CN105723497B - The manufacturing method of epitaxial silicon chip and epitaxial silicon chip - Google Patents

The manufacturing method of epitaxial silicon chip and epitaxial silicon chip Download PDF

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CN105723497B
CN105723497B CN201480063950.7A CN201480063950A CN105723497B CN 105723497 B CN105723497 B CN 105723497B CN 201480063950 A CN201480063950 A CN 201480063950A CN 105723497 B CN105723497 B CN 105723497B
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silicon chip
epitaxial
oxygen concentration
epitaxial film
film
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CN105723497A (en
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鸟越和尚
小野敏昭
中村浩三
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Sumco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Manufacturing & Machinery (AREA)
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  • General Chemical & Material Sciences (AREA)
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  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The manufacturing method of epitaxial silicon chip has following process：The epitaxial film growth process for making epitaxial film be grown on the surface of silicon chip（Step S3）And the cooling process for beginning to decline the temperature of epitaxial silicon chip from temperature when making epitaxial film growth（Step S4）, the rate of temperature fall of epitaxial silicon chip is controlled in cooling process, so that the oxygen concentration of the position not including the surface of the epitaxial film in epitaxial film reaches 2.5 × 1016atoms/cm3More than.

Description

The manufacturing method of epitaxial silicon chip and epitaxial silicon chip
Technical field
The present invention relates to the manufacturing methods of epitaxial silicon chip and epitaxial silicon chip.
Background technology
Make epitaxial film extension obtained from vapor phase growth on the surface of the silicon chip cut by silicon single crystal known to previous Chip.
When oxygen concentration in epitaxial film is low, such as in the heat treatment of apparatus and process etc., dislocation is generated in epitaxial film sometimes, The dislocation stretches.Thus, carry out the research for preventing this dislocation stretching, extension（Referring for example to patent document 1）.
It finds that the oxygen concentration of epitaxial film surface is related with the generation of dislocation in patent document 1, and describes：By the way that this is outer The oxygen concentration for prolonging film surface is set as 1.0 × 1017~12×1017atoms/cm3（ASTM F-121,1979）, dislocation can be prevented Stretching, extension.And it describes：As the manufacturing method of the epitaxial wafer with this characteristic, after the formation process of epitaxial film, Carry out the oxygen concentration setting heat treatment procedure handled with non-oxidizing atmosphere or oxidizing atmosphere.
Oxygen concentration by carrying out non-oxidizing atmosphere sets heat treatment procedure, and the oxygen for being solid-solution in silicon chip expands to epitaxial film It dissipates, the oxygen concentration of epitaxial film rises.
In addition, setting heat treatment procedure by the oxygen concentration for carrying out oxidizing atmosphere, oxidation is formed on the surface of epitaxial film Film, the oxygen of the oxidation film are spread to the inside of epitaxial film, also, the oxygen of silicon chip is to extension membrane diffusion, on the oxygen concentration of epitaxial film It rises.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2010-141272 bulletins.
Invention content
The subject that the invention solves
However, patent document 1 is recorded in such manufacturing method, oxygen concentration sets shape of the heat treatment procedure with epitaxial film It is carried out at the different device of the manufacturing device used in process such as vertical heater, monolithic stove, therefore manufacturing equipment becomes more.In addition, Between formation process and oxygen concentration the setting heat treatment procedure of epitaxial film, need to carry epitaxial silicon chip, manufacture effect in equipment room Rate reduces.The problem of increasing accordingly, there exist the manufacturing cost of epitaxial silicon chip.
The object of the present invention is to provide dislocation can be inhibited to stretch without to incur the increased epitaxial silicon of manufacturing cost The manufacturing method of piece and epitaxial silicon chip.
The means used to solve the problem
The present inventor is repeated further investigation and is conceived to：When by the temperature of epitaxial silicon chip from epitaxial film growth Temperature starts in the cooling process reduced, by controlling rate of temperature fall, there is the expansion that can be controlled from silicon chip to extension membrane diffusion Dissipate amount, the possibility for the oxygen concentration that epitaxial film can be controlled.Thus, present inventor is tested as follows.
