CN105723497A - Epitaxial silicon wafer and epitaxial silicon wafer manufacturing method - Google Patents
Epitaxial silicon wafer and epitaxial silicon wafer manufacturing method Download PDFInfo
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- CN105723497A CN105723497A CN201480063950.7A CN201480063950A CN105723497A CN 105723497 A CN105723497 A CN 105723497A CN 201480063950 A CN201480063950 A CN 201480063950A CN 105723497 A CN105723497 A CN 105723497A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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Abstract
This epitaxial silicon wafer manufacturing method is provided with: an epitaxial film growing step (step (S3)) for growing an epitaxial film on a surface of a silicon wafer; and a temperature reducing step (step (S4)) for reducing the temperature of the epitaxial silicon wafer from a temperature at which the epitaxial film is grown. In the temperature reducing step, the temperature reducing rate of the epitaxial silicon wafer is controlled such that the oxygen concentration at an epitaxial film position, excluding the surface of the epitaxial film, is equal to or more than 2.5*1016 atoms/cm<3>.
Description
Technical field
The present invention relates to the manufacture method of epitaxial silicon chip and epitaxial silicon chip.
Background technology
In the past known make epitaxial film vapor phase growth and epitaxial wafer of obtaining on the surface of silicon chip obtained by silicon single crystal cutting.
When oxygen concentration in epitaxial film is low, for instance in the heat treatment of apparatus and process etc., sometimes producing dislocation in epitaxial film, this dislocation stretches.Thus, carry out the research (referring for example to patent documentation 1) for preventing this dislocation from stretching.
Patent documentation 1 finding, the oxygen concentration of epitaxial film surface is relevant with the generation of dislocation, and describes: by the oxygen concentration of this epitaxial film surface is set as 1.0 × 1017~12×1017atoms/cm3(ASTMF-121,1979), it is possible to prevent the stretching, extension of dislocation.And describe: as the manufacture method of the epitaxial wafer with this characteristic, after the formation process of epitaxial film, carry out the oxygen concentration with non-oxidizing atmosphere or oxidizing atmosphere process and set heat treatment step.
Setting heat treatment step by carrying out the oxygen concentration of non-oxidizing atmosphere, be solid-solution in the oxygen of silicon chip to extension membrane diffusion, the oxygen concentration of epitaxial film rises.
It addition, set heat treatment step by carrying out the oxygen concentration of oxidizing atmosphere, form oxide-film on the surface of epitaxial film, the oxygen of this oxide-film to the diffusion inside of epitaxial film, and, the oxygen of silicon chip is to extension membrane diffusion, and the oxygen concentration of epitaxial film rises.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2010-141272 publication.
Summary of the invention
The problem that invention to solve
But, patent documentation 1 is recorded in such manufacture method, and oxygen concentration sets heat treatment step the device such as vertical heater different from the manufacture device used by the formation process of epitaxial film, monolithic stove to carry out, and the equipment that therefore manufactures becomes many.It addition, formation process and oxygen concentration at epitaxial film set between heat treatment step, it is necessary to carry epitaxial silicon chip at equipment room, manufacture efficiency and reduce.Accordingly, there exist the problem that the manufacturing cost of epitaxial silicon chip increases.
It is an object of the invention to, it is provided that dislocation can be suppressed to stretch without the manufacture method of epitaxial silicon chip and the epitaxial silicon chip causing manufacturing cost increase.
Means for solving the above
The present inventor is repeated further investigation and is conceived to: the temperature when by the temperature of epitaxial silicon chip from epitaxial film growth starts the cooling process reduced, by controlling rate of temperature fall, there is the probability that can control from silicon chip to the diffusing capacity of extension membrane diffusion, the oxygen concentration that namely can control epitaxial film.Thus, present inventor tests as follows.
<experiment 1>
Utilize CZ method (Czochralski method) to manufacture the multiple single crystal rod that oxygen concentration is different, each single crystal rod cut out silicon chip.The oxygen concentration (following, to be sometimes referred to as " substrate oxygen concentration ") of silicon chip is shown in table 1.
