TW201513750A - 零件內建基板及其製造方法 - Google Patents

零件內建基板及其製造方法 Download PDF

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Publication number
TW201513750A
TW201513750A TW103111184A TW103111184A TW201513750A TW 201513750 A TW201513750 A TW 201513750A TW 103111184 A TW103111184 A TW 103111184A TW 103111184 A TW103111184 A TW 103111184A TW 201513750 A TW201513750 A TW 201513750A
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Taiwan
Prior art keywords
component
layer
metal layer
area
built
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Application number
TW103111184A
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English (en)
Inventor
Mitsuaki Toda
Tohru Matsumoto
Ryoichi Shimizu
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Meiko Electronics Co Ltd
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Publication date
Application filed by Meiko Electronics Co Ltd filed Critical Meiko Electronics Co Ltd
Publication of TW201513750A publication Critical patent/TW201513750A/zh

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Abstract

零件內建基板(1)，具有絕緣層(3)、夾住上述絕緣層(3)形成的第1金屬層(4)及第2金屬層(5)、埋設在上述絕緣層(3)內的同時不形成連接端子(2a)的連接端子非形成面(2c)位於接近上述第1金屬層(4)側之零件(2)、位於上述零件(2)的上述連接端子非形成面(2c)上之接合層(6)、以及電氣連接上述第2金屬層(5)與上述零件(2)的上述連接端子(2a)之導通孔(7)；上述接合層(6)與上述零件(2)接觸面側的面積，比上述零件(2)的連接端子非形成面(2c)的面積小。

Description

零件內建基板及其製造方法
本發明係關於內建電氣或電子零件的零件內建基板及其製造方法。
一直以來，進行用以加強各種的電氣．電子機器的小型化、薄型化、輕量化以及多功能化的研究開發。特別是行動電話、筆記型電腦、數位相機等的民生用品，雖然力求多功能化，但也強力要求小型化、薄型化及輕量化。又，各種電氣．電子機器中，也力求傳送信號的高頻化及高速化，也要求防止伴隨的信號雜訊增大。
為了實現如此的要求，作為納入電氣．電子機器的電路基板，習知具有基板表面上裝配的各種電氣．電子零件內建在基板絕緣層的絕緣基材內的構造之零件內建基板、層壓上述零件內建基板形成的零件內建多層電路基板的研究開發及製造係一直以來進行的。例如，專利文件1中，揭示零件內建基板及其製造方法。
專利文件1中揭示的零件內建基板的製造方法中，支持體上形成銅箔構成的導電薄膜層，在上述導電薄膜層上塗佈接合劑。接著，經由上述接合劑進行內建電氣或電子零件(內建零件)的裝配，之後形成絕緣層(絕緣基材)覆蓋上述內 建零件。經過如此的製造步驟形成的零件內建基板，基板本體厚度變得比習知薄，還可以內建比基板表面上裝配更多的電氣．電子零件，可以用於各種用途的電氣．電子機器。
