TW201621993A - Processing device and wafer processing method - Google Patents
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本發明是有關於加工晶圓之加工裝置及在加工裝置上加工晶圓之方法。 The present invention relates to a processing apparatus for processing wafers and a method of processing wafers on a processing apparatus.
作為對被加工物之晶圓施行所期望之加工的裝置，所使用的有例如雷射加工裝置。雷射加工裝置至少具備有保持晶圓之加工台，和對保持於加工台上之晶圓照射雷射光之雷射光照射頭，並從保持於加工台上之晶圓的上方或下方照射雷射光來對晶圓進行雷射加工(例如燒蝕加工)。雷射加工時，因為在照射雷射光的區域中會產生碎屑，因此會在例如晶圓的表面上事先被覆保護膜，以防止碎屑附著在元件上。 As the means for performing the desired processing on the wafer of the workpiece, for example, a laser processing apparatus is used. The laser processing apparatus includes at least a processing stage for holding a wafer, and a laser light irradiation head that irradiates the wafer held on the processing stage with laser light, and irradiates the laser light from above or below the wafer held on the processing stage. To perform laser processing on the wafer (such as ablation processing). At the time of laser processing, since debris is generated in a region where laser light is irradiated, a protective film is previously coated on the surface of, for example, a wafer to prevent debris from adhering to the element.
又，進行雷射加工時，如果加工台上附著有灰塵等之廢屑時，保持於加工台上之晶圓的高度就會依位置而不同，並變得無法將雷射光的聚光點定位在所期望的深度位置上。因此，已有具備將附著於加工台上之廢屑除去之清掃裝置的雷射加工裝置的技術方案被提出(參照例如下述的專利文獻1)。此清掃裝置具備有被支撐成可在相對於 加工台的上表面為垂直之方向上移動的滾輪支撐框體、可旋轉地被支撐在滾輪支撐框體上的第1黏著滾輪，以及與第1黏著滾輪相接觸而配置並且可旋轉地被支撐在滾輪支撐框體上的第2黏著滾輪。並且，此清掃裝置是形成為以下之構成：使附著在加工台上的廢屑黏著在第1黏著滾輪的外周面上，再將黏著在第1黏著滾輪上的廢屑黏著並轉移至第2黏著滾輪的外周面上。 Further, when laser processing is performed, if the waste debris such as dust adheres to the processing table, the height of the wafer held on the processing table varies depending on the position, and the spot of the laser light cannot be positioned. At the desired depth position. Therefore, a laser processing apparatus including a cleaning device that removes waste debris adhering to a processing table has been proposed (see, for example, Patent Document 1 below). The cleaning device is provided to be supported so as to be relative to The upper surface of the processing table is a roller support frame that moves in a vertical direction, a first adhesive roller that is rotatably supported on the roller support frame, and is disposed in contact with the first adhesive roller and rotatably supported The second adhesive roller on the roller support frame. Further, the cleaning device is configured to adhere the waste adhered to the processing table to the outer peripheral surface of the first adhesive roller, and then adhere the waste adhered to the first adhesive roller to the second. Adhesive on the outer peripheral surface of the roller.
專利文獻1：日本專利特開2008-147505號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2008-147505
然而，即使已使用如上所述之清掃裝置清掃過加工台的上表面，因為最終是以第2黏著滾輪將工作台上的廢屑除去，因此至少必須進行第2黏著滾輪的清掃或第2黏著滾輪的更換，作業上較麻煩。又，因為是使黏著滾輪接觸工作台的上表面來進行清掃，因此無法高速地進行加工台的清掃而導致作業效率較低。 However, even if the upper surface of the processing table has been cleaned using the cleaning device as described above, since the waste on the table is finally removed by the second adhesive roller, at least the cleaning of the second adhesive roller or the second adhesive must be performed. The replacement of the roller is troublesome in operation. Further, since the adhesive roller is brought into contact with the upper surface of the table to perform cleaning, the cleaning of the processing table cannot be performed at a high speed, resulting in low work efficiency.
本發明是有鑒於上述之情況而作成的發明，目的在於有效率地進行用於避免在晶圓的下表面和工作台的上表面之間夾入廢屑的清掃。 The present invention has been made in view of the above circumstances, and an object thereof is to efficiently perform cleaning for avoiding the interposition of waste between a lower surface of a wafer and an upper surface of a table.
第一發明是具備保持板狀之晶圓的加工台、使該 加工台走行的加工進給手段、對保持於該加工台上之晶圓施行預定之加工的加工手段，以及將晶圓保持以搬入該加工台的搬入手段的加工裝置，其特徵在於具備：在直到該搬入手段將晶圓搬入到該加工台為止的期間，吹送空氣來洗淨晶圓之下表面的第1洗淨手段；以及在以該加工台保持藉由該搬入手段所搬入的晶圓之前，吹送空氣來洗淨該加工台之上表面的第2洗淨手段。 The first invention is a processing table having a wafer-shaped wafer A processing device for processing a processing table, a processing means for performing a predetermined processing on a wafer held on the processing table, and a processing device for holding a wafer into a loading means of the processing table, characterized in that: a first cleaning means for blowing the air to clean the lower surface of the wafer during the loading means to carry the wafer into the processing stage; and holding the wafer carried by the loading means by the processing table Previously, air was blown to clean the second cleaning means on the upper surface of the processing table.
該搬入手段還具備在與該加工台之上表面平行的方向上動作的搬送機構，和朝接近及離開該加工台之上表面的方向動作的昇降機構。 The loading means further includes a conveying mechanism that operates in a direction parallel to the upper surface of the processing table, and an elevating mechanism that moves in a direction approaching and moving away from the upper surface of the processing table.
該第1洗淨手段具備相對於該搬入手段所保持之晶圓的下表面為平行且在相對於該搬送機構之移動方向為交叉的方向上延伸的第1洗淨管、配置在該第1洗淨管之延伸方向上的複數個第1噴射口，以及連通該第1噴射口和空氣供給源的連通管。 The first cleaning means includes a first cleaning pipe that is parallel to the lower surface of the wafer held by the loading means and that extends in a direction intersecting with the moving direction of the conveying means, and is disposed in the first a plurality of first injection ports in the extending direction of the cleaning pipe, and a communication pipe that communicates the first injection port and the air supply source.
該第2洗淨手段具備相對於該加工台的上表面為平行且在相對於該加工進給手段之加工進給方向為交叉的方向上延伸的第2洗淨管、配置在該第2洗淨管之延伸方向上的複數個第2噴射口，以及連通該第2噴射口和空氣供給源的連通管。 The second cleaning means includes a second cleaning pipe that is parallel to the upper surface of the processing table and that extends in a direction intersecting with the machining feed direction of the machining feed means, and is disposed in the second washing a plurality of second injection ports in the extending direction of the clean pipe, and a communication pipe that communicates the second injection port and the air supply source.
且在以該第2洗淨手段洗淨該加工台之上表面時，並以第1洗淨手段洗淨晶圓之下表面。 When the upper surface of the processing table is washed by the second cleaning means, the lower surface of the wafer is cleaned by the first cleaning means.
較理想的是，上述加工裝置是使前述加工進給手段的加工進給方向和前述搬入手段之前述搬送機構的移動 方向為相同方向，且使前述第1洗淨管和前述第2洗淨管一體化而構成。 Preferably, the processing device is a processing feed direction of the processing feed means and a movement of the transfer mechanism of the loading means The direction is the same direction, and the first cleaning tube and the second cleaning tube are integrated.
較理想的是，上述加工裝置還具備調整由前述第 1噴射口朝向晶圓噴射之空氣的噴射方向的角度的第1角度調整機構，和調整由前述第2噴射口朝向前述加工台噴射之空氣的噴射方向的角度的第2角度調整機構。 Preferably, the processing device further has an adjustment by the foregoing A first angle adjusting mechanism that adjusts an angle of an ejection port toward an ejection direction of air to which the wafer is ejected, and a second angle adjustment mechanism that adjusts an angle of an ejection direction of the air ejected toward the processing table by the second ejection port.
又，較理想的是，上述加工裝置具備調整由前述 第1噴射口所噴射的空氣之流量的第1流量調整手段、調整該第1噴射口和晶圓的下表面之距離的第1高度調整手段、調整由前述第2噴射口所噴射的空氣之流量的第2流量調整手段，以及調整該第2噴射口和前述加工台的上表面之距離的第2高度調整手段。 Moreover, it is preferable that the processing device has an adjustment by the foregoing a first flow rate adjusting means for adjusting the flow rate of the air injected by the first injection port, a first height adjusting means for adjusting the distance between the first injection port and the lower surface of the wafer, and adjusting the air injected by the second injection port The second flow rate adjusting means of the flow rate and the second height adjusting means for adjusting the distance between the second injection port and the upper surface of the processing table.
此外，較理想的是，上述加工裝置具備以前述加 工台之中心為軸心使該加工台旋轉的工作台旋轉機構，且是在該工作台旋轉機構使該加工台旋轉時，藉由前述第2洗淨手段洗淨該加工台的上表面。 In addition, it is preferable that the processing device described above is provided with the aforementioned addition The center of the table is a table rotation mechanism that rotates the processing table with the axis, and when the table rotation mechanism rotates the table, the upper surface of the table is cleaned by the second cleaning means.
第二發明是使用了上述任一個加工裝置的晶圓之加工方法，其包含：晶圓洗淨步驟，在直到藉由前述搬入手段將晶圓搬入到前述加工台並使該加工台保持晶圓為止的期間，由前述第1噴射口朝向晶圓的下表面吹送空氣以洗淨晶圓之下表面；加工台洗淨步驟，由前述第2噴射口朝該加工台的上表面吹送空氣以洗淨該加工台之上表面；以及 加工步驟，在已實施該晶圓洗淨步驟和該加工台洗淨步驟後，藉由前述加工手段對該加工台所保持之晶圓進行預定之加工。 A second invention is a method of processing a wafer using any of the above processing apparatuses, comprising: a wafer cleaning step of loading a wafer into the processing table by the loading means and holding the processing stage In the period until the first injection port blows air toward the lower surface of the wafer to clean the lower surface of the wafer, and the processing table is cleaned, the second injection port blows air toward the upper surface of the processing table to wash Net the surface above the processing table; In the processing step, after the wafer cleaning step and the processing table cleaning step have been performed, the wafer held by the processing station is subjected to predetermined processing by the processing means.
