TW201700802A - 碳化矽基板及碳化矽基板之製造方法 - Google Patents
碳化矽基板及碳化矽基板之製造方法 Download PDFInfo
- Publication number
- TW201700802A TW201700802A TW105115077A TW105115077A TW201700802A TW 201700802 A TW201700802 A TW 201700802A TW 105115077 A TW105115077 A TW 105115077A TW 105115077 A TW105115077 A TW 105115077A TW 201700802 A TW201700802 A TW 201700802A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- tantalum carbide
- carbide substrate
- tantalum
- base film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 214
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract description 111
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 107
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 129
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 129
- 239000007789 gas Substances 0.000 claims description 44
- 238000010438 heat treatment Methods 0.000 claims description 30
- 238000007254 oxidation reaction Methods 0.000 claims description 30
- 230000003647 oxidation Effects 0.000 claims description 28
- 229910052715 tantalum Inorganic materials 0.000 claims description 21
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 21
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 239000011148 porous material Substances 0.000 claims description 15
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 229910052707 ruthenium Inorganic materials 0.000 claims description 11
- 239000011800 void material Substances 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000002950 deficient Effects 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 27
- 230000007547 defect Effects 0.000 description 23
- 238000000859 sublimation Methods 0.000 description 16
- 230000008022 sublimation Effects 0.000 description 16
- 238000003763 carbonization Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- CRSOQBOWXPBRES-UHFFFAOYSA-N neopentane Chemical compound CC(C)(C)C CRSOQBOWXPBRES-UHFFFAOYSA-N 0.000 description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 238000010000 carbonizing Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000001282 iso-butane Substances 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IXADHCVQNVXURI-UHFFFAOYSA-N 1,1-dichlorodecane Chemical compound CCCCCCCCCC(Cl)Cl IXADHCVQNVXURI-UHFFFAOYSA-N 0.000 description 1
- UYVWNPAMKCDKRB-UHFFFAOYSA-N 1,2,4,5-tetraoxane Chemical compound C1OOCOO1 UYVWNPAMKCDKRB-UHFFFAOYSA-N 0.000 description 1
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- YMEKHGLPEFBQCR-UHFFFAOYSA-N 2,2,3,3,5,5-hexachloro-1,4-dioxane Chemical compound ClC1(OC(C(OC1)(Cl)Cl)(Cl)Cl)Cl YMEKHGLPEFBQCR-UHFFFAOYSA-N 0.000 description 1
- QDKSGHXRHXVMPF-UHFFFAOYSA-N 2,2-dimethylundecane Chemical compound CCCCCCCCCC(C)(C)C QDKSGHXRHXVMPF-UHFFFAOYSA-N 0.000 description 1
- GTJOHISYCKPIMT-UHFFFAOYSA-N 2-methylundecane Chemical compound CCCCCCCCCC(C)C GTJOHISYCKPIMT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02403—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
本發明提供一種高品質之碳化矽基板、及能夠有效率地製造高品質之碳化矽基板之碳化矽基板之製造方法。
本發明之碳化矽基板1包含:Si基板2(矽基板);SiC基底膜3(碳化矽基底膜),其積層於Si基板2上,且包含碳化矽;缺損部31(貫通孔),其貫通SiC基底膜3;空孔32,其對應於缺損部31而位於Si基板2與SiC基底膜3之間;及氧化膜33,其設置於空孔32內之Si基板2之表面,且包含氧化矽。又,於SiC基底膜3上,亦可形成SiC成長層(碳化矽成長層)。
Description
本發明係關於一種碳化矽基板及碳化矽基板之製造方法。
碳化矽(SiC)係具有與Si相比2倍以上之帶隙(2.36~3.23eV)之寬能帶隙半導體,其作為高耐壓元件用材料而受到關注。
但是,SiC與Si不同,結晶化溫度為高溫,故難以與Si基板同樣地自液相藉由提拉法而製作單晶錠。因此,提出藉由昇華法形成SiC之單晶錠之方法,但於該昇華法中,很難以大口徑形成結晶缺陷較少之基板。另一方面,於SiC結晶中,立方晶SiC(3C-SiC)亦能夠以相對低溫而形成,故提出於基板上進行磊晶成長之方法。
作為使用有該磊晶成長之SiC基板之製造方法之一,研究於氣相中,於Si基板上使3C-SiC成長之異質磊晶技術。於使3C-SiC成長之異質磊晶技術中,有將Si基板曝露於1000℃以上之高溫之情形。但是,存在如下問題:於此種加熱之過程中Si原子自Si基板昇華,Si基板之平坦性降低、或3C-SiC之成長受到阻礙。
因此,研究藉由將Si基板之表面碳化以形成SiC膜(碳化膜)而抑制Si原子之昇華之方法。但是,於SiC膜中存在缺損部(針孔)之情形時,Si原子經由該缺損部而自Si基板昇華。其結果,於SiC膜上以異質磊晶技術使3C-SiC成長時,導致3C-SiC之結晶性之劣化。
針對此種課題,於非專利文獻1中,記載有藉由提高用於碳化處理時之處理氣體(乙炔)之壓力而可堵塞缺損部之意旨。
[非專利文獻1]Journal of Crystal Growth 115 (1991) 612-616.
