TW201521090A - Epitaxial silicon wafer and method for manufacturing epitaxial silicon wafer - Google Patents
Epitaxial silicon wafer and method for manufacturing epitaxial silicon wafer Download PDFInfo
- Publication number
- TW201521090A TW201521090A TW103134821A TW103134821A TW201521090A TW 201521090 A TW201521090 A TW 201521090A TW 103134821 A TW103134821 A TW 103134821A TW 103134821 A TW103134821 A TW 103134821A TW 201521090 A TW201521090 A TW 201521090A
- Authority
- TW
- Taiwan
- Prior art keywords
- epitaxial
- wafer
- epitaxial film
- oxygen concentration
- temperature
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
本發明是有關於一種磊晶矽晶圓及磊晶矽晶圓的製造方法。 The invention relates to a method for manufacturing an epitaxial germanium wafer and an epitaxial germanium wafer.
先前，已知有如下磊晶晶圓，其是在切出單晶矽而獲得的矽晶圓的表面使磊晶膜氣相成長而成。 Heretofore, an epitaxial wafer having a vapor phase growth of an epitaxial film on the surface of a germanium wafer obtained by cutting a single crystal germanium has been known.
在磊晶膜中的氧濃度較低的情況下，例如存在如下情況：在裝置製程等的熱處理中在磊晶膜中發生位錯，該位錯會延展。因此，業界正進行用以防止此種位錯的延展的研究(例如參照文獻1：日本專利特開2010-141272號公報)。 In the case where the oxygen concentration in the epitaxial film is low, for example, there is a case where dislocations occur in the epitaxial film in the heat treatment of the device process or the like, and the dislocations are extended. Therefore, the industry is conducting research to prevent the spread of such dislocations (for example, refer to Japanese Laid-Open Patent Publication No. 2010-141272).
文獻1中記載有如下情況：發現磊晶膜表面的氧濃度與位錯有關聯，藉由將該磊晶膜表面的氧濃度設定為1.0×1017atoms/cm3~12×1017atoms/cm3(ASTM F-121,1979)，可防止位錯的延展。並且，作為具有此種特性的磊晶晶圓的製造方法，記載有：在磊晶膜的形成步驟後，進行在非氧化性環境或氧化性環境中進行處理的氧濃度設定熱處理步驟。 Document 1 describes that the oxygen concentration on the surface of the epitaxial film is found to be related to dislocations, and the oxygen concentration on the surface of the epitaxial film is set to 1.0 × 10 17 atoms / cm 3 to 12 × 10 17 atoms / Cm 3 (ASTM F-121, 1979) prevents the extension of dislocations. Further, as a method of producing an epitaxial wafer having such characteristics, an oxygen concentration setting heat treatment step of performing treatment in a non-oxidizing atmosphere or an oxidizing atmosphere after the step of forming the epitaxial film is described.
藉由在非氧化性環境中進行氧濃度設定熱處理步驟，固 溶於矽晶圓中的氧擴散至磊晶膜，使磊晶膜的氧濃度上升。 By setting the oxygen concentration setting heat treatment step in a non-oxidizing environment, solid The oxygen dissolved in the germanium wafer diffuses to the epitaxial film, causing the oxygen concentration of the epitaxial film to rise.
另外，藉由在氧化性環境中進行氧濃度設定熱處理步驟，在磊晶膜的表面會形成氧化膜，該氧化膜的氧向內擴散至磊晶膜，並且矽晶圓的氧擴散至磊晶膜，使磊晶膜的氧濃度上升。 In addition, by performing an oxygen concentration setting heat treatment step in an oxidizing atmosphere, an oxide film is formed on the surface of the epitaxial film, the oxygen of the oxide film is diffused inward to the epitaxial film, and the oxygen of the germanium wafer is diffused to the epitaxial layer. The film increases the oxygen concentration of the epitaxial film.
然而，在文獻1中所記載的製造方法中，氧濃度設定熱處理步驟是利用與磊晶膜的形成步驟中所使用的製造裝置不同的裝置、例如立式爐或單片爐而進行，因而製造設備增多。另外，在磊晶膜的形成步驟與氧濃度設定熱處理步驟之間，需要在設備間搬送磊晶矽晶圓，導致製造效率降低。因此，存在磊晶矽晶圓的製造成本增加的問題。 However, in the manufacturing method described in Document 1, the oxygen concentration setting heat treatment step is performed by using a device different from the manufacturing apparatus used in the step of forming the epitaxial film, for example, a vertical furnace or a monolithic furnace, and thus is manufactured. Increased equipment. Further, between the formation of the epitaxial film and the oxygen concentration setting heat treatment step, it is necessary to transport the epitaxial wafer between the devices, resulting in a decrease in manufacturing efficiency. Therefore, there is a problem that the manufacturing cost of the epitaxial wafer is increased.
本發明的目的在於提供一種在不導致製造成本增加的情況下能夠抑制位錯的延展的磊晶矽晶圓、及磊晶矽晶圓的製造方法。 An object of the present invention is to provide an epitaxial germanium wafer capable of suppressing the spread of dislocations and a method of manufacturing an epitaxial germanium wafer without causing an increase in manufacturing cost.