第一發明之加工裝置，因為具備在直到搬入手段將晶圓搬入到加工台為止之期間，對搬入手段所保持之晶圓的下表面噴射空氣而進行洗淨的第1洗淨手段，和在以加工台保持被搬入手段搬入的晶圓之前，對加工台的上表面噴射空氣而進行洗淨的第2洗淨手段，因此可以在直到以搬入手段將晶圓載置到加工台之前，將晶圓的下表面和加工台的上表面洗淨。藉此，因為可以將已洗淨的晶圓搬入已洗淨的加工台，因此不會有在加工台和晶圓之間夾入廢屑之情形，而可以使作業效率變好。並且，在藉由加工手段對晶圓進行加工時，由於不會有以加工台保持之晶圓的高度改變的情形，因此可以對晶圓進行所期望的加工。 The processing apparatus according to the first aspect of the invention includes the first cleaning means for ejecting air to the lower surface of the wafer held by the loading means, and cleaning the wafer during the loading of the wafer into the processing stage, and The second cleaning means for ejecting air to the upper surface of the processing table and cleaning the wafer before the processing table is held by the loading means can be used until the wafer is placed on the processing table by the loading means. The lower surface of the circle and the upper surface of the processing table are washed. Thereby, since the cleaned wafer can be carried into the cleaned processing table, there is no possibility of interposing waste between the processing table and the wafer, and work efficiency can be improved. Further, when the wafer is processed by the processing means, since the height of the wafer held by the processing table does not change, the desired processing can be performed on the wafer.
當上述加工裝置將上述第1洗淨管和第2洗淨管做成一體而形成時，可以在不將裝置大型化的情形下，在直到以搬入手段將晶圓載置在加工台上之前，將晶圓的下表面和加工台的上表面洗淨。 When the processing apparatus is formed by integrating the first cleaning tube and the second cleaning tube, the processing unit can be placed on the processing table until the wafer is placed by the loading means without increasing the size of the apparatus. The lower surface of the wafer and the upper surface of the processing table are washed.
當上述加工裝置具備調整由上述第1噴射口朝向晶圓噴射之空氣的噴射方向的角度的第1角度調整機構，和調整由上述第2噴射口朝向上述加工台噴射之空氣的噴射方向的角度的第2角度調整機構時，不但可以將對晶圓之下表面及加工台之上表面的空氣噴射方向調整到最佳的方向， 還可以進行晶圓的下表面及加工台的上表面的洗淨。 The processing apparatus includes a first angle adjustment mechanism that adjusts an angle of an ejection direction of air that is ejected toward the wafer by the first ejection port, and an angle that adjusts an ejection direction of air that is ejected toward the processing table by the second ejection port. When the second angle adjustment mechanism is used, not only the air ejection direction on the lower surface of the wafer and the upper surface of the processing table can be adjusted to an optimum direction. It is also possible to clean the lower surface of the wafer and the upper surface of the processing table.
又，當上述加工裝置具備調整由上述第1噴射口 所噴射的空氣之流量的第1流量調整手段、調整該第1噴射口和晶圓的下表面之距離的第1高度調整手段、調整由上述第2噴射口所噴射之空氣的流量的第2流量調整手段，以及調整該第2噴射口和上述加工台的上表面之距離的第2高度調整手段時，可以因應由第1噴射口所噴射之空氣的流量來將第1噴射口和晶圓的下表面的距離調整成所期望的距離，並可以因應第1洗淨管的高度來調節由第1噴射口所噴射之空氣的流量。又，可以因應由第2噴射口所噴射之空氣的流量來將第2噴射口和加工台的上表面的距離調整成所期望的距離，並可以因應第2洗淨管的高度來調節由第2噴射口所噴射之空氣的流量。 Further, when the processing device is provided with the adjustment of the first injection port The first flow rate adjusting means for the flow rate of the injected air, the first height adjusting means for adjusting the distance between the first injection port and the lower surface of the wafer, and the second flow rate for adjusting the flow rate of the air injected by the second injection port When the flow rate adjusting means and the second height adjusting means for adjusting the distance between the second injection port and the upper surface of the processing table, the first injection port and the wafer can be used in accordance with the flow rate of the air injected by the first injection port. The distance of the lower surface is adjusted to a desired distance, and the flow rate of the air injected by the first injection port can be adjusted in accordance with the height of the first cleaning pipe. Further, the distance between the second injection port and the upper surface of the processing table can be adjusted to a desired distance in accordance with the flow rate of the air ejected by the second ejection port, and the second cleaning tube can be adjusted in accordance with the height of the second cleaning tube. 2 The flow rate of the air injected by the injection port.
此外，當上述加工裝置具備以上述加工台之中心 為軸心旋轉的工作台旋轉機構時，就可以一邊使加工台旋轉，一邊由第2洗淨手段的第2噴射口朝向加工台的上表面噴射空氣，而能夠有效地洗淨加工台的上表面。 Further, when the processing device is provided with the center of the processing table When the table rotation mechanism for the axis is rotated, the second injection port of the second cleaning means can be ejected toward the upper surface of the processing table while rotating the processing table, thereby effectively cleaning the upper surface of the processing table. surface.
第二發明因為是使用上述之任一個加工裝置，在 直到藉由上述搬入手段將晶圓搬入到加工台並使該加工台保持晶圓為止的期間，實施晶圓洗淨步驟、加工台洗淨步驟，因此可以對晶圓的下表面及加工台的上表面噴射空氣來除去附著在晶圓的下表面及加工台的上表面的廢屑。其後，因為是以洗淨後的加工台保持洗淨後之晶圓來實施加工步驟，因此可以在不會受到廢屑之不良影響的情形下， 正確地進行所期望的加工。 The second invention is because any one of the above processing devices is used, The wafer cleaning step and the processing table cleaning step are performed until the wafer is carried into the processing table by the loading means and the wafer is held by the processing table. Therefore, the lower surface of the wafer and the processing table can be processed. The upper surface ejects air to remove debris adhering to the lower surface of the wafer and the upper surface of the processing table. Thereafter, since the processing step is performed by holding the cleaned wafer at the processing station after the cleaning, it is possible to prevent the adverse effects of waste debris. Properly perform the desired processing.
1、1a、1b、1c、2‧‧‧加工裝置 1, 1a, 1b, 1c, 2‧‧‧ processing equipment
10、10a‧‧‧搬入手段 10, 10a‧‧‧ means of moving in
100‧‧‧保持部 100‧‧‧ Keeping Department
101‧‧‧保持面 101‧‧‧ Keep face
102‧‧‧臂部 102‧‧‧arms
103‧‧‧軸部 103‧‧‧Axis
11‧‧‧搬送機構 11‧‧‧Transportation agency
110‧‧‧導軌 110‧‧‧rails
111‧‧‧移動部 111‧‧‧Mobile Department
12‧‧‧昇降機構 12‧‧‧ Lifting mechanism
120‧‧‧支撐部 120‧‧‧Support
13‧‧‧洗淨區域 13‧‧‧Clean area
14‧‧‧搬送手段 14‧‧‧Transfer means
15‧‧‧中心軸 15‧‧‧ center axis
16‧‧‧工作台旋轉機構 16‧‧‧Worktable rotation mechanism
2a‧‧‧裝置基座 2a‧‧‧ device base
20、20a、20b‧‧‧第1洗淨手段 20, 20a, 20b‧‧‧1st cleaning means
21‧‧‧第1洗淨管 21‧‧‧1st cleaning tube
21a、26a‧‧‧導管 21a, 26a‧‧‧ catheter
21b、26b‧‧‧窗部 21b, 26b‧‧‧ Window Department
22、42、72‧‧‧第1噴射口 22, 42, 72‧ ‧ the first injection port
23‧‧‧第1連通管 23‧‧‧1st connecting pipe
24‧‧‧第1閥 24‧‧‧1st valve
25、25a、25b‧‧‧第2洗淨手段 25, 25a, 25b‧‧‧2nd cleaning means
26‧‧‧第2洗淨管 26‧‧‧2nd cleaning tube
27、43、73‧‧‧第2噴射口 27, 43, 73‧ ‧ the second injection port
28‧‧‧第2連通管 28‧‧‧2nd connecting pipe
29‧‧‧第2閥 29‧‧‧2nd valve
3‧‧‧晶圓盒 3‧‧‧ wafer cassette
30‧‧‧空氣供給源 30‧‧‧Air supply source
4‧‧‧暫置區域 4‧‧‧ Temporary zone
40、70‧‧‧洗淨手段 40, 70‧‧‧ Washing means
41、71‧‧‧洗淨管 41, 71‧‧‧clean tube
44‧‧‧連通管 44‧‧‧Connected pipe
45‧‧‧閥 45‧‧‧ valve
5‧‧‧搬出入部 5‧‧‧ Move in and out
50‧‧‧第1流量調整手段 50‧‧‧1st flow adjustment means
51‧‧‧第1流量調整閥 51‧‧‧1st flow adjustment valve
52‧‧‧第1控制部 52‧‧‧1st Control Department
53‧‧‧第2流量調整手段 53‧‧‧2nd flow adjustment means
54‧‧‧第2流量調整閥 54‧‧‧2nd flow adjustment valve
55‧‧‧第2控制部 55‧‧‧2nd Control Department
6、6a‧‧‧加工台 6, 6a‧‧‧ processing table
60‧‧‧第1高度調整手段 60‧‧‧1st height adjustment means
61、64‧‧‧調整部 61, 64‧‧‧ adjustment department
62、65‧‧‧支撐柱 62, 65‧‧‧ support column
63‧‧‧第2高度調整手段 63‧‧‧2nd height adjustment means
7‧‧‧加工台的上表面(保持面) 7‧‧‧ Upper surface of the processing table (holding surface)
8、8a‧‧‧加工進給手段 8, 8a‧‧‧ processing feed means
9、9a‧‧‧加工手段 9, 9a‧‧‧ processing methods
A‧‧‧箭頭 A‧‧‧ arrow
W‧‧‧晶圓 W‧‧‧ wafer
Wa‧‧‧晶圓的上表面 Wa‧‧‧ wafer upper surface
Wb‧‧‧晶圓的下表面 The lower surface of the Wb‧‧ wafer
+X、-X、+Y、-Y、+Z、-Z‧‧‧方向 +X, -X, +Y, -Y, +Z, -Z‧‧‧ directions
圖1是顯示加工裝置之第1例的構成的剖面圖。 Fig. 1 is a cross-sectional view showing a configuration of a first example of a processing apparatus.