<Experiment 1>
Utilize CZ methods（Czochralski method）The different a variety of single crystal rods of oxygen concentration are manufactured, silicon is cut out by each single crystal rod Piece.By the oxygen concentration of silicon chip（Hereinafter, sometimes referred to as " substrate oxygen concentration "）It is shown in table 1.
By silicon chip（100）Face makes film thickness as mirror ultrafinish face（Hereinafter sometimes referred to " epitaxial film thickness "）Outside for 3 μm Prolong film and is grown on the mirror ultrafinish face.Epitaxial film be grown in the gas atmospheres such as trichlorosilane with 1150 DEG C or so of temperature into Row.Also, pass through such rate of temperature fall shown in table 1（Hereinafter sometimes referred to " rate of temperature fall of epitaxial process "）Outside lower progress Prolong the cooling process after film growth, epitaxial silicon chip is cooled to room temperature, the oxygen concentration of epitaxial film is measured.The measurement of oxygen concentration utilizes SIMS（Ion microprobe）It carries out.It will be apart from epitaxial film surface（The surface of the opposite side of silicon chip）Depth dimensions be 0.5 μ Average oxygen concentration in the range of m ~ 1.0 μm（Hereinafter sometimes referred to " surface layer oxygen concentration "）It is shown in table 1.
In turn, stress load test is carried out for the epitaxial silicon chip made of above-mentioned technique.
First, from the test sample of epitaxial silicon chip cut-out length 3cm, width 1.5cm.Then, micro-vickers hardness is used Count the surface to test sample（The surface of epitaxial film）Apply 2g load and kept for 10 seconds, to import impression.Also, with The distance between the fulcrum of 2cm, 800 DEG C of test temperature implement 3 bend tests to test sample.At this point, apply the load of 2N, Tensile stress is set to act on the surface side of test sample.
Thereafter, the photetching for implementing 2 μm for the test sample being cooled to room temperature, determines whether to deposit using light microscope In the dislocation pit observed at the epitaxial film surface that the impression for being directed into epitaxial film generates.Measurement result is shown in table 1.
[table 1]
It understands like that as shown in table 1：If substrate oxygen concentration is constant, the rate of temperature fall of epitaxial process is smaller, in other words gets over It is Slow cooling, then the surface layer oxygen concentration of epitaxial silicon chip becomes higher.
In addition, understanding like that as shown in table 1：If the surface layer oxygen concentration of epitaxial silicon chip is 2.5 × 1016atoms/cm3（ASTM F-121,1979）More than, then it is stretched without dislocation（There is no dislocation pit）.
In turn, for the epitaxial silicon chip made under conditions of no dislocation stretches, it is simulated semiconductor equipment system Make the heat treatment of technique.Specifically, carrying out successively at 1000 DEG C at 1 hour, 900 DEG C 2 hours, 650 DEG C at 1 hour, 800 DEG C Lower 3 hours 4 phase heat treatments.In addition, the mixed atmosphere of nitrogen and oxygen is made in the atmosphere being respectively heat-treated（Oxygen concentration is 3%）. Thereafter, above-mentioned stress load test is carried out for the epitaxial silicon chip being heat-treated.
About known to the epitaxial silicon chip being heat-treated with above-mentioned condition：There is no the stretching, extension of dislocation.
In this experiment 1, it is known that：In order to eliminate the stretching, extension of dislocation, depth dimensions apart from epitaxial film surface are 0.5 μm ~ The oxygen concentration of 1.0 μm of position is 2.5 × 1016atoms/cm3It is above.On the other hand, it is recorded in patent document 1：For The stretching, extension for eliminating dislocation, the depth dimensions apart from epitaxial film surface are 80nm ~ 200nm（0.08μm~0.2μm）Position oxygen Concentration is set in 1.0 × 1017atoms/cm3~12×1017atoms/cm3.Herein, in general, the oxygen concentration of epitaxial film is in silicon Piece side gets higher, is lower in the surface side of epitaxial film, is phase with this experiment 1 it is therefore contemplated that in the composition of patent document 1 Oxygen concentration with depth location is 1.0 × 1017atoms/cm3~12×1017atoms/cm3More than.
