TW201123250A - Field emission cathode structure and display using the same - Google Patents

Field emission cathode structure and display using the same Download PDF

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TW201123250A
TW201123250A TW98145703A TW98145703A TW201123250A TW 201123250 A TW201123250 A TW 201123250A TW 98145703 A TW98145703 A TW 98145703A TW 98145703 A TW98145703 A TW 98145703A TW 201123250 A TW201123250 A TW 201123250A
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Taiwan
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field emission
cathode
emission cathode
cathode structure
nanocarbon
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TW98145703A
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Chinese (zh)
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TWI393160B (en
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Hai-Yan Hao
Peng Liu
Jie Tang
Yang Wei
Liang Liu
Kai-Li Jiang
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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Abstract

The present invention relates to a field emission cathode structure. The field emission cathode structure includes a substrate, a plurality of cathode electrodes, a plurality of grid electrodes and a plurality of emits. The substrate includes a plurality of opens and has a first surface and a second surface opposite to the first surface. The plurality of cathode electrodes are parallel and located on the first surface. The plurality of grid electrodes are parallel and located on the second surface. The cathode electrode crosses the grid electrodes. Each emit is located corresponding to an open and includes at least one carbon nanotube wire. The carbon nanotube wire has a first portion located between the substrate and the cathode electrode and a second portion located in the open. A display using the field emission cathode structure is also provided.

Description

201123250 六、 [0001] [0002] [0003] [0004] 098145703 發明說明: 【發明所屬之技術領域】 本發明涉及一種基於奈米碳管的場發射陰極結構及使用 該場發射陰極結構的顯示器。 【先前技術】 場發射顯示器係繼陰極射線管(CRT)顯示器和液晶顯示器 (LCD)之後,最具發展潛力的下一代新興技術。相對於先 前的顯示器’場發射顯示器具有顯示效果好、視角大、 功耗小及體積小等優點,尤其為基於奈米碳管的場發射 顯示器,近年來越來越受到重裸》 %發射陰極結構係場發射顯示器的重要元件。基於奈米 碳管的場發射陰極結構通常包括一絕緣基底;複數個陰 極電極,該複數個陰極電極位於該絕緣基底上且沿同一 方向平行間隔絕緣設置;複數個電子發射單元,該複數 個電子發射單元均勻分佈於複數個陰極電極上,與該陰 極電極電連接,每個電子發射單元包括複數個奈米碳管 ’一介質層’該介質層設置於所述絕緣基底上,並對應 電子發射單元設有通孔,該電子發射單元設置於該通孔 内,複數個柵極,該栅極設置於所述介質層上,與所述 陰極電極異面垂直設置。 通常’電子發射單元為採用化學氣相沈積法製備的奈米 碳管陣列。然而,採用化學氣相沈積法製備的奈米碳管 陣列與陰極電極的結合力較差,奈米碳管陣列中的奈米 碳官在發射電子時容易被強電場拔出從而會限制該場 發射陰極結構的電子發射能力和壽命。 表單編號A0101 第4頁/共25頁 201123250 【發明内容】 [0005] 有鑒於此,提供〆種奈米碳管與陰極電極可牢圊結合的 場發射陰極結構及使用該場發射陰極結構的顯系器實為 « 必要。 [0006] —種場發射陰極結構,其包括:一絕緣基板,該絕緣基 板上形成有複數個開孔,且該絕緣基板具有第〆表面及 與該第一表面相對的第二表面,每個開孔貫穿絕緣基板 ’從第一表面延伸至第二表面;複數個陰極電糨’該複 數個陰極電極平行設置於所述絕緣基板的第〆表面’複 數個柵極電極,該複數個栅極電極平行設置於所述絕緣 基板的第二表面,且該複數個柵極電極與所述複數個陰 極電極異面交叉設置;及複數個電子.發射單元,該複數 個電子發射單元分別與一開孔對應設置,且與所述陰極 電極電連接;其中’所述電子發射單元包括至少/根奈 米碳管線狀結構,該奈米碳管線狀結構的一部分固定於 所述絕緣基板與所述陰極電極之間,一部分設置於開孔 内。 [0007] —種顯示器,其包括:一陰極基板,—陽極基板,一場 發射陰極結構及一陽極結構,所述場發射陰極結構包括 .一絕緣基板,該絕緣基板上形成有複數個開孔,且該 絕緣基板具有第一表面及與該第一表面相對的第二表面 ,每個開孔貫穿絕緣基板,從第一表面延伸至第二表面 :複數個陰極電極,該複數個陰極電極平行設置於所述 絕緣基板的第-表面;複數個柵極電極,該複數個栅極 電極平行設置於所賴緣基板的第二表面,且該複數個 098145703 表單編號A0101 第5頁/共25頁 0982078013-0 201123250 [0008] [0009] [0010] [0011] 098145703 Γ電極與所述複數個陰極電極異面交叉設置,·及複數 =子發射單元,該複數個電子發射單元分別與一開孔 史置,且與所述陰極電極電連接;其卜所述電子 發射早I包括至少—根奈米碳管線狀結構,該奈米碳管 線狀結構的—部分固定於所述絕緣基板與所述陰極電極 之間’一部分設置於開孔内。 與先和技術相比’由於本發明提供的場發射陰極結構及 顯示器中的奈米碳管線狀結構的—部分固定於絕緣基板 與陰極②極之間’故m碳管線狀結構被牢固地固 定於絕緣基板與陰極電極痛,可承受較大的電場力而 不會被電場力拔出,從而使該奈米碳管線狀結構具有更 強的電子發射能力和更長的使用壽命。 【實施方式】 以下將結合關料說明本發明實_提供的場發射陰 極結構及使用該場發射陰極結構的顯示器。本發明的場 發射陰極結構可應用至二蟬型場發射顯示器'三極型場 發射顯不器等’以下以三極型場發射顯示器為例進行說 明。 請參閱圖1至圖2,本發明實施例提供一種場發射陰極結 構1〇〇,該場發射陰極結構100包括一絕緣基板11()、複 數個陰極電極120、複數個柵極電極13〇及複數個電子發 射單元140。 其中,所述絕緣基板110上形成有複數個開孔11〇2,且每 個電子發射單元140與一開孔U02對應設置。所述絕緣基 板具有第一表面11〇6及與該第—表面11〇6相對的第二 表單編號A0101 第6頁/共25頁 0982078013-0 201123250 面1104。每個開孔1102貫穿絕緣基板110,從第一表面 11 06L伸至第二表面11 。所述複數個柵極電極1設 置於絕緣基板110的第二表面1104。所述複數個陰極電極 0 X置於絕緣基板的第一表面1106。所述陰極電極 0與柵極電極130均為條形電極。所述複數個陰極電極 120平行設置’所述複數個柵極電極130平行設置,且陰 極電極120與栅極電極130異面垂直設置。所述電子發射 單兀140與陰極電極12〇電連接。由於陰極電極12〇與柵 極電極130異面垂直設置,故,可通過控制陰極電極12〇 與柵極電極13〇來控制每個電子發射單先140進行獨立發 射電子。 [0012] ❹ 所述絕緣基板1丨〇的材料可為玻璃、陶瓷、塑膠或聚合物 。所述絕緣基板110的形狀與厚度不限,可根據實際需要 製備。優選地,所述絕緣基板110的形狀為正方形或矩形 ,厚度大於等於15微米。所述絕緣基板110上的複數個開 孔1102呈陣列排列,且每個開孔1102的直徑可為3微米 至1 000微米。本實施例中,所述絕緣基板11〇為一邊長為 50毫米,厚度為1毫米的正方形耐高溫高分子基板。所述 高分子基板上形成有10x10個(共10行,每行10個)直 徑為2毫米的開孔11 0 2。 [0013] 所述陰極電極120的材料可為銅、鋁、金、銀等金屬或導 電漿料等。本實施例中,所述陰極電極120為一條形銅片 。可以理解,當所述陰極電極120的材料為導電漿料時, 開孔1102的直徑應小於500微米,以便印刷導電漿料時, 導電漿料可因毛細現象而於開孔1102上形成一層導電膜 098145703 表單編號A0101 第7頁/共25頁 0982078013-0 201123250 [0014] [0015] 所述柵極電極130的材料可為銅、鋁、金、銀等金屬或導 電漿料等。所述栅極電極丨3〇上形成有一排栅孔(圖未標 )。所述栅孔為通孔,柵孔的直徑為1微米至1〇〇〇微米。 所述柵極電極130設置於絕緣基板11〇的第二表面11〇4上 ,且柵極電極130的柵孔與絕緣基板丨1()的開孔丨1〇2相對 應6又置,以使電子發射單元14〇發射的電子可通過該栅孔 射出。§本發明的場發射陰極結構丨〇〇應用至二極型場發 射顯示器時,可沒有所述栅極電極13〇^本實施例中所 述栅極電極130為導電漿料印製的條形電極,且柵孔的直 fe為2 0微米。 所述電子發射單TC14G包括至少—根奈米碳管線狀結構。 料不米兔官線狀結構卩包括至少一個奈米碳管線。^ 奈米碳管線狀結構包括複數個奈㈣管線時,複數㈣ 米碳管線平行排舰成束_構雜油奈米碳管助 互扭轉組成絞線結構1述奈米碳管線包括複數個沿夺 米碳管線㈣定向㈣的奈米碳管。所述奈米碳管線^ 為非扭轉的奈米碳管線或扭轉的奈米碳管線。該非扭朝 的不来碳s線為官拉膜通過有機溶劑處理得虽I 。該非扭轉的奈米碳管線包括複數個沿奈米碳管線㈣ 排列的奈米碳管,即奈米碳管的轴向與奈米碳管線的, 向基本平行。該扭轉的奈米碳管線為採用一機械鳩 述奈米碳管拉膜兩端沿相反方向扭轉獲得。該扭轉㈣ 米破管=括複數個繞奈来碳管_向螺旋排列的夺并 碳管,即不米碳管的軸向沿奈米碳管線的軸向螺_ 098145703 表單編號A0101 第8頁/共25 頁 09820 201123250 Ο [0016] ° s亥非扭轉的奈米碳管線與扭轉的奈米碳管線長度不限 ’直徑為0. 5奈米〜1〇〇微米。該奈米碳管線中的奈米碳管 為單壁、雙壁或多壁奈米碳管。該奈米碳管的直徑小於5 奈米’長度範圍為10微米〜100微米。所述奈米碳管線及 其製備方法具體請參見本申請人於於2002年11月5日申請 的’於2008年11月21日公告的第1303239號台灣公告專 利“一種奈米碳管繩及其製造方法,,,及於於2005年12 月16日申請的,於2〇〇7年7月1日公開的第TW200724486 號台灣公開專利申請“奈米碳管絲戽其製作方法,,。為 節省篇幅’僅引用於秦,但上述申請所有技術揭露也應 '........... ... ... 視為本發明申請技術揭露的一部分。 Ο 所述奈米碳管線狀結構1402_折形成一第一部分1404及 與該第一部分1404相連的第二部分1406 〇所述奈米碳管 線狀結構1402的第一部分1404固定於所述絕緣基板11〇 與所述陰極電極120之間,且與該陰極電極12〇電連接。 所述奈米碳管線狀結構14〇2的第二部分14〇6設置於開孔 1102内,且由陰極電極12()向所述開扎11〇2的中心軸傾 斜延伸。所述開孔1102的中心軸為通過蘭孔i丨〇2相對兩 個開口中心的對稱軸◊所述奈米碳管線狀結構14〇2的第 一部分1406具有一尖端(圖未標),該尖端可略高或略 低於柵極電極130,也可與柵極電極13〇平齊。優選地, 所述的奈米碳管線狀結構14〇2的第二部分14〇6的尖端為 類圓錐形,其直徑沿遠離陰極電極12〇的方向逐漸減小, 且該大端略低於栅極電極13〇。