然而,由本發明者之詳細研究之結果得知,於碳化處理中暫時被堵塞之缺損部於其後之製程中會再次開口。如此般若缺損部開口,則於SiC膜上使3C-SiC成長時,受到缺損部之影響而導致3C-SiC之結晶性降低。
本發明之目的之一在於提供一種高品質之碳化矽基板、及能夠有效率地製造高品質之碳化矽基板之碳化矽基板之製造方法。
為解決上述目的、課題及問題之至少一者,本案發明可採取以下形態。
本發明之碳化矽基板之特徵在於包含:矽基板;碳化矽基底膜,其積層於上述矽基板上;貫通孔,其貫通上述碳化矽基底膜;空孔,其對應於上述貫通孔而位於上述矽基板與上述碳化矽基底膜之間;及氧化膜,其覆蓋上述空孔之上述矽基板面。
藉此,自空孔之內表面之Si原子之昇華藉由氧化覆膜而抑制,故已昇華之Si原子對碳化矽之結晶成長之影響受到抑制,從而可獲得能夠成長高品質之碳化矽單晶之碳化矽基板。
本發明之碳化矽基板中,較佳為上述碳化矽基底膜之厚度為2nm以上100nm以下。
藉此,充分地抑制磊晶成長中之自矽基板之Si原子之昇華,並且碳化矽基底膜之表面之平坦性不易降低。其結果,可獲得能夠成長高品質之碳化矽單晶之碳化矽基板。
本發明之碳化矽基板中,較佳為上述氧化覆膜之厚度為3nm以上300nm以下。
藉此,即便經過如磊晶成長般之熱歷程亦可充分地抑制Si原子之昇華,並且可防止氧化覆膜過厚而干涉碳化矽基底膜。
本發明之碳化矽基板中,較佳為進而於上述碳化矽基底膜上具有碳化矽成長層。
藉此,可獲得具有高品質之碳化矽成長層之碳化矽基板。
本發明之碳化矽基板之製造方法之特徵在於:包含:第1步驟,其係於矽基板之一面側形成碳化矽基底膜,而形成第1碳化矽基板;及第2步驟,其係對上述第1碳化矽基板實施氧化處理,而形成第2碳化矽基板;且上述第2碳化矽基板係於上述第1碳化矽基板中之上述矽基板與上述碳化矽基底膜之間之空孔中形成有氧化膜之基板。
藉此,可有效率地製造能夠成長高品質之碳化矽單晶之碳化矽基板。
本發明之碳化矽基板之製造方法中,較佳為上述氧化處理係將上述第1碳化矽基板於氧系氣體氛圍中進行加熱之處理。
藉此,於空孔之內表面Si原子與氧氣反應,生成氧化矽,故可有效率地形成氧化覆膜。
本發明之碳化矽基板之製造方法中,較佳為進而包含第3步驟,
即,對上述第2碳化矽基板實施使用包含氫氟酸之溶液之蝕刻處理,而形成第3碳化矽基板。
藉此,碳化矽基底膜之潔淨之表面露出,可進一步提高成長於其上之碳化矽單晶之品質。
本發明之碳化矽基板之製造方法中,較佳為上述第1步驟包含於碳系氣體氛圍中加熱上述矽基板之步驟。
藉此,藉由使矽基板之一部分轉化為碳化矽而形成碳化矽基底膜,故可形成結晶性較高且表面之平坦性良好之碳化矽基底膜。
本發明之碳化矽基板之製造方法中,較佳為在自上述第1步驟向上述第2步驟之移行時,將上述第1碳化矽基板之溫度保持為常溫以上。
藉此,可謀求基底膜形成步驟及氧化步驟之簡化及短時間化。又,可連續地執行2個步驟,故可保護第1碳化矽基板免受污染或熱衝擊。
本發明之碳化矽基板之製造方法中,更佳為進而包含第4步驟,即,於上述第3碳化矽基板上使碳化矽磊晶成長。
藉此,可有效率地製造包含高品質之碳化矽單晶之碳化矽基板。
本發明之碳化矽基板之製造方法中,較佳為上述第2步驟中之加熱溫度為較上述第1步驟中之加熱溫度低之溫度。
藉此,位於矽基板與碳化矽基底膜之間之空孔於氧化處理中不易擴大。其結果,可將自空孔之內表面昇華之Si原子之量抑制為較少。
1‧‧‧碳化矽基板
1a‧‧‧碳化矽基板
2‧‧‧Si基板
3‧‧‧SiC基底膜
4‧‧‧SiC成長層
5‧‧‧氧化覆膜
10‧‧‧碳化矽基板
31‧‧‧缺損部
32‧‧‧空孔
33‧‧‧氧化膜
圖1係表示本發明之碳化矽基板之實施形態之縱剖視圖。
圖2係表示藉由本發明之碳化矽基板之製造方法之實施形態所製
造之碳化矽基板之一例之縱剖視圖,其係自與Si基板之(011)面垂直之方向觀察之圖。
圖3(a)~(c)係用以說明製造圖1所示之碳化矽基板之方法之圖。
圖4(a)、(b)係用以說明製造圖2所示之碳化矽基板之方法之圖。
以下,基於隨附圖式所示之較佳之實施形態而詳細地說明碳化矽基板及碳化矽基板之製造方法。再者,於以下之說明中,為方便說明,將圖1中之上方稱為「上」,將下方稱為「下」。
(第1實施形態)
本實施形態係對在矽基板與積層於矽基板上之碳化矽基底膜之間之空孔中形成有氧化膜之碳化矽基板進行說明。
圖1係本實施形態之碳化矽基板1之縱剖視圖。
碳化矽基板1包含Si基板2(矽基板)、及積層於Si基板2上之SiC基底膜3(碳化矽基底膜)。此種碳化矽基板1被用作將SiC基底膜3作為晶種層而用以使立方晶碳化矽磊晶成長之基底。
Si基板2例如藉由將以CZ法(Czochralski method,丘克拉斯基法)提拉之矽單晶錠切片、研磨而獲得。該Si基板2亦可為具有任意之面方位之基板,例如可使用其主面成為(100)面、或成為(100)面之結晶軸傾斜數度之偏移之面之基板。
再者,本實施形態中,對Si基板2為矽結晶基板之情形進行說明,但Si基板2並不限定於此,例如亦可為於石英、藍寶石、多結晶SiC等基板上成膜有結晶矽膜之複合基板。
