TW201637147A - 使用在電鍍的側壁之囊封劑開口中之接點的半導體封裝 - Google Patents

使用在電鍍的側壁之囊封劑開口中之接點的半導體封裝 Download PDF

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TW201637147A
TW201637147A TW105104254A TW105104254A TW201637147A TW 201637147 A TW201637147 A TW 201637147A TW 105104254 A TW105104254 A TW 105104254A TW 105104254 A TW105104254 A TW 105104254A TW 201637147 A TW201637147 A TW 201637147A
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Taiwan
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encapsulant
conductor
contact pad
layer
conductor layer
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TW105104254A
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English (en)
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金傑永
黃他坤
金吉翰
朴炯蘇
金寬駱
金本俊
新及補
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艾馬克科技公司
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Publication of TW201637147A publication Critical patent/TW201637147A/zh

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    • H01L2224/732—Location after the connecting process
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Abstract

本發明提供一種半導體封裝及其製造方法，其包括在電鍍的側壁之囊封劑開口中的接點，實質上如該些圖式中的至少其中一個圖式所示及/或配合該些圖式中的至少其中一個圖式的說明，在申請專利範圍之中會更有完整的提出。

Description

使用在電鍍的側壁之囊封劑開口中之接點的半導體封裝
本揭示內容的特定範例實施例和半導體晶片封裝有關。更明確的說，本揭示內容的特定範例實施例和使用在電鍍的側壁之囊封劑開口中之接點的半導體封裝有關。
相關申請案之交叉參考
本申請案參考2015年2月9日提申的韓國專利申請案第10-2015-0019459號並且主張該案的優先權與權利，本文以引用的方式將其內容完整併入。
由於半導體業界對微型化、高功能電子產品的需求的關係，用於提供高容量半導體封裝的各式各樣技術正在進行研究與開發。
一般來說，因為晶圓級封裝係在晶圓層級被封裝的關係，所以，封裝成本能夠根據在每一個晶圓中被生產的半導體晶粒的數量而大幅地降低。然而，當一應力緩衝層被移除時(舉例來說，充當應力緩衝層的基板)，該些晶圓級封裝相較於在正確的地方有應力緩衝層的封裝則會有不良的可靠度。
熟習本技術的人士經由比較此些系統和參考圖式在本申請案的其餘部分中被提出的本揭示內容便會明白習知與傳統方式的進一步限制及缺點。
本揭示內容的各項觀點提供一種半導體封裝及其製造方法，其在一電鍍側壁囊封劑開口之中包括一接點，其實質上如該些圖式中的至少其中一者之中的顯示及/或配合該些圖式中的至少其中一者的說明，在申請專利範圍中會更完整被提出。
從下面的說明以及圖式之中將更完整瞭解本揭示內容的各項優點、觀點、與新穎特點以及支援實施例的各種被解釋範例的細節。
10‧‧‧假性(暫時性)圖樣
100‧‧‧半導體封裝
110‧‧‧半導體晶粒
110a‧‧‧半導體晶粒的第一表面
110b‧‧‧半導體晶粒的第二表面
111‧‧‧接觸觸墊
112‧‧‧觸墊介電層
113‧‧‧黏著劑
120‧‧‧絕緣層
120a‧‧‧絕緣層的第一表面
130‧‧‧重新分佈結構
140‧‧‧囊封劑
140a‧‧‧囊封劑的第一表面
140x‧‧‧囊封劑
141‧‧‧模具孔洞
150‧‧‧導體層
160‧‧‧導體互連結構
200‧‧‧半導體封裝
250‧‧‧導體層
300‧‧‧半導體封裝
350‧‧‧導體層
370‧‧‧接觸觸墊
400‧‧‧半導體封裝
440‧‧‧囊封劑
441‧‧‧模具孔洞
450‧‧‧導體層
450x‧‧‧導體層
460‧‧‧導體互連結構
470‧‧‧導體互連結構
470x‧‧‧導體互連結構
480‧‧‧載板
480a‧‧‧載板的第一表面
480b‧‧‧載板的第二表面
481‧‧‧晶粒鑲嵌部
500‧‧‧半導體封裝
580‧‧‧載板
580a‧‧‧載板的第一表面
580b‧‧‧載板的第二表面
圖1A至1F所示的係根據本揭示內容一實施例之製造半導體封裝的方法的視圖。
圖2所示的係根據本揭示內容另一實施例的半導體封裝的剖視圖。
圖3A至3D所示的係根據本揭示內容另一實施例之製造半導體封裝的方法的視圖。
圖4A至4G所示的係根據本揭示內容又一實施例之製造半導體封裝的方法的視圖。
圖5所示的係根據本揭示內容又一實施例的半導體封裝的方法的剖視圖。