圖2是顯示使用加工裝置之第1例來實施晶圓洗淨步驟及加工台洗淨步驟之狀態的剖面圖。 2 is a cross-sectional view showing a state in which a wafer cleaning step and a processing table cleaning step are performed using the first example of the processing apparatus.
圖3是顯示加工裝置之第2例的構成的剖面圖。 3 is a cross-sectional view showing a configuration of a second example of the processing apparatus.
圖4是顯示洗淨手段的角度調整機構之一例的立體圖。 4 is a perspective view showing an example of an angle adjusting mechanism of the washing means.
圖5是顯示使用加工裝置之第2例來實施晶圓洗淨步驟及加工台洗淨步驟之狀態的剖面圖。 5 is a cross-sectional view showing a state in which a wafer cleaning step and a processing table cleaning step are performed using a second example of the processing apparatus.
圖6是顯示加工裝置之第3例的構成的剖面圖。 Fig. 6 is a cross-sectional view showing a configuration of a third example of the processing apparatus.
圖7是顯示加工裝置之第4例的構成的剖面圖。 Fig. 7 is a cross-sectional view showing a configuration of a fourth example of the processing apparatus.
圖8是顯示加工裝置之第5例的構成的立體圖。 Fig. 8 is a perspective view showing a configuration of a fifth example of the processing apparatus.
圖9是顯示使用加工裝置之第5例來實施晶圓洗淨步驟之狀態的剖面圖。 Fig. 9 is a cross-sectional view showing a state in which a wafer cleaning step is performed using a fifth example of the processing apparatus.
圖10是顯示使用加工裝置之第5例來實施加工台洗淨步驟之狀態的剖面圖。 Fig. 10 is a cross-sectional view showing a state in which a processing table cleaning step is performed using a fifth example of the processing apparatus.
圖1所示之加工裝置1，是對板狀的晶圓施行預定之加工的加工裝置之一例，並具備有具有用於保持晶圓之保持面7的加工台6、使加工台6水平地走行的加工進給手段8、對保持於加工台6之上表面7之晶圓施行雷射加工的加工手 段9，以及保持晶圓以對加工台6搬入晶圓的搬入手段10。 The processing apparatus 1 shown in FIG. 1 is an example of a processing apparatus that performs predetermined processing on a plate-shaped wafer, and includes a processing table 6 having a holding surface 7 for holding a wafer, and the processing table 6 is horizontally The processing feed means for traveling, the processing hand for performing laser processing on the wafer held on the upper surface 7 of the processing table 6 The segment 9 and the loading means 10 for holding the wafer to carry the wafer into the processing table 6 are carried out.
加工台6上連接有圖未示之吸引源。加工台6具備 有以其中心軸15為中心使其朝預定方向旋轉之工作台旋轉機構16。工作台旋轉機構16至少具有馬達，而可以用預定之旋轉速度使加工台6旋轉。 A suction source (not shown) is connected to the processing table 6. Processing table 6 is provided There is a table rotating mechanism 16 that rotates in the predetermined direction about the center axis 15 thereof. The table rotating mechanism 16 has at least a motor, and the processing table 6 can be rotated at a predetermined rotational speed.
搬入手段10具備保持部100，該保持部100具有用 於保持晶圓之保持面101。又，搬入手段10具備在與加工台6之上表面7成為平行之方向(X軸方向)上動作之搬送機構11，和對加工台6朝相對於上表面7接近及離開之方向(Z軸方向)動作的昇降機構12。搬送機構11具備在X軸方向上延伸之導軌110，和使保持部100沿著導軌110在X軸方向上來回移動的移動部111。昇降機構12與移動部111連結，並具有支撐保持部100之支撐部120。並且，藉由作動搬送機構11、使移動部111在X軸方向上移動，可以使保持部100在X軸方向上移動。 The loading device 10 includes a holding portion 100, and the holding portion 100 has a function The holding surface 101 of the wafer is maintained. Further, the loading means 10 includes a conveying mechanism 11 that operates in a direction (X-axis direction) parallel to the upper surface 7 of the processing table 6, and a direction in which the processing table 6 approaches and separates from the upper surface 7 (Z-axis) The direction of the movement of the lifting mechanism 12. The transport mechanism 11 includes a guide rail 110 that extends in the X-axis direction, and a moving portion 111 that moves the holding portion 100 back and forth along the guide rail 110 in the X-axis direction. The elevating mechanism 12 is coupled to the moving portion 111 and has a support portion 120 that supports the holding portion 100. Further, by moving the transport mechanism 11 and moving the moving portion 111 in the X-axis direction, the holding portion 100 can be moved in the X-axis direction.
加工裝置1具備有在直到搬入手段10將晶圓搬入 加工台6為止的期間，對晶圓的下表面吹送空氣來洗淨下表面的第1洗淨手段20，和對加工台6的上表面7吹送空氣來洗淨上表面7的第2洗淨手段25。 The processing apparatus 1 is provided with the wafer being carried in until the loading means 10 During the processing of the processing table 6, the first cleaning means 20 for blowing the air to the lower surface of the wafer to clean the lower surface, and the second cleaning for the upper surface 7 by blowing air to the upper surface 7 of the processing table 6 Means 25.
第1洗淨手段20具備有相對於搬入手段10所保持 之晶圓的下表面為平行，且在相對於搬送機構11之移動方向為交叉的方向上延伸的第1洗淨管21、沿著第1洗淨管21之延伸方向形成的複數個第1噴射口22，以及透過第1閥24連通第1噴射口22和空氣供給源30的第1連通管23。此第1洗 淨手段20可藉由將第1閥24打開，而通過第1連通管23從第1噴射口22噴射出空氣。 The first cleaning means 20 is provided with respect to the loading means 10 The lower surface of the wafer is parallel, and the first cleaning tube 21 extending in the direction in which the moving direction of the conveying mechanism 11 intersects, and the plurality of first ones formed along the extending direction of the first cleaning tube 21 The injection port 22 and the first communication pipe 23 that communicates with the first injection port 22 and the air supply source 30 through the first valve 24 are provided. This 1st wash The net means 20 can eject air from the first injection port 22 through the first communication pipe 23 by opening the first valve 24.
第2洗淨手段25是配置於第1洗淨手段20的附近。 第2洗淨手段25具備有相對於加工台6的上表面7為平行，且在相對於由加工進給手段8所形成之加工台6的加工進給方向為交叉的方向上延伸的第2洗淨管26、沿著第2洗淨管26之延伸方向形成的複數個第2噴射口27，以及透過第2閥29連通第2噴射口27和空氣供給源30的第2連通管28。可以藉由將此第2閥29打開，而通過第2連通管28從第2噴射口27噴射出空氣。上述延伸方向中的第1洗淨管21及第2洗淨管26的全長為例如比以加工裝置1所加工之晶圓的直徑略長，在晶圓的直徑為300mm時，可為例如380mm。 The second cleaning means 25 is disposed in the vicinity of the first cleaning means 20. The second cleaning means 25 is provided with a second direction which is parallel to the upper surface 7 of the processing table 6, and which extends in a direction intersecting with the processing feed direction of the processing table 6 formed by the processing feed means 8. The cleaning pipe 26 has a plurality of second injection ports 27 formed along the extending direction of the second cleaning pipe 26, and a second communication pipe 28 that communicates with the second injection port 27 and the air supply source 30 through the second valve 29. By opening the second valve 29, air can be ejected from the second injection port 27 through the second communication pipe 28. The total length of the first cleaning tube 21 and the second cleaning tube 26 in the extending direction is, for example, slightly longer than the diameter of the wafer processed by the processing apparatus 1, and may be, for example, 380 mm when the diameter of the wafer is 300 mm. .
第1洗淨手段20具備有調整由第1噴射口22朝向 晶圓所噴射之空氣的噴射方向的角度的第1角度調整機構。 第1角度調整機構具備有例如，將第1洗淨管21支撐為可在內周側旋轉的導管21a、貫通導管21a之側面而使第1噴射口22突出的窗部21b，以及固定第1洗淨管21和導管21a之圖未示的螺絲。要調整第1噴射口22的角度時，是在導管21a內以手動方式轉動第1洗淨管21以使第1噴射口22朝向所期望的方向，再以螺絲固定第1洗淨管21。 The first cleaning means 20 is provided with an adjustment by the first injection port 22 A first angle adjustment mechanism that is an angle of an injection direction of air ejected by the wafer. The first angle adjustment mechanism includes, for example, a duct 21a that supports the first cleaning tube 21 so as to be rotatable on the inner circumference side, a window portion 21b that penetrates the side surface of the duct 21a, and the first injection port 22 protrudes, and the first portion is fixed. The screws of the cleaning tube 21 and the catheter 21a are not shown. When the angle of the first injection port 22 is to be adjusted, the first cleaning pipe 21 is manually rotated in the duct 21a so that the first injection port 22 faces the desired direction, and the first cleaning pipe 21 is screwed.