又,於Si基板2為矽結晶基板之情形時,較佳為其整體為單晶,但亦可為多晶。
Si基板2之厚度係以Si基板2具有能夠支持SiC基底膜3之程度之機械強度之方式適當設定,作為一例,較佳為100μm以上2mm以下之
程度。
SiC基底膜3積層於Si基板2之上表面。該SiC基底膜3可為對矽單晶基板之表面實施碳化處理而形成之碳化膜,亦可為於矽單晶基板之表面成膜SiC而獲得者。
SiC基底膜3之結晶構造並未特別限定,例如設為立方晶SiC(3C-SiC)。再者,亦可為3C-SiC以外之結晶,例如4H-SiC、6H-SiC。
又,SiC基底膜3之厚度並未特別限定,但較佳為2nm以上100nm以下,更佳為3nm以上50nm以下,進而佳為4nm以上10nm以下。藉由將SiC基底膜3之厚度設定於上述範圍內,而於其後之製造步驟中,即便經過如磊晶成長般之熱歷程亦可充分地抑制自Si基板2之Si原子之昇華,並且可獲得上表面之平坦性不易降低之SiC基底膜3。
即,若SiC基底膜3之厚度低於上述下限值,則有SiC基底膜3對Si基板2之被覆不充分之虞,且有如下之虞,即,根據磊晶成長之條件的不同,於磊晶成長之製程初期導致Si原子顯著昇華,從而使成長之SiC成長層之品質下降。另一方面,若SiC基底膜3之厚度超出上述上限值,則有如下之虞,即,根據SiC基底膜3之成膜條件的不同,SiC基底膜3之上表面之平坦性降低,使成長於其上之SiC成長層之品質下降。
再者,SiC基底膜3之厚度例如係利用如下等方法而求出,即,藉由使用有橢圓偏光法等光學方法之測定法而測量,或利用電子顯微鏡或光學顯微鏡等觀察碳化矽基板1之剖面,且於觀察圖像上測量SiC基底膜3之厚度等。
又,SiC基底膜3較佳為其整體為單晶,但並非必須限定於此,亦可為多晶。
SiC基底膜3中,產生有例如因矽之晶格常數與碳化矽之晶格常數之差異等而產生之複數個缺損部31(貫通孔),且在與該缺損部31對
應之Si基板2之表面存在空孔32。於該空孔32之Si基板2之面形成有氧化膜33。
藉由形成氧化膜33,即便對碳化矽基板1進行加熱,亦不存在自空孔32之表面之Si原子之昇華。由於不存在Si原子之昇華,故並無經由缺損部31而昇華至SiC基底膜3之表面之Si原子出現,從而可排除使用有碳化矽基板1之後續之製造步驟中之Si原子昇華所導致的不良影響。
(第2實施形態)
本實施形態係對在第1實施形態中說明之碳化矽基板1之上,進而將SiC基底膜3作為晶種層而使立方晶碳化矽磊晶成長而成之碳化矽基板10進行說明。
圖2係本實施形態之碳化矽基板10之縱剖視圖,其係自與Si基板之(011)面垂直之方向觀察之圖。碳化矽基板10包含碳化矽基板1、及積層於其上之SiC成長層4。
本實施形態之SiC成長層4係由立方晶碳化矽(3C-SiC)所構成之半導體層。立方晶碳化矽之帶隙值較寬,為2.36eV以上,熱導率或絕緣破壞電場較高,故可較佳地用作例如功率元件用之寬能帶隙半導體。
再者,SiC成長層4並不限定於由3C-SiC所構成之半導體層,例如,亦可為由4H-SiC或6H-SiC所構成之半導體層。
第1實施形態之說明中記載之碳化矽基板1不會產生於其後之加熱之步驟中自Si基板2之Si原子之昇華所導致的不良影響。即,不會阻礙SiC成長層4之成長。藉此,碳化矽基板10可具備結晶缺陷較少之高品質之SiC成長層4。
此種碳化矽基板10可較佳地用作例如以寬能帶隙為優點之功率元件用之半導體基板。作為該功率元件,可列舉例如升壓轉換器用之
電晶體或二極體等。具體而言,可列舉MOSFET(metal-oxide-semiconductor field-effect transistor,金屬氧化物半導體場效應電晶體)、絕緣閘雙極性電晶體(IGBT,Insulated Gate Bipolar Transistor)、肖特基能障二極體(SBD)等。
碳化矽基板1之SiC基底膜3原本具有於SiC基底膜3之上形成SiC層之情形時使其品質提高之功能。其係緩和因矽之晶格常數與碳化矽之晶格常數之差異而產生之結晶缺損之功能。然而,因相同之理由而在形成於Si基板2之上之SiC基底膜3中亦存在缺損部31。自該缺損部31之Si原子之昇華使SiC成長層4之品質下降。然而,碳化矽基板1可抑制由該問題而導致之品質下降。
再者,氧化膜33包含氧化矽。作為氧化矽,可列舉例如SiO、SiO2等。
氧化膜33中之氧化矽之含有率並未特別限定,但較佳為50質量%以上,更佳為90質量%以上,進而佳為藉由熱處理而形成之大致100質量%之氧化矽。此種氧化膜33尤其能夠抑制Si原子之昇華。
氧化膜33之厚度並未特別限定,但較佳為3nm以上300nm以下,更佳為5nm以上150nm以下,進而佳為7nm以上30nm以下。藉由將氧化膜33之厚度設定於上述範圍內,例如即便經過如磊晶成長般之熱歷程亦可充分地抑制自Si基板2之Si原子之昇華,並且可防止氧化膜33過厚而干涉SiC基底膜3。
即,若氧化膜33之厚度低於上述下限值,則氧化膜33之厚度不充分,易產生氧化膜33中斷之部分,故有無法充分地抑制Si原子之昇華之虞。另一方面,若氧化膜33之厚度超出上述上限值,則氧化膜33之厚度過厚,故有氧化膜33自空孔32露出而干涉SiC基底膜3之虞。又,於藉由熱氧化法形成氧化膜33之情形時,若氧化膜33之厚度超出上述上限值,則有SiC基底膜3被氧化之虞。