下面的討論藉由提供本揭示內容的範例而提出本揭示內容的各項觀點。此些範例並沒有限制性，且因此，本揭示內容之各項觀點的範疇不應受限於所提供範例的任何特殊特徵。在下面的討論中，「舉例來說」以及「示範性」等用語皆沒有限制性並且大體上和「透過範例來說，但是沒有限制意義」、「舉例來說，但是沒有限制意義」、以及類似用語同義。
如本文中的用法，「及/或」的意義為藉由「及/或」來連接的列表之中的項目的任何一或更多者。舉例來說，「x及/或y」的意義為三要素集合{(x)、(y)、(x,y)}之中的任何要素。換言之，「x及/或y」的意義為「x與y之中的一或兩者」。於另一範例中，「x、y、及/或z」的意義為七要素集合{(x)、(y)、(z)、(x,y)、(x,z)、(y,z)、(x,y,z)}之中的任何要素。換言之，「x、y、及/或z」的意義為「x、y、以及z之中的一或更多者」。
本文中所使用的術語僅係為達成說明特殊範例的目的而沒有限制本揭示內容的意圖。如本文中的用法，除非文中額外清楚提及，否則單數的形式亦希望包含複數形式。進一步要瞭解的係，當本說明書中使用到「包括」、「包含」、「具有」、以及類似用詞時係表明所述特徵圖樣、數字、步驟、操作、元件、及/或器件的存在，但是並不排除有一或多個其它特徵圖樣、數字、步驟、操作、元件、器件、及/或其群組的存在，甚至並不排除加入一或多個其它特徵圖樣、數字、步驟、操作、元件、器件、及/或其群組。
應該瞭解的係，雖然本文中可以使用「第一」、「第二」、…等用詞來說明各種元件；不過，此些元件並不應該受限於此些用詞。此些用詞僅係用來區分其中一個元件以及另一個元件。因此，舉例來說，下文 所討論的第一元件、第一器件、或是第一區段亦可被稱為第二元件、第二器件、或是第二區段，其並不會脫離本揭示內容的教示內容。同樣地，本文亦可能利用諸如「上方」、「下方」、「側邊」、以及類似用詞的各種空間術語以相對的方式來區分其中一個元件和另一個元件。然而，應該瞭解的係，器件可以不同的方式來配向，舉例來說，一半導體裝置或封裝可以向側邊翻轉，俾使得其「頂端」表面面向水平方向並且使得其「側邊」表面面向垂直方向，其並不會脫離本揭示內容的教示內容。
還應該瞭解的係，除非額外清楚提及，否則，被耦合、被連接、被附接、以及類似詞包含直接與間接(舉例來說，利用一中間元件)耦合、連接、附接、…等。舉例來說，倘若元件A被耦合至元件B的話，元件A可以經由一中間訊號分佈結構間接被耦合至元件B、元件A可以直接被耦合至元件B(舉例來說，直接被黏接至元件B、直接被焊接至元件B、藉由直接金屬至金屬接合而被附接至元件B、…等)、…等。
在圖式中，為達清楚起見，結構、層、區域、…等的維度(舉例來說，絕對維度及/或相對維度)可能會被放大。此些維度雖然大體上表示一種範例施行方式；但是，它們並沒有限制性。舉例來說，倘若圖中所示的結構A大於區域B的話，這雖然大體上表示一種範例施行方式；但是，除非額外清楚提及，否則，結構A通常並不需要大於區域B。
本揭示內容的特定觀點可以在包括在電鍍的側壁囊封劑開口之中的接點的半導體封裝之中。本揭示內容的範例觀點可以包括：一半導體晶粒，其包括一具有一接觸觸墊的第一表面以及一和該第一表面反向的第二表面；一位在該半導體晶粒的第一表面上的重新分佈結構，其被電 氣耦合至該接觸觸墊；一囊封劑，用以囊封該重新分佈結構；一位在該重新分佈結構的一部分的上方的該囊封劑之中的開口；一位在該囊封劑之中的該開口的該些側壁上的導體層；以及一導體互連結構，其位在該重新分佈結構的該部分的上方並且填充沒有被該導體層填充的該囊封劑之中的該開口的其餘體積。該導體層可以位於該導體互連結構以及該重新分佈結構的該部分之間。位於該導體互連結構以及該重新分佈結構的該部分之間的導體層可以具有一凸形形狀。該導體層可以和該囊封劑的一頂端表面共平面。該導體層可以延伸在該囊封劑的一頂端表面的上方並且可以沿著該囊封劑的該頂端表面橫向延伸。該導體互連結構可以橫向延伸超越該囊封劑之中的該開口並且延伸在沿著該囊封劑之該頂端表面橫向延伸的導體層上。該導體互連結構可以延伸在該囊封劑的一頂端表面的上方。一第二接觸觸墊可以位在該半導體晶粒的第一表面上，在該半導體晶粒的該第一表面上有一介電層，其中，該介電層部分覆蓋該接觸觸墊以及該第二接觸觸墊。
參考圖1A至1F，圖中所示的係根據本揭示內容一實施例之製造半導體封裝的方法。圖1A至1F中所示的半導體晶粒110可以位在一包括複數個半導體晶粒110的晶圓之中。該晶圓可以在一單體裁切製程中被切割成多個獨特的半導體晶粒110。在下面的說明中，為避免術語之間的不一致並且為達清楚繪圖的目的，包含該複數個半導體晶粒110的晶圓將被稱為單一半導體晶粒110。
圖1A所示的係用以形成一重新分佈結構130的剖視圖。如圖1A中所示，該重新分佈結構130被電氣連接至半導體晶粒110的接觸觸 墊111並且可以包括至少一介電層以及至少一導體層。該半導體晶粒110有一平面的第一表面110a以及一和該第一表面110a反向的平面的第二表面110b，並且在該第一表面110a上會形成複數個接觸觸墊111。此外，該半導體晶粒110還可以包括一被形成在該第一表面110a上的觸墊介電層112，用以將該複數個接觸觸墊111裸露至外面。該觸墊介電層112可以包括下面任何各式各樣的介電材料，但是，本揭示內容的觀點並不受限於此，舉例來說：無機介電材料，舉例來說，Si3N4、SiO2、SiON、…等；及/或有機介電材料，舉例來說，聚醯亞胺(PI)、環苯丁烯(BCB)、聚苯并噁唑纖維(PBO)、雙馬來醯亞胺-三氮雜苯(BT)、酚系樹脂、環氧樹脂、…等。該觸墊介電層112可以下面任何各式各樣的方式來形成，舉例來說：印刷、旋塗、噴塗、燒結、熱氧化、物理氣相沉積(Physical Vapor Deposition，PVD)、化學氣相沉積(Chemical Vapor Deposition，CVD)、離子氣相沉積、薄片層疊、…等。