又，關於第2洗淨手段25，其也具備有調整由第2 噴射口27朝向加工台6的上表面7噴射之空氣的噴射方向的角度的第2角度調整機構。第2角度調整機構也具備有例如，將第2洗淨管26支撐為可在內周側旋轉的導管26a、貫通導 管26a之側面而使第2噴射口27突出的窗部26b，以及固定第2洗淨管26和導管26a之圖未示的螺絲。要調整第2噴射口27的角度時，是在導管26a內以手動方式轉動第2洗淨管26以使第2噴射口27朝向所期望的方向，再以螺絲固定第2洗淨管26。 Further, the second cleaning means 25 is also provided with adjustment by the second A second angle adjusting mechanism that ejects an angle of the air in the ejection direction of the air jetted toward the upper surface 7 of the processing table 6. The second angle adjustment mechanism also includes, for example, a guide 26a that supports the second cleaning tube 26 so as to be rotatable on the inner circumference side, and a through guide. The window portion 26b in which the second injection port 27 protrudes from the side surface of the tube 26a, and the screw (not shown) for fixing the second cleaning tube 26 and the catheter 26a. When the angle of the second injection port 27 is to be adjusted, the second cleaning pipe 26 is manually rotated in the duct 26a so that the second injection port 27 faces the desired direction, and the second cleaning pipe 26 is screwed.
其次，說明使用加工裝置1加工晶圓W的方法。 晶圓W是被加工物之一例，且為未特別限定材質等的被加工物。晶圓W是將以搬入手段10之保持部100所保持之面形成為上表面Wa，並將其相反側之面形成為被第1洗淨手段20洗淨的下表面Wb。 Next, a method of processing the wafer W using the processing apparatus 1 will be described. The wafer W is an example of a workpiece, and is a workpiece that is not particularly limited in material. The wafer W is a lower surface Wb in which the surface held by the holding portion 100 of the loading device 10 is formed as the upper surface Wa, and the surface on the opposite side is formed to be washed by the first cleaning means 20.
如圖2所示，在直到以搬入手段10將晶圓W搬入到加工台6並使加工台6保持晶圓W為止的期間，以第1洗淨手段20將加工前之晶圓W的下表面Wb洗淨。具體來說，是藉由昇降機構12使保持加工前之晶圓W的保持部100，朝接近加工台6的方向(-Z方向)僅下降預定的距離。接著以搬送機構11使保持部100和移動部111一起往-X方向移動並使其通過第1洗淨手段20的上方。再者，以搬送機構11所形成之晶圓W的進給速度宜設定為例如250mm/sec。 As shown in FIG. 2, until the wafer W is carried into the processing table 6 by the loading means 10 and the wafer W is held by the processing table 6, the wafer W before processing is processed by the first cleaning means 20. The surface Wb is washed. Specifically, the elevating mechanism 12 lowers the holding portion 100 of the wafer W before the processing by a predetermined distance in the direction (-Z direction) close to the processing table 6. Next, the transport unit 11 moves the holding unit 100 and the moving unit 111 together in the −X direction and passes the upper side of the first cleaning means 20 . Further, the feed speed of the wafer W formed by the transport mechanism 11 is preferably set to, for example, 250 mm/sec.
此時，第1洗淨手段20會打開第1閥24以通過第1連通管23來連通空氣供給源30和第1噴射口22。在使保持晶圓W的保持部100往-X方向移動時，第1洗淨手段20會由第1噴射口22噴射空氣以對晶圓W之整個下表面Wb吹送空氣。並且，藉由空氣的壓力將附著在晶圓W之下表面Wb上的廢 屑除去。此廢屑為例如因為之前的步驟中的晶圓W之加工而產生的加工屑等。再者，由第1噴射口22所噴射之空氣的流量是設成例如100L/min。 At this time, the first cleaning means 20 opens the first valve 24 to communicate the air supply source 30 and the first injection port 22 through the first communication pipe 23. When the holding portion 100 holding the wafer W is moved in the -X direction, the first cleaning means 20 ejects air from the first ejection opening 22 to blow air to the entire lower surface Wb of the wafer W. And, the waste attached to the lower surface Wb of the wafer W by the pressure of the air Remove the chips. This waste is, for example, machining chips or the like which are generated due to the processing of the wafer W in the previous step. Further, the flow rate of the air injected by the first injection port 22 is set to, for example, 100 L/min.
此處，在實施晶圓洗淨步驟時，是藉由例如以昇 降機構12調整保持部100的高度，來調整保持部100所保持之晶圓W之下表面Wb和第1噴射口22之間的距離。又，較理想的是，因應晶圓W之下表面Wb和第1噴射口22之間的距離，而使用上述之第1角度調整機構先將第1噴射口22的朝向調整為對晶圓W之下表面Wb最適宜的角度。第1噴射口22是藉由比+Z方向更倒向+X側，而以相對於晶圓W之-X方向的移動朝斜向方向噴射空氣，藉此可以有效地除去附著在晶圓W的下表面Wb之廢屑。 Here, when performing the wafer cleaning step, for example, by liter The lowering mechanism 12 adjusts the height of the holding portion 100 to adjust the distance between the lower surface Wb of the wafer W and the first ejection opening 22 held by the holding portion 100. Further, it is preferable that the orientation of the first injection port 22 is first adjusted to the wafer W by using the first angle adjustment mechanism described above in response to the distance between the lower surface Wb of the wafer W and the first injection port 22. The optimum angle of the surface Wb below. The first ejection opening 22 is ejected toward the +X side more than the +Z direction, and is ejected in the oblique direction with respect to the movement of the wafer W in the -X direction, whereby the adhesion to the wafer W can be effectively removed. The waste of the lower surface Wb.
在加工台6保持以搬入手段10所搬入之晶圓W之前，以第2洗淨手段25洗淨加工台6的上表面7。具體來說，如圖2所示，是以加工進給手段8使加工台6例如朝-X方向移動，並使其通過第2洗淨手段25的下方。加工台6的進給速度是設定為例如1000mm/sec。此加工台洗淨步驟也可以和晶圓洗淨步驟同時進行。 The upper surface 7 of the processing table 6 is cleaned by the second cleaning means 25 before the processing table 6 holds the wafer W carried by the loading means 10. Specifically, as shown in FIG. 2, the processing table 8 moves the processing table 6 in the -X direction, for example, and passes it below the second cleaning means 25. The feed speed of the processing table 6 is set to, for example, 1000 mm/sec. This processing station cleaning step can also be performed simultaneously with the wafer cleaning step.
此時，第2洗淨手段25會打開第2閥29以通過第2 連通管28來連通空氣供給源30和第2噴射口27。在使加工台6往-X方向移動時，第2洗淨手段25會由第2噴射口27噴射空氣以對加工台6之整個上表面7吹送空氣。如此地進行以藉由所噴射之空氣的壓力將附著在加工台6之上表面7的廢 屑除去。此廢屑是因為例如在加工裝置1中以加工台6所保持而之前已被加工過之晶圓的加工所產生的加工屑等。再者，由第1噴射口22所噴射之空氣的流量是設成例如100L/min。作為由第2噴射口22所噴射之空氣的流量，宜以例如100L/min來進行。 At this time, the second cleaning means 25 opens the second valve 29 to pass the second The communication pipe 28 communicates with the air supply source 30 and the second injection port 27. When the processing table 6 is moved in the -X direction, the second cleaning means 25 injects air from the second ejection opening 27 to blow air to the entire upper surface 7 of the processing table 6. This is done to waste the surface 7 attached to the upper surface of the processing table 6 by the pressure of the injected air. Remove the chips. This waste is due to, for example, machining chips generated by the processing of the wafer which has been previously processed by the processing table 6 in the processing apparatus 1. Further, the flow rate of the air injected by the first injection port 22 is set to, for example, 100 L/min. The flow rate of the air injected by the second injection port 22 is preferably, for example, 100 L/min.
較理想的是，在加工台洗淨步驟中，一邊作動工 作台旋轉機構16，並以中心軸15為中心使加工台65例如朝箭頭A方向旋轉，一邊洗淨加工台6的上表面7。藉此，可以將上表面7無遺漏地全部洗淨，並且可以利用以加工台6之旋轉所產生的離心力來提升洗淨效果。再者，工作台旋轉機構16，除了使加工台6往一個方向旋轉外，也可以用反覆正轉逆轉的方式使加工台6旋轉。 Ideally, during the washing step of the processing station, one side starts. The table rotating mechanism 16 rotates the processing table 65 around the center axis 15 in the direction of the arrow A, for example, and washes the upper surface 7 of the processing table 6. Thereby, the upper surface 7 can be completely cleaned without any omission, and the centrifugal force generated by the rotation of the processing table 6 can be utilized to enhance the washing effect. Further, in addition to rotating the processing table 6 in one direction, the table rotating mechanism 16 may rotate the processing table 6 by reverse rotation.
又，較理想的是，在實施加工台洗淨步驟時，使 加工台6之上表面和第2噴射口27之間的距離形成所期望的距離，例如設置使加工台6於上下方向上昇降的昇降機構來調整加工台6的高度亦可。較理想的是，因應加工台6之上表面和第2噴射口27之間的距離，而使用上述之第2角度調整機構先將第2噴射口27的朝向調整為對加工台6之上表面7最適宜的角度。第2噴射口27是藉由比-Z方向更倒向+X側，而以相對於加工台6之-X方向的移動朝斜向方向噴射空氣，藉此可以有效地除去附著在上表面7之廢屑。 Moreover, it is preferable that when the processing stage washing step is performed, The distance between the upper surface of the processing table 6 and the second ejection opening 27 is a desired distance. For example, an elevation mechanism for raising and lowering the processing table 6 in the vertical direction may be provided to adjust the height of the processing table 6. Preferably, the orientation of the second injection port 27 is first adjusted to the upper surface of the processing table 6 by the second angle adjustment mechanism described above in response to the distance between the upper surface of the processing table 6 and the second injection port 27. 7 the most suitable angle. The second injection port 27 is sprayed toward the +X side more than the -Z direction, and is ejected in the oblique direction with respect to the movement in the -X direction of the processing table 6, whereby the adhesion to the upper surface 7 can be effectively removed. Scraps.