From the above content：Compared with the composition of patent document 1, it can be eliminated reducing the oxygen concentration of epitaxial film The stretching, extension of dislocation.
The present invention is completed based on opinion as described above.
That is, the epitaxial silicon chip of the present invention is characterized in that, to be provided with the epitaxial silicon chip of epitaxial film on the surface of silicon chip, The oxygen concentration of the position not including the surface of the epitaxial film in aforementioned epitaxial film is 2.5 × 1016atoms/cm3（ASTM F-121,1979）Above and less than 1.0 × 1017atoms/cm3。
In addition, the manufacturing method of the epitaxial silicon chip of the present invention is characterized in that, to be provided with extension on the surface of silicon chip The manufacturing method of the epitaxial silicon chip of film, has following process：The extension for making aforementioned epitaxial film be grown on the surface of aforementioned silicon chip The cooling work that film grows process and begins to decline the temperature of aforementioned epitaxial silicon chip from temperature when making aforementioned epitaxial film growth Sequence controls the rate of temperature fall of aforementioned epitaxial silicon chip in aforementioned cooling process, so as in aforementioned epitaxial film not include the epitaxial film Surface including the oxygen concentration of position reach 2.5 × 1016atoms/cm3（ASTM F-121,1979）More than.
The manufacturing method of epitaxial silicon chip according to the present invention can be abundant by controlling rate of temperature fall in cooling process The oxygen concentration for improving epitaxial film surface section can manufacture the epitaxial silicon chip that can inhibit dislocation stretching, extension.In addition, it is not necessary that epitaxial film is arranged Formation process other than process, therefore the reduction of manufacture efficiency and the increase of manufacturing equipment will not be incurred.Therefore, will not incur The increase of manufacturing cost.
In addition, epitaxial silicon chip according to the present invention, by the way that the oxygen concentration of the position not including epitaxial film surface is ensured to be At least 2.5 × 1016atoms/cm3More than, it can fully inhibit the stretching, extension of dislocation in the heat treatment process of apparatus and process, even if Oxygen concentration is less than 1.0 × 1017atoms/cm3Also the stretching, extension of dislocation can fully be inhibited.It should be noted that oxygen concentration gets over Gao Ze The effect for inhibiting dislocation stretching, extension can more be increased, but the rising of manufacturing cost can be caused, and is impracticable.As described above, of the invention Epitaxial wafer be capable of providing to can inhibit dislocation and stretch without and incur the increased epitaxial silicon chip of manufacturing cost.
It should be noted that " temperature of epitaxial silicon chip " in the present invention includes the actual temperature of epitaxial silicon chip and makes extension Component when film is grown for accommodating silicon chip（For example, the reaction vessel of epitaxial apparatus）Both interior temperature.
In the epitaxial silicon chip of the present invention, the oxygen concentration of aforementioned silicon chip is preferably 10 × 1017atoms/cm3Above and 18 × 1017atoms/cm3（ASTM F-121,1979）Below.
It confirmed herein：Even if oxygen is from silicon chip to extension membrane diffusion, substrate oxygen concentration（The oxygen concentration of silicon chip）Before diffusion It is also basically unchanged afterwards.
Epitaxial silicon chip according to the present invention is set by using by substrate oxygen concentration to the silicon chip of above range, Neng Gouli The oxygen that the amount of dislocation stretching, extension does not occur is set to diffuse to extension with the only straightforward procedure of the rate of temperature fall of control epitaxial growth processing Film.
In addition, result of the present inventor based on above-mentioned experiment 1 has carried out experiment 2,3 below.