此外，一絕緣層120可以進一步***設在該半導體晶粒110以及該重新分佈結構130之間。該絕緣層120可以藉由化學氣相沉積(CVD)或是旋塗被塗佈以覆蓋被形成在該半導體晶粒110的第一表面110a上的所有該複數個接觸觸墊111以及觸墊介電層112，接著，則會藉由光微影術及/或雷射來進行圖樣化以便將該複數個接觸觸墊111裸露至外面。於有提供該絕緣層120的情況中，該重新分佈結構130可被被形成在該絕緣層120上，以便被電氣連接至經由該絕緣層120露出的該複數個接觸觸墊111。
該重新分佈結構130或是其(多個)導體層可以被電氣連接至該些接觸觸墊111並且可以沿著絕緣層120的第一表面120a延伸一預設長度。該重新分佈結構130的該一或更多個導體層可以藉由下面方式來形成， 但是，本揭示內容的觀點並不受限於此：無電極電鍍製程，以便利用金、銀、鎳、鈦、及/或鎢來形成一晶種層；電極電鍍製程，以便利用銅在一晶種層上形成一電鍍層；以及光微影術製程，以便利用一光阻來圖樣化一電鍍層。舉例來說，該重新分佈結構130的該至少一導體層可以運用下面各式各樣製程中的任何一或更多項來形成或是沉積，舉例來說：電解質電鍍、無電極電鍍、化學氣相沉積(CVD)、濺鍍或物理氣相沉積(PVD)、離子氣相沉積、印刷、…等。此外，該重新分佈結構130的該至少一導體層亦可以包括下面任何各式各樣的材料，但是，本揭示內容的觀點並不受限於此，舉例來說：銅、鋁、鎳、鐵、銀、金、鈦、鉻、鎢、它們的組合、它們的合金、…等。
該重新分佈結構130之中的該至少一介電層可以包括下面任何各式各樣的材料，但是，本揭示內容的觀點並不受限於此，舉例來說：無機介電材料，舉例來說，Si3N4、SiO2、SiON、氧化物、氮化物、…等；及/或有機介電材料，舉例來說，聚醯亞胺(PI)、環苯丁烯(BCB)、聚苯并噁唑纖維(PBO)、雙馬來醯亞胺-三氮雜苯(BT)、酚系樹脂、環氧樹脂、…等。的該至少一介電層可以下面任何各式各樣的方式來形成，但是，本揭示內容的觀點並不受限於此，舉例來說：印刷、旋塗、噴塗、燒結、熱氧化、物理氣相沉積(PVD)、化學氣相沉積(CVD)、離子氣相沉積、薄片層疊、…等。
圖1B所示的係用以形成假性(舉例來說，暫時性)圖樣10的剖視圖。如圖1B中所示，該些假性圖樣10可以在絕緣層120以及重新分佈結構130被形成之後被形成在外露的接觸觸墊111(舉例來說，經由觸墊介電層112、絕緣層120、其它層、…等而露出)之上。該些假性圖樣10亦 可以被形成在沿著絕緣層120的第一表面120a延伸自該重新分佈結構130的區域之上。該些假性圖樣10可以被形成具有一預設的厚度。於一範例情境中，該厚度可以大於半導體封裝100的囊封劑140的厚度(舉例來說，在囊封劑薄化之前或之後，如果有實施囊封劑薄化的話)。如圖1B中所示，被形成在該些接觸觸墊111上的假性圖樣10可以具有和被形成在重新分佈結構130上的假性圖樣10不同的維度，但是未必如此。舉例來說，被形成在一接觸觸墊111上的假性圖樣10可以高於被形成在重新分佈結構130上的假性圖樣10。同樣地，舉例來說，被形成在一接觸觸墊111上的假性圖樣10可以具有和被形成在重新分佈結構130上的假性圖樣10不同的寬度(舉例來說，基底寬度、頂端寬度、平均寬度、…等)，反之亦然。
該些假性圖樣10可以包括一光阻，但是，本揭示內容的觀點並不受限於此。假性圖樣10可以任何各式各樣的方式來形成，本文中會提供其非限制性範例。舉例來說，假性圖樣10可以被預形成並且接著被放置在該些接觸觸墊111以及重新分佈結構130上，該假性圖樣10可以直接被形成在該些接觸觸墊111以及重新分佈結構130上、…等。
圖1C所示的係用以形成囊封劑140x的剖視圖。如圖1C中所示，該囊封劑140x可以被形成用以覆蓋下面全部：絕緣層120的第一表面120a、該些假性圖樣10、以及該重新分佈結構130。該囊封劑140x可以包括下面任何各式各樣的材料，但是，本揭示內容的範疇並不受限於此，舉例來說：環氧樹脂模製化合物(Epoxy Molding Compound，EMC)、樹脂、聚合物合成材料(例如，有填充劑的環氧樹脂、有填充劑的環氧丙烯酸酯、或是有正確填充劑的聚合物)、…等。舉例來說，囊封劑140x可以包括可熱 固化的材料。該囊封劑140x可以下面任何各式各樣的方式來形成，但是，本揭示內容的範疇並不受限於此，舉例來說：擠壓模製、轉印模製、液體囊封劑模製、真空層疊、膏狀模製、膜輔助式模製、…等。如圖1C中所示，該囊封劑140x可以覆蓋該些假性圖樣10中一或更多者的頂端表面，但是並非必要如此。
圖1D所示的係用以移除假性圖樣10的剖視圖。如圖1D中所示，被囊封劑140x覆蓋的假性圖樣10可以先藉由移除該囊封劑140x的至少一部分而露出(如果原本並未露出的話)，並且該些露出的假性圖樣10便接著可以被移除。該囊封劑140x可以運用研磨製程被移除至和第一表面140a相隔一預設深度的位置處。於此情況中，因為囊封劑140x被部分移除的關係(舉例來說，經由研磨被移除)，其可以具有半導體封裝100所希望的預設厚度。應該注意的係，該些假性圖樣10的頂端側亦可能連同該囊封劑140x一起被薄化(舉例來說，經由研磨被薄化)。在該研磨之後，該囊封劑140會有一平面的第一表面140a。於此時點，該平面的第一表面140a可以和該些假性圖樣10的頂端表面共平面。據此，對應於已經形成該些假性圖樣10之區域的重新分佈結構130以及接觸觸墊111可以經由該囊封劑140而露出。
當從該囊封劑140的頂端表面處露出時，該些假性圖樣10便可以被移除。此移除可以任何各式各樣的方式來實施，本文中會提供其非限制性範例。舉例來說，該些假性圖樣10可以化學方式來移除(舉例來說，藉由蝕刻、…等)、以機械方式來移除、…等。