本發明者反覆進行努力研究，著眼於如下情況：藉由在將磊晶矽晶圓的溫度自磊晶膜的成長時的溫度降低的降溫步驟中，控制降溫速度，而有可控制自矽晶圓向磊晶膜的擴散量、即可控制磊晶膜的氧濃度的可能性。因此，本發明者進行了如下實驗。 The present inventors have made an effort to study in detail, focusing on the case where the temperature drop rate is controlled by a temperature lowering step in which the temperature of the epitaxial wafer is lowered from the temperature at which the epitaxial film grows, and the self-twisting is controlled. The amount of diffusion into the epitaxial film can control the oxygen concentration of the epitaxial film. Therefore, the inventors conducted the following experiment.
<實驗1> <Experiment 1>
藉由丘克拉斯基法(CZ法，Czochralski method)而製造氧濃度不同的多個單晶錠，自各單晶錠切出矽晶圓。將矽晶圓的氧濃度(以下，有時稱為「基板氧濃度」)示於表1。 A plurality of single crystal ingots having different oxygen concentrations are produced by the Czochralski method, and the tantalum wafer is cut out from each of the single crystal ingots. The oxygen concentration of the germanium wafer (hereinafter sometimes referred to as "substrate oxygen concentration") is shown in Table 1.
以矽晶圓的(100)面作為鏡面研磨面，在該鏡面研磨面成長膜厚(以下，存在稱為「磊晶膜厚」的情況)為3μm的磊晶膜。磊晶膜的成長是在三氯矽烷等氣體環境中在1150℃左右的溫度下進行。然後，藉由以表1所示的降溫速度(以下，有時稱為「磊晶處理的降溫速度」)進行磊晶膜的成長後的降溫步驟，將磊晶矽晶圓冷卻至室溫，並測定磊晶膜的氧濃度。氧濃度的測定是利用二次離子質譜儀(SIMS，Secondary Ion Mass Spectrometry)而進行。將自磊晶膜表面(與矽晶圓相反的側的面)起的深度尺寸為0.5μm~1.0μm的範圍內的平均氧濃度(以下，有時稱為「表層氧濃度」)示於表1。 The (100) plane of the ruthenium wafer was used as a mirror-polished surface, and an epitaxial film having a thickness of 3 μm was formed on the mirror-polished surface (hereinafter, there is a case where "the thickness of the epitaxial film" is present). The growth of the epitaxial film is carried out at a temperature of about 1150 ° C in a gas atmosphere such as trichloromethane. Then, the epitaxial wafer is cooled to room temperature by performing a temperature decreasing step after the growth of the epitaxial film at a temperature decreasing rate shown in Table 1 (hereinafter, referred to as "deceleration rate of epitaxial processing"). And measuring the oxygen concentration of the epitaxial film. The measurement of the oxygen concentration was carried out by a secondary ion mass spectrometer (SIMS, Secondary Ion Mass Spectrometry). The average oxygen concentration (hereinafter, referred to as "surface oxygen concentration") in the range of 0.5 μm to 1.0 μm from the surface of the epitaxial film (the side opposite to the tantalum wafer) is shown in the table. 1.
進而，對上述製程所製作的磊晶矽晶圓進行應力負載試驗。 Further, a stress load test was performed on the epitaxial wafer fabricated by the above process.
首先，自磊晶矽晶圓切出長度3cm、寬度1.5cm的測定用樣品。其次，對測定用樣品的表面(磊晶膜的表面)，利用微維氏硬度計施加2g的荷重並保持10秒鐘，而導入壓痕。然後，在支點間距離2cm、試驗溫度800℃的條件下對測定用樣品實施三點彎曲試驗。此時，施加2N的荷重，使拉伸應力作用於測定用樣品的表面側。 First, a sample for measurement having a length of 3 cm and a width of 1.5 cm was cut out from the epitaxial wafer. Next, the surface of the sample for measurement (the surface of the epitaxial film) was applied with a load of 2 g by a micro Vickers hardness tester for 10 seconds to introduce an indentation. Then, the measurement sample was subjected to a three-point bending test under the conditions of a distance between the fulcrums of 2 cm and a test temperature of 800 °C. At this time, a load of 2 N was applied to cause tensile stress to act on the surface side of the sample for measurement.
其後，對冷卻至室溫的測定用樣品，實施2μm的光蝕(light etching)，使用光學顯微鏡測定有無由導入至磊晶膜的壓痕所產生的在磊晶膜表面觀察到的位錯坑。將測定結果示於表1。 Thereafter, the sample for measurement cooled to room temperature was subjected to light etching of 2 μm, and the presence or absence of dislocation observed on the surface of the epitaxial film by the indentation introduced into the epitaxial film was measured using an optical microscope. pit. The measurement results are shown in Table 1.
如表1所示，得知若基板氧濃度為固定，則磊晶處理的降溫速度越小、即越緩慢地進行冷卻，磊晶矽晶圓的表層氧濃度越增高。 As shown in Table 1, when the substrate oxygen concentration was fixed, the lower the temperature drop rate of the epitaxial treatment, that is, the slower the cooling, the higher the surface oxygen concentration of the epitaxial wafer.
另外，如表1所示，得知若磊晶矽晶圓的表層氧濃度為2.5×1016atoms/cm3(ASTM F-121,1979)以上，則無位錯的延展(無位錯坑)。 Further, as shown in Table 1, it is found that if the surface layer oxygen concentration of the epitaxial wafer is 2.5 × 10 16 atoms/cm 3 (ASTM F-121, 1979) or more, no dislocation is extended (no dislocation pit) ).