Using (100) face of silicon chip as mirror ultrafinish face, the epitaxial film growth making thickness (hereinafter sometimes referred to " epitaxial film thickness ") be 3 μm is in this mirror ultrafinish face.Epitaxial film be grown in the gas atmospheres such as trichlorosilane to carry out with the temperature of about 1150 DEG C.Further, by the cooling process after carrying out epitaxial film growth under rate of temperature fall (hereinafter sometimes referred to " rate of temperature fall of epitaxial process ") such shown in table 1, epitaxial silicon chip is cooled to room temperature, measures the oxygen concentration of epitaxial film.The mensuration of oxygen concentration utilizes SIMS(ion microprobe) carry out.Average oxygen concentration (hereinafter sometimes referred to " top layer oxygen concentration ") in the scope that depth dimensions is 0.5 μm ~ 1.0 μm of epitaxial film surface (surface of the opposition side of silicon chip) is shown in table 1.
And then, carry out stress load test for the epitaxial silicon chip made by above-mentioned technique.
First, from the test sample of epitaxial silicon chip cut-out length 3cm, width 1.5cm.Then, with micro Vickers, the surface (surface of epitaxial film) of test sample is applied 2g load and keeps 10 seconds, thus importing impression.Further, with the test temperature of the distance between the fulcrum of 2cm, 800 DEG C, test sample is implemented 3 bend tests.Now, apply the load of 2N, make tensile stress act on the face side of test sample.
Thereafter, implement the photetching of 2 μm for the test sample being cooled to room temperature, use whether light microscope determining exists the dislocation pit that the epitaxial film surface from the impression generation being directed into epitaxial film is observed.Measurement result is shown in table 1.
[table 1]
As shown in table 1 known like that: if substrate oxygen concentration is constant, then the rate of temperature fall of epitaxial process is more little, in other words Slow cooling, then the top layer oxygen concentration of epitaxial silicon chip becomes more high.
It addition, known like that as shown in table 1: if the top layer oxygen concentration of epitaxial silicon chip is 2.5 × 1016atoms/cm3More than (ASTMF-121,1979), then dislocation is not had to stretch (not having dislocation pit).
And then, for the epitaxial silicon chip made when not having dislocation to stretch, it is simulated the heat treatment of semiconductor equipment manufacturing process.Specifically, it is sequentially carried out at 1000 DEG C at 1 hour, 900 DEG C at 1 hour, 800 DEG C 4 phase heat treatment of 3 hours at 2 hours, 650 DEG C.It addition, each heat treated atmosphere makes the mixed atmosphere (oxygen concentration is 3%) of nitrogen and oxygen.Thereafter, above-mentioned stress load test is carried out for having carried out heat treated epitaxial silicon chip.
Known about having carried out heat treated epitaxial silicon chip by above-mentioned condition: there is no the stretching, extension of dislocation.
In this experiment 1, it is known that: in order to eliminate the stretching, extension of dislocation, the oxygen concentration of the position that depth dimensions is 0.5 μm ~ 1.0 μm of distance epitaxial film surface is 2.5 × 1016atoms/cm3More than.On the other hand, describing in patent documentation 1: in order to eliminate the stretching, extension of dislocation, the depth dimensions of distance epitaxial film surface is 80nm ~ 200nm(0.08 μm ~ 0.2 μm) the oxygen concentration of position be set in 1.0 × 1017atoms/cm3~12×1017atoms/cm3.Herein, in general, the oxygen concentration of epitaxial film uprises in silicon chip side, at the face side step-down of epitaxial film, it is therefore contemplated that in the composition of patent documentation 1, be 1.0 × 10 with the oxygen concentration that this experiment 1 is same depth position17atoms/cm3~12×1017atoms/cm3Above.
Known by above content: compared with the constituting of patent documentation 1, even if the oxygen concentration reducing epitaxial film also is able to eliminate the stretching, extension of dislocation.
The present invention is based on opinion as described above and completes.