此外，倘若在研磨(或者薄化)該囊封劑140x之後而露出的假 性圖樣10被移除的話，已經形成該些假性圖樣10的區域則會經由該囊封劑140的第一表面140a而露出。此外，倘若該些假性圖樣10被移除的話，在該囊封劑140之中便會提供模具孔洞141而藉以露出該重新分佈結構130以及該些接觸觸墊111。
據此，對應於已經形成該些假性圖樣10之區域的重新分佈結構130以及接觸觸墊111可以經由該囊封劑140而露出。
圖1E所示的係用以形成一導體層150的剖視圖。如圖1E中所示，該導體層150可以被電氣連接至經由該囊封劑140而露出的重新分佈結構130以及接觸觸墊111。該導體層150可以被形成用以覆蓋該囊封劑140的該些模具孔洞141的內壁並且該導體層150的一部分可以延伸至該囊封劑140的該第一表面140a。該導體層150的一部分亦可以覆蓋圍繞該模具孔洞141之周長的該囊封劑140的頂端表面。該導體層150可以被形成志一預設的厚度。
該導體層150可以包括任何下面各式各樣導體材料製成的一或更多層，但是，本揭示內容的觀點並不受限於此，舉例來說：銅、鋁、鎳、鐵、銀、金、鈦、鉻、鎢、它們的組合、它們的合金、…等。該導體層150可以運用下面各式各樣製程中的任何一或更多項來形成或是沉積，但是，本揭示內容的觀點並不受限於此，舉例來說：電解質電鍍、無電極電鍍、化學氣相沉積(CVD)、濺鍍或物理氣相沉積(PVD)、離子氣相沉積、印刷、…等。於一範例施行方式中，該導體層150可以藉由下面方式來形成，但是，本揭示內容的觀點並不受限於此：利用無電極電鍍製程以金、銀、鎳、鈦、及/或鎢來電鍍一晶種層；圖樣化一光阻以覆蓋該導體層150 之潛在區域以外的區域；以及利用銅在經由該光阻所露出的晶種層上形成一電鍍層。
圖1F所示的係用以形成導體互連結構160的剖視圖。舉例來說，該些導體互連結構160可以包括導體凸塊，但是，本揭示內容的範疇並不受限於此。如圖1F中所示，該些導體互連結構160可以被形成在該導體層150上並且被電氣連接至該導體層150。舉例來說，該些導體互連結構160可以包括焊接凸塊或焊球，並且可以包括錫(Sn)/鉛(Pb)、無鉛的錫、或是雷同的材料，但是，本揭示內容的觀點並不受限於此。該些導體互連結構160可以經由該導體層150以及該重新分佈結構130被電氣連接至半導體晶粒110的接觸觸墊111。此外，該些導體互連結構160還可以僅經由該導體層150，而沒有該重新分佈結構130，被電氣連接至半導體晶粒110的接觸觸墊111。該些導體互連結構160可以包括輸入觸墊及/或輸出觸墊，用以讓該半導體封裝100被鑲嵌在一電子裝置的外板上、以封裝上封裝配置的方式被鑲嵌在另一電子裝置上、…等。
在形成該些導體互連結構160之後，該半導體晶粒110、該觸墊介電層112、該絕緣層120、以及該囊封劑140便可以被切晶(或是單體裁切)，用以將該晶圓分離成多個離散的半導體封裝100。
該半導體封裝100可以被形成具有一預設厚度，舉例來說，由該囊封劑140被薄化的程度來決定。此外，該半導體封裝100還可以藉由形成為具有高黏著性的導體層150黏著至該些導體互連結構160以及黏著至該囊封劑140的內壁(舉例來說，模具孔洞141的壁部)而降低因該些導體互連結構160和該囊封劑140之間的溫度差異與熱膨脹係數差異所造成的被施 加至該些導體互連結構160的應力，從而改良該半導體封裝100的板級可靠度(Board Level Reliability，BLR)。
參考圖2，圖中所示的係根據本揭示內容另一實施例的半導體封裝。圖2中所示的半導體封裝200包括一半導體晶粒110、一絕緣層120、一重新分佈結構130、一囊封劑140、以及一導體層250。圖2中所示的半導體晶粒110、絕緣層120、重新分佈結構130、以及囊封劑140可以實質上雷同於圖1F中所示的半導體封裝100。所以，下面關於半導體封裝200的說明會聚焦在導體層250和圖1F中所示的半導體封裝100的導體層150之間的差異。
導體層250可以被形成用以完全覆蓋囊封劑140的模具孔洞141的內壁，但是並沒有被形成用以覆蓋經由該囊封劑140所露出的重新分佈結構130以及接觸觸墊111，舉例來說，僅被形成在囊封劑140的模具孔洞141的內壁上。此外，該導體層250還可以沿著該些模具孔洞141的內壁被形成並且被電氣連接至該重新分佈結構130以及該些接觸觸墊111。該導體層250可以***設在該囊封劑140以及該些導體互連結構160之間，從而增加該囊封劑140以及該些導體互連結構160之間的耦合作用力。此外，經由該囊封劑140所露出的重新分佈結構130以及接觸觸墊111可以直接被連接至該些導體互連結構160，而不必分開提供該導體層250。
該半導體封裝200可以藉由形成具有高黏著性的導體層250黏著至該些導體互連結構160以及黏著至該囊封劑140的內壁(舉例來說，模具孔洞141的壁部)而降低因該些導體互連結構160和該囊封劑140之間的溫度差異與熱膨脹係數差異所造成的被施加至該些導體互連結構160的 應力，從而改良該半導體封裝200的板級可靠度(BLR)。
參考圖3A至3D，圖中所示的係根據本揭示內容另一實施例之製造半導體封裝的方法。
圖3A所示的係用以形成接觸觸墊370的剖視圖。在形成該些接觸觸墊370之前，實質上和圖1A中所示相同的方式，一絕緣層120以及一重新分佈結構130可以被形成在一半導體晶粒110上。如圖3A中所示，該些接觸觸墊370會在形成該重新分佈結構130與該絕緣層120之後被形成在複數個外露的接觸觸墊111上。於一範例情境中，該些接觸觸墊可以包括凸形形狀，最厚的區域基本上在中間。