請參閱圖3及圖4,所述奈 米碳管線狀結構1402的第二部分UQ6的失端包括複數個 098145703 表單編號A0101 第9頁/共25頁 0982078013-0 201123250 突出的場發射尖端1408。所述的場發射尖端14〇8包括複 數個基本平行的奈米碳管1410,該複數個奈米碳管141〇 之間通過凡德瓦爾力緊密結合。所述的場發射尖端14〇8 為類圓錐形。該場發射尖端1408的頂端突出有一單根奈 米碳管。 [0017] 本實施例中,所述電子發射單元140包括兩個奈米碳管線 狀結構1402,且每個奈米碳管線狀結構1402的第—部分 1404固定於絕緣基板110與陰極電極120之間。所述兩個 奈米碳管線狀結構1402的第二部分140 6由陰極電極12〇 向開孔1102遠離陰極電極120的蘭口中心位置傾斜延伸。 該兩個奈米碳管線狀結構1402的第二部分1406的尖端可 以間隔設置或相互接觸。可以理解,本實施例中的部分 相鄰電子發射單元140的奈米碳管線狀結構1402彎折形成 —第一部分1404及該第一部分1404相對兩端彎折相連的 二第二部分1406 ’即,部分相鄰電子發射單元14〇的奈米 碳管線狀結構1402可共用一個第一部分1404。所述第一 部分1404固定於所述絕緣基翁H0與所述陰極電極120之 間’所述二第二部分1406分別設置於二相鄰的開孔1102 内’且均由陰極電極120向開孔1102的開口中心位置傾斜 延伸。 [0018] 可以理解,本發明實施例的場發射陰極結構1〇〇的電子發 射單元140也可包括兩個以上奈米碳管線狀結構1402。當 電子發射單元140包括兩個以上奈米碳管線狀結構1402時 ,每個奈米碳管線狀結構1402的第一部分1404固定於絕 緣基板110與陰極電極120之間,第二部分1 406設置於開 098145703 表單編號A0101 第10頁/共25頁 0982078013-0 201123250 孔11〇2内’且均由陰極電極120向開孔1102的開口中心 位置傾斜延伸。請參閱圖5,本發明實施例的場發射陰極 許構100的電子發射單元140也可僅包括一個奈米碳管線 狀结構1402 ° [0019] <以理解,本實施例中由於奈米碳管線狀結構1402的第 /部分1404固定於絕緣基板110與陰極電極120之間,故 ,該奈米碳管線狀結構1402可承受較大的電場力而不會 被€碭力拔出,從而使該奈米碳管線狀結構1402具有更 強的電子發射能力和更長的使用.壽命。 Ο [0020] <以理解’所述奈米碳管線狀結構1402内還可設置至少 一異有柔韌性和可塑性的支撐線材(圖未示)。所述支 撐線材可與奈米破管線狀結構1402平行緊密設置組成束 狀結構,也可與奈米碳管線狀結構1402相互扭轉組成絞 線结構。所述支撑線材可為銘絲、銅絲、金絲等金屬微 絲。所述支撐線材可進一步提高奈米碳f瘳狀結構14〇2 的自支撐性’使其由陰極電極120向開孔11〇2的開口中心 . . * Ο [0021] 位置傾斜延伸。 進〆梦,所述場發射陰極結構100還可包括一導電層(圖 未禾)。所述導電層至少設置於開孔1102靠近柵極電極 13〇的部份内壁上。該導電層與栅極電極130電連接,並 與所述電子發射單元140電絕緣。由於該導電層與所述栅 極電極130電連接’電子發射單元140發射出的部分電子 落到導電層,通過該導電層與柵極電極130將該電子導走 ,可避免該部分電子森擊所述絕緣基板110,減少該絕緣 基板110產生二次電子並在其上積累電荷的可能性,進而 098145703 表單編號A0101 第11頁/共25頁 0982078013-0 201123250 使得該絕緣基板π〇周圍的電位改變不明顯,從而減少電 子向四周發散的可能性’電子可集中射向預定位置。 [0022] 請參見圖6,本發明實施例提供一種採用場發射陰極結構 1〇〇的顯示器10,其包括一陰極基板1〇2,一陽極基板 104,一場發射陰極結構1〇〇及一陽極結構1〇6。 [0023] 其中,所述陰極基板102通過一絕緣支撐體丨〇5與陽極基 板1 04四周封接。所述場發射陰極結構1 〇〇與一陽極結構 106密封於陰極基板1〇2與陽極基板之間。所述場發 射陰極結構100設置於騎述陰極基板1 〇2上,且陰極電極 120與陰極基板1〇2接觸。所述陽極結構1〇6設置於所述 陽極基板104上。所述陽極結構與場發射陰極結構 10 0之間保持一定距離。 [0024] 所述陰極基板1〇2的材料可為玻璃、陶瓷、二氧化矽等絕 緣材料。所述一陽極基板104可為一透明基板。本實施例 中’所述陰極基板102與陽極基板104均為一玻璃板。 [0025] 所述陽極結構1 0 6包栝一塗覆於陽極基板1 〇 4上的陽極電 極107及塗覆於陽極電極1〇7上的螢光粉層1〇8。所述陽 極電極107可為氧化銦錫薄膜。所述螢光粉層丨〇8包括複 數個發光單元,該複數個發光單元與電子發射單元14〇對 應設置。 [0026] 綜上所述,本發明確已符合發明專利之要件,遂依法提 出專利申請。惟,以上所述者僅為本發明之較佳實施例 ,自不能以此限制本案之申請專利範圍。舉凡熟悉本案 技藝之人士援依本發明之精神所作之等效修飾或變化, 098145703 表單編號Α0101 第12頁/共25頁 0982078013-0 201123250 皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0027] 圖1為本發明實施例提供的場發射陰極結構的示意圖。 [0028] 圖2為圖1中的場發射陰極結構沿II-II線的剖面圖。 [0029] 圖3為本發明實施例提供的場發射陰極結構中的奈米碳管 線狀結構的場發射尖端的結構示意圖。 [0030] 圖4為本發明實施例提供的場發射陰極結構中的奈米碳管 線狀結構的場發射尖端的掃描電鏡照片。 Ο [0031] 圖5為本發明實施例電子發射單元僅包括一個奈米碳管線 狀結構的場發射陰極結構的側視圖。 [0032] 圖6為採用本發明實施例的場發射陰極結構的顯示器的側 視圖。 > 【主要元件符號說明】 [0033] 顯示器:10 ^ [0034] 陰極基板:102 〇 [0035] 陽極基板:104 [0036] 絕緣支撐體:105 [0037] 陽極結構:106 [0038] 陽極電極:107 [0039] 螢光粉層:108 [0040] 場發射陰極結構:100 098145703 表單編號A0101 第13頁/共25頁 0982078013-0 201123250 [0041] 絕緣基板:110 [0042] 開孔:1102 [0043] 第二表面:1104 [0044] 第一表面:1106 [0045] 陰極電極:120 [0046] 柵極電極:130 [0047] 電子發射單元:140 [0048] 奈米碳管線狀結構:1402 [0049] 第一部分:1404 [0050] 第二部分:1406 [0051] 場發射尖端:1408 [0052] 奈米碳管:1410 098145703 表單編號A0101 第14頁/共25頁 0982078013-0[Technical Field] The present invention relates to a field emission cathode structure based on a carbon nanotube and a display using the field emission cathode structure. [Prior Art] The field emission display is the next generation of emerging technologies with the most potential after the cathode ray tube (CRT) display and liquid crystal display (LCD). Compared with the previous display, the field emission display has the advantages of good display effect, large viewing angle, low power consumption and small volume, especially for the field emission display based on carbon nanotubes. In recent years, it has become more and more heavily exposed. An important component of a structure field emission display. The field emission cathode structure based on a carbon nanotube generally comprises an insulating substrate; a plurality of cathode electrodes, the plurality of cathode electrodes are disposed on the insulating substrate and are insulated in parallel in the same direction; a plurality of electron emitting units, the plurality of electrons The emission unit is evenly distributed on the plurality of cathode electrodes and electrically connected to the cathode electrode, each electron emission unit includes a plurality of carbon nanotubes 'one dielectric layer' disposed on the insulating substrate and corresponding to electron emission The unit is provided with a through hole, and the electron emission unit is disposed in the through hole, and a plurality of gates are disposed on the dielectric layer and disposed perpendicular to the opposite sides of the cathode electrode. Usually, the 'electron emission unit is an array of carbon nanotubes prepared by chemical vapor deposition. However, the carbon nanotube array prepared by chemical vapor deposition has a poor binding force to the cathode electrode, and the nanocarbon officer in the carbon nanotube array is easily pulled out by a strong electric field when emitting electrons, thereby limiting the field emission. The electron emission capability and lifetime of the cathode structure. Form No. A0101 Page 4/Total 25 Page 201123250 [Invention] [0005] In view of the above, a field emission cathode structure in which a silicon carbon nanotube and a cathode electrode can be firmly combined and a display using the field emission cathode structure are provided. The system is really « necessary. a field emission cathode structure comprising: an insulating substrate having a plurality of openings formed therein, and the insulating substrate has a second surface and a second surface opposite to the first surface, each The opening extends through the insulating substrate 'from the first surface to the second surface; the plurality of cathode electrodes 'the plurality of cathode electrodes are disposed in parallel on the second surface of the insulating substrate, the plurality of gate electrodes, the plurality of gate electrodes The electrodes are