又，內建零件，使用一般金屬氧化半導體的場效型電晶體(MOSFET：金屬-氧化-半導體場效電晶體)或積體電路(IC：積體電路)等的IC零件時，必須形成從埋設上述內建零件的絕緣層的外部到達上述內建零件之導通孔。上述導通孔貫通在絕緣層的兩面形成的金屬層、以及用以黏合內建零件至上述金屬層的絕緣材料構成的接合劑的同時，從絕緣層的外部電氣連接上述內建零件的連接端子，在絕緣層內延伸。
[先行技術文件] [專利文件]
[專利文件1]日本專利第4874305號公報
近年來，因為各式各樣種類的電氣．電子機器存在，根據上述電氣．電子機器的種類，進行各式各樣種類的零件內建基板的開發。例如，開發絕緣層內埋設複數的IC零件之零件內建基板、及絕緣層內埋設一個IC零件之零件內建基板。在此，只埋設一個IC零件時，要加強零件內建基板的小型化的話，必須縮小絕緣層使零件內建基板的大部分為IC零件。於是，要確實黏合上述IC零件至金屬層的話，與IC零件的裝配面積相同或接合層的形成面積變大。
不過，接合層的形成面積變大時，金屬層形成後 真空加熱步驟中對接合層施加的壓力變大，對構成絕緣層的絕緣材料由於硬化收縮往上述壓力的不同方向施加應力，金屬層從支持體剝離。由於如此的金屬層剝離，金屬層中引起皺摺，零件內建基板本體缺乏可靠性。
在此，雖然也考慮藉由縮小接合層的形成面積， 可以抑制上述皺摺產生，但特性不同的接合層及絕緣層位於導通孔形成的區域中，由於導通孔形成時蝕刻率不同，各層的構成材料殘存，存在導致導通孔連接不良的問題。
本發明有鑑於如此的課題而形成，其目的在於提 供位於絕緣層上的金屬層不剝離，且導通孔不發生連接不良的零件內建基板及其製造方法。
為了達成上述目的，本發明的零件內建基板，具有絕緣層，以絕緣材料構成；第1金屬層及第2金屬層，夾住上述絕緣層而形成；電氣或電子零件，埋設在上述絕緣層內的同時，不形成連接端子的連接端子非形成面位於接近上述第1金屬層側；接合層，埋設在上述絕緣層內的同時，位於上述零件的上述連接端子非形成面上；以及導通孔，在上述絕緣層內延伸，電氣連接上述第2金屬層與上述零件的上述連接端子；其中，上述接合層與上述零件接觸面側的面積，比上述零件的連接端子非形成面的面積小。
上述的零件內建基板中，上述接合層與上述零件接觸面側的面積，最好在上述零件的連接端子非形成面面積的 13%~40%的範圍內。
任一上述零件內建基板中，上述接合層與上述零件接觸面側的面積，最好在上述第1金屬層的形成面側中的上述零件內建基板面積的7%~25%的範圍內。
任一上述零件內建基板中，上述接合層的平面形狀，最好是圓形。
又，為了達成上述目的，本發明的零件內建基板的製造方法，包括準備步驟，準備在表面上形成第1金屬層的支持板；裝載步驟，在上述第1金屬層的表面上經由接合層，不形成連接端子的連接端子非形成面位於接近上述第1金屬層側，裝載電氣或電子零件；絕緣層形成步驟，層壓絕緣材料以覆蓋上述第1金屬層及上述零件，形成埋設上述零件的絕緣層；金屬層形成步驟，在上述絕緣層上形成第2金屬層；以及導通孔形成步驟，電氣連接上述第2金屬層與上述零件的上述連接端子，形成上述絕緣層內延伸的導通孔；其中，上述裝載步驟中，上述接合層與上述零件接觸面側之面積比上述零件的連接端子非形成面之面積小。
上述零件內建基板的製造方法中的上述裝載步驟中，上述接合層與上述零件接觸面側的面積，最好為上述零件的連接端子非形成面面積的13%~40%。
任一上述零件內建基板的製造方法中的上述裝載步驟中，上述接合層與上述零件接觸面側的面積，最好為上述第1金屬層的形成面側中的上述零件內建基板面積的7%~25%。
任一上述零件內建基板的製造方法中的上述裝載步驟中，最好上述接合層的平面形狀為圓形地形成上述接合層。
根據本發明的零件內建基板及其製造方法中，因為配置零件的連接端子非形成面接近第1金屬層，使接合層的形成面積比零件的連接端子非形成面的面積小，可以防止從第1金屬層的絕緣層剝離及導通孔的連接不良。
根據本發明的零件內建基板及其其製造方法中，因為使接合層的平面形狀為圓形，接合層形成時接合層內不產生氣泡及空隙等，可以堅固黏合零件。
1‧‧‧零件內建基板
2‧‧‧IC零件
2a‧‧‧連接端子
2b‧‧‧第1面
2c‧‧‧第2面
3‧‧‧絕緣層
4‧‧‧第1金屬層
5‧‧‧第2金屬層
6‧‧‧接合層
7‧‧‧導通孔
11‧‧‧支持板
12‧‧‧導孔
20‧‧‧零件內建基板