該些接觸觸墊370可以被形成在一沿著絕緣層120的第一表面120a延伸自該重新分佈結構130的區域上。此外，該些接觸觸墊370亦可以被形成用以覆蓋沿著絕緣層120的第一表面120a延伸自該重新分佈結構130的區域的一末端。進一步言之，該些接觸觸墊370可以被形成用以覆蓋經由該絕緣層120露出的複數個接觸觸墊111。該些接觸觸墊370可以藉由下面其中一種方式來形成，但是，本揭示內容的觀點並不受限於此：通用的丸滴法(ball drop method)、噴墨法、網印、或是雷同的製程。該些接觸觸墊370以及該些導體互連結構160可以包括相同的材料。
圖3B所示的係用以形成一囊封劑140的剖視圖。如圖3B中所示，該囊封劑140可以被形成用以覆蓋絕緣層120的第一表面120a以及重新分佈結構130兩者。該些接觸觸墊370可以由被提供在囊封劑140之中的模具孔洞141露出。位在該重新分佈結構130之末端處的接觸觸墊370可以被該囊封劑140覆蓋，俾使得僅有某些接觸觸墊370會經由該些模具孔 洞141露出，並且其餘的區域可以***設在該囊封劑140以及該絕緣層120之間。和圖1B至1D中所示實質上相同的方式，該囊封劑140可以在形成假性圖樣10之後才被形成，接著會移除經由研磨而露出的假性圖樣10，從而會經由該些模具孔洞141露出該些接觸觸墊370。於一範例施行方式中，此些假性圖樣10的輪廓(可構形的)下方表面匹配該些接觸觸墊370的輪廓。或者，囊封劑140可以被形成用以覆蓋下面全部：絕緣層120的第一表面120a、該些接觸觸墊370、以及與該重新分佈結構130，並且舉例來說，可以利用雷射燒蝕、機械削切、蝕刻、…等在該囊封劑140之中形成多個模具孔洞141，從而露出該些接觸觸墊370。舉例來說，該囊封劑140可以包括一為可熱固化材料的環氧樹脂模製化合物(EMC)。
圖3C所示的係用以形成一導體層350的剖視圖。如圖3C中所示，該導體層350可以被形成用以覆蓋囊封劑140的模具孔洞141的所有內壁。於此範例情境中，該導體層350沒有被形成在經由囊封劑140露出的接觸觸墊370上，而僅被形成在該囊封劑140的模具孔洞141的內壁上。舉例來說，如同圖2的範例導體層250，並且不同於圖1E的導體層150，該導體層350可以被形成用以完全覆蓋模具孔洞141的內壁，但是並沒有被形成用以覆蓋該囊封劑140。此外，該導體層350還可以沿著該些模具孔洞141的內壁被電氣連接至該些接觸觸墊370。舉例來說，該導體層350及/或其形成可以和導體層150與250及/或其形成共用任何或全部特徵。舉例來說，該導體層350可以被形成具有一預設的厚度並且可以藉由下面方式來形成，但是，本揭示內容的觀點並不受限於此：利用無電極電鍍製程來形成一包括金、銀、鎳、鈦、及/或鎢的晶種層；圖樣化一光阻以覆蓋該導體層 350之潛在區域以外的區域；以及在經由該光阻所露出的晶種層上形成一銅電鍍層。
圖3D所示的係用以形成導體互連結構160的剖視圖。如圖3D中所示，該些導體互連結構160可以被形成在經由囊封劑140露出的接觸觸墊370上，其接著會被電氣連接至該些接觸觸墊370。該些導體互連結構160可以被形成用以完全填充囊封劑140的該些模具孔洞141。於圖中所示的實施例中，該些互連結構160雖然沒有被形成在導體層350的頂端表面上；但是，但是，本揭示內容的範疇並不受限於此。該導體層350***設在囊封劑140以及該些導體互連結構160之間，從而增加該囊封劑140以及該些導體互連結構160之間的耦合作用力。此外，經由該囊封劑140露出的該些接觸觸墊370還可以直接接觸該些導體互連結構160。
該些導體互連結構160可以包括輸入觸墊及/或輸出觸墊，用以讓該半導體封裝300被鑲嵌在一電子裝置的外板上、以封裝上封裝配置的方式被鑲嵌在另一電子裝置上、…等。舉例來說，該些導體互連結構160可以包括焊接凸塊或焊球，並且可以包括錫(Sn)/鉛(Pb)、無鉛的錫、或是雷同的材料，但是，本揭示內容的觀點並不受限於此。該些導體互連結構160可以藉由下面方式來形成：先暫時性將該些導體互連結構160鑲嵌在該些接觸觸墊370上，接著實施高溫回焊製程，從而熔融該些導體互連結構160與該些接觸觸墊370而讓它們被一體成形並且被電氣連接至該重新分佈結構130或是該些接觸觸墊111。
在該些導體互連結構160被形成之後，該半導體晶粒110、該觸墊介電層112、該絕緣層120、以及該囊封劑140便可以被切晶(或是單 體裁切)，用以將該晶圓分離成多個離散的半導體封裝300。
該半導體封裝300可以藉由利用具有高黏著性的導體層350黏著至該些導體互連結構160以及黏著至該囊封劑140的內壁(舉例來說，模具孔洞141的壁部)而降低因該些導體互連結構160和該囊封劑140之間的溫度差異與熱膨脹係數差異所造成的被施加至該些導體互連結構160的應力，從而改良該半導體封裝300的板級可靠度(BLR)。
參考圖4A至4G，圖中所示的係根據本揭示內容又一實施例之製造半導體封裝的方法。
圖4A所示的係用以製備一載板480的剖視圖。如圖4A中所示，該載板480具有一平面的第一表面480a以及一和該第一表面480a反向的平面的第二表面480b，並且在該第一表面480a之中會形成一晶粒鑲嵌部481或凹窩。所以，該晶粒鑲嵌部481包括一被形成在載板480的第一表面480a之中的內凹溝槽。舉例來說，該載板480雖然可以包括一為可熱固化材料的環氧樹脂模製化合物(EMC)；不過，本揭示內容的範疇並不受限於此。舉例來說，該載板480可以包括任何各式各樣的有機材料及/或無機材料，本文中會提供其非限制性範例。
