖面側面圖,第6圖(B)是磨削步驟終了後的剖面圖。
[第7圖]顯示轉移步驟的剖面圖。
[第8圖]剝離步驟實施後的剖面圖。
[第9圖]顯示拾取步驟的剖面圖。
以下,參照圖面詳細說明本發明的實施例。參照第1圖的話,顯示形成於表面的各元件是具有複數***的半導體晶圓(以下,也有只略稱為晶圓)11的立體圖。
半導體晶圓11是由矽和化合物半導體所形成,具有表面11a及背面11b,在表面11a中複數分割預定線(格線)13是垂直交叉地形成,在藉由分割預定線13而被區劃的各領域中各別形成有LSI等的元件15。
如第1圖的放大圖所示,在各元件15的4邊形成有複數突起狀的***17。因為在各元件15的4邊形成有***17,所以半導體晶圓11是具有:形成有***17的元件領域(***形成領域)19、及將元件領域19圍繞的外周多餘領域(***未形成領域)21。
本發明的晶圓的加工方法,因為是依據先方
塊切割法(Dicing Before Grinding)的加工方法,首先實施在晶圓11的表面11a沿著分割預定線13形成規定深度(晶片的精整厚度以上的深度)的溝的溝形成步驟。
此溝形成步驟,是在本發明實施例中如第2圖(A)所示,藉由切削裝置的切削單元12實施。切削單元12,是包含:由高速被旋轉驅動的主軸14、及被固定於主軸14的先端的切削刀片16。
在溝形成步驟中,將高速旋轉的切削刀片16從晶圓11的表面11a沿著分割預定線13切入規定深度(晶片精整厚度以上的深度),藉由將晶圓11加工給進,形成規定深度的溝23。此規定深度有必要是不將晶圓11完全切斷的深度。
藉由將切削刀片16分割地給進,沿著朝第1方向伸長的分割預定線13形成規定深度的溝23。接著,將保持了晶圓11的挾盤載置台旋轉90°之後,沿著朝與第1方向垂直交叉的第2方向伸長的分割預定線23形成規定深度的溝23。第2圖(B)是顯示溝形成步驟終了後的晶圓11的剖面圖。
在本實施例中,將溝形成步驟藉由切削裝置實施,但是將對於晶圓11具有吸收性的波長(例如355nm)的雷射光沿著分割預定線13照射在晶圓11的表面11a,藉由雷射光的切斷加工形成規定深度的溝23也可以。
溝形成步驟終了後,實施將形成有溝23的晶
圓11的表面11a由具有***17的高度的1.5~5倍的厚度的樹脂覆蓋的樹脂被覆步驟。對於此樹脂被覆步驟,參照第3圖(A)~第4圖(B)進行說明。
首先,如第3圖(A)所示,在支撐載置台18上配設保護薄片20,從與樹脂供給源24連接的供給噴嘴22將液狀樹脂26供給至保護薄片20上。樹脂26可以採用藉由加上外面的刺激而硬化的樹脂,例如,藉由紫外線的照射而硬化的紫外線硬化樹脂,或是藉由加熱而硬化的熱硬化樹脂。在本實施例中,液狀樹脂26是採用了紫外線硬化樹脂。
將液狀樹脂26供給至被支撐於支撐載置台18上的保護薄片20上之後,如第3圖(B)所示,將晶圓11的背面11b側吸引保持在保持載置台28,實施將晶圓11的表面11a側朝液狀樹脂26推壓的推壓步驟。
在第3圖(B)中,保持載置台28是由:形成有圓形凹部30a的框體30、及由被嵌合於框體30的圓形凹部30a中的多孔性陶瓷等所形成的吸引保持部32所構成。
吸引保持部32,是透過吸引路34與吸引源36選擇地連接。保持載置台28是與推壓機構37的支撐構件38連結,藉由推壓機構37朝上下方向可移動地構成。
在推壓步驟中,將晶圓11吸引保持的保持載置台28藉由推壓機構37,如第3圖(B)及第4圖(A)所
示,朝箭頭A方向移動將晶圓11的表面11a朝被供給至保護薄片20上的液狀樹脂26推壓。
藉由此推壓,液狀樹脂26是在保護薄片20及晶圓11之間被壓擴,如第4圖(B)所示,晶圓11的表面11a是在埋設***17的狀態下被液狀樹脂26覆蓋。液狀樹脂26,是具有***17的高度的1.5~5倍的厚度較佳。
藉由由具有這種厚度的液狀樹脂將晶圓11的表面11a覆蓋,在保護薄片20上使***17的凹凸完全地被消解。且,上述的推壓步驟是構成樹脂被覆步驟的一部分。