[第1圖]係根據本發明的實施例的零件內建基板的概略剖面圖；[第2圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖；[第3圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖；[第4圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖；[第5圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖；[第6圖]係根據本發明的實施例的零件內建基板的製造 方法之各製造步驟中的概略剖面圖；以及[第7圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖。
以下，參照圖面，關於本發明的實施例，根據實施例，詳細說明。又，本發明並非限定於以下說明的內容，在不變更主旨的範圍內可以任意變更實施。又，用於說明實施例的圖面，都是模式顯示根據本發明的零件內建基板及其構成構件，為了深入理解進行部分強調、放大、縮小或省略，有時不會正確顯示零件內建基板及其構成構件的縮尺或形狀等。又，實施例中使用的各種數值都是顯示一範例，根據需要可以做各種變更。
<實施例>
首先，一邊參照第1圖，一邊詳細說明關於本發明實施例的零件內建基板的構造。在此，第1圖係根據實施例的零件內建基板的剖面圖。
如第1圖所示，根據本實施例的零件內建基板1，具有一般的電氣或電子零件的IC零件2、埋設IC零件2而形成的絕緣層3、夾住絕緣層3而形成的第1金屬層4及第2金屬層5、用以黏合IC零件2至第1金屬層4上的接合層6、以及在絕緣層3內延伸電氣連接第2金屬層5與IC零件2的導通孔7。又，根據本實施例的零件內建基板1的尺寸，約4mm(毫米)角，厚度約0.4mm。
IC零件2，在第1面2b(連接端子形成面)側具有連接端子2a，電氣連接IC零件2的內部與外部，用以引導外部供給的電力、電流、電壓、或電氣信號至IC零件2的內部。又，IC零件2中，在相對於第1面2b位於相反側的第2面2c，不形成連接端子2a。即，第2面2c成為連接端子非形成面。又，如第1圖所示，IC零件2，在接近第1金屬層4側，不形成連接端子的第2面2c所在位置，埋設在絕緣層3內。即，本實施例中，IC零件2以所謂的面朝上狀態埋設。於是，本實施例中的IC零件2的尺寸，約3.4mm(毫米)角，厚度約0.2mm。
又，本實施例中，以零件內建基板1中內建的零件作為IC零件2，但零件內建基板1中內建的零件不限定於此。例如，埋設電阻、電容器等其他的電氣或電子零件在絕緣層3內也可以。
本實施例中，對於絕緣層3，使用膠片等的絕緣樹脂材料。在此，絕緣層3的材料，最好膨脹係數接近IC零件2。這是因為，上述絕緣材料硬化之際，緩和對IC零件2的應力。又，絕緣層3的材料，不限定於絕緣樹脂材料，可以埋設IC零件2且沒有電氣特性及可靠性等的問題的話，使用其他一般的絕緣材料也可以。
第1金屬層4，在絕緣層3的表面上且在接近IC零件2的第2面2c的面上形成。本實施例中，第1金屬層4，由銅所構成。又，對第1金屬層4，施行圖案化，形成所希望的配線圖案。又，第1金屬層4的材料，不限定為銅，沒有電氣特性及可靠性等的問題的話，使用其他一般的金屬材料也可 以。
第2金屬層5，在絕緣層3的表面上且在位於接近 IC零件2的第2面2c的面之相反側的面上形成。本實施例中，第2金屬層5，與第1金屬層4相同，由銅所構成。又，對第2金屬層5，也施行圖案化，形成所希望的配線圖案。又，第1金屬層4的材料，不限定為銅，沒有電氣特性及可靠性等的問題的話，使用其他一般的金屬材料也可以。
本實施例中，對於接合層6，使用一般絕緣材料構 成的接合劑。如第1圖所示，接合層6，在IC零件2的第2面2c上形成，並且與第1金屬層4接觸。
又，接合層6，收納在IC零件2的第2面2c內而 形成。即，接合層6與IC零件2接觸面側的面積(接合劑的塗佈面積)，變得比IC零件2的第2面2c的面積小。更具體而言，接合層6與IC零件2接觸面側的面積，最好在IC零件2的第2面2c的面積之13%~40%的範圍內。本實施例中，接合劑的塗佈尺寸約Φ1.5mm，而接合層6與IC零件2接觸面側的面積(約1.77mm2(平方毫米))係IC零件2的第2面2c(約11.56mm2)的面積的約15%。又，本實施例中，接合劑的塗佈尺寸為約Φ1.5mm，平面形狀形成圓狀的接合層6，但接合層的平面形狀不限定為圓形，也可以是多角形或橢圓。
又，與零件內建基板1本體相比較的話，接合層6 與IC零件2接觸面側的面積，最好在第1金屬層4的形成面側中零件內建基板1的面積的7%~25%的範圍內。本實施例中，接合層6與IC零件2接觸面側的面積，為第1金屬層4 的形成面側中零件內建基板1的面積(約16mm2)的約10%。