圖4B所示的係用以鑲嵌一半導體晶粒110的剖視圖。如圖4B中所示，該半導體晶粒110可以被鑲嵌在載板480的晶粒鑲嵌部481上。該半導體晶粒110包括一平面的第一表面110a以及一和該第一表面110a反向的平面的第二表面110b，並且在該第一表面110a上會形成複數個接觸觸墊111。此外，該半導體晶粒110還可以包括一被形成在該第一表面110a上的觸墊介電層112，用以露出該複數個接觸觸墊111。該觸墊介電層112 可以包括下面任何各式各樣的介電材料，但是，本揭示內容的觀點並不受限於此，舉例來說：無機介電材料，舉例來說，Si3N4、SiO2、SiON、…等；及/或有機介電材料，舉例來說，聚醯亞胺(PI)、環苯丁烯(BCB)、聚苯并噁唑纖維(PBO)、雙馬來醯亞胺-三氮雜苯(BT)、酚系樹脂、環氧樹脂、…等。該觸墊介電層112可以下面任何各式各樣的方式來形成，舉例來說：印刷、旋塗、噴塗、燒結、熱氧化、物理氣相沉積(PVD)、化學氣相沉積(CVD)、離子氣相沉積、薄片層疊、…等。
對應於該第一表面110a以及該第二表面110b之間的距離的半導體晶粒110的厚度可以為50μm或更小。所以，具有小厚度的半導體晶粒110可以被鑲嵌在由可固化材料所製成的載板480上，從而有助於搬運該半導體晶粒110。
此外，圖中雖然並未顯示；不過，和圖1A中所示實質上相同的方式，一被電氣連接至該些接觸觸墊111中一或更多個接觸觸墊111的重新分佈結構130以及一***設在該重新分佈結構130及該觸墊介電層112之間的絕緣層120可以被形成在該半導體晶粒110上。
圖4C所示的係用以形成囊封劑440的剖視圖。囊封劑440及其形成可以和本文中所討論的其它囊封劑及其形成共用任何或全部特徵。如圖4C中所示，該囊封劑440可以完全覆蓋半導體晶粒110的觸墊介電層112，舉例來說，除了該觸墊介電層112中覆蓋該些接觸觸墊的部分以外。或者，該囊封劑440可以完全覆蓋該觸墊介電層112的至少一頂端側(及/或多個邊緣)。半導體晶粒110的該些接觸觸墊111可以經由被提供在該囊封劑440之中的模具孔洞441而露出。和圖1B至1D中所示實質上相同的 方式，該囊封劑440可以在形成假性圖樣10之後才被形成，接著會移除經由研磨而露出的假性圖樣10，從而會經由該些模具孔洞441露出該些接觸觸墊111。或者，囊封劑440可以覆蓋所有的觸墊介電層112以及該些接觸觸墊111，並且舉例來說，可以利用雷射燒蝕、機械削切、蝕刻、…等在該囊封劑440之中形成多個模具孔洞441，從而露出該些接觸觸墊111。舉例來說，該囊封劑440可以包括一為可熱固化材料的環氧樹脂模製化合物(EMC)。
圖4D所示的係用以形成一導體層450x的剖視圖。如圖4D中所示，該導體層450x可以被電氣連接至經由囊封劑440露出的接觸觸墊111。此外，該導體層450x亦可以覆蓋該囊封劑440的該些模具孔洞441的內壁以及該囊封劑440的第一表面440a。該導體層450x可以被形成具有一預設的厚度。該導體層450x及/或其形成可以和本文中所討論的其它導體層及/或其形成共用任何或全部特徵。舉例來說，該導體層450x可以利用下面方式來形成，但是，本揭示內容的觀點並不受限於此：藉由無電極電鍍製程來形成一包括金、銀、鎳、鈦、及/或鎢的晶種層；以及在電極電鍍製程中利用銅在該晶種層上形成一電鍍層。
圖4E所示的係用以形成導體互連結構470x的剖視圖。如圖4E中所示，該些導體互連結構470x可以被形成用以完全填充具有導體層450x的囊封劑440的模具孔洞441。該些導體互連結構470x及/或其形成可以和本文中所討論的其它互連結構及/或其形成共用任何或全部特徵。舉例來說，該些導體互連結構470x可以藉由利用刮板(squeegee)以導體膏來填充具有導體層450x的模具孔洞441並且藉由熱處置來固化而被形成。於其它 實施例中，該些導體互連結構470x可以利用下面其中一種方式來形成，但是，本揭示內容的觀點並不受限於此：通用的丸滴法、網印、電極電鍍、真空蒸發、電鍍、或是雷同的製程。
圖4F所示的係用以移除一部分的導體互連結構470x及/或導體層450x的剖視圖。如圖4F中所示，位在囊封劑440的第一表面440a以上的導體互連結構470x以及導體層450x的部分可以被移除。應該注意的係，一部分的囊封劑440(連同橫向相鄰的導體互連結構470x以及導體層450x部分)亦可以被移除。舉例來說，移除該些部分的導體互連結構470x以及導體層450x可以藉由蝕刻或研磨來實施；但是，本揭示內容的觀點並不受限於此。舉例來說，當藉由研磨來移除該些導體互連結構470x以及該導體層450x時，該些層可以藉由研磨被移除至該囊封劑440的第一表面440a露出為止。於此情境中，該些導體互連結構470的外露表面、該導體層450的外露表面、以及該囊封劑440的第一表面440a的外露表面可以為共平面。
於藉由蝕刻來移除該些導體互連結構470x以及該導體層450x的情況中，該些層可以被蝕刻至該些導體互連結構470x的外露表面以及該囊封劑440的第一表面440a的外露表面為共平面為止。移除在該囊封劑440的第一表面440a以上的導體層450x部分會導致被形成在每一個該些模具孔洞441之中的離散導體互連結構470可以和其它導體互連結構470電器分離。於此情境中，該導體層450可以***設在該囊封劑440以及該些導體互連結構470之間，從而增加該囊封劑440以及該些導體互連結構470之間的黏著效果。
圖4G所示的係用以形成導體互連結構460(舉例來說，導體 球、導體凸塊、…等)的剖視圖。如圖4G中所示，該些導體互連結構460可以被形成在導體互連結構470之上並且被電氣連接至該些導體互連結構470。該些導體互連結構460可以經由該些導體互連結構470以及該導體層450被電氣連接至半導體晶粒110的該些接觸觸墊111。舉例來說，要以封裝上封裝配置的方式被鑲嵌至另一電子裝置的該些導體互連結構460包括輸入觸墊及/或輸出觸墊，用以讓該半導體封裝400被鑲嵌在一電子裝置的外板上以。要以封裝上封裝配置的方式被鑲嵌至另一電子裝置的該些導體互連結構460雖然可以包括和該些導體互連結構470相同的材料；但是，本揭示內容的觀點並不受限於此。該些導體互連結構460可以藉由下面方式來形成：先暫時性將該些導體互連結構460(舉例來說，導體球、導體凸塊、…等)鑲嵌在該些導體互連結構470上，接著實施高溫回焊製程，從而熔融該些導體互連結構460與該些導體互連結構470而讓它們被一體成形並且經由導體層450被電氣連接至該半導體晶粒110的該些接觸觸墊111。