實施晶圓洗淨步驟和加工台洗淨步驟之後，使加工台6及保持晶圓W的搬入手段10移動至例如二點鏈線所示之位 置，並將晶圓W載置於加工台6上。其次，以圖未示之吸引源將晶圓W吸引保持在加工台6之上表面7之後，藉由圖1所示之加工手段9進行預定之雷射加工。具體來說，是藉由加工進給手段8使保持晶圓W的加工台6移動到加工手段9的下方。加工手段9是藉由例如沿著晶圓W的切割道照射對晶圓W具有穿透性之波長的雷射光線而在晶圓W的內部形成改質層。之後，藉由例如破斷裝置而以改質層為起點分割晶圓W。又，利用加工手段9沿著晶圓W的切割道照射對晶圓W具有吸收性之波長的雷射光線以將晶圓W全切(full cut)來進行分割亦可。 After performing the wafer cleaning step and the processing table cleaning step, the processing table 6 and the loading means 10 for holding the wafer W are moved to, for example, the position indicated by the two-dot chain line. The wafer W is placed on the processing table 6. Next, after the wafer W is attracted and held on the upper surface 7 of the processing table 6 by a suction source not shown, predetermined laser processing is performed by the processing means 9 shown in FIG. Specifically, the processing table 6 holding the wafer W is moved to the lower side of the processing means 9 by the processing feed means 8. The processing means 9 forms a modified layer inside the wafer W by, for example, irradiating a laser beam having a wavelength that is transparent to the wafer W along a scribe line of the wafer W. Thereafter, the wafer W is divided by using the modified layer as a starting point by, for example, a breaking device. Further, the processing means 9 may irradiate the laser beam having a wavelength that is absorptive to the wafer W along the scribe line of the wafer W to divide the wafer W into a full cut.
像這樣，由於加工裝置1具備有在直到搬入手段 10將晶圓W搬入到加工台6為止的期間，對搬入手段10所保持之晶圓W的下表面Wb噴射空氣以進行洗淨的第1洗淨手段20，和在以加工台6保持藉由搬入手段10所搬入之晶圓W之前，對加工台6之上表面7噴射空氣以進行洗淨的第2洗淨手段25，因此可以在直到藉由搬入手段10將晶圓W載置到加工台6上之前，對晶圓W的下表面Wb及加工台6的上表面7噴射空氣以進行洗淨，並且可以防止在加工台6和晶圓W之間夾入廢屑之情形。 In this way, since the processing device 1 is provided with the means of loading until When the wafer W is carried into the processing table 6, the first cleaning means 20 that ejects air to the lower surface Wb of the wafer W held by the loading means 10 to be cleaned, and is held by the processing table 6 The second cleaning means 25 that ejects air to the upper surface 7 of the processing table 6 to be cleaned before the wafer W carried in by the loading means 10 is placed on the wafer W until the loading means 10 is placed thereon. Before the processing table 6, the air is ejected to the lower surface Wb of the wafer W and the upper surface 7 of the processing table 6 to be cleaned, and the occurrence of debris between the processing table 6 and the wafer W can be prevented.
圖3所示之加工裝置1a具備有在直到搬入手段10將晶圓搬入到加工台6為止之期間，對晶圓W的下表面Wb吹送空氣以洗淨下表面Wb，並且對加工台6的上表面7吹送空氣以洗淨上表面7的洗淨手段40。加工裝置1a，除了具備洗淨 手段40這一點以外，是形成為和加工裝置1同樣的構成，因此對同樣地被構成的構成部分會附加相同的符號，並省略其說明。 The processing apparatus 1a shown in FIG. 3 is provided with the air blown to the lower surface Wb of the wafer W to wash the lower surface Wb, and to the processing table 6, until the loading means 10 carries the wafer into the processing table 6. The upper surface 7 blows air to wash the cleaning means 40 of the upper surface 7. Processing device 1a, except for cleaning Other than the means 40, the same components as those of the processing apparatus 1 are formed. Therefore, the same components are denoted by the same reference numerals, and the description thereof will be omitted.
洗淨手段40具備有具有已將上述第1洗淨管21和 上述第2洗淨管26做成一體化之構造且在與搬送機構11及加工進給手段8所形成之移動方向(X軸方向)為交叉的方向上延伸的洗淨管41、沿著洗淨管41之延伸方向形成並朝向搬入手段10所保持之晶圓W的下表面Wb噴射空氣之複數個第1噴射口42、沿著洗淨管41之延伸方向形成並朝向加工台6的上表面7噴射空氣之複數個第2噴射口43，以及透過閥45使第1噴射口42及第2噴射口43和空氣供給源30連通的連通管44。洗淨管41的延伸方向中的全長為例如比以加工裝置1a所加工之晶圓的直徑略長，在晶圓的直徑為300mm時，可為例如380mm。藉由使洗淨管41旋轉，可以使第1噴射口41及第2噴射口42旋轉以調整空氣之噴射方向的角度。此時，是將調整由第1噴射口41朝向晶圓噴射之空氣的噴射方向的角度的第1角度調整機構，和調整由第2噴射口42朝向加工台6噴射之空氣的噴射方向的角度的第2角度調整機構形成共通的構成。又，例如將洗淨管41做成雙重構造等而使第1噴射口41和第2噴射口構成為各自獨立來旋轉，而做成可以個別地調整來自第1噴射口41之空氣的噴射角度和來自第2噴射口之空氣的噴射角度亦可。針對空氣的流量調整，在圖3之例中，雖然是形成為以閥45來調整由第1噴射口41所噴射之空氣的量和由第2噴射口42所噴射之空氣的量之 構成，但是也可以做成對第1噴射口41和第2噴射口42各自連接不同的閥，並個別地調整空氣的流量。 The cleaning means 40 is provided with the first cleaning tube 21 and The second cleaning pipe 26 has a structure in which the second cleaning pipe 26 is integrated, and the cleaning pipe 41 extends in a direction intersecting with the moving direction (X-axis direction) formed by the conveying mechanism 11 and the machining feeding device 8 A plurality of first injection ports 42 that are formed in the extending direction of the clean pipe 41 and that are ejected toward the lower surface Wb of the wafer W held by the loading device 10 are formed along the extending direction of the cleaning pipe 41 and face the processing table 6. The plurality of second injection ports 43 that inject air on the surface 7 and the communication pipe 44 that communicates the first injection port 42 and the second injection port 43 with the air supply source 30 through the valve 45. The total length in the extending direction of the cleaning tube 41 is, for example, slightly longer than the diameter of the wafer processed by the processing apparatus 1a, and may be, for example, 380 mm when the diameter of the wafer is 300 mm. By rotating the cleaning tube 41, the first injection port 41 and the second injection port 42 can be rotated to adjust the angle of the air injection direction. In this case, the first angle adjustment mechanism that adjusts the angle of the air jetted from the first injection port 41 toward the wafer, and the angle of the spray direction of the air that is ejected toward the processing table 6 by the second injection port 42 are adjusted. The second angle adjustment mechanism forms a common configuration. In addition, for example, the cleaning pipe 41 has a double structure and the first injection port 41 and the second injection port are configured to rotate independently, and the injection angle of the air from the first injection port 41 can be individually adjusted. The injection angle of the air from the second injection port may also be. In the example of FIG. 3, the flow rate adjustment of the air is adjusted such that the amount of air injected by the first injection port 41 and the amount of air injected by the second injection port 42 are adjusted by the valve 45. However, the valve may be connected to each of the first injection port 41 and the second injection port 42 and the flow rate of the air may be individually adjusted.
其次，說明使用加工裝置1a加工晶圓W的方法。 針對在加工裝置1a上，同時實施晶圓洗淨步驟和加工台洗淨步驟的情形進行說明。 Next, a method of processing the wafer W using the processing apparatus 1a will be described. A case where the wafer cleaning step and the processing table cleaning step are simultaneously performed on the processing apparatus 1a will be described.
如圖5所示，以搬入手段10將晶圓W搬入加工台6， 並在直到加工台6保持晶圓W為止的期間，以洗淨手段40洗淨加工前之晶圓W的下表面Wb，並且洗淨加工台6的上表面7。具體來說，是藉由昇降機構12，使保持晶圓W的保持部100，朝接近加工台6的方向(-Z方向)僅下降預定的距離，並且藉由搬送機構11，使保持部100往-X方向移動並使其通過洗淨手段40的上方側。又，以加工進給手段8，使加工台6朝例如-X方向移動並使其通過洗淨手段40的下方側。 As shown in FIG. 5, the wafer W is carried into the processing table 6 by the loading means 10. While the processing table 6 holds the wafer W, the lower surface Wb of the wafer W before the processing is washed by the cleaning means 40, and the upper surface 7 of the processing table 6 is cleaned. Specifically, the holding unit 100 holding the wafer W is lowered by a predetermined distance in the direction (−Z direction) close to the processing table 6 by the elevating mechanism 12, and the holding unit 100 is moved by the conveying mechanism 11. Move in the -X direction and pass it through the upper side of the washing means 40. Further, the processing feed means 8 moves the processing table 6 in the -X direction, for example, and passes the lower side of the cleaning means 40.
此時，洗淨手段40是藉由打開閥45，以通過連通 管44來連通空氣供給源30和第1噴射口42。接著，一邊使保持晶圓W的保持部100及加工台6朝-X方向移動，一邊洗淨手段40會由第1噴射口42噴射空氣以對晶圓W的整個下表面Wb吹送空氣，並且由第2噴射口43噴射空氣以對加工台6的等個上表面7吹送空氣。如此進行，以藉由從各噴射口所噴射之空氣的壓力將附著在晶圓W的下表面Wb及加工台6的上表面7的廢屑除去。再者，由第1噴射口42及第2噴射口43所噴射之空氣的流量是設成例如100L/min。 At this time, the cleaning means 40 is opened by opening the valve 45. The tube 44 communicates with the air supply source 30 and the first injection port 42. Then, while the holding portion 100 holding the wafer W and the processing table 6 are moved in the -X direction, the cleaning means 40 ejects air from the first ejection opening 42 to blow air to the entire lower surface Wb of the wafer W, and Air is injected from the second injection port 43 to blow air to the equal upper surfaces 7 of the processing table 6. In this manner, the waste adhered to the lower surface Wb of the wafer W and the upper surface 7 of the processing table 6 is removed by the pressure of the air ejected from the respective ejection openings. Further, the flow rate of the air injected by the first injection port 42 and the second injection port 43 is set to, for example, 100 L/min.