再者,氧化膜33之厚度例如藉由以下方法求出,即,利用電子顯微鏡或光學顯微鏡等觀察碳化矽基板1之剖面,且於觀察圖像上測量氧化膜33之厚度。
(第3實施形態)
本實施形態係對製造第1實施形態中所示之碳化矽基板1之方法(本發明之碳化矽基板之製造方法之實施形態)進行說明。
圖3係用以說明製造碳化矽基板1之方法之圖。
本實施形態之碳化矽基板1之製造方法包含:[1]基底膜形成步驟(第1步驟),其係於Si基板2之上表面形成SiC基底膜3;及[2]氧化步驟(第2步驟),其係對SiC基底膜3實施氧化處理,於Si基板2與SiC基底膜3之間形成氧化膜33。以下,對各步驟依序進行說明。
[1]首先,準備圖3(a)所示之Si基板2。再者,於Si基板2上,視需要亦可實施利用蝕刻等之淨化處理。
其次,如圖3(b)所示,於Si基板2之上表面形成SiC基底膜3(基底膜形成步驟)。
SiC基底膜3之形成方法並未特別限定,例如亦可為藉由如CVD(Chemical Vapor Deposition化學氣相沈積)法、蒸鍍法般之氣相成膜法等而於Si基板2上成膜之方法,但較佳為使用使Si基板2之上表面碳化之碳化處理。根據此種碳化處理,使Si基板2之一部分轉化為碳化矽,故與其他方法相比較,可形成結晶性較高之SiC基底膜3。
碳化處理係藉由於碳系氣體氛圍中對Si基板2加熱而進行。碳系氣體氛圍係由包含碳系氣體之處理氣體而構成。作為碳系氣體,只要為包含碳之氣體則並無限定,例如除乙烯(C2H4)之外,可列舉乙炔(C2H2)、丙烷(C3H8)、甲烷(CH4)、乙烷(C2H6)、正丁烷(n-C4H10)、異丁烷(i-C4H10)、及新戊烷(neo-C5H12)等,可將該等中之1種或2種以上組合而使用。又,處理氣體中,視需要亦可混合載氣等任意氣體。
作為載氣,可列舉例如氫氣、氮氣、氦氣、氬氣等。於使用載氣之情形時,處理氣體中之碳系氣體之濃度可根據碳化處理之速度等而適當設定,但作為一例,較佳為0.1體積%以上30體積%以下,更佳為0.3體積%以上5體積%以下。
碳化處理中之Si基板2之加熱溫度較佳為500℃以上1400℃以下,更佳為800℃以上1300℃以下,進而佳為950℃以上1200℃以下。又,關於碳化處理中之Si基板2之加熱時間,曝露於上述加熱溫度之時間較佳為0.5分鐘以上,更佳為1分鐘以上60分鐘以下,進而佳為3分鐘以上30分鐘以下。
藉由將加熱條件設定於上述範圍內而可形成如上所述之厚度之SiC基底膜3。又,藉由使附加之熱能最佳化而使向碳化矽之轉化速度最佳化,故可形成缺損部31較少之SiC基底膜3。
又,碳化處理可於常壓氛圍、加壓氛圍及減壓氛圍之任一者下進行,但較佳為於對收納有Si基板2之處理室內一面排氣一面導入處理氣體之狀態下進行即可。作為一例,處理氣體中之碳系氣體之導入量設為10sccm以上100sccm以下。
如以上般,獲得包含Si基板2、及形成於其上之SiC基底膜3之碳化矽基板1a(第1碳化矽基板)。
獲得SiC基底膜3之表面亦具有良好之平坦性之碳化矽基板1a。然而,因矽之晶格常數與碳化矽之晶格常數之差異等而產生複數之缺損部31,且Si原子經由缺損部31而自Si基板2昇華,因此碳化矽基板1a在與複數之缺損部31分別對應之位置形成空孔32。
[2]其次,對碳化矽基板1a實施氧化處理。藉此,於空孔32中之Si基板2之表面形成氧化膜33(氧化步驟)。藉此,可獲得碳化矽基板1(第2碳化矽基板)。
氧化處理可藉由任意之方法進行,但本實施形態係以如下方法
進行,即,藉由使用有氧氣之乾式氧化法、或使用有水蒸氣之濕式氧化法,於氧系氣體氛圍中加熱碳化矽基板1a。藉此,經由缺損部31向空孔32中供給氧氣。其結果,於空孔32之內表面Si原子與氧反應,而有效率地生成氧化矽。該氧化矽係以覆蓋空孔32之內表面之方式產生,故藉此可獲得作為空孔32之內表面之蓋而發揮功能之氧化膜33(參照圖3(c))。
再者,氧化膜33之形成亦可不限定於空孔32之內表面,例如有在Si基板2與SiC基底膜3之界面之一部分亦形成氧化膜33之情形。進而,於SiC基底膜3之上表面亦形成較氧化膜33薄之氧化覆膜5。氧化膜33與氧化覆膜5之厚度之差異係由Si與SiC之氧化速度之差而產生。雖根據氧化處理溫度等條件而不同,但氧化覆膜5之厚度成為氧化膜33之1/3至1/5之厚度。
氧系氣體氛圍係由包含氧系氣體之處理氣體構成。作為氧系氣體,只要係包含氧氣之氣體則並未特別限定,可列舉例如氧氣、臭氧等,可將該等中之1種或2種以上組合而使用。
氧化處理中之碳化矽基板1a之加熱溫度較佳為低於碳化處理中之Si基板2之加熱溫度。藉此,可抑制空孔32進一步擴大。本氧化處理係於空孔32之表面形成氧化膜33之處理,但有於形成完成之前之期間亦並行產生空孔32擴大之虞。因此,藉由使氧化處理中之加熱溫度低於碳化處理中之加熱溫度而可將自空孔32之內表面昇華之Si原子之量抑制為較少。其結果,可抑制空孔32之擴大。