在該些導體互連結構460被形成之後，該半導體晶粒110、該觸墊介電層112、該絕緣層120、以及該囊封劑140便可以被切晶，用以將該晶圓分離成多個離散的半導體封裝400。
該半導體封裝400可以藉由形成具有高黏著性的導體層450黏著至該些導體互連結構460、黏著至該囊封劑440的內壁(舉例來說，模具孔洞141的壁部)、及/或黏著至該些導體互連結構470而降低可能被產生在不同材料之間(也就是，在囊封劑440與導體互連結構470之間，或是在囊封劑440與導體互連結構460之間)的應力(或是防止裂痕)。據此，該半導體封裝400的板級可靠度(BLR)便可以獲得改良。再者，該載板480還能夠達 成搬運該半導體晶粒的目的，尤其是在晶粒太薄而無法單獨搬運的情況中，並且還可以保護該晶粒使其不會受到環境應力或衝擊的破壞。
參考圖5，圖中所示的係根據本揭示內容又一實施例的半導體封裝的方法。圖5中所示的半導體封裝500包括一載板580、一半導體晶粒110、一囊封劑440、一導體層450、多個導體互連結構470、以及多個導體互連結構460。圖5中所示的半導體封裝500的半導體晶粒110、囊封劑440、導體層450、導體互連結構470、以及導體互連結構460可以實質上雷同於圖4G中所示的半導體封裝400。所以，下面關於半導體封裝500的說明會聚焦在載板580和圖4G中所示的半導體封裝400的載板480之間的差異。
載板580具有一平面的第一表面580a以及一和該第一表面580a反向的平面的第二表面580b。此外，一半導體晶粒110可以被鑲嵌在該載板580的第一表面580a上，其中，該半導體晶粒110的第二表面110b可以利用一黏著劑113被黏接至該載板580的第一表面580a。該黏著劑113可以包括一通用的液體環氧樹脂黏著劑、一黏著膜、一黏著膠帶、或是雷同的材料；但是，本揭示內容的觀點並不受限於此。該載板580可以包括一環氧樹脂模製化合物(EMC)，舉例來說，為可熱固化材料的環氧樹脂模製化合物(EMC)；不過，本揭示內容的範疇並不受限於此。舉例來說，該載板580可以包括任何各式各樣的有機材料及/或無機材料，本文中會提供其非限制性範例。
對應於該第一表面110a以及該第二表面110b之間的距離的半導體晶粒110的厚度可以為50μm或更小。依此方式，具有相對小厚度 的半導體晶粒110可以被鑲嵌在該載板580上，從而有助於搬運該半導體封裝500。
舉例來說，本揭示內容還可以提供一種半導體裝置500，其藉由完全裸露第一半導體晶粒110的頂端表面與側邊表面(舉例來說，在從載板580處移除之後，如果被移除的話)而擁有改良的熱輻射效能。
本揭示內容提供一種半導體封裝，其使用在電鍍的側壁之囊封劑開口中的接點並且可以包括：一半導體晶粒，其包括一具有一第一接觸觸墊的第一表面以及一和該第一表面反向的第二表面；一位在該半導體晶粒的第一表面上的重新分佈結構，其被電氣耦合至該第一接觸觸墊；一位在該重新分佈結構上的第二接觸觸墊；一囊封劑，用以囊封該重新分佈結構以及該第二接觸觸墊的一部分；一位在該第二接觸觸墊的一部分的上方的該囊封劑之中的開口；一導體層，其位在該囊封劑之中的該開口的該些側壁上並且接觸該第二接觸觸墊；以及一導體互連結構，其位在該第二接觸觸墊上並且填充沒有被該導體層填充的該囊封劑之中的該開口的其餘體積。該第二接觸觸墊可以具有一凸形形狀。
該導體層可以和該囊封劑的一頂端表面共平面。該導體互連結構可以延伸在該囊封劑的一頂端表面的上方。一第三接觸觸墊可以位在該半導體晶粒的第一表面上，在該半導體晶粒的該第一表面上有一介電層，其中，該介電層部分覆蓋該第二接觸觸墊以及該第三接觸觸墊。該重新分佈結構可以包括至少一導體層以及至少一介電層。在該囊封劑之中的開口可以包括有斜度的側壁。該第二接觸觸墊可以橫向延伸超越該囊封劑之中的該開口。
本揭示內容提供一種半導體封裝及其製造方法，其可以藉由在一囊封劑以及該些互連結構(舉例來說，焊球、凸塊、…等)之間形成一高黏著性的導體層而降低因該些互連結構和該囊封劑之間的溫度差異與熱膨脹係數差異所造成的被施加至該些互連結構的應力。
根據本揭示內容的一項觀點，本發明提供一種半導體封裝，其包含：形成一囊封劑，用以覆蓋一半導體晶粒，該半導體晶粒包含被形成在其第一表面的複數個焊墊並且經由被提供在該囊封劑之中的模具孔洞將該些焊墊裸露於外面；於被提供在該囊封劑之中的模具孔洞的內壁上形成一導體層；以及形成互連結構(舉例來說，導體球、導體凸塊、…等)，用以完全填充具有該導體層的模具孔洞，其中，該些導體互連結構被電氣連接至該些焊墊。
根據本揭示內容的另一項觀點，本發明提供一種半導體封裝，其包含：一半導體晶粒，該半導體晶粒包含被形成在其第一表面的複數個焊墊；一囊封劑，其被形成用以覆蓋該半導體晶粒的該第一表面並且包含多個模具孔洞，用以將該半導體晶粒的該些焊墊裸露於外面；一導體層，其被形成用以覆蓋該囊封劑的該些模具孔洞的內壁；以及導體互連結構，其被形成用以完全填充具有該導體層的模具孔洞，其中，該導體層***設在該些導體互連結構以及該囊封劑之間。
根據本揭示內容的又一項觀點，本發明提供一種半導體封裝的製造方法，其中，該製造方法包含：形成一囊封劑，用以覆蓋一半導體晶粒，該半導體晶粒包含被形成在其第一表面的複數個焊墊並且經由從該囊封劑的第一表面處所形成的模具孔洞將該些焊墊裸露至該半導體晶粒； 形成一具有預設厚度的導體層，用以覆蓋經由該些模具孔洞露出的該囊封劑的第一表面以及該些接觸觸墊和該些模具孔洞；形成導體互連結構，用以完全填充具有該導體層的模具孔洞；移除被形成在該囊封劑的第一表面上的該導體層，以便露出該囊封劑的該第一表面；以及形成導體互連結構，使其被電氣連接至該些焊接互連結構。