已實施晶圓洗淨步驟和加工台洗淨步驟之後，與 上述之加工裝置1同樣地實施加工步驟。亦即，使加工台6 及保持晶圓W的搬入手段10移動至例如二點鏈線所示之位置，將晶圓W搬入至加工台6並以加工台6保持後，以圖3所示之加工手段9對晶圓W進行預定之雷射加工。 After the wafer cleaning step and the processing table cleaning step have been performed, The processing apparatus 1 described above performs the processing steps in the same manner. That is, the processing table 6 And the loading means 10 for holding the wafer W is moved to a position indicated by, for example, a two-dot chain line, and the wafer W is carried into the processing table 6 and held by the processing table 6, and the wafer is processed by the processing means 9 shown in FIG. W performs predetermined laser processing.
圖6所示之加工裝置1b具備有在直到搬入手段10將晶圓搬入到加工台6為止的期間，對晶圓W的下表面Wb吹送空氣以洗淨下表面Wb，並且對加工台6的上表面7吹送空氣以洗淨上表面7的洗淨手段70。加工裝置1b，除了洗淨手段70之構成以外，是和加工裝置1a同樣地被構成，因此對同樣地被構成的構成部分會附加相同的符號，並省略其說明。 The processing apparatus 1b shown in FIG. 6 is provided with the air blown to the lower surface Wb of the wafer W to wash the lower surface Wb, and the processing table 6 is carried out until the loading means 10 carries the wafer into the processing table 6. The upper surface 7 blows air to wash the cleaning means 70 of the upper surface 7. The processing apparatus 1b is configured similarly to the processing apparatus 1a except for the configuration of the cleaning apparatus 70. Therefore, the same components are denoted by the same reference numerals, and the description thereof will be omitted.
洗淨手段70具備有具有已將上述加工裝置1中的第1洗淨管21和第2洗淨管26做成一體化之構造且在與搬送機構11及加工進給手段8所形成之移動方向(X軸方向)為交叉的方向上延伸的洗淨管71、沿著洗淨管71之延伸方向形成並朝向搬入手段10所保持之晶圓W的下表面Wb噴射空氣之複數個第1噴射口72、沿著洗淨管71之延伸方向形成並朝向加工台6的上表面7噴射空氣之複數個第2噴射口73，以及透過閥45使第1噴射口72及第2噴射口73和空氣供給源30連通的連通管44。第1噴射口72和第2噴射口73是以洗淨管71的中心為基準朝向相反方向形成開口。洗淨管71的延伸方向中的全長為例如比以加工裝置1b所加工之晶圓的直徑略長，在晶圓的直徑為300mm時，可為例如380mm。 The cleaning means 70 includes a structure in which the first cleaning tube 21 and the second cleaning tube 26 in the processing apparatus 1 are integrated, and the movement formed by the conveying mechanism 11 and the processing feeding means 8 is formed. The direction (X-axis direction) is a cleaning tube 71 extending in the intersecting direction, and a plurality of first air jets formed along the extending direction of the cleaning tube 71 and ejecting air toward the lower surface Wb of the wafer W held by the loading means 10. The injection port 72, a plurality of second injection ports 73 formed along the extending direction of the cleaning pipe 71 and jetting air toward the upper surface 7 of the processing table 6, and the first injection port 72 and the second injection port 73 through the transmission valve 45. A communication pipe 44 that communicates with the air supply source 30. The first injection port 72 and the second injection port 73 form openings in the opposite directions with respect to the center of the cleaning pipe 71. The total length in the extending direction of the cleaning tube 71 is, for example, slightly longer than the diameter of the wafer processed by the processing apparatus 1b, and may be, for example, 380 mm when the diameter of the wafer is 300 mm.
如圖6所示，在直到搬入手段10將晶圓W搬入到 加工台6並使加工台6保持晶圓W為止的期間，會以洗淨手段70洗淨加工前之晶圓W的下表面Wb，並且洗淨加工台6的上表面7。具體來說，是藉由昇降機構12，使保持晶圓W的保持部100，朝接近加工台6的方向(-Z方向)僅下降預定的距離，並且藉由搬送機構11，使保持部100往+X方向移動並使其通過洗淨手段40的上方側。又，以加工進給手段8，使加工台6朝例如-X方向移動並使其通過洗淨手段40的下方側。 As shown in FIG. 6, the wafer W is carried up until the loading means 10 While the processing table 6 holds the wafer W until the processing table 6 is held, the lower surface Wb of the wafer W before the processing is washed by the cleaning means 70, and the upper surface 7 of the processing table 6 is cleaned. Specifically, the holding unit 100 holding the wafer W is lowered by a predetermined distance in the direction (−Z direction) close to the processing table 6 by the elevating mechanism 12, and the holding unit 100 is moved by the conveying mechanism 11. Move in the +X direction and pass it through the upper side of the washing means 40. Further, the processing feed means 8 moves the processing table 6 in the -X direction, for example, and passes the lower side of the cleaning means 40.
第1噴射口72會朝向晶圓W之下表面Wb，第2噴 射口73會朝向加工台6之上表面7，且藉由搬送機構11使保持部100朝X方向移動，並藉由加工進給手段8而使加工台6朝-X方向移動。並且，洗淨手段70會打開閥45，由第1噴射口72朝向晶圓W的下表面Wb噴射空氣，並且由第2噴射口73朝向加工台6的上表面7噴射空氣。如此進行，搬入手段10就可以因應加工台6的移動方向，而朝向晶圓W的下表面Wb及加工台6的上表面7噴射空氣以進行洗淨。 The first ejection opening 72 faces the lower surface Wb of the wafer W, and the second ejection The injection port 73 faces the upper surface 7 of the processing table 6, and the holding portion 100 is moved in the X direction by the conveying mechanism 11, and the processing table 6 is moved in the -X direction by the machining feeding means 8. Further, the cleaning means 70 opens the valve 45, ejects air toward the lower surface Wb of the wafer W from the first ejection opening 72, and ejects air toward the upper surface 7 of the processing table 6 by the second ejection opening 73. In this manner, the loading unit 10 can eject the air toward the lower surface Wb of the wafer W and the upper surface 7 of the processing table 6 in accordance with the moving direction of the processing table 6 to perform cleaning.
像這樣，因為加工裝置1b具備有洗淨手段70，且該洗淨手段70具有已將第1洗淨管21和第2洗淨管26做成一體的構造之洗淨管71，因此可以在不將裝置大型化的情形下，在直到將晶圓W載置到加工台6上之前，有效率地將晶圓W的下表面Wb和加工台6的上表面7洗淨。 In this way, the processing apparatus 1b includes the cleaning means 70, and the cleaning means 70 has the cleaning tube 71 having the structure in which the first cleaning tube 21 and the second cleaning tube 26 are integrated. When the apparatus is not enlarged, the lower surface Wb of the wafer W and the upper surface 7 of the processing table 6 are efficiently washed until the wafer W is placed on the processing table 6.
圖7所示之加工裝置1c具備有調整由第1洗淨管21之第1噴射口22所噴射之空氣的流量的第1流量調整手段50、進 行高度調整以使第1噴射口22和晶圓W的下表面Wb形成預定之距離的第1高度調整手段60、調整由第2洗淨管26之第2噴射口27所噴射之空氣的流量的第2流量調整手段53，以及調整第2噴射口27和加工台6a的上表面7之距離的第2高度調整手段63。再者，對和上述之加工裝置1同樣地被構成的部分會附加相同的符號，並省略其說明。 The processing device 1c shown in FIG. 7 includes a first flow rate adjusting means 50 for adjusting the flow rate of the air injected by the first injection port 22 of the first cleaning pipe 21, and The row height is adjusted so that the first height adjusting means 60 that forms the predetermined distance between the first injection port 22 and the lower surface Wb of the wafer W and the flow rate of the air injected by the second injection port 27 of the second cleaning pipe 26 are adjusted. The second flow rate adjusting means 53 and the second height adjusting means 63 for adjusting the distance between the second injection port 27 and the upper surface 7 of the processing table 6a. In the same manner as the processing device 1 described above, the same reference numerals will be given to the same components, and the description thereof will be omitted.
第1流量調整手段50是由配置於第1連通管23上 之第1流量調整閥51，和調整第1流量調整閥51中的空氣流量的第1控制部52所構成。第1控制部52至少具備有CPU及記憶體，且可以根據設定在第1控制部52上之控制資訊控制第1流量調整閥51以調整使其從第1噴射口22噴射之空氣的流量。又，第2流量調整手段53是由配置於第2連通管28上之第2流量調整閥54，和對第2流量調整閥54調整空氣流量的第2控制部55所構成。關於第2控制部55，其至少具備有CPU及記憶體，且可以根據設定在第2控制部55上之控制資訊控制第2流量調整閥54以調整使其從第2噴射口27噴射之空氣的流量。 The first flow rate adjustment means 50 is disposed on the first communication pipe 23 The first flow rate adjustment valve 51 and the first control unit 52 that adjusts the air flow rate in the first flow rate adjustment valve 51 are configured. The first control unit 52 includes at least a CPU and a memory, and can control the first flow rate adjustment valve 51 to adjust the flow rate of the air injected from the first injection port 22 based on the control information set in the first control unit 52. Further, the second flow rate adjusting means 53 is constituted by the second flow rate adjusting valve 54 disposed on the second communication pipe 28 and the second control portion 55 for adjusting the air flow rate to the second flow rate adjusting valve 54. The second control unit 55 includes at least a CPU and a memory, and can control the second flow rate adjustment valve 54 to adjust the air to be ejected from the second injection port 27 based on the control information set on the second control unit 55. Traffic.