disposed in parallel on the second surface of the insulating substrate, and the plurality of gate electrodes are disposed opposite to the plurality of cathode electrodes; and a plurality of electron emitting units, the plurality of electron emitting units are respectively opened a hole correspondingly disposed and electrically connected to the cathode electrode; wherein 'the electron emission unit includes at least / a carbon nanotube-like structure, a portion of the nanocarbon line-like structure is fixed to the insulating substrate and the cathode A part of the electrodes is disposed in the opening. [0007] A display comprising: a cathode substrate, an anode substrate, a field emission cathode structure and an anode structure, the field emission cathode structure comprising: an insulating substrate, the insulating substrate is formed with a plurality of openings And the insulating substrate has a first surface and a second surface opposite to the first surface, each opening extending through the insulating substrate, extending from the first surface to the second surface: a plurality of cathode electrodes, the plurality of cathode electrodes being arranged in parallel a first surface of the insulating substrate; a plurality of gate electrodes, the plurality of gate electrodes are disposed in parallel on the second surface of the substrate, and the plurality of 098145703 form number A0101 5th page/total 25 pages 0982078013 [0011] [0011] [0011] 098145703 Γ electrode and the plurality of cathode electrodes are arranged across the surface, and the complex number = sub-emission unit, the plurality of electron-emitting units and a history of opening And electrically connected to the cathode electrode; wherein the electron emission early I comprises at least a carbon nanotube-like structure, and the portion of the nanocarbon pipeline structure is fixed at the Between the insulating substrate and the cathode electrode 'part disposed in the opening. Compared with the prior art, 'the field emission cathode structure provided by the present invention and the nanocarbon line-like structure in the display are partially fixed between the insulating substrate and the cathode 2', so the m carbon line-like structure is firmly fixed. The insulating substrate and the cathode electrode are painful and can withstand a large electric field force without being pulled out by the electric field force, so that the nanocarbon line-like structure has stronger electron emission capability and a longer service life. [Embodiment] The field emission cathode structure of the present invention and a display using the field emission cathode structure will be described below in conjunction with the related materials. The field emission cathode structure of the present invention can be applied to a two-dimensional field emission display 'tripolar field emission display, etc.'. A three-pole field emission display will be exemplified below. 