That is, the epitaxial silicon chip of the present invention is characterised by, it is the epitaxial silicon chip having epitaxial film in the surface configuration of silicon chip, and the oxygen concentration of the position on the surface not including this epitaxial film in aforementioned epitaxial film is 2.5 × 1016atoms/cm3(ASTMF-121,1979) more than and less than 1.0 × 1017atoms/cm3。
Additionally, the manufacture method of the epitaxial silicon chip of the present invention is characterised by, it for there being the manufacture method of the epitaxial silicon chip of epitaxial film in the surface configuration of silicon chip, it possesses following operation: make aforementioned epitaxial film the epontic epitaxial film growth operation of aforementioned silicon chip and by the temperature of aforementioned epitaxial silicon chip from the cooling process making temperature during aforementioned epitaxial film growth begin to decline, aforementioned cooling process controls the rate of temperature fall of aforementioned epitaxial silicon chip, so that the oxygen concentration of the position on the surface not including this epitaxial film in aforementioned epitaxial film reaches 2.5 × 1016atoms/cm3(ASTMF-121,1979) more than.
The manufacture method of the epitaxial silicon chip according to the present invention, by controlling rate of temperature fall, it is possible to fully improve the oxygen concentration of epitaxial film skin section, it is possible to manufacture the epitaxial silicon chip that dislocation can be suppressed to stretch in cooling process.It addition, without arranging the operation beyond the formation process of epitaxial film, thus without causing the reduction manufacturing efficiency and the increase of the equipment of manufacture.Therefore, the increase of manufacturing cost will not be caused.
It addition, the epitaxial silicon chip according to the present invention, ensure at least 2.5 × 10 by the oxygen concentration of the position by not including epitaxial film surface16atoms/cm3Above, it is possible in the heat treatment process of apparatus and process, fully suppress the stretching, extension of dislocation, even if oxygen concentration is less than 1.0 × 1017atoms/cm3It also is able to fully suppress the stretching, extension of dislocation.It should be noted that oxygen concentration is more high, more can increase the effect suppressing dislocation to stretch, but the rising of manufacturing cost can be caused, and impracticable.The epitaxial wafer of the present invention dislocation can be suppressed to stretch without the epitaxial silicon chip causing manufacturing cost increase as it has been described above, can provide.
It should be noted that for holding both the temperature in the parts (such as, the reaction vessel of epitaxial apparatus) of silicon chip when " temperature of epitaxial silicon chip " in the present invention includes the actual temperature of epitaxial silicon chip and make epitaxial film growth.
In the epitaxial silicon chip of the present invention, the oxygen concentration of aforementioned silicon chip is preferably 10 × 1017atoms/cm3Above and 18 × 1017atoms/cm3(ASTMF-121,1979) below.
Confirming: even if oxygen is from silicon chip to extension membrane diffusion, substrate oxygen concentration (oxygen concentration of silicon chip) is also basically unchanged before and after diffusion herein.
Epitaxial silicon chip according to the present invention, by using the silicon chip that substrate oxygen concentration is set to above-mentioned scope, it is possible to utilizes the straightforward procedure only controlling the rate of temperature fall that epitaxial growth processes to make the oxygen of the amount not occurring dislocation to stretch diffuse to epitaxial film.
It addition, the present inventor has carried out following experiment 2,3 based on the result of above-mentioned experiment 1.
<experiment 2>
Epitaxial film thickness is set as 2 μm, and the rate of temperature fall of substrate oxygen concentration and epitaxial process is set as the condition of table 2 below, in addition, utilize the condition identical with experiment 1 to carry out making and the stress load test of epitaxial silicon chip, measure the dislocation pit arrived at epitaxial film surface observation.Measurement result is shown in table 2.
[table 2]
<experiment 3>
Epitaxial film thickness is set as 4 μm, and the rate of temperature fall of substrate oxygen concentration and epitaxial process is set as the condition of table 3 below, in addition, utilize the condition identical with experiment 1 to carry out making and the stress load test of epitaxial silicon chip, measure the dislocation pit arrived at epitaxial film surface observation.Measurement result is shown in table 3.
[table 3]
As shown in table 1 ~ table 3 known: regardless of epitaxial film thickness, if substrate oxygen concentration is constant, then the rate of temperature fall of epitaxial process is more little, in other words more Slow cooling, then more can eliminate the stretching, extension of dislocation.