氧化處理中之加熱溫度較佳為較碳化處理中之加熱溫度低10℃以上300℃以下之幅度,更佳為低20℃以上250℃以下之幅度。
另一方面,氧化處理中之加熱溫度只要為Si能夠氧化之溫度以上即可,但更佳為1200℃以下,進而佳為1100℃以下。又,關於氧化處理中之碳化矽基板1a之加熱時間,曝露於上述加熱溫度下之時間較佳
為0.5分鐘以上,更佳為1分鐘以上300分鐘以下,進而佳為5分鐘以上120分鐘以下。
藉由將加熱條件設定為上述範圍內,可將空孔32之擴大抑制為最小限度,並且可形成如上所述之厚度之氧化膜33。又,藉由使附加之熱能最佳化而使向氧化矽之轉化速度最佳化,故可將氧化膜33中產生之缺損部抑制為最小限度。即,可抑制於氧化膜33中產生缺損部並且經由該缺損部而產生Si之昇華。
又,氧化處理亦可於常壓氛圍、加壓氛圍及減壓氛圍之任一者下進行,但較佳為於對收納有碳化矽基板1a之處理室內一面排氣一面導入處理氣體之狀態下進行即可。
再者,有缺損部31於SiC基底膜3之形成中途被堵塞之情形。然而,如此被堵塞之缺損部31亦可藉由於如上所述之加熱條件下被加熱而再次開口。藉此,可經由已開口之缺損部31而供給氧氣,且於Si基板2與SiC基底膜3之界面形成氧化膜33。
有氧化反應亦產生於SiC基底膜3之表面(上表面或缺損部31之內表面等)之情形。該情形時,如圖3(c)所示,於SiC基底膜3之表面亦形成氧化覆膜5。SiC之氧化速度較Si之氧化速度慢,故氧化覆膜5之厚度較氧化膜33之厚度薄。
於形成此種氧化覆膜5之情形時,視需要實施除去氧化覆膜5之處理即可。
除去氧化覆膜5之處理並未特別限定,可為物理除去之方法,但較佳為將氧化覆膜5如使用能夠蝕刻之處理液進行蝕刻處理般之化學除去之方法(第3步驟)。例如,亦可使包含氫氟酸之水溶液(以下,亦稱為「處理液」)發揮作用。藉此,氧化覆膜5被溶解、除去。其結果,SiC基底膜3之潔淨之上表面露出。再者,氧化覆膜5亦形成於缺損部31之上,故蝕刻處理僅進行能充分除去氧化覆膜5之時間即可,
藉此不存在氧化膜33被全部除去之情形。
再者,處理液中之氫氟酸之濃度較佳為例如0.1質量%以上50質量%以下之程度。又,於蝕刻處理之後,視需要亦可進行使用純水等之清洗。
以如上方式,獲得包含Si基板2、SiC基底膜3、及氧化膜33之碳化矽基板1(第3碳化矽基板)。
如此般形成之碳化矽基板1藉由覆蓋空孔32之內表面之氧化膜33而可抑制於其後Si原子自空孔32昇華。因此,即便為於SiC基底膜3包含缺損部31之情形,亦可將Si原子昇華對使用有碳化矽基板1之後續之處理所造成的不良影響抑制為最小限度。因此,例如於碳化矽基板1之上進而使SiC層成長之情形時,可獲得高品質之SiC層。
再者,較佳為於基底膜形成步驟結束之後,執行將碳化矽基板1a之溫度保持為常溫以上(較佳為不降至常溫)之氧化步驟。藉此,可連續地執行2個步驟,故可謀求本製造製程之簡化及短時間化。
又,於處理室內實施碳化處理(進行基底膜形成步驟)之後,僅改變處理室內之氛圍便可連續地進行本步驟,故碳化矽基板1a不易與外部大氣接觸,從而可保護碳化矽基板1a免受污染或熱衝擊。
再者,所謂常溫係指處理室所處之環境之溫度,一般設為5℃以上35℃以下。
又,於基底膜形成步驟中導入處理氣體之情形時,只要在移行至氧化步驟時變更處理氣體之種類即可。藉此,可非常簡單地切換2個步驟。
再者,較佳為以使構成空孔32之內表面之結晶面成為Si之(111)面之方式構成Si基板2。藉此,空孔32之內表面成為在供於氧化處理時氧化反應快速進行之面。因此,可藉由短時間之氧化處理而形成充分之厚度之氧化膜33,故可將形成於SiC基底膜3之上表面之氧化覆膜
5之厚度限定為最小限度。其結果,可謀求蝕刻處理所需之時間之縮短化。
(第4實施形態)
本實施形態係對第2實施形態中所說明之碳化矽基板10之製造方法進行說明。圖4係用以說明製造碳化矽基板10之方法之圖。
碳化矽基板10係藉由實施結晶成長步驟(第4步驟)而製造,該結晶成長步驟係於第3實施形態中所說明之碳化矽基板1之製造步驟之後,進而於SiC基底膜3上使SiC成長層4磊晶成長。SiC基底膜3係作為用以使SiC成長層4磊晶成長之晶種層而發揮功能。
首先,準備將氧化覆膜5除去後之碳化矽基板1。將該碳化矽基板1示於圖4(a)。
圖4(a)所示之碳化矽基板1係於其上表面(SiC基底膜3之上表面)露出碳化矽,另一方面,於空孔32之內表面形成有氧化膜33,故可抑制於進行後續之加熱之步驟中Si原子之昇華。因此,缺損部31之影響隨著SiC成長層4之成長而逐漸消失,藉此可有效率地使高品質之SiC成長層4成長。
SiC成長層4例如以如下方式形成,即,將碳化矽基板1收納於處理室內,一面導入原料氣體一面加熱碳化矽基板1,藉此將立方晶碳化矽堆積於SiC基底膜3上。將形成有SiC成長層4之狀態示於圖4(b)。
作為原料氣體,可列舉:將含有碳之氣體與含有矽之氣體以特定之比例混合而成之混合氣體、以特定之比例含有碳與矽之包含碳及矽之氣體、將含有碳之氣體及含有矽之氣體以及含有碳及矽之氣體以特定之比例混合而成之複數種混合氣體。