進而，對在無位錯延展的條件下製作的磊晶矽晶圓，進行模擬半導體裝置的製造製程的熱處理。具體而言，依序進行在1000℃下1小時、在900℃下1小時、在800℃下2小時、在650℃下3小時的4階段熱處理。另外，各熱處理的環境設為氮氣與 氧氣的混合氣體環境(氧濃度3%)。然後，對經熱處理的磊晶矽晶圓進行上述應力負載試驗。 Further, a heat treatment for simulating the manufacturing process of the semiconductor device is performed on the epitaxial wafer fabricated under the condition of no dislocation extension. Specifically, a four-stage heat treatment at 1000 ° C for 1 hour, at 900 ° C for 1 hour, at 800 ° C for 2 hours, and at 650 ° C for 3 hours was sequentially performed. In addition, the environment of each heat treatment is set to nitrogen and A mixed gas atmosphere of oxygen (oxygen concentration 3%). Then, the above-described stress load test was performed on the heat-treated epitaxial wafer.
得知關於在上述條件下進行過熱處理的磊晶矽晶圓，無位錯的延展。 It was found that the epitaxial germanium wafer subjected to the heat treatment under the above conditions has no dislocation extension.
得知在本實驗1中，為了消除位錯的延展，只要自磊晶膜表面起的深度尺寸為0.5μm~1.0μm的位置的氧濃度為2.5×1016atoms/cm3以上即可。另一方面，文獻1中記載有如下情況：為了消除位錯的延展，而將自磊晶膜表面起的深度尺寸為80nm~200nm(0.08μm~0.2μm)的位置的氧濃度設定為1.0×1017atoms/cm3~12×1017atoms/cm3。此處，關於磊晶膜的氧濃度，通常矽晶圓側較高，磊晶膜的表面側降低，因而在文獻1的構成中，認為與本實驗1相同的深度位置的氧濃度為1.0×1017atoms/cm3~12×1017atoms/cm3以上。 In the experiment 1, in order to eliminate the dislocation extension, the oxygen concentration at a position having a depth of 0.5 μm to 1.0 μm from the surface of the epitaxial film may be 2.5 × 10 16 atoms/cm 3 or more. On the other hand, in Document 1, it is described that the oxygen concentration at a position having a depth of 80 nm to 200 nm (0.08 μm to 0.2 μm) from the surface of the epitaxial film is set to 1.0 × in order to eliminate the extension of dislocations. 10 17 atoms/cm 3 ~ 12 × 10 17 atoms/cm 3 . Here, the oxygen concentration of the epitaxial film is generally higher on the wafer side and lower on the surface side of the epitaxial film. Therefore, in the configuration of Document 1, it is considered that the oxygen concentration at the same depth position as in Experiment 1 is 1.0 × 10 17 atoms/cm 3 to 12 × 10 17 atoms/cm 3 or more.
由以上情況得知，即便使磊晶膜的氧濃度低於文獻1的構成，亦可消除位錯的延展。 From the above, it is known that even if the oxygen concentration of the epitaxial film is lower than that of the literature 1, the extension of dislocations can be eliminated.
本發明是基於如上所述的見解而完成。 The present invention has been completed based on the findings as described above.
即，本發明的磊晶矽晶圓是在矽晶圓的表面設置有磊晶膜的磊晶矽晶圓，其特徵在於：上述磊晶膜中的除該磊晶膜的表面以外的位置的氧濃度為2.5×1016atoms/cm3(ASTM F-121,1979)以上且小於1.0×1017atoms/cm3。 That is, the epitaxial germanium wafer of the present invention is an epitaxial germanium wafer provided with an epitaxial film on the surface of the germanium wafer, and is characterized by a position other than the surface of the epitaxial film in the epitaxial film. The oxygen concentration is 2.5 × 10 16 atoms/cm 3 (ASTM F-121, 1979) or more and less than 1.0 × 10 17 atoms/cm 3 .
另外，本發明的磊晶矽晶圓的製造方法是在矽晶圓的表面設置有磊晶膜的磊晶矽晶圓的製造方法，其特徵在於包括如下步驟：磊晶膜成長步驟，其在上述矽晶圓的表面使上述磊晶膜成長；及降溫步驟，其將上述磊晶矽晶圓的溫度自使上述磊晶膜成 長時的溫度降低；並且，上述降溫步驟中，以使上述磊晶膜中的除該磊晶膜的表面以外的位置的氧濃度成為2.5×1016atoms/cm3(ASTM F-121,1979)以上的方式控制上述磊晶矽晶圓的降溫速度。 In addition, the method for fabricating an epitaxial germanium wafer of the present invention is a method for fabricating an epitaxial germanium wafer having an epitaxial film on a surface of a germanium wafer, comprising the steps of: an epitaxial film growth step, wherein The surface of the germanium wafer is grown by the epitaxial film; and the temperature decreasing step is performed to lower the temperature of the epitaxial wafer from the temperature at which the epitaxial film is grown; and in the step of lowering the temperature, The temperature drop rate of the epitaxial germanium wafer was controlled so that the oxygen concentration at a position other than the surface of the epitaxial film in the crystal film was 2.5 × 10 16 atoms/cm 3 (ASTM F-121, 1979) or more.