1 to 2, a field emission cathode structure 100 includes an insulating substrate 11 (), a plurality of cathode electrodes 120, a plurality of gate electrodes 13 and A plurality of electron emission units 140. A plurality of openings 11〇2 are formed on the insulating substrate 110, and each of the electron emitting units 140 is disposed corresponding to an opening U02. The insulating substrate has a first surface 11〇6 and a second form number A0101 opposite to the first surface 11〇6. Page 6 of 25 0982078013-0 201123250 Face 1104. Each of the openings 1102 extends through the insulating substrate 110 and extends from the first surface 116L to the second surface 11. The plurality of gate electrodes 1 are disposed on the second surface 1104 of the insulating substrate 110. The plurality of cathode electrodes 0 X are placed on the first surface 1106 of the insulating substrate. The cathode electrode 0 and the gate electrode 130 are both strip electrodes. The plurality of cathode electrodes 120 are disposed in parallel. The plurality of gate electrodes 130 are disposed in parallel, and the cathode electrodes 120 are disposed perpendicularly to the gate electrodes 130. The electron emission unit 140 is electrically connected to the cathode electrode 12A. Since the cathode electrode 12A is disposed perpendicularly to the gate electrode 130, each electron emission unit 140 can be controlled to independently emit electrons by controlling the cathode electrode 12A and the gate electrode 13A. [0012] The material of the insulating substrate 1 may be glass, ceramic, plastic or polymer. The shape and thickness of the insulating substrate 110 are not limited and can be prepared according to actual needs. Preferably, the insulating substrate 110 has a square or rectangular shape and a thickness of 15 μm or more. A plurality of openings 1102 on the insulating substrate 110 are arranged in an array, and each of the openings 1102 may have a diameter of 3 micrometers to 1 000 micrometers. In the present embodiment, the insulating substrate 11 is a square high temperature resistant polymer substrate having a length of 50 mm and a thickness of 1 mm. On the polymer substrate, 10 x 10 (10 rows in total, 10 per row) of openings 1 0 2 having a diameter of 2 mm were formed. [0013] The material of the cathode electrode 120 may be a metal such as copper, aluminum, gold or silver or a conductive paste or the like. In this embodiment, the cathode electrode 120 is a strip of copper. It can be understood that when the material of the cathode electrode 120 is a conductive paste, the diameter of the opening 1102 should be less than 500 micrometers, so that when the conductive paste is printed, the conductive paste can form a conductive layer on the opening 1102 due to capillary phenomenon. Membrane 098145703 Form No. A0101 Page 7 / Total 25 page 0982078013-0 201123250 [0015] The material of the gate electrode 130 may be a metal such as copper, aluminum, gold, silver