根據上述形成接合層6，IC零件2的第2面2c的 大部分，由絕緣層3覆蓋。於是，接合層6的周圍也是絕緣層3所在位置。即，接合層6也成為埋設在絕緣層3內的狀態。
導通孔7，為了電氣連接IC零件2的各連接端子 2與第2金屬層5，設置為在絕緣層3內延伸。導通孔7的材料，使用銅等的導電體。又，導通孔7的材料，不限定為銅，沒有電氣特性及可靠性等的問題的話，使用其他一般的金屬材料也可以。
其次，關於本發明的實施例的零件內建基板的製 造方法，參照第2~7圖，詳細說明。第2~7圖係根據本實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖。
首先，如第2圖所示，進行準備支持板11的準備 步驟。具體而言，在具有剛性的支持板11上形成第1金屬層4，準備表面以第1金屬層4覆蓋的支持板11。支持板11，使用具有製程條件必需程度的剛性。例如，支持板11，以具有剛性的SUS(不銹鋼)板或鋁板等形成也可以。如上述，本實施例中，雖然第1金屬層4由銅構成，但第1金屬層4的具體形成方法，可以採用例如支持板11以SUS構成的話，析出電鍍銅形成第1金屬層4的方法，或支持板11是鋁板的話，貼上銅箔形成第1金屬層4的方法。
其次，如第3圖所示，例如以配料機或印刷等在 第1金屬層4上形成由絕緣材料構成的接合層6。第3圖中，雖然在第1金屬層4的2處形成接合層6，但本實施例的零件 內建基板的製造方法中，因為複數同時形成埋設1個IC零件2的零件內建基板1，實際上形成矩陣狀複數的接合層6。因此，根據零件內建基板1的製造數量，決定IC零件2的數量，對應上述IC零件的數量，形成接合層6。
在此，本實施例中，構成接合層6的接合劑的塗 佈尺寸約Φ1.5mm，接合層6與IC零件2的接觸面側的面積為IC零件2的第2面2c的面積的約15%，為第1金屬層4的形成面側中的零件內建基板1的面積的約10%。
其次，如第4圖所示，經由接合層6在第1金屬 層4上進行裝載IC零件2的裝載步驟。具體而言，使用具有吸引噴嘴的表面裝配機(晶片安裝器)，在接合層6上裝配內建零件的IC零件2。在此，裝載IC零件2，不形成連接端子2a的第2面2c與接合層6接合，形成連接端子2a的第1面2b與接合層6間離。即，IC零件2，以所謂的面朝上裝載。
其次，如第5圖所示，進行形成絕緣層3的絕緣 層形成步驟。上述絕緣層形成步驟中，覆蓋IC零件2、第1金屬層4及接合層6，(即，對IC零件2、第1金屬層4及接合層6)層壓應形成絕緣層3的絕緣樹脂材料，埋設IC零件2及接合層6在絕緣層3內。具體而言，對IC零件2及接合層6堆疊膠片等的絕緣樹脂材料，在真空下一邊加熱，一邊進行加壓。此加壓，例如使用真空加壓式的加壓機進行。又，絕緣層3形成之際，第1金屬層4所在位置的面的相反側的表面上，形成另外的第2金屬層5。根據如此的金屬層形成步驟，以第1金屬層4與第2金屬層5夾住絕緣層3。
在此，本實施例中，因為構成接合層6的接合劑 的塗佈尺寸為約Φ1.5mm，而接合層6與IC零件2接觸面側的面積為IC零件2的第2面2c約15%的面積，為第1金屬層4的形成面側中的零件內建基板1約10%的面積，絕緣層3覆蓋IC零件2的第2面2c的大部分。因此，堆疊的膠片等的絕緣樹脂材料在真空加熱之際，往第1金屬層4對接合層6施加的壓力比較小。又，經由上述真空加熱處理，位於接合層6周圍的絕緣樹脂材料中伴隨硬化收縮的應力，因為向第2金屬層5的形成面側施加，上述壓力與上述應力互相抵消。因此，抑制第1金屬層4從支持板11剝離。
又，相對於IC零件2的第2面2c的面積或第1 金屬層4的形成面側中零件內建基板1的面積，接合層6與IC零件2接觸面側的面積的比率，不限定於上述數值。特別是，接合層6與IC零件2接觸面側的面積，為IC零件2的第2面2c的面積的13%~40%的範圍內，為第1金屬層4的形成面側中零件內建基板1的面積的7%~25%的範圍內，藉此可以充分達到上述的效果。
於是，本實施例中，構成接合層6的接合劑的塗 佈尺寸約為Φ1.5mm，接合層6的平面形狀為圓形。藉此，接合劑確實溶融，接合層6內不形成氣泡(空洞)或空隙。因此，可以堅固黏合IC零件2至第1金屬層4上。