其中,作為含有碳之氣體,例如除乙烯(C2H4)之外,可列舉乙炔(C2H2)、丙烷(C3H8)、甲烷(CH4)、乙烷(C2H6)、正丁烷(n-C4H10)、異丁烷(i-C4H10)、及新戊烷(neo-C5H12)等,可將該等中之1種或2種以上
組合而使用。
又,作為含有矽之氣體,可列舉例如甲矽烷(SiH4)、二矽烷(Si2H6)、三矽烷(Si3H8)、四矽烷(Si4H10)、二氯矽烷(SiH2Cl2)、四氯矽甲烷(SiCl4)、三氯矽烷(SiHCl3)、六氯二矽烷(Si2Cl6)等,可將該等中之1種或2種以上組合而使用。
進而,作為含有碳及矽之氣體,可列舉甲基矽烷(SiH3CH3)、二甲基矽烷(SiH2(CH3)2)、三甲基矽烷(SiH(CH3)3)等,可將該等中之1種或2種以上組合而使用。
再者,原料氣體之組成係根據立方晶碳化矽之組成而適當設定。藉此,可使由化學計量組成之立方晶碳化矽所構成之SiC成長層4成長。
又,磊晶成長中之加熱溫度即磊晶成長時之Si基板2之溫度較佳為600℃以上1400℃以下,更佳為800℃以上1350℃以下,進而佳為950℃以上1100℃以下。再者,磊晶成長中之加熱時間係根據SiC成長層4之目標厚度而適當設定。
又,磊晶成長中之處理室內之壓力並未特別限定,但較佳為1×10-4Pa以上且大氣壓(100kPa)以下,更佳為1×10-3Pa以上10kPa以下。
如以上般藉由於SiC基底膜3上使SiC成長層4磊晶成長而可有效率地獲得包含高品質之SiC成長層4之碳化矽基板10(參照圖2)。
具備此種高品質之SiC成長層4之碳化矽基板10可較佳地用作例如能夠以較高之製造效率製造高性能之功率元件之半導體基板。
以上,根據圖示之實施形態對本發明之碳化矽基板及碳化矽基板之製造方法進行了說明,但本發明並不限定於此。例如,本發明之碳化矽基板及碳化矽基板之製造方法亦可於上述實施形態中分別追加任意之步驟。本發明於不脫離本發明之主旨之範圍內能夠較廣泛地應
用。
1‧‧‧碳化矽基板
2‧‧‧Si基板
3‧‧‧SiC基底膜
31‧‧‧缺損部
32‧‧‧空孔
33‧‧‧氧化膜
Claims (11)
- 一種碳化矽基板,其特徵在於包含:矽基板;碳化矽基底膜,其積層於上述矽基板上;貫通孔,其貫通上述碳化矽基底膜;空孔,其與上述貫通孔對應而位於上述矽基板與上述碳化矽基底膜之間;及氧化膜,其覆蓋上述空孔之上述矽基板面。
- 如請求項1之碳化矽基板,其中上述碳化矽基底膜之厚度為2nm以上100nm以下。
- 如請求項1或2之碳化矽基板,其中上述氧化膜之厚度為3nm以上300nm以下。
- 如請求項1至3中任一項之碳化矽基板,其中進而於上述碳化矽基底膜上包含碳化矽成長層。
- 一種碳化矽基板之製造方法,其特徵在於包含:第1步驟,其係於矽基板之一面側形成碳化矽基底膜,而形成第1碳化矽基板;及第2步驟,其係對上述第1碳化矽基板實施氧化處理,而形成第2碳化矽基板;且上述第2碳化矽基板係於上述第1碳化矽基板中之上述矽基板與上述碳化矽基底膜之間之空孔中形成有氧化膜之基板。
- 如請求項5之碳化矽基板之製造方法,其中上述氧化處理係將上述第1碳化矽基板於氧系氣體氛圍中進行加熱之處理。
- 如請求項5或6之碳化矽基板之製造方法,其進而包含第3步驟,即,對上述第2碳化矽基板實施使用包含氫氟酸之溶液之蝕刻處 理,而形成第3碳化矽基板。
- 如請求項5至7中任一項之碳化矽基板之製造方法,其中上述第1步驟包含於碳系氣體氛圍中加熱上述矽基板之步驟。
- 如請求項5至8中任一項之碳化矽基板之製造方法,其中在自上述第1步驟向上述第2步驟之移行時,將上述第1碳化矽基板之溫度保持為常溫以上。
- 如請求項7至9中任一項之碳化矽基板之製造方法,其進而包含第4步驟,即,於上述第3碳化矽基板上使碳化矽磊晶成長。
- 如請求項5至10中任一項之碳化矽基板之製造方法,其中上述第2步驟中之加熱溫度為較上述第1步驟中之加熱溫度低之溫度。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015102026A JP6592961B2 (ja) | 2015-05-19 | 2015-05-19 | 炭化ケイ素基板および炭化ケイ素基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201700802A true TW201700802A (zh) | 2017-01-01 |
Family
ID=57325651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105115077A TW201700802A (zh) | 2015-05-19 | 2016-05-16 | 碳化矽基板及碳化矽基板之製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9882010B2 (zh) |
JP (1) | JP6592961B2 (zh) |
KR (1) | KR20160136245A (zh) |
CN (1) | CN106169497B (zh) |