<Experiment 2>
Epitaxial film thickness is set as 2 μm, and the rate of temperature fall of substrate oxygen concentration and epitaxial process is set as following table 2 In addition to this condition is carried out making and the stress load test of epitaxial silicon chip using condition identical with experiment 1, measured outside Prolong the dislocation pit that film surface is observed.Measurement result is shown in table 2.
[table 2]
<Experiment 3>
Epitaxial film thickness is set as 4 μm, and the rate of temperature fall of substrate oxygen concentration and epitaxial process is set as following table 3 In addition to this condition is carried out making and the stress load test of epitaxial silicon chip using condition identical with experiment 1, measured outside Prolong the dislocation pit that film surface is observed.Measurement result is shown in table 3.
[table 3]
Known to as shown in 1 ~ table of table 3：Regardless of epitaxial film thickness, if substrate oxygen concentration is constant, epitaxial process Rate of temperature fall is smaller, in other words gets over Slow cooling, then can more eliminate the stretching, extension of dislocation.
In addition, though do not showed that in table 2,3, but without the surface layer oxygen concentration of the epitaxial silicon chip of dislocation stretching, extension be 2.5 × 1016atoms/cm3More than.On the other hand, the surface layer oxygen concentration of the epitaxial silicon chip with dislocation stretching, extension less than 2.5 × 1016atoms/cm3。
In turn, for the epitaxial silicon chip that makes under conditions of being stretched without dislocation in experiment 2,3, in the same manner as experiment 1 Simulate heat treatment and the stress load test of semiconductor equipment manufacturing process.Known to its result：Using arbitrary condition into The epitaxial silicon chip being heat-treated of having gone does not have the stretching, extension of dislocation.
Thus, based on this as a result, can be had studied for each epitaxial film thickness calculate rate of temperature fall appropriate.By epitaxial film The relationship of substrate oxygen concentration and rate of temperature fall when thickness is 3 μm, 2 μm, 4 μm is shown in Fig. 1, Fig. 2, Fig. 3.
Such as Fig. 1 ~ as shown in Figure 3, the curve of approximation of the condition of no dislocation stretching, extension, which becomes, is represented by dashed line such song Line.Epitaxial film thickness is set as X（μm）, substrate oxygen concentration is set as Y（×1017atoms/cm3（ASTM F-121,1979））, will Rate of temperature fall is set as Z（℃/min）, Fig. 1 ~ whole curve of approximation shown in Fig. 3 can be with such as following formula（1）It indicates.
Z=3.55×X-6.47×Y5.15… （1）
It can thus be appreciated that：By the way that rate of temperature fall is set as above-mentioned formula（1）In obtained Z values hereinafter, dislocation can be made without The epitaxial silicon chip of stretching, extension.
That is, in the manufacturing method of the epitaxial silicon chip of the present invention, it is preferred that the film thickness of aforementioned epitaxial film is set as X（μm）、 The oxygen concentration of aforementioned silicon chip is set as Y（×1017atoms/cm3（ASTM F-121,1979））, aforementioned rate of temperature fall is set as Z （℃/min）, aforementioned cooling process is to meet such as following formula（2）Mode carry out.
Z≤3.55×X-6.47×Y5.15… （2）.
The manufacturing method of epitaxial silicon chip according to the present invention, by stating formula only up（2）It is middle import epitaxial film film thickness and The oxygen concentration of silicon chip finds out the straightforward procedure of rate of temperature fall to calculate, and can manufacture to can inhibit dislocation and stretch without incurs manufacture The increased epitaxial silicon chip of cost.
Description of the drawings
Fig. 1 be in order to the rate of temperature fall export regulation formula in the present invention and the experiment 1 implemented as a result, being epitaxial film thickness The schematic diagram of the relationship of substrate oxygen concentration and rate of temperature fall when being 3 μm.