根據本發明的磊晶矽晶圓的製造方法，藉由在降溫步驟中控制降溫速度，可充分地提高磊晶膜表層部的氧濃度，而可製造能夠抑制位錯的延展的磊晶矽晶圓。另外，由於無需設置磊晶膜的形成步驟以外的步驟，故而不會導致製造效率的降低及製造設備的增加。因此，不會導致製造成本增加。 According to the method for fabricating an epitaxial germanium wafer of the present invention, by controlling the temperature drop rate in the temperature decreasing step, the oxygen concentration in the surface layer portion of the epitaxial film can be sufficiently increased, and epitaxial twin crystals capable of suppressing dislocations can be produced. circle. Further, since it is not necessary to provide a step other than the step of forming the epitaxial film, the manufacturing efficiency is not lowered and the manufacturing equipment is increased. Therefore, it does not lead to an increase in manufacturing costs.
另外，根據本發明的磊晶矽晶圓，藉由確保除磊晶膜的表面以外的位置的氧濃度為至少2.5×1016atoms/cm3以上，在製程中的熱處理過程中可充分地抑制位錯的延展，即便小於1.0×1017atoms/cm3，亦可充分地抑制位錯的延展。此外，雖然越提高氧濃度，越可增大位錯延展的抑制效果，但會導致製造成本的上升而不實用。本發明的磊晶晶圓可提供如上所述在不會導致製造成本增加的情況下能夠抑制位錯的延展的磊晶矽晶圓。 Further, the epitaxial germanium wafer according to the present invention can be sufficiently suppressed in the heat treatment process in the process by ensuring that the oxygen concentration at a position other than the surface of the epitaxial film is at least 2.5 × 10 16 atoms/cm 3 or more. The extension of dislocations can sufficiently suppress the extension of dislocations even if it is less than 1.0 × 10 17 atoms/cm 3 . Further, although the oxygen concentration is increased, the effect of suppressing the dislocation stretching is increased, but the manufacturing cost is increased and it is not practical. The epitaxial wafer of the present invention can provide an epitaxial germanium wafer capable of suppressing the extension of dislocations without causing an increase in manufacturing cost as described above.
此外，本發明中所謂「磊晶矽晶圓的溫度」，包括磊晶矽晶圓的實際溫度與使磊晶膜成長時收容矽晶圓的構件(例如磊晶裝置的反應容器)內的溫度兩者的含義。 Further, in the present invention, the "temperature of the epitaxial wafer" includes the actual temperature of the epitaxial wafer and the temperature of the member (for example, the reaction container of the epitaxial device) that accommodates the wafer when the epitaxial film is grown. The meaning of both.
本發明的磊晶矽晶圓中，上述矽晶圓的氧濃度較佳為10×1017atoms/cm3以上且18×1017atoms/cm3(ASTM F-121,1979)以下。 In the epitaxial wafer of the present invention, the silicon germanium wafer preferably has an oxygen concentration of 10 × 10 17 atoms / cm 3 or more and 18 × 10 17 atoms / cm 3 (ASTM F-121, 1979) or less.
此處，確認即便氧自矽晶圓擴散至磊晶膜，在擴散前後基板氧濃度(矽晶圓的氧濃度)亦幾乎不變化。 Here, it was confirmed that even if oxygen diffuses from the germanium wafer to the epitaxial film, the substrate oxygen concentration (the oxygen concentration of the germanium wafer) hardly changes before and after the diffusion.
根據本發明的磊晶矽晶圓，藉由使用將基板氧濃度設定 為上述範圍的矽晶圓，而可藉由僅控制磊晶成長處理的降溫速度的簡單方法，使不發生位錯的延展的量的氧擴散至磊晶膜。 According to the epitaxial germanium wafer of the present invention, the substrate oxygen concentration is set by using In the case of the tantalum wafer of the above range, an amount of oxygen which does not cause dislocations is diffused to the epitaxial film by a simple method of controlling only the temperature drop rate of the epitaxial growth process.
另外，本發明者基於上述實驗1的結果，進行了以下的實驗2、實驗3。 Further, the inventors conducted the following Experiment 2 and Experiment 3 based on the results of Experiment 1 described above.
<實驗2> <Experiment 2>
將磊晶膜厚設為2μm，將基板氧濃度及磊晶處理的降溫速度設為以下的表2的條件，除此以外，在與實驗1相同的條件下進行磊晶矽晶圓的製作及應力負載試驗，測定在磊晶膜表面所觀察到的位錯坑。將測定結果示於表2。 The epitaxial film thickness was set to 2 μm, and the substrate oxygen concentration and the epitaxial cooling rate were set to the following conditions in Table 2, except that the epitaxial wafer was fabricated under the same conditions as in Experiment 1. Stress load test to determine the dislocation pit observed on the surface of the epitaxial film. The measurement results are shown in Table 2.
<實驗3> <Experiment 3>
將磊晶膜厚設為4μm，將基板氧濃度及磊晶處理的降溫速度設為以下的表3的條件，除此以外，在與實驗1相同的條件下進行磊晶矽晶圓的製作及應力負載試驗，測定在磊晶膜表面所 觀察到的位錯坑。將測定結果示於表3。 The epitaxial film thickness was set to 4 μm, and the substrate oxygen concentration and the epitaxial cooling rate were set to the following conditions in Table 3, except that the epitaxial wafer was fabricated under the same conditions as in Experiment 1. Stress load test, measured on the surface of the epitaxial film Observed dislocation pits. The measurement results are shown in Table 3.