TW (1) | TW201700802A (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6592961B2 (ja) * | 2015-05-19 | 2019-10-23 | セイコーエプソン株式会社 | 炭化ケイ素基板および炭化ケイ素基板の製造方法 |
KR102463483B1 (ko) * | 2017-08-29 | 2022-11-04 | 마이크론 테크놀로지, 인크 | 고 밴드 갭 재료를 포함하는 스트링 드라이버들을 갖는 디바이스들 및 시스템들, 및 형성 방법들 |
CN113113290B (zh) * | 2021-04-02 | 2021-12-24 | 眉山博雅新材料股份有限公司 | 一种碳化硅晶体制备方法 |
FR3141281A1 (fr) * | 2022-10-25 | 2024-04-26 | Commissariat A L' Energie Atomique Et Aux Energies Alternatives | Procédé de fabrication d’un empilement semiconducteur hautement résistif et empilement associé |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766193A (ja) * | 1993-08-24 | 1995-03-10 | Fujitsu Ltd | 半導体装置における酸化膜の形成方法 |
KR100312568B1 (ko) * | 1996-04-18 | 2003-06-19 | 마쯔시다덴기산교 가부시키가이샤 | Sic 소자 및 그 제조방법 |
US6273950B1 (en) * | 1996-04-18 | 2001-08-14 | Matsushita Electric Industrial Co., Ltd. | SiC device and method for manufacturing the same |
JP3557457B2 (ja) * | 2001-02-01 | 2004-08-25 | 東北大学長 | SiC膜の製造方法、及びSiC多層膜構造の製造方法 |
US6682627B2 (en) * | 2001-09-24 | 2004-01-27 | Applied Materials, Inc. | Process chamber having a corrosion-resistant wall and method |
EP1634323A4 (en) * | 2003-06-13 | 2008-06-04 | Univ North Carolina State | COMPLEX OXIDES FOR USE IN SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS |
US20050196974A1 (en) * | 2004-03-02 | 2005-09-08 | Weigel Scott J. | Compositions for preparing low dielectric materials containing solvents |
US7294324B2 (en) * | 2004-09-21 | 2007-11-13 | Cree, Inc. | Low basal plane dislocation bulk grown SiC wafers |
US7314520B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
JP5693946B2 (ja) * | 2010-03-29 | 2015-04-01 | エア・ウォーター株式会社 | 単結晶3C−SiC基板の製造方法 |
JP5573725B2 (ja) * | 2011-02-21 | 2014-08-20 | セイコーエプソン株式会社 | 立方晶炭化珪素半導体基板の製造方法 |
JP6051524B2 (ja) * | 2012-01-18 | 2016-12-27 | セイコーエプソン株式会社 | 半導体基板及び半導体基板の製造方法 |
JP6248532B2 (ja) | 2013-10-17 | 2017-12-20 | セイコーエプソン株式会社 | 3C−SiCエピタキシャル層の製造方法、3C−SiCエピタキシャル基板および半導体装置 |
US9362368B2 (en) * | 2014-10-31 | 2016-06-07 | Seiko Epson Corporation | Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor device |