其次，如第6圖所示，除去支持板11的同時，形 成導孔12。導孔12的形成方法，首先除去支持板11，之後，例如以CO2雷射照射導孔形成處，除去CO2雷射照射部分的構 材，形成各導孔。又，不限於CO2雷射，使用例如UV-YAG或準分子等的高頻雷射也可以。在此，導孔12，貫通第2金屬層5的同時，在絕緣層3內延伸到達連接端子2a。
導孔12形成後，施行除膠處理，除去導孔形成之 際殘留的樹脂。又，對連接端子2a更施行微蝕(Soft etching)處理，除去由於導孔形成而露出的連接端子2a的露出面的氧化物或有機物。因此，新鮮的金屬表面露出，與之後電鍍處理中析出的金屬之間的密合性提高，結果電氣連接可靠性提高。
在此，形成導孔12的連接端子2a的周圍，正因 為只存在絕緣樹脂材料構成的絕緣層3，具有互不相同特性的絕緣樹脂材料不存在。因此，對於具有互不相同特性的絕緣樹脂材料，形成導孔時產生起因於蝕刻率不同的絕緣樹脂材料的殘存，不會在本實施例中形成導孔12之際因執行的蝕刻處理而產生。因此，最終完成的零件內建基板1，不會發生導通孔7的連接不良，具有優異的電氣特性及可靠性。
其次，如第7圖所示，導孔12內填充導電體，隨 著形成導通孔7，進行第1金屬層4及第2金屬層5的圖案化。 具體而言，對導孔12施行除膠或半蝕刻處理，再施行化學鍍銅或電鍍銅等的電鍍處理後，導孔12內析出電鍍再填充導電體形成導通孔7。又，對配置於絕緣層3的兩面的第1金屬層4及第2金屬層5，施行蝕刻處理。
於是，第7圖中沿著虛線VII-VII切斷絕緣層3， 藉此形成個片化的複數的零件內建基板20。絕緣層3的切斷，藉由使用一般切割裝置的個片化製程施行。
如上述，關於本實施例的零件內建基板1及其製造方法，特徵在於IC零件2的連接端子非形成面之第2面2c接近第1金屬層4配置，使成為接合層6的接合劑的塗佈面積比IC零件2的第2面2c的面積小。根據如此的構成，根據本實施例的零件內建基板1，位於絕緣層3表面上的第1金屬層4不會剝離，而且不會發生導通孔7的連接不良。
1‧‧‧零件內建基板
2‧‧‧IC零件
2a‧‧‧連接端子
2b‧‧‧第1面
2c‧‧‧第2面
3‧‧‧絕緣層
4‧‧‧第1金屬層
5‧‧‧第2金屬層
6‧‧‧接合層
7‧‧‧導通孔

Claims (8)

  1. 一種零件內建基板，包括：絕緣層，以絕緣材料構成；第1金屬層及第2金屬層，夾住上述絕緣層而形成；電氣或電子零件，埋設在上述絕緣層內的同時，不形成連接端子的連接端子非形成面位於接近上述第1金屬層側；接合層，埋設在上述絕緣層內的同時，位於上述零件的上述連接端子非形成面上；以及導通孔，在上述絕緣層內延伸，電氣連接上述第2金屬層與上述零件的上述連接端子；其中，上述接合層與上述零件接觸面側的面積，比上述零件的連接端子非形成面的面積小。
  2. 如申請專利範圍第1項所述的零件內建基板，其中，上述接合層與上述零件接觸面側的面積，係上述零件的連接端子非形成面面積的13%~40%。
  3. 如申請專利範圍第1或2項所述的零件內建基板，其中，上述接合層與上述零件接觸面側的面積，係上述第1金屬層的形成面側中上述零件內建基板面積的7%~25%。
  4. 如申請專利範圍第1至3項中任一項所述的零件內建基板，其中，上述接合層的平面形狀係圓形。
  5. 一種零件內建基板的製造方法，包括下列步驟：準備步驟，準備在表面上形成第1金屬層的支持板；裝載步驟，在上述第1金屬層的表面上經由接合層，不形成連接端子的連接端子非形成面位於接近上述第1金屬層 側，裝載電氣或電子零件；絕緣層形成步驟，層壓絕緣材料以覆蓋上述第1金屬層及上述零件，形成埋設上述零件的絕緣層；金屬層形成步驟，在上述絕緣層上形成第2金屬層；以及導通孔形成步驟，電氣連接上述第2金屬層與上述零件的上述連接端子，形成上述絕緣層內延伸的導通孔；其中，上述裝載步驟中，上述接合層與上述零件接觸面側之面積比上述零件的連接端子非形成面之面積小。
  6. 如申請專利範圍第5項所述的零件內建基板的製造方法，其中，上述裝載步驟中，上述接合層與上述零件接觸面側的面積，係上述零件的連接端子非形成面面積的13%~40%。
  7. 如申請專利範圍第5或6項所述的零件內建基板的製造方法，其中，上述裝載步驟中，上述接合層與上述零件接觸面側的面積，係上述第1金屬層的形成面側中零件內建基板面積的7%~25%。
  8. 如申請專利範圍第5至7項中任一項所述的零件內建基板的製造方法，其中，上述裝載步驟中，上述接合層的平面形狀為圓形地形成上述接合層。
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