第1高度調整手段60具備有支撐第1洗淨管21並 調整其高度位置的調整部61，和將調整部61支撐成可昇降的支撐柱62。藉由使調整部61沿著支撐柱62昇降移動，可以調整第1洗淨管21的高度，並將第1噴射口22和晶圓W的下表面Wb之間的距離調整為所期望的距離。另一方面，第2高度調整手段63具備有支撐第2洗淨管26並調整其高度位置的調整部64，和將調整部64支撐成可昇降的支撐柱65。 藉由使調整部64沿著支撐柱65昇降移動，可以調整第2洗淨管26的高度，並將第2噴射口27和加工台6的上表面7之間的距離調整為所期望的距離。 The first height adjusting means 60 is provided to support the first cleaning pipe 21 and The adjustment portion 61 whose height position is adjusted, and the support portion 62 that supports the adjustment portion 61 to be movable up and down. By moving the adjustment portion 61 up and down along the support column 62, the height of the first cleaning tube 21 can be adjusted, and the distance between the first injection port 22 and the lower surface Wb of the wafer W can be adjusted to a desired distance. . On the other hand, the second height adjusting means 63 includes an adjusting portion 64 that supports the second cleaning pipe 26 and adjusts the height position thereof, and a support post 65 that supports the adjusting portion 64 so as to be movable up and down. By moving the adjustment portion 64 up and down along the support column 65, the height of the second cleaning pipe 26 can be adjusted, and the distance between the second injection port 27 and the upper surface 7 of the processing table 6 can be adjusted to a desired distance. .
其次，說明使用加工裝置1c加工晶圓W的方法。 在加工裝置1c上，可以藉由與加工裝置1同樣的動作，實施晶圓洗淨步驟、加工台洗淨步驟及加工步驟。再者，在第1控制部52及2控制部55上，可因應要加工之晶圓的種類(例如，晶圓的材質等)、第1噴射口22和晶圓W的下表面Wb之間的距離及第2噴射口27和加工台6的上表面7之間的距離等，事先設定必要的空氣的流量。 Next, a method of processing the wafer W using the processing apparatus 1c will be described. In the processing apparatus 1c, the wafer cleaning step, the processing stage cleaning step, and the processing step can be performed by the same operation as the processing apparatus 1. Further, in the first control unit 52 and the control unit 55, the type of the wafer to be processed (for example, the material of the wafer), the first ejection opening 22, and the lower surface Wb of the wafer W may be used. The distance between the second injection port 27 and the upper surface 7 of the processing table 6 is set in advance, and the required flow rate of air is set in advance.
在晶圓洗淨步驟中，第1流量調整手段50會根據 設定在第1控制部52上的控制資訊，由第1洗淨手段20a之第1噴射口22朝向晶圓W的下表面Wb噴射預定流量的空氣。 又，第1流量調整手段50會因應第1噴射口22和晶圓W的下表面Wb之間的距離，控制第1流量調整閥51以增減空氣的流量。另一方面，第1高度調整手段60會因應由第1噴射口22所噴射之空氣的流量，而使調整部61沿著支撐柱62朝+Z方向上昇以使第1洗淨管21朝晶圓W的下表面Wb接近，或使調整部61沿著支撐柱62朝-Z方向下降以使第1洗淨管21遠離晶圓W的下表面Wb，而將第1噴射口22和晶圓W的下表面Wb之間的距離調整成所期望的距離。 In the wafer cleaning step, the first flow rate adjusting means 50 is based on The control information set in the first control unit 52 is caused to eject a predetermined flow rate of air from the first injection port 22 of the first cleaning means 20a toward the lower surface Wb of the wafer W. Further, the first flow rate adjusting means 50 controls the first flow rate adjusting valve 51 to increase or decrease the flow rate of the air in accordance with the distance between the first injection port 22 and the lower surface Wb of the wafer W. On the other hand, the first height adjustment means 60 raises the adjustment portion 61 in the +Z direction along the support column 62 in response to the flow rate of the air ejected by the first injection port 22 so that the first cleaning tube 21 faces the crystal. The lower surface Wb of the circle W approaches, or the adjustment portion 61 is lowered in the -Z direction along the support post 62 to move the first cleaning tube 21 away from the lower surface Wb of the wafer W, and the first ejection opening 22 and the wafer The distance between the lower surfaces Wb of W is adjusted to a desired distance.
在加工台洗淨步驟中，第2流量調整手段53會根據設定在第2控制部55上的控制資訊，由第2洗淨手段25a之第2噴射口27朝向加工台6的上表面7噴射預定流量的空氣。 又，第2流量調整手段53會因應第2噴射口27和加工台6的上表面7之間的距離，控制第2流量調整閥54以增減空氣的流量。另一方面，第2高度調整手段63會因應第2噴射口27所噴射之空氣的流量，而使調整部64沿著支撐柱65朝+Z方向上昇以使第2洗淨管26遠離加工台6的上表面7，或使調整部64沿著支撐柱65朝-Z方向下降以使第2洗淨管26朝加工台6的上表面7接近，而將第2噴射口27和加工台6的上表面7之間的距離調整成所期望的距離。 In the processing table cleaning step, the second flow rate adjusting means 53 is ejected toward the upper surface 7 of the processing table 6 by the second ejection port 27 of the second cleaning means 25a based on the control information set in the second control unit 55. Predetermined flow of air. Further, the second flow rate adjusting means 53 controls the second flow rate adjusting valve 54 to increase or decrease the flow rate of the air in accordance with the distance between the second injection port 27 and the upper surface 7 of the processing table 6. On the other hand, the second height adjusting means 63 raises the adjustment portion 64 in the +Z direction along the support post 65 in response to the flow rate of the air ejected by the second injection port 27 to move the second cleaning pipe 26 away from the processing table. The upper surface 7 of 6 or the adjustment portion 64 is lowered in the -Z direction along the support column 65 so that the second cleaning tube 26 approaches the upper surface 7 of the processing table 6, and the second ejection port 27 and the processing table 6 are moved. The distance between the upper surfaces 7 is adjusted to the desired distance.
已實施過晶圓洗淨步驟和加工台洗淨步驟之後， 實施和加工裝置1同樣的加工步驟。亦即，在已將晶圓W搬入加工台6並以加工台6保持之後，藉由加工手段9對晶圓W進行預定之雷射加工。 After the wafer cleaning step and the processing station cleaning step have been performed, The same processing steps as the processing apparatus 1 are carried out. That is, after the wafer W has been carried into the processing table 6 and held by the processing table 6, the wafer W is subjected to predetermined laser processing by the processing means 9.
像這樣，因為加工裝置1c具備有調整由第1噴射 口22所噴射之空氣的流量的第1流量調整手段50、進行高度調整以使第1噴射口22和晶圓W的下表面Wb形成預定之距離的第1高度調整手段60、調整由第2噴射口27所噴射之空氣的流量的第2流量調整手段53，以及調整第2噴射口27和加工台6a的上表面7之距離的第2高度調整手段63，因此可以配合由第1噴射口22、第2噴射口27所噴射的空氣的流量，來調整第1洗淨管21，第2洗淨管26的高度。又，也可以因應第1洗淨管21、第2洗淨管26的高度來調節由第1噴射口22、第2噴射口27所噴射之空氣的流量。據此，可以更有效地對晶圓W的下表面Wb及加工台6的上表面7進行藉由空氣形成的洗淨。 In this way, the processing device 1c is provided with the adjustment by the first injection. The first flow rate adjusting means 50 for adjusting the flow rate of the air injected by the port 22, and the first height adjusting means 60 for adjusting the height so that the first injection port 22 and the lower surface Wb of the wafer W form a predetermined distance are adjusted by the second The second flow rate adjusting means 53 for the flow rate of the air injected by the injection port 27, and the second height adjusting means 63 for adjusting the distance between the second injection port 27 and the upper surface 7 of the processing table 6a, can be matched with the first injection port 22. The flow rate of the air injected by the second injection port 27 adjusts the height of the first cleaning pipe 21 and the second cleaning pipe 26. In addition, the flow rate of the air injected by the first injection port 22 and the second injection port 27 may be adjusted in accordance with the heights of the first cleaning pipe 21 and the second cleaning pipe 26. Thereby, the lower surface Wb of the wafer W and the upper surface 7 of the processing table 6 can be more effectively washed by air.
圖8所示之加工裝置2具有裝置基座2a，且在裝置基座2a的前部配置有可收容複數片晶圓W的晶圓盒3。裝置基座2a的之上表面具備有暫時放置晶圓W之暫置區域4、對晶圓盒3將加工前之晶圓W搬出並將加工後之晶圓W搬入的搬出入部5、具有保持晶圓W之上表面7的加工台6a、使加工台6a在X軸方向上走行的加工進給手段8a、對保持在加工台6a的上表面7之晶圓W施行雷射加工的加工手段9a、保持晶圓W以由暫置區域4將晶圓W搬入加工台6a的搬入手段10a、進行已藉由加工手段9a加工過之晶圓W的洗淨的洗淨區域13、將晶圓由加工台6a搬送至洗淨區域13的搬送手段14、在直到搬入手段10a將晶圓W由暫置區域4搬入到加工台6a為止的期間對晶圓W之下表面Wb吹送空氣以洗淨下表面Wb的第1洗淨手段20b，以及對加工台6a的上表面7吹送空氣以洗淨上表面7的第2洗淨手段25b。 The processing apparatus 2 shown in FIG. 8 has a device base 2a, and a wafer cassette 3 that can accommodate a plurality of wafers W is disposed in front of the apparatus base 2a. The upper surface of the apparatus base 2a is provided with a temporary storage area 4 in which the wafer W is temporarily placed, and the loading/unloading unit 5 for carrying out the wafer W before processing of the wafer cassette 3 and carrying the processed wafer W, and having the holding The processing table 6a of the upper surface 7 of the wafer W, the processing feeding means 8a for moving the processing table 6a in the X-axis direction, and the processing means for performing laser processing on the wafer W held on the upper surface 7 of the processing table 6a 9a. The loading means 10a for holding the wafer W to carry the wafer W into the processing table 6a by the temporary region 4, the cleaning region 13 for cleaning the wafer W processed by the processing means 9a, and the wafer The conveyance means 14 conveyed to the cleaning area 13 by the processing table 6a, and the air is blown to the lower surface Wb of the wafer W until the loading means 10a carries the wafer W from the temporary area 4 to the processing stage 6a. The first cleaning means 20b of the lower surface Wb and the second cleaning means 25b for blowing the air to the upper surface 7 of the processing table 6a to wash the upper surface 7.