US9536954B2 (en) * | 2014-10-31 | 2017-01-03 | Seiko Epson Corporation | Substrate with silicon carbide film, semiconductor device, and method for producing substrate with silicon carbide film |
JP6592961B2 (ja) * | 2015-05-19 | 2019-10-23 | セイコーエプソン株式会社 | 炭化ケイ素基板および炭化ケイ素基板の製造方法 |
-
2015
- 2015-05-19 JP JP2015102026A patent/JP6592961B2/ja active Active
-
2016
- 2016-05-12 CN CN201610319055.8A patent/CN106169497B/zh active Active
- 2016-05-12 US US15/153,319 patent/US9882010B2/en active Active
- 2016-05-16 TW TW105115077A patent/TW201700802A/zh unknown
- 2016-05-18 KR KR1020160060816A patent/KR20160136245A/ko unknown
Also Published As
Publication number | Publication date |
---|---|
CN106169497B (zh) | 2021-03-12 |
KR20160136245A (ko) | 2016-11-29 |
JP6592961B2 (ja) | 2019-10-23 |
JP2016216297A (ja) | 2016-12-22 |
CN106169497A (zh) | 2016-11-30 |
US9882010B2 (en) | 2018-01-30 |
US20160343570A1 (en) | 2016-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106435733B (zh) | 碳化硅单晶和碳化硅单晶晶片 | |
US9957638B2 (en) | Method for manufacturing silicon carbide semiconductor device | |
JP4694144B2 (ja) | SiC単結晶の成長方法およびそれにより成長したSiC単結晶 | |
KR101302845B1 (ko) | 탄화규소 기판의 표면 재구성 방법 | |
JP6123408B2 (ja) | 単結晶4H−SiC基板及びその製造方法 | |
JP2008053343A (ja) | 炭化珪素半導体エピタキシャル基板の製造方法 | |
TW201700802A (zh) | 碳化矽基板及碳化矽基板之製造方法 | |
JP2006032655A (ja) | 炭化珪素基板の製造方法 | |
JP6248532B2 (ja) | 3C−SiCエピタキシャル層の製造方法、3C−SiCエピタキシャル基板および半導体装置 | |
JP2021180225A (ja) | 半導体基板の製造方法、soiウェーハの製造方法及びsoiウェーハ | |
JP2014033068A (ja) | 炭化珪素半導体装置の製造方法および炭化珪素基板 | |
JP2012171830A (ja) | 立方晶炭化珪素半導体基板の製造方法 | |
WO2015097852A1 (ja) | 単結晶SiCエピタキシャル膜の形成方法 | |
JP3922674B2 (ja) | シリコンウエハの製造方法 | |
JP2019014628A (ja) | 炭化ケイ素膜付き基板の製造方法、炭化ケイ素膜付き基板および炭化ケイ素単結晶基板 | |
JP3087030B2 (ja) | SiC複合体およびその製造方法ならびに単結晶SiC | |
JP2018070435A (ja) | 半導体基板の製造方法 | |
JP6958042B2 (ja) | 単結晶基板、単結晶基板の製造方法および炭化ケイ素基板 | |
JP7023543B2 (ja) | ウエハの製造方法、エピタキシャルウエハの製造方法、これによって製造されたウエハ及びエピタキシャルウエハ | |
JP2010225733A (ja) | 半導体基板の製造方法 | |
JP6958041B2 (ja) | 単結晶基板、単結晶基板の製造方法および炭化ケイ素基板 | |
JP2006045036A (ja) | 化合物半導体成長用基板及びその製造方法 | |
KR20240069717A (ko) | 헤테로 에피택셜 웨이퍼의 제조방법 | |
KR101383295B1 (ko) | 3C-SiC 박막을 이용한 그래핀 합성방법 | |
KR20210080719A (ko) | 탄화규소 에피 웨이퍼 및 그 제조방법 |