Although it addition, do not show that in table 2,3, but not having the top layer oxygen concentration of epitaxial silicon chip that dislocation stretches is 2.5 × 1016atoms/cm3Above.On the other hand, there is the top layer oxygen concentration of the epitaxial silicon chip that dislocation stretches less than 2.5 × 1016atoms/cm3。
And then, for the epitaxial silicon chip made when not having dislocation to stretch in experiment 2,3, it is simulated heat treatment and the stress load test of semiconductor equipment manufacturing process in the same manner as experiment 1.Its result is known: utilizing any condition to carry out heat treated epitaxial silicon chip does not have the stretching, extension of dislocation.
Thus, based on this result, have studied for each epitaxial film thickness and can calculate suitable rate of temperature fall.The relation that epitaxial film thickness is substrate oxygen concentration when 3 μm, 2 μm, 4 μm and rate of temperature fall is shown in Fig. 1, Fig. 2, Fig. 3.
Such as Fig. 1 ~ as shown in Figure 3, it does not have the curve of approximation of the condition that dislocation stretches becomes such curve is represented by dashed line.Epitaxial film thickness is set to X(μm), substrate oxygen concentration is set to Y(× 1017atoms/cm3(ASTMF-121,1979)), rate of temperature fall is set to Z(DEG C/min), the whole curve of approximation shown in Fig. 1 ~ Fig. 3 can use as following formula (1) expression.
Z=3.55×X-6.47×Y5.15... (1)
It can thus be appreciated that: by rate of temperature fall being set in above-mentioned formula (1) below the Z value obtained, it is possible to be made without the epitaxial silicon chip that dislocation stretches.
That is, in the manufacture method of the epitaxial silicon chip of the present invention, it is preferred that the thickness of aforementioned epitaxial film is set to X(μm), the oxygen concentration of aforementioned silicon chip is set to Y(× 1017atoms/cm3(ASTMF-121,1979)), aforementioned rate of temperature fall is set to Z(DEG C/min), aforementioned cooling process by meet such as following formula (2) in the way of carry out.
Z≤3.55×X-6.47×Y5.15... (2).
The manufacture method of the epitaxial silicon chip according to the present invention, the straightforward procedure obtaining rate of temperature fall is calculated, it is possible to manufacture and dislocation can be suppressed to stretch without the epitaxial silicon chip causing manufacturing cost increase by stating the oxygen concentration of the thickness and silicon chip that import epitaxial film in formula (2) only up.
Accompanying drawing explanation
Fig. 1 is the result of the experiment 1 implemented in order to the rate of temperature fall in the present invention is derived regulation formula, the schematic diagram of the substrate oxygen concentration that to be epitaxial film thickness be when 3 μm and the relation of rate of temperature fall.
Fig. 2 is the result of the experiment 2 implemented in order to aforementioned rate of temperature fall is derived regulation formula, the schematic diagram of the substrate oxygen concentration that to be epitaxial film thickness be when 2 μm and the relation of rate of temperature fall.
Fig. 3 is the result of the experiment 3 implemented in order to aforementioned rate of temperature fall is derived regulation formula, the schematic diagram of the substrate oxygen concentration that to be epitaxial film thickness be when 4 μm and the relation of rate of temperature fall.
Fig. 4 indicates that the flow chart of the manufacture method of the epitaxial silicon chip of an embodiment of the invention.
Fig. 5 indicates that the profile of the epitaxial silicon chip of an aforementioned embodiment.
Detailed description of the invention
[embodiment]
Hereinafter, it is explained with reference to embodiments of the present invention.
Fig. 4 indicates that the flow chart of the manufacture method of epitaxial silicon chip.Fig. 5 indicates that the profile of epitaxial silicon chip.
As shown in Figure 4, in the manufacture method of the epitaxial silicon chip 1 shown in Fig. 5, carry out silicon chip preparatory process (step S1).
This silicon chip preparatory process includes following whole operations: apply to cut krousky by CZ method, MCZ(magnetic field) method etc., for the single crystal rod lifted, utilize each necessary operation including section, chamfering, grinding, brushing, etching, grinding, cleaning etc., prepare the surface 21 silicon chip 2 through mirror ultrafinish.Now, the oxygen concentration of silicon chip 2 is preferably 10 × 1017atoms/cm3Above and 18 × 1017atoms/cm3(ASTMF-121,1979) below.
Then, carry out being formed at epitaxial film 3 the epitaxial film formation process of silicon chip 2.Epitaxial film formation process includes: heating process (step S2), epitaxial film growth operation (step S3) and cooling process (step S4).