如表1~表3所示，得知無論磊晶膜厚如何，只要基板氧濃度為固定，則磊晶處理的降溫速度越小、即越緩慢地進行冷卻，越消除位錯的延展。 As shown in Tables 1 to 3, it is found that as long as the epitaxial film thickness is fixed, the lower the temperature drop rate of the epitaxial treatment, the slower the cooling, and the more the dislocation extension is eliminated.
另外，表2、表3中雖然未揭示，但無位錯延展的磊晶矽晶圓的表層氧濃度為2.5×1016atoms/cm3以上。另一方面，有位錯延展的磊晶矽晶圓的表層氧濃度小於2.5×1016atoms/cm3。 Further, although not disclosed in Tables 2 and 3, the epitaxial germanium wafer having no dislocation extension has a surface layer oxygen concentration of 2.5 × 10 16 atoms/cm 3 or more. On the other hand, the epitaxial germanium wafer having dislocation extension has a surface oxygen concentration of less than 2.5 × 10 16 atoms/cm 3 .
進而，對實驗2、實驗3中的在無位錯延展的條件下製 作的磊晶矽晶圓，與實驗1同樣地進行模擬半導體裝置的製造製程的熱處理與應力負載試驗。其結果為，得知在任一條件下進行過熱處理的磊晶矽晶圓均無位錯的延展。 Further, in Experiment 2, Experiment 3, under the condition of no dislocation extension In the same manner as in Experiment 1, the epitaxial wafer was subjected to a heat treatment and a stress load test for simulating the manufacturing process of the semiconductor device. As a result, it was found that the epitaxial germanium wafer subjected to the heat treatment under any of the conditions had no dislocation extension.
因此，基於該結果，研究是否可對每一磊晶膜厚算出適當的降溫速度。將磊晶膜厚為3μm、2μm、4μm的情況下的基板氧濃度與降溫速度的關係分別示於圖1、圖2、圖3。 Therefore, based on the results, it was investigated whether an appropriate temperature drop rate can be calculated for each epitaxial film thickness. The relationship between the substrate oxygen concentration and the temperature drop rate in the case where the epitaxial film thickness is 3 μm, 2 μm, or 4 μm is shown in Fig. 1, Fig. 2, and Fig. 3, respectively.
如圖1~圖3所示，無位錯延展的條件的近似曲線成為如虛線所表示的曲線。圖1~圖3所示的所有近似曲線可將磊晶膜厚設為X(μm)，將基板氧濃度設為Y(×1017atoms/cm3(ASTM F-121,1979))，將降溫速度設為Z(℃/min)，而以下述式(1)表示。 As shown in FIGS. 1 to 3, the approximate curve of the condition without dislocation extension becomes a curve as indicated by a broken line. All the approximate curves shown in FIGS. 1 to 3 can set the epitaxial film thickness to X (μm) and the substrate oxygen concentration to Y (×10 17 atoms/cm 3 (ASTM F-121, 1979)). The cooling rate is set to Z (° C/min) and is expressed by the following formula (1).
Z=3.55×X-6.47×Y5.15 (1) Z=3.55×X -6.47 ×Y 5.15 (1)
由此得知，藉由將降溫速度設為上述式(1)中所得的Z的值以下，可製造無位錯延展的磊晶矽晶圓。 From this, it is understood that by setting the temperature drop rate to be equal to or less than the value of Z obtained in the above formula (1), it is possible to manufacture a dislocation-free epitaxial germanium wafer.
即，本發明的磊晶矽晶圓的製造方法中，上述降溫步驟較佳為以將上述磊晶膜的膜厚設為X(μm)，將上述矽晶圓的氧濃度設為Y(×1017atoms/cm3(ASTM F-121,1979))，將上述降溫速度設為Z(℃/min)時滿足以下的式(2)的方式進行。 That is, in the method for producing an epitaxial germanium wafer of the present invention, it is preferable that the temperature decreasing step is such that the thickness of the epitaxial film is X (μm), and the oxygen concentration of the germanium wafer is Y (x). 10 17 atoms/cm 3 (ASTM F-121, 1979)), when the temperature drop rate is Z (° C/min), the following formula (2) is satisfied.
Z≦3.55×X-6.47×Y5.15 (2) Z≦3.55×X -6.47 ×Y 5.15 (2)
根據本發明的磊晶矽晶圓的製造方法，藉由於上述式(2)中代入磊晶膜的膜厚與矽晶圓的氧濃度而算出降溫速度的簡單方法，可製造在不導致製造成本增加的情況下能夠抑制位錯的延展的磊晶矽晶圓。 According to the method for producing an epitaxial germanium wafer of the present invention, a simple method for calculating a temperature drop rate by substituting the film thickness of the epitaxial film and the oxygen concentration of the germanium wafer in the above formula (2) can be manufactured without causing manufacturing cost. An extended epitaxial wafer capable of suppressing dislocations in an increased case.
1‧‧‧磊晶矽晶圓 1‧‧‧Emission wafer
2‧‧‧矽晶圓 2‧‧‧矽 wafer
3‧‧‧磊晶膜 3‧‧‧Elevation film
21‧‧‧矽晶圓的表面 21‧‧‧矽 Wafer surface
31‧‧‧磊晶膜的表面 31‧‧‧ Surface of the epitaxial film
D‧‧‧深度尺寸 D‧‧‧Deep size
S1-S4‧‧‧步驟 S1-S4‧‧‧ steps
T‧‧‧膜厚 T‧‧‧ film thickness
圖1是為了導出規定本發明中的降溫速度的式而實施的實驗1的結果，是表示磊晶膜厚為3μm的情況下的基板氧濃度與降溫速度的關係的圖表。 FIG. 1 is a graph showing the relationship between the substrate oxygen concentration and the temperature drop rate in the case where the epitaxial film thickness is 3 μm, as a result of the experiment 1 performed to derive the formula for specifying the temperature drop rate in the present invention.