如上面所述，在根據本揭示內容的半導體封裝及其製造方法中，因導體互連結構(舉例來說，焊球、凸塊、…等)和一囊封劑之間的溫度差異與熱膨脹係數差異所造成的被施加至該些導體互連結構的應力能夠藉由在該囊封劑以及該些導體互連結構之間形成一高黏著性的導體層而降低。
此外，在根據本揭示內容的半導體封裝及其製造方法中，該囊封劑會藉由研磨而被移除，從而使得該囊封劑具有該半導體封裝所需要的均勻厚度。
進一步言之，在根據本揭示內容的半導體封裝及其製造方法中，一具有相對小厚度的半導體晶粒會被鑲嵌在一由可固化材料製成的載板上，從而幫助搬運該半導體封裝。
本文雖然已經參考特定範例實施例說明過支援本揭示內容的各項觀點；不過，熟習本技術的人士便會瞭解，可以進行各種變更並且可以等效例來取代，其並不會脫離本揭示內容的範疇。此外，亦可以進行許多修飾，以便讓一特殊情況或材料適應於本揭示內容的教示內容，但卻不會脫離本揭示內容的範疇。所以，本揭示內容並不希望受限於已揭的特殊範例實施例；相反地，本揭示內容希望涵蓋落在隨附申請專利範圍的範 疇裡面的所有實施例。
110‧‧‧半導體晶粒
111‧‧‧接觸觸墊
112‧‧‧觸墊介電層
120‧‧‧絕緣層
130‧‧‧重新分佈結構
140‧‧‧囊封劑
160‧‧‧導體互連結構
200‧‧‧半導體封裝
250‧‧‧導體層

Claims (20)

  1. 一種半導體裝置，其包括：一半導體晶粒，其包括一具有一接觸觸墊的第一表面以及一和該第一表面反向的第二表面；一位在該半導體晶粒的第一表面上的重新分佈結構，其被電氣耦合至該接觸觸墊；一囊封劑，用以囊封該重新分佈結構；一位在該重新分佈結構的一部分的上方的該囊封劑之中的開口；一位在該囊封劑之中的該開口的該些側壁上的導體層；以及一導體互連結構，其位在該重新分佈結構的該部分的上方並且填充沒有被該導體層填充的該囊封劑之中的該開口的其餘體積。
  2. 根據申請專利範圍第1項的半導體裝置，其中，該導體層包括一晶種層以及被電鍍在該晶種層上的至少一或更多個金屬層。
  3. 根據申請專利範圍第1項的半導體裝置，其中，位於該導體互連結構以及該重新分佈結構的該部分之間的導體層具有一凸形形狀。
  4. 根據申請專利範圍第1項的半導體裝置，其中，該導體層和該囊封劑的一頂端表面共平面。
  5. 根據申請專利範圍第1項的半導體裝置，其中，該導體層延伸在該囊封劑的一頂端表面的上方並且沿著該囊封劑的該頂端表面橫向延伸。
  6. 根據申請專利範圍第5項的半導體裝置，其中，該導體互連結構橫向延伸超越該囊封劑之中的該開口並且延伸在沿著該囊封劑之該頂端表面橫向延伸的導體層上。
  7. 根據申請專利範圍第1項的半導體裝置，其中，該導體互連結構延伸在該囊封劑的一頂端表面的上方。
  8. 根據申請專利範圍第1項的半導體裝置，其包括一位在該半導體晶粒的第一表面上的第二接觸觸墊，在該半導體晶粒的該第一表面上有一介電層，該介電層部分覆蓋該接觸觸墊以及該第二接觸觸墊。
  9. 一種半導體裝置，其包括：一半導體晶粒，其包括一具有一第一接觸觸墊的第一表面以及一和該第一表面反向的第二表面；一位在該半導體晶粒的第一表面上的重新分佈結構，其被電氣耦合至該第一接觸觸墊；一位在該重新分佈結構上的第二接觸觸墊；一囊封劑，用以囊封該重新分佈結構以及該第二接觸觸墊的一部分；一位在該第二接觸觸墊的一部分的上方的該囊封劑之中的開口；一導體層，其位在該囊封劑之中的該開口的該些側壁上並且接觸該第二接觸觸墊；以及一導體互連結構，其位在該第二接觸觸墊上並且填充沒有被該導體層填充的該囊封劑之中的該開口的其餘體積。
  10. 根據申請專利範圍第9項的半導體裝置，其中，該第二接觸觸墊具有一凸形形狀。
  11. 根據申請專利範圍第9項的半導體裝置，其中，該導體層和該囊封劑的一頂端表面共平面。
  12. 根據申請專利範圍第9項的半導體裝置，其中，該導體互連結構延 伸在該囊封劑的一頂端表面的上方。
  13. 根據申請專利範圍第9項的半導體裝置，其包括一位在該半導體晶粒的第一表面上的第三接觸觸墊，在該半導體晶粒的該第一表面上有一介電層，該介電層部分覆蓋該第二接觸觸墊以及該第三接觸觸墊。
  14. 根據申請專利範圍第9項的半導體裝置，其中，該重新分佈結構包括至少一導體層以及至少一介電層。
  15. 根據申請專利範圍第9項的半導體裝置，其中，在該囊封劑之中的開口包括有斜度的側壁。
  16. 根據申請專利範圍第9項的半導體裝置，其中，該導體層包括一晶種層以及被電鍍在該晶種層上的至少一或更多個金屬層。
  17. 一種製造半導體裝置的方法，該方法包括：提供一半導體晶粒，其包括一具有一接觸觸墊的第一表面以及一和該第一表面反向的第二表面；在該半導體晶粒的第一表面上形成一重新分佈結構，其被電氣耦合至該接觸觸墊；運用一囊封劑囊封該重新分佈結構；在該重新分佈結構的一部分的上方的該囊封劑之中形成一開口；在該囊封劑之中的該開口的該些側壁上形成一導體層；以及將一導體互連結構放置在該重新分佈結構的該部分的上方，該導體互連結構填充沒有被該導體層填充的該囊封劑之中的該開口的其餘體積。
  18. 根據申請專利範圍第17項的方法，其包括薄化該囊封劑，使得該導體互連結構的一頂端表面與該囊封劑的一頂端表面共平面。
  19. 根據申請專利範圍第17項的方法，其在該囊封劑的一頂端表面上形成該導體層。
  20. 根據申請專利範圍第17項的方法，其包括在囊封該重新分佈結構之前先在該第一半導體晶粒的該第一表面上以及該接觸觸墊的一部分上形成一介電層。
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