搬入手段10a具備有保持晶圓W的保持部100、可在與加工台6a的上表面7平行的方向上旋繞的臂部102，以及連接在臂部102之一端的軸部103。搬入手段10a是藉由使軸部103昇降，而可以使保持部100朝相對於加工台6a的上表面7接近及離開的方向昇降。又，藉由使軸部103旋轉，可以使保持部100在暫置區域4和加工台6a之間水平地移動。 The loading device 10a includes a holding portion 100 that holds the wafer W, an arm portion 102 that can be wound in a direction parallel to the upper surface 7 of the processing table 6a, and a shaft portion 103 that is connected to one end of the arm portion 102. The loading means 10a can raise and lower the holding portion 100 in a direction approaching and moving away from the upper surface 7 of the processing table 6a by raising and lowering the shaft portion 103. Further, by rotating the shaft portion 103, the holding portion 100 can be horizontally moved between the temporary region 4 and the processing table 6a.
第1洗淨手段20b，是在晶圓盒3和暫置區域4之間於X軸方向上延伸而配置。第1洗淨手段20b是形成為與上述 之第1洗淨手段20同樣的構成。又，第1洗淨手段20b的配置位置，並不限定於圖8所示的位置，只要配置於搬入手段10a之保持部100的移動路徑的下方即可。第2洗淨手段25b，是在加工台6b之移動路徑的上方於Y軸方向上延伸而配置。第2洗淨手段25b是形成為與上述之第2洗淨手段25同樣的構成。 The first cleaning means 20b is disposed to extend in the X-axis direction between the wafer cassette 3 and the temporary storage area 4. The first cleaning means 20b is formed to be as described above The first cleaning means 20 has the same configuration. In addition, the arrangement position of the first cleaning means 20b is not limited to the position shown in FIG. 8, and may be disposed below the movement path of the holding unit 100 of the loading means 10a. The second cleaning means 25b is disposed to extend in the Y-axis direction above the movement path of the processing table 6b. The second cleaning means 25b is formed in the same configuration as the second cleaning means 25 described above.
其次，說明使用加工裝置2加工晶圓W的方法。 首先，搬出入部5會從晶圓盒3中將加工前的晶圓W朝-Y方向拉出而暫時放置在暫置區域4中。搬出入手段10a會以保持部100將暫時放置於暫置區域4的晶圓W保持並且搬出。 Next, a method of processing the wafer W using the processing device 2 will be described. First, the loading/unloading portion 5 pulls the wafer W before processing from the wafer cassette 3 in the -Y direction and temporarily places it in the temporary region 4. The loading/unloading means 10a holds and carries out the wafer W temporarily placed in the temporary area 4 by the holding unit 100.
接著，藉由使軸部103旋轉以使臂部102旋繞，並 藉由使保持晶圓W的保持部100由暫置區域4移動至加工台6a的上方側，以在使保持部100通過第1洗淨手段20b之上方側時，實施晶圓洗淨步驟。如圖9所示，第1洗淨手段20b會打開第1閥24而使空氣供給源30和第1噴射口22連通。一邊使保持晶圓W的保持部100旋轉移動，一邊第1洗淨手段20b會由第1噴射口22噴射空氣以對晶圓W之整個下表面Wb吹送空氣，並藉由空氣的壓力除去附著在晶圓W之下表面Wb的廢屑。 Next, the arm portion 103 is rotated to rotate the arm portion 102, and The wafer cleaning step is performed by moving the holding portion 100 holding the wafer W from the temporary region 4 to the upper side of the processing table 6a so that the holding portion 100 passes the upper side of the first cleaning means 20b. As shown in FIG. 9, the first cleaning means 20b opens the first valve 24 and connects the air supply source 30 and the first injection port 22. While the holding portion 100 holding the wafer W is rotationally moved, the first cleaning means 20b ejects air from the first ejection opening 22 to blow air to the entire lower surface Wb of the wafer W, and is removed by the pressure of the air. Scrap on the surface Wb below the wafer W.
又，如圖10所示，在加工台6a保持以搬入手段10a 所搬入的晶圓W之前，會實施加工台洗淨步驟。具體來說，是以加工進給手段8a，使加工台6a朝例如-X方向移動，並使其通過第2洗淨手段25b的下方。此時，第2洗淨手段25b會打開第2閥29以通過第2連通管28來連通空氣供給源30和 第2噴射口27。在使加工台6a朝-X方向移動時，第2洗淨手段25b會由第2噴射口27噴射空氣以對加工台6之整個上表面7吹送空氣，並藉由空氣的壓力除去附著在加工台6的上表面7的廢屑。加工台洗淨步驟也可以和晶圓洗淨步驟同時進行，也可以在晶圓洗淨步驟之前進行。 Moreover, as shown in FIG. 10, the processing means 6a is held by the loading means 10a. The processing table cleaning step is performed before the wafer W that is carried in. Specifically, the processing feed means 8a moves the processing table 6a in the -X direction, for example, and passes it below the second cleaning means 25b. At this time, the second cleaning means 25b opens the second valve 29 to communicate with the air supply source 30 through the second communication pipe 28. The second injection port 27. When the processing table 6a is moved in the -X direction, the second cleaning means 25b ejects air from the second ejection opening 27 to blow air to the entire upper surface 7 of the processing table 6, and is removed by the pressure of the air. Scrap from the upper surface 7 of the table 6. The processing stage cleaning step may also be performed simultaneously with the wafer cleaning step or before the wafer cleaning step.
實施晶圓洗淨步驟和加工台洗淨步驟之後，可實 施加工步驟。具體來說，是使加工台6a移動到例如二點鏈線所示之位置，再將搬入手段10a移動至加工台6a之上方側，並在加工台6a上載置洗淨後之晶圓W而保持了晶圓W之後，以圖8所示的加工手段9a對晶圓W進行預定之雷射加工。像這樣，即使在加工裝置2中，還是可以在直到將晶圓W載置到加工台6a上之前，有效率地將晶圓W的下表面Wb及加工台6a的上表面7洗淨。 After performing the wafer cleaning step and the processing table cleaning step, Processing steps. Specifically, the processing table 6a is moved to a position indicated by, for example, a two-dot chain line, and the loading means 10a is moved to the upper side of the processing table 6a, and the cleaned wafer W is placed on the processing table 6a. After the wafer W is held, the wafer W is subjected to predetermined laser processing by the processing means 9a shown in FIG. As described above, even in the processing apparatus 2, the lower surface Wb of the wafer W and the upper surface 7 of the processing table 6a can be efficiently washed until the wafer W is placed on the processing table 6a.
再者，在上述實施形態中，雖然說明了適用於對 第1洗淨手段20、20a及20b和第2洗淨手段25、25a及25b進行雷射加工的加工裝置1、1a、1b、2之例，但是並不限定於此構成，也可適用於例如切削裝置。 Furthermore, in the above embodiment, although it is described that it is applied to The first cleaning means 20, 20a, and 20b and the second cleaning means 25, 25a, and 25b are examples of processing apparatuses 1, 1a, 1b, and 2 for performing laser processing. However, the present invention is not limited to this configuration, and is also applicable to For example, a cutting device.
1‧‧‧加工裝置 1‧‧‧Processing device
10‧‧‧搬入手段 10‧‧‧Relocation means
100‧‧‧保持部 100‧‧‧ Keeping Department
101‧‧‧保持面 101‧‧‧ Keep face
11‧‧‧搬送機構 11‧‧‧Transportation agency
110‧‧‧導軌 110‧‧‧rails
111‧‧‧移動部 111‧‧‧Mobile Department
12‧‧‧昇降機構 12‧‧‧ Lifting mechanism
120‧‧‧支撐部 120‧‧‧Support
15‧‧‧中心軸 15‧‧‧ center axis
16‧‧‧工作台旋轉機構 16‧‧‧Worktable rotation mechanism
20‧‧‧第1洗淨手段 20‧‧‧1st cleaning method
21‧‧‧第1洗淨管 21‧‧‧1st cleaning tube
21a、26a‧‧‧導管 21a, 26a‧‧‧ catheter
21b、26b‧‧‧窗部 21b, 26b‧‧‧ Window Department
22‧‧‧第1噴射口 22‧‧‧1st injection port
23‧‧‧第1連通管 23‧‧‧1st connecting pipe
24‧‧‧第1閥 24‧‧‧1st valve
25‧‧‧第2洗淨手段 25‧‧‧2nd cleaning means
26‧‧‧第2洗淨管 26‧‧‧2nd cleaning tube
27‧‧‧第2噴射口 27‧‧‧2nd injection port
28‧‧‧第2連通管 28‧‧‧2nd connecting pipe
29‧‧‧第2閥 29‧‧‧2nd valve
30‧‧‧空氣供給源 30‧‧‧Air supply source
6‧‧‧加工台 6‧‧‧Processing table
7‧‧‧加工台的上表面 7‧‧‧ Upper surface of the processing table
8‧‧‧加工進給手段 8‧‧‧Processing means of feeding
9‧‧‧加工手段 9‧‧‧Processing means
W‧‧‧晶圓 W‧‧‧ wafer
Wa‧‧‧晶圓的上表面 Wa‧‧‧ wafer upper surface
Wb‧‧‧晶圓的下表面 The lower surface of the Wb‧‧ wafer
+X、-X、+Z、-Z‧‧‧方向 +X, -X, +Z, -Z‧‧‧ directions
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