Fig. 2 be in order to regulation formula exported to aforementioned rate of temperature fall and the experiment 2 implemented as a result, be epitaxial film thickness being 2 μm When substrate oxygen concentration and rate of temperature fall relationship schematic diagram.
Fig. 3 be in order to regulation formula exported to aforementioned rate of temperature fall and the experiment 3 implemented as a result, be epitaxial film thickness being 4 μm When substrate oxygen concentration and rate of temperature fall relationship schematic diagram.
Fig. 4 is the flow chart of the manufacturing method for the epitaxial silicon chip for indicating an embodiment of the invention.
Fig. 5 is the sectional view for the epitaxial silicon chip for indicating an aforementioned embodiment.
Specific implementation mode
[embodiment]
Hereinafter, being explained with reference to embodiments of the present invention.
Fig. 4 is the flow chart for the manufacturing method for indicating epitaxial silicon chip.Fig. 5 is the sectional view for indicating epitaxial silicon chip.
As shown in Figure 4, in the manufacturing method of epitaxial silicon chip 1 shown in Fig. 5, silicon chip preparatory process is carried out（Step S1）.
The silicon chip preparatory process includes whole processes as follows：Pass through CZ methods, MCZ（Magnetic field, which applies, cuts krousky）Method Deng for the single crystal rod lifted, utilizing respectively must including slice, chamfering, grinding, brushing, etching, grinding, cleaning etc. Process is wanted, silicon chip 2 of the surface 21 through mirror ultrafinish is prepared.At this point, the oxygen concentration of silicon chip 2 is preferably 10 × 1017atoms/cm3With It is upper and 18 × 1017atoms/cm3（ASTM F-121,1979）Below.
Then, into the epitaxial film formation process for being about to epitaxial film 3 and being formed in silicon chip 2.Epitaxial film formation process includes：Heating Process（Step S2）, epitaxial film growth process（Step S3）And cooling process（Step S4）.
In heating process, silicon chip 2 is loaded into the reaction vessel of epitaxial apparatus (not shown), makes the temperature in reaction vessel From room temperature to target temperature.Target temperature is set in 1050 DEG C ~ 1280 DEG C.Temperature in reaction vessel reaches above-mentioned mesh When marking temperature, into exercising the epitaxial film growth process that is grown on the surface of silicon chip 2 21 of epitaxial film 3.
In the epitaxial film growth process, the growth gasses such as trichlorosilane are imported in reaction vessel, in the growth gasses gas The film forming of epitaxial film 3 is carried out in atmosphere.It should be noted that in the film forming, the necessary dopant such as boron, phosphorus can also be added.
Epitaxial film growth process carries out until the film thickness T of epitaxial film 3 reaches 0.5 μm or more and 8.0 μm or less.Also, Film forming is to epitaxial film 3 when reaching above-mentioned film thickness T, into being about to the temperature of epitaxial silicon chip 1 from temperature when epitaxial film 3 being made to grow（On State target temperature（1050℃~1280℃））It is reduced to the cooling process of room temperature.
In the cooling process, the rate of temperature fall of epitaxial silicon chip 1 is controlled, so as in epitaxial film 3 not include the epitaxial film 3 The oxygen concentration of position including surface 31（Surface layer oxygen concentration）Reach 2.5 × 1016atoms/cm3More than.Specifically, by extension The film thickness T of film 3 is set as X（μm）, the oxygen concentration of silicon chip 2 is set as Y（×1017atoms/cm3）, rate of temperature fall is set as Z（℃/ min）, to meet above-mentioned formula（2）Mode control rate of temperature fall.It should be noted that the surface layer oxygen concentration of epitaxial film 3 is span The oxygen concentration for the position that the value of depth dimensions D from 3 surface 31 of epitaxial film is 0.5 μm ~ 1.0 μm.
By controlling this rate of temperature fall, the diffusing capacity spread from silicon chip 2 to epitaxial film 3 is controlled, and can be manufactured outer The surface layer oxygen concentration for prolonging film 3 is adjusted to 2.5 × 1016atoms/cm3Above and less than 1.0 × 1017atoms/cm3Epitaxial silicon Piece 1.