In heating process, in the reaction vessel of not shown epitaxial apparatus, load silicon chip 2, make the temperature in reaction vessel from room temperature to target temperature.Target temperature is set in 1050 DEG C ~ 1280 DEG C.When temperature in reaction vessel reaches above-mentioned target temperature, carry out the epitaxial film growth operation making epitaxial film 3 grow on the surface 21 of silicon chip 2.
In this epitaxial film growth operation, the growth gasses such as trichlorosilane are imported in reaction vessel, this growth gasses atmosphere carries out the film forming of epitaxial film 3.It should be noted that in this film forming, it is also possible to add the alloy that boron, phosphorus etc. are necessary.
Epitaxial film growth operation carries out reaching more than 0.5 μm and less than 8.0 μm to the thickness T of epitaxial film 3.Further, when film forming to epitaxial film 3 reaches above-mentioned thickness T, carry out being reduced to the temperature of epitaxial silicon chip 1 from the temperature (above-mentioned target temperature (1050 DEG C ~ 1280 DEG C)) when making epitaxial film 3 grow the cooling process of room temperature.
In this cooling process, control the rate of temperature fall of epitaxial silicon chip 1, so that the oxygen concentration (top layer oxygen concentration) of the position on the surface 31 not including this epitaxial film 3 in epitaxial film 3 reaches 2.5 × 1016atoms/cm3Above.Specifically, the thickness T of epitaxial film 3 is set to X(μm), the oxygen concentration of silicon chip 2 is set to Y(× 1017atoms/cm3), rate of temperature fall is set to Z(DEG C/min), in the way of meeting above-mentioned formula (2), control rate of temperature fall.It should be noted that the top layer oxygen concentration of epitaxial film 3 refers to the oxygen concentration of the position that value is 0.5 μm ~ 1.0 μm of the depth dimensions D on distance epitaxial film 3 surface 31.
By controlling this rate of temperature fall, the diffusing capacity spread from silicon chip 2 to epitaxial film 3 is controlled, it is possible to the top layer oxygen concentration manufacturing epitaxial film 3 is adjusted to 2.5 × 1016atoms/cm3Above and less than 1.0 × 1017atoms/cm3Epitaxial silicon chip 1.
Further, for being simulated the heat treated epitaxial silicon chip 1 of semiconductor equipment manufacturing process of above-mentioned experiment 1 and not carrying out this heat treated epitaxial silicon chip 1, when carrying out the stress load test of above-mentioned experiment 1, can confirm that the stretching, extension not having dislocation.
[action effect of embodiment]
As it has been described above, above-mentioned embodiment can play action effect as following.
(1) straightforward procedure only controlling rate of temperature fall in cooling process is utilized, it is possible to manufacture the epitaxial silicon chip 1 that dislocation can be suppressed to stretch.It addition, without arranging the operation beyond epitaxial film formation process (heating process (step S2), epitaxial film growth operation (step S3), cooling process (step S4)), therefore, the reduction manufacturing efficiency and the increase of the equipment of manufacture will not be caused.Thus without the increase causing manufacturing cost.
(2) by stating the oxygen concentration of the middle thickness T importing epitaxial film 3 of formula (2) and silicon chip 2 only up and calculating the straightforward procedure obtaining rate of temperature fall, it is possible to manufacture can suppress dislocation to stretch without and cause the epitaxial silicon chip 1 that manufacturing cost increases.
[other embodiment]
It should be noted that the present invention is not only limited to above-mentioned embodiment, without departing from the scope of the subject in the invention, the change etc. of various improvement and design can be carried out.
That is, in cooling process, it is possible to set rate of temperature fall based on the experiment carried out under multiple conditions, and do not use the rate of temperature fall obtained based on above-mentioned formula (2), the top layer oxygen concentration can manufacture epitaxial film 3 is adjusted to 2.5 × 1016atoms/cm3Above and less than 1.0 × 1017atoms/cm3Epitaxial silicon chip 1.
It addition, in cooling process, by based on above-mentioned formula (2) or be not based on above-mentioned formula (2) and control rate of temperature fall, it is possible to the top layer oxygen concentration manufacturing epitaxial film 3 is adjusted to 1.0 × 1017atoms/cm3Above epitaxial silicon chip.Even if the epitaxial silicon chip so manufactured also is able to suppress the stretching, extension of dislocation.