圖2是為了導出規定上述降溫速度的式而實施的實驗2的結果，是表示磊晶膜厚為2μm的情況下的基板氧濃度與降溫速度的關係的圖表。 FIG. 2 is a graph showing the relationship between the substrate oxygen concentration and the temperature drop rate in the case where the epitaxial film thickness is 2 μm, as a result of Experiment 2 performed to derive the formula for specifying the above-described temperature drop rate.
圖3是為了導出規定上述降溫速度的式而實施的實驗3的結果，是表示磊晶膜厚為4μm的情況下的基板氧濃度與降溫速度的關係的圖表。 3 is a graph showing the relationship between the substrate oxygen concentration and the temperature drop rate in the case where the epitaxial film thickness is 4 μm, as a result of Experiment 3 performed to derive the formula for specifying the above-described temperature drop rate.
圖4是表示本發明的一實施方式的磊晶矽晶圓的製造方法的流程圖。 4 is a flow chart showing a method of manufacturing an epitaxial germanium wafer according to an embodiment of the present invention.
圖5是表示上述一實施方式的磊晶矽晶圓的剖面圖。 Fig. 5 is a cross-sectional view showing an epitaxial wafer of the above embodiment.
[實施方式] [Embodiment]
以下，參照圖式對本發明的實施方式進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
圖4是表示磊晶矽晶圓的製造方法的流程圖。圖5是表示磊晶矽晶圓的剖面圖。 4 is a flow chart showing a method of manufacturing an epitaxial germanium wafer. Fig. 5 is a cross-sectional view showing an epitaxial germanium wafer.
如圖4所示，在圖5所示的磊晶矽晶圓1的製造方法中，進行矽晶圓準備步驟(步驟S1)。 As shown in FIG. 4, in the method of manufacturing the epitaxial wafer 1 shown in FIG. 5, a germanium wafer preparation step (step S1) is performed.
在該矽晶圓準備步驟中，包括準備矽晶圓2的所有步驟，該矽晶圓2是對藉由CZ法或磁控拉晶法(MCZ法， Magnetic-Field Applied Czochralski Method)等而提拉的單晶錠，藉由包括切片、倒角、研削、磨削、蝕刻、研磨、洗淨等的所需各步驟，將表面21鏡面研磨而成。此時，矽晶圓2的氧濃度較佳為10×1017atoms/cm3以上且18×1017atoms/cm3(ASTM F-121,1979)以下。 In the enamel wafer preparation step, all the steps of preparing the ruthenium wafer 2 are performed by the CZ method or the Magnetic-Field Applied Czochralski Method (MCZ method). The drawn single crystal ingot is mirror-polished by surface 21 including various steps required for slicing, chamfering, grinding, grinding, etching, grinding, washing, and the like. At this time, the oxygen concentration of the germanium wafer 2 is preferably 10 × 10 17 atoms / cm 3 or more and 18 × 10 17 atoms / cm 3 (ASTM F-121, 1979) or less.
其次，進行在矽晶圓2上形成磊晶膜3的磊晶膜形成步驟。磊晶膜形成步驟包括升溫步驟(步驟S2)、磊晶膜成長步驟(步驟S3)、及降溫步驟(步驟S4)。 Next, an epitaxial film forming step of forming the epitaxial film 3 on the germanium wafer 2 is performed. The epitaxial film forming step includes a temperature increasing step (step S2), an epitaxial film growth step (step S3), and a temperature lowering step (step S4).
在升溫步驟中，在未圖示的磊晶裝置的反應容器內載置矽晶圓2，使反應容器內的溫度自室溫升溫至目標溫度。目標溫度是設定為1050℃~1280℃。反應容器內的溫度達到上述目標溫度後，進行在矽晶圓2的表面21使磊晶膜3成長的磊晶膜成長步驟。 In the temperature increasing step, the crucible wafer 2 is placed in a reaction container of an epitaxial device (not shown), and the temperature in the reaction vessel is raised from room temperature to a target temperature. The target temperature is set to 1050 ° C ~ 1280 ° C. After the temperature in the reaction vessel reaches the above target temperature, an epitaxial film growth step of growing the epitaxial film 3 on the surface 21 of the tantalum wafer 2 is performed.
在該磊晶膜成長步驟中，將三氯矽烷等成長氣體導入至反應容器內，在該成長氣體環境中進行磊晶膜3的成膜。此外，在該成膜中，亦可添加硼、磷等所需摻雜劑。 In the epitaxial film growth step, a growth gas such as trichlorosilane is introduced into the reaction container, and the deposition of the epitaxial film 3 is performed in the growth gas atmosphere. Further, in the film formation, a desired dopant such as boron or phosphorus may be added.
磊晶膜成長步驟是進行至磊晶膜3的膜厚T成為0.5μm以上且8.0μm以下為止。並且，將磊晶膜3成膜至成為上述膜厚T為止後，進行將磊晶矽晶圓1的溫度自使磊晶膜3成長時的溫度(上述目標溫度(1050℃~1280℃))降低至室溫的降溫步驟。 The epitaxial film growth step is performed until the film thickness T of the epitaxial film 3 is 0.5 μm or more and 8.0 μm or less. Then, after the epitaxial film 3 is formed to have the film thickness T, the temperature at which the temperature of the epitaxial wafer 1 is grown from the epitaxial film 3 (the target temperature (1050 ° C to 1280 ° C)) is performed. Lower the temperature to room temperature step.