Also, 1 He of epitaxial silicon chip of the heat treatment for the semiconductor equipment manufacturing process for being simulated above-mentioned experiment 1 The epitaxial silicon chip 1 for not carrying out the heat treatment can confirm the stretching, extension of not dislocation when carrying out the stress load test of above-mentioned experiment 1.
[function and effect of embodiment]
As described above, function and effect as following can be played in the above embodiment.
（1）Using the straightforward procedure for controlling rate of temperature fall only in cooling process, it can manufacture and can inhibit dislocation stretching, extension Epitaxial silicon chip 1.In addition, it is not necessary that epitaxial film formation process is arranged（Heating process（Step S2）, epitaxial film growth process（Step S3）, cooling process（Step S4））Therefore process in addition will not incur the reduction of manufacture efficiency and the increase of manufacturing equipment. Therefore it will not incur the increase of manufacturing cost.
（2）By stating formula only up（2）It is middle import epitaxial film 3 film thickness T and silicon chip 2 oxygen concentration and calculating find out cooling The straightforward procedure of rate, can manufacture to can inhibit dislocation and stretch without incurs the increased epitaxial silicon chip of manufacturing cost 1.
[other embodiment]
It should be noted that the present invention is not only limited to the above embodiment, in the range for not departing from present subject matter It is interior, the change etc. of various improvement and design can be carried out.
That is, in cooling process, rate of temperature fall can be set based on the experiment carried out under multiple conditions, without the use of Based on above-mentioned formula（2）The rate of temperature fall found out, the surface layer oxygen concentration can manufacture epitaxial film 3 is adjusted to 2.5 × 1016atoms/cm3Above and less than 1.0 × 1017atoms/cm3Epitaxial silicon chip 1.
In addition, in cooling process, by being based on above-mentioned formula（2）Or it is not based on above-mentioned formula（2）Control rate of temperature fall, The surface layer oxygen concentration that epitaxial film 3 can be manufactured is adjusted to 1.0 × 1017atoms/cm3Above epitaxial silicon chip.Even if manufacturing in this way Epitaxial silicon chip can also inhibit the stretching, extension of dislocation.
In turn, the oxygen concentration of silicon chip 2 can be less than 10 × 1017atoms/cm3, can also be more than 18 × 1017atoms/ cm3。
Reference sign
1 ... epitaxial silicon chip
2 ... silicon chips
3 ... epitaxial films
The surface of 21 ... silicon chips
The surface of 31 ... epitaxial films

Claims (2)

1. the manufacturing method of epitaxial silicon chip, to be provided with the manufacturing method of the epitaxial silicon chip of epitaxial film on the surface of silicon chip, It is characterized in that having following process：
Make the epitaxial film the silicon chip surface grow epitaxial film growth process and
The cooling process that the temperature of the epitaxial silicon chip is begun to decline from temperature when making the epitaxial film growth,
In the cooling process, the drop of the epitaxial silicon chip is controlled according to the oxygen concentration of the film thickness of the epitaxial film and the silicon chip Warm rate so that the oxygen concentration of the position not including the surface of the epitaxial film in the epitaxial film reach 2.5 × 1016atoms/cm3（ASTM F-121,1979）More than.
2. the manufacturing method of epitaxial silicon chip according to claim 1, which is characterized in that
By the film thickness of the epitaxial film be set as X,
By the oxygen concentration of the silicon chip be set as Y,
The rate of temperature fall is set as Z,
The cooling process is to meet such as following formula（1）Mode carry out,
Z≤3.55×X-6.47×Y5.15… （1）,
The unit of the film thickness of epitaxial film is μm that the unit of the oxygen concentration of silicon chip is × 1017atoms/cm3（ASTM F-121, 1979）, the unit of rate of temperature fall is DEG C/min.
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