且在上述的實施例中,在支撐載置台18上配設保護薄片20,在此保護薄片20上將液狀樹脂26滴下將晶圓11的表面11a由樹脂26被覆,但是保護薄片26不是必須,省略保護薄片20在支撐載置台18上直接供給液狀樹脂26,將晶圓11的表面11a由樹脂26被覆也可以。在此情況下,支撐載置台18的上面有必要是充分平坦,被硬化的樹脂26是具有可以從支撐載置台18的上面簡單地剝離的性質。
實施樹脂被覆步驟之後,實施將液狀樹脂26硬化的樹脂硬化步驟。在本實施例中樹脂26因為採用了紫外線硬化樹脂,所以如第5圖所示,從被配置於支撐載置台18的下方的紫外線燈泡40朝液狀樹脂26將紫外線照射,將樹脂26硬化。
且支撐載置台18及保護薄片20有必要具有可透過從紫外線燈泡40被照射的紫外線的性質。液狀樹脂26,是採用熱硬化性樹脂的情況時,藉由將液狀樹脂26加熱使硬化。
實施樹脂硬化步驟之後,實施:將晶圓11的背面11b磨削將晶圓11朝規定厚度薄化,並且藉由將溝23朝背面11b露出將晶圓11沿著分割預定線13分割而形成規定厚度的複數元件晶片25的磨削步驟。
在磨削步驟中,將第5圖所示的樹脂硬化步驟實施之後,將從支撐載置台18上剝遠的保護薄片20,如第6圖(A)所示,載置在磨削裝置的挾盤載置台42上由挾盤載置台42透過保護薄片20將晶圓11吸引保持,使晶圓11的背面11b露出。
在第6圖(A)中,磨削單元44,是包含:主軸45、及被固定於主軸45的先端的滾輪支架48、及藉由無圖示的螺栓可裝卸地被安裝於滾輪支架48的磨削滾輪50。磨削滾輪50,是由:環狀的滾輪基台52、及被固定(附著)在滾輪基台52的下端部外周的複數磨削砥石54所構成。
在磨削步驟中,將挾盤載置台42朝箭頭a方向例如300rpm地旋轉,且將磨削滾輪50朝箭頭b方向例如6000rpm地旋轉,並且將無圖示的磨削給進機構驅動將磨削砥石54朝晶圓11的背面11b推壓將晶圓11的背面11b磨削。
將晶圓11的背面11b磨削將晶圓11朝規定厚度薄化的話,如第6圖(B)所示,溝23是朝晶圓11的背面11b露出使晶圓11被分割成複數元件晶片25。磨削步驟實施後的晶圓11的剖面圖是如第6圖(B)所示。
在本實施例的磨削步驟中,形成於晶圓11的表面11a的複數***17因為是被埋設在樹脂26中藉由樹脂26使***17的凹凸完全地被吸收,所以可以將晶圓11的背面11b磨削將晶圓11一樣厚度地精加工。
將磨削步驟實施之後,如第7圖所示,實施:將晶圓11的背面11b貼合在外周部被裝設於環狀框架F的黏膠帶T的轉移步驟。接著,如第8圖所示,實施:將樹脂26及保護薄片20從晶圓11的表面11a剝離的剝離步驟。因為樹脂26是藉由紫外線的照射被硬化,所以可以簡單地將樹脂26及保護薄片20從晶圓11的表面11a剝離。
剝離步驟實施後,如第9圖所示,實施藉由無圖示的拾取裝置將元件晶片25從黏膠帶T拾取的拾取步驟,將被拾取的元件晶片25收容於托盤等。
11‧‧‧半導體晶圓
11b‧‧‧背面
16‧‧‧切削刀片
17‧‧‧***
20‧‧‧保護薄片
23‧‧‧溝
25‧‧‧元件晶片
26‧‧‧液狀樹脂
42‧‧‧挾盤載置台
44‧‧‧磨削單元
48‧‧‧滾輪支架
50‧‧‧磨削滾輪
52‧‧‧滾輪基台
54‧‧‧磨削砥石
Claims (2)
- 一種晶圓的加工方法,該晶圓,是在藉由交叉形成的複數分割預定線而被區劃的表面的各領域形成有元件,該各元件具有朝表面突出的複數***,將該晶圓沿著該分割預定線分割而形成規定厚度的複數元件晶片之加工方法,其特徵為,具備:從晶圓的表面沿著該分割預定線形成比該規定厚度更深且不將晶圓完全切斷的深度的溝的溝形成步驟;及將形成有該溝的晶圓的該表面由具有該***的高度的1.5~5倍的厚度的液狀樹脂覆蓋的樹脂被覆步驟;及實施該樹脂被覆步驟之後,使該液狀樹脂硬化的樹脂硬化步驟;及實施該樹脂硬化步驟之後,藉由將晶圓的背面磨削朝該規定厚度將晶圓薄化並且使該溝朝該背面露出,將晶圓沿著該分割預定線分割並形成規定厚度的複數元件晶片的磨削步驟。
- 如申請專利範圍第1項的晶圓的加工方法,其中,進一步具備:與該樹脂被覆步驟同時或是將該樹脂被覆步驟實施之後,在該樹脂上配設保護薄片的保護薄片配設步驟。
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