在該降溫步驟中，以使磊晶膜3中的除該磊晶膜3的表面31以外的位置的氧濃度成為(表層氧濃度)2.5×1016atoms/cm3以上的方式控制磊晶矽晶圓1的降溫速度。具體而言，以將磊晶膜3的膜厚T設為X(μm)，將矽晶圓2的氧濃度設為Y(×1017atoms/cm3)，將降溫速度設為Z(℃/min)時滿足上述式(2)的 方式控制降溫速度。此外，所謂磊晶膜3的表層氧濃度，是指自磊晶膜3的表面31起的深度尺寸D的值為0.5μm~1.0μm的位置的氧濃度。 In the temperature decreasing step, the epitaxial enthalpy is controlled so that the oxygen concentration at the position other than the surface 31 of the epitaxial film 3 in the epitaxial film 3 becomes (surface oxygen concentration) 2.5 × 10 16 atoms/cm 3 or more. The cooling rate of wafer 1. Specifically, the film thickness T of the epitaxial film 3 is set to X (μm), the oxygen concentration of the germanium wafer 2 is set to Y (×10 17 atoms/cm 3 ), and the temperature drop rate is set to Z (° C. /min) The temperature drop rate is controlled in such a manner that the above formula (2) is satisfied. In addition, the surface layer oxygen concentration of the epitaxial film 3 means an oxygen concentration at a position of a depth dimension D from the surface 31 of the epitaxial film 3 at a position of 0.5 μm to 1.0 μm.
藉由如此控制降溫速度，可控制自矽晶圓2向磊晶膜3的擴散量，而製造磊晶膜3的表層氧濃度被調整為2.5×1016atoms/cm3以上且小於1.0×1017atoms/cm3的磊晶矽晶圓1。 By controlling the temperature drop rate in this way, the amount of diffusion from the wafer 2 to the epitaxial film 3 can be controlled, and the surface layer oxygen concentration of the epitaxial film 3 is adjusted to be 2.5 × 10 16 atoms / cm 3 or more and less than 1.0 × 10 17 atoms/cm 3 of epitaxial wafer 1 .
並且，對進行過上述實驗1的模擬半導體裝置的製造製程的熱處理的磊晶矽晶圓1與未進行該熱處理的磊晶矽晶圓1，進行上述實驗1的應力負載試驗，結果確認到無位錯的延展。 Further, the epitaxial germanium wafer 1 subjected to the heat treatment of the manufacturing process of the analog semiconductor device of the above experiment 1 and the epitaxial germanium wafer 1 not subjected to the heat treatment were subjected to the stress load test of the above experiment 1, and as a result, it was confirmed that Extension of dislocations.
[實施方式的作用效果] [Effects of Embodiments]
如上所述，在上述實施方式中，可發揮出如下所述的作用效果。 As described above, in the above embodiment, the following effects can be exhibited.
(1)藉由在降溫步驟中控制降溫速度的簡單方法，可製造能夠抑制位錯的延展的磊晶矽晶圓1。另外，無需設置磊晶膜形成步驟(升溫步驟(步驟S2)、磊晶膜成長步驟(步驟S3)、及降溫步驟(步驟S4))以外的步驟，因此不會導致製造效率的降低及製造設備的增加。因此，不會導致製造成本增加。 (1) By the simple method of controlling the temperature drop rate in the temperature lowering step, the epitaxial germanium wafer 1 capable of suppressing the dislocation can be manufactured. Further, since it is not necessary to provide a step other than the epitaxial film forming step (the temperature rising step (step S2), the epitaxial film growth step (step S3), and the temperature lowering step (step S4)), the manufacturing efficiency is not lowered and the manufacturing equipment is not required. Increase. Therefore, it does not lead to an increase in manufacturing costs.
(2)藉由在上述式(2)中代入磊晶膜3的膜厚T與矽晶圓2的氧濃度而算出降溫速度的簡單方法，可製造在不導致製造成本增加的情況下抑制位錯的延展的磊晶矽晶圓1。 (2) A simple method of calculating the temperature drop rate by substituting the film thickness T of the epitaxial film 3 and the oxygen concentration of the germanium wafer 2 in the above formula (2), and suppressing the bit can be produced without causing an increase in manufacturing cost. Wrong extended epitaxial wafer 1 .
[其他實施方式] [Other embodiments]
此外，本發明並不僅限定於上述實施方式，可在不偏離本發明的主旨的範圍內進行各種改良以及設計的變更等。 In addition, the present invention is not limited to the above-described embodiments, and various modifications, design changes, and the like can be made without departing from the spirit of the invention.
即，在降溫步驟中，亦可不使用基於上述式(2)所求 出的降溫速度，而基於在多種條件下進行的實驗，以可製造磊晶膜3的表層氧濃度被調整為2.5×1016atoms/cm3以上且小於1.0×1017atoms/cm3的磊晶矽晶圓1的方式設定降溫速度。 That is, in the temperature lowering step, the surface oxygen concentration at which the epitaxial film 3 can be produced can be adjusted to 2.5 × 10 based on the experiment conducted under various conditions without using the cooling rate determined by the above formula (2). The temperature drop rate is set in such a manner that the epitaxial germanium wafer 1 of 16 atoms/cm 3 or more and less than 1.0 × 10 17 atoms/cm 3 is used.