And then, the oxygen concentration of silicon chip 2 can less than 10 × 1017atoms/cm3, it is also possible to more than 18 × 1017atoms/cm3。
Description of reference numerals
1 ... epitaxial silicon chip
2 ... silicon chip
3 ... epitaxial film
21 ... the surface of silicon chip
31 ... the surface of epitaxial film
Claims (4)
1. epitaxial silicon chip, it is the epitaxial silicon chip having epitaxial film in the surface configuration of silicon chip, it is characterised in that
The oxygen concentration of the position on the surface not including this epitaxial film in described epitaxial film is 2.5 × 1016atoms/cm3(ASTMF-121,1979) more than and less than 1.0 × 1017atoms/cm3。
2. epitaxial silicon chip according to claim 1, it is characterised in that the oxygen concentration of described silicon chip is 10 × 1017atoms/cm3Above and 18 × 1017atoms/cm3(ASTMF-121,1979) below.
3. the manufacture method of epitaxial silicon chip, it is the manufacture method of epitaxial silicon chip having epitaxial film in the surface configuration of silicon chip, it is characterised in that possess following operation:
Make described epitaxial film in the epontic epitaxial film growth operation of described silicon chip and
By the temperature of described epitaxial silicon chip from the cooling process making temperature during described epitaxial film growth begin to decline,
Described cooling process controls the rate of temperature fall of described epitaxial silicon chip, so that the oxygen concentration of the position on the surface not including this epitaxial film in described epitaxial film reaches 2.5 × 1016atoms/cm3(ASTMF-121,1979) more than.
4. the manufacture method of epitaxial silicon chip according to claim 3, it is characterised in that
The thickness of described epitaxial film is set to X(μm),
The oxygen concentration of described silicon chip is set to Y(× 1017atoms/cm3(ASTMF-121,1979)),
Described rate of temperature fall is set to Z(DEG C/min),
Described cooling process by meet such as following formula (1) in the way of carry out,
Z≤3.55×X-6.47×Y5.15... (1).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013244056A JP6131842B2 (en) | 2013-11-26 | 2013-11-26 | Epitaxial silicon wafer manufacturing method |
| JP2013-244056 | 2013-11-26 | ||
| PCT/JP2014/074180 WO2015079777A1 (en) | 2013-11-26 | 2014-09-12 | Epitaxial silicon wafer and epitaxial silicon wafer manufacturing method |
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| CN105723497B CN105723497B (en) | 2018-09-14 |
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| JPH11150119A (en) * | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | Method and device for heat-treating silicon semiconductor substance |
| CN100461349C (en) * | 2003-10-21 | 2009-02-11 | 株式会社上睦可 | Process for producing high resistance silicon wafer, and process for producing epitaxial wafer and SOI wafer |
| JP5276863B2 (en) * | 2008-03-21 | 2013-08-28 | グローバルウェーハズ・ジャパン株式会社 | Silicon wafer |
| JP5704155B2 (en) * | 2012-12-19 | 2015-04-22 | 株式会社Sumco | Epitaxial wafer manufacturing method |
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| CN1251206A (en) * | 1997-02-26 | 2000-04-19 | Memc电子材料有限公司 | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| JPH11145147A (en) * | 1997-11-11 | 1999-05-28 | Nec Corp | Semiconductor device and its manufacture |
| JP2002012496A (en) * | 1999-10-19 | 2002-01-15 | Shin Etsu Handotai Co Ltd | Silicon epitaxial wafer and method for producing the same |
| JP2013219300A (en) * | 2012-04-12 | 2013-10-24 | Shin Etsu Handotai Co Ltd | Epitaxial wafer and manufacturing method of the same |
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| Publication number | Publication date |
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| TWI533356B (en) | 2016-05-11 |
| CN105723497B (en) | 2018-09-14 |
| WO2015079777A1 (en) | 2015-06-04 |
| JP2015103703A (en) | 2015-06-04 |
| JP6131842B2 (en) | 2017-05-24 |
| TW201521090A (en) | 2015-06-01 |
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