另外，在降溫步驟中，亦可藉由基於上述式(2)或不基於上述式(2)，控制降溫速度，而製造磊晶膜3的表層氧濃度被調整為1.0×1017atoms/cm3以上的磊晶矽晶圓。對於藉由上述方法所製成的磊晶矽晶圓，亦可抑制位錯的延展。 Further, in the temperature lowering step, the surface oxygen concentration of the epitaxial film 3 can be adjusted to 1.0 × 10 17 atoms/cm by controlling the temperature drop rate based on the above formula (2) or not based on the above formula (2). More than 3 epitaxial wafers. For the epitaxial wafer fabricated by the above method, the extension of dislocations can also be suppressed.
進而，矽晶圓2的氧濃度可小於10×1017atoms/cm3，亦可超過18×1017atoms/cm3。 Further, the silicon wafer 2 may have an oxygen concentration of less than 10 × 10 17 atoms/cm 3 or more than 18 × 10 17 atoms/cm 3 .
S1-S4‧‧‧步驟 S1-S4‧‧‧ steps
Claims (4)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013244056A JP6131842B2 (en) | 2013-11-26 | 2013-11-26 | Epitaxial silicon wafer manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201521090A true TW201521090A (en) | 2015-06-01 |
| TWI533356B TWI533356B (en) | 2016-05-11 |
Family
ID=53198733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103134821A TWI533356B (en) | 2013-11-26 | 2014-10-07 | Epitaxial silicon wafer and method for manufacturing epitaxial silcon wafer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6131842B2 (en) |
| CN (1) | CN105723497B (en) |
| TW (1) | TWI533356B (en) |
| WO (1) | WO2015079777A1 (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| JPH11145147A (en) * | 1997-11-11 | 1999-05-28 | Nec Corp | Semiconductor device and its manufacture |
| JPH11150119A (en) * | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | Method and device for heat-treating silicon semiconductor substance |
| JP2002012496A (en) * | 1999-10-19 | 2002-01-15 | Shin Etsu Handotai Co Ltd | Silicon epitaxial wafer and method for producing the same |
| CN100461349C (en) * | 2003-10-21 | 2009-02-11 | 株式会社上睦可 | Process for producing high resistance silicon wafer, and process for producing epitaxial wafer and SOI wafer |
| JP5276863B2 (en) * | 2008-03-21 | 2013-08-28 | グローバルウェーハズ・ジャパン株式会社 | Silicon wafer |
| JP5846025B2 (en) * | 2012-04-12 | 2016-01-20 | 信越半導体株式会社 | Epitaxial wafer manufacturing method |
| JP5704155B2 (en) * | 2012-12-19 | 2015-04-22 | 株式会社Sumco | Epitaxial wafer manufacturing method |
-
2013
- 2013-11-26 JP JP2013244056A patent/JP6131842B2/en active Active
-
2014
- 2014-09-12 WO PCT/JP2014/074180 patent/WO2015079777A1/en active Application Filing
- 2014-09-12 CN CN201480063950.7A patent/CN105723497B/en active Active
- 2014-10-07 TW TW103134821A patent/TWI533356B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI533356B (en) | 2016-05-11 |
| CN105723497B (en) | 2018-09-14 |
| WO2015079777A1 (en) | 2015-06-04 |
| JP2015103703A (en) | 2015-06-04 |
| JP6131842B2 (en) | 2017-05-24 |
| CN105723497A (en) | 2016-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101768777B (en) | Silicon wafer and method of manufacturing the same | |
| CN100527369C (en) | Silicon wafer for igbt and method for producing same | |
| JP6156188B2 (en) | Epitaxial silicon wafer manufacturing method | |
| TWI548785B (en) | Silicon wafer and manufacturing method for the same | |
| US9991386B2 (en) | Epitaxial wafer and method of manufacturing the same | |
| JP2004006615A (en) | High resistance silicon wafer and its manufacturing method | |
| JP5217245B2 (en) | Silicon single crystal wafer and manufacturing method thereof | |
| JP2018510492A (en) | Epitaxially coated semiconductor wafer and method of manufacturing epitaxially coated semiconductor wafer | |
| JP6973475B2 (en) | Manufacturing method of epitaxial silicon wafer and epitaxial silicon wafer | |
| WO2017018141A1 (en) | Epitaxial silicon wafer | |
| TWI533356B (en) | Epitaxial silicon wafer and method for manufacturing epitaxial silcon wafer | |
| JP6299835B1 (en) | Epitaxial silicon wafer and method of manufacturing epitaxial silicon wafer | |
| KR20130109044A (en) | Silicon wafer | |
| JP6260485B2 (en) | Epitaxial silicon wafer manufacturing method | |
| JP7342392B2 (en) | Epitaxial silicon wafer manufacturing method and epitaxial silicon wafer | |
| JP2011228459A (en) | Silicon wafer and method of manufacturing the same | |
| WO2021166896A1 (en) | Method for manufacturing semiconductor silicon wafer | |
| JP2009274901A (en) | Method for growing silicon single crystal | |
| JP2017105675A (en) | Method of manufacturing silicon single crystal | |
| JP2015199651A (en) | Method of introducing dopant to group 13 nitride single crystal |