or a conductive paste or the like. A gate hole (not labeled) is formed on the gate electrode 丨3〇. The gate hole is a through hole, and the diameter of the gate hole is 1 micrometer to 1 micrometer. The gate electrode 130 is disposed on the second surface 11〇4 of the insulating substrate 11〇, and the gate hole of the gate electrode 130 is corresponding to the opening 丨1〇2 of the insulating substrate 丨1(), Electrons emitted by the electron-emitting unit 14A can be emitted through the gate holes. § When the field emission cathode structure of the present invention is applied to a bipolar field emission display, the gate electrode 13 may be omitted. The gate electrode 130 is a strip printed on the conductive paste in the embodiment. The electrode, and the straight hole of the gate hole is 20 micrometers. The electron emission single TC14G includes at least a nanocarbon line structure. The skeletal structure of the rabbit includes at least one nano carbon line. ^ When the nanocarbon pipeline structure consists of a plurality of nai (four) pipelines, the complex (four) m carbon pipelines are parallel-rowed into bundles. The heterogeneous oil carbon nanotubes assist each other to form a twisted-line structure. The nanocarbon pipeline includes a plurality of along The carbon nanotubes (4) oriented carbon nanotubes are oriented (4). The nanocarbon line ^ is a non-twisted nano carbon line or a twisted nano carbon line. The non-twisted non-carbon s-line is obtained by treating the organic film with an organic solvent. The non-twisted nanocarbon pipeline includes a plurality of carbon nanotubes arranged along the nanocarbon pipeline (four), that is, the axial direction of the carbon nanotubes is substantially parallel to the carbon nanotubes. The twisted nanocarbon line is obtained by twisting the opposite ends of the carbon nanotube film with a mechanical description. The torsion (four) meter breaking tube = a plurality of winding carbon nanotubes _ spirally aligned carbon tube, that is, the axial direction of the carbon nanotubes along the axial direction of the carbon nanotube _ 098145703 Form No. A0101 Page 8 / 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The carbon nanotubes in the nanocarbon line are single-walled, double-walled or multi-walled carbon nanotubes. The carbon nanotubes have a diameter of less than 5 nanometers and have a length ranging from 10 micrometers to 100 micrometers. For details of the nano carbon pipeline and the preparation method thereof, please refer to the 'Taiwan Announcement Patent No. 1303239 published on November 21, 2008, which is filed on November 5, 2002. The manufacturing method thereof, and the Taiwan Patent Application No. TW200724486, which was filed on Dec. 1, 2005, filed on July 1, 2005, discloses a method for producing a carbon nanotube wire. In order to save space, 'only quoted from Qin, but all the technical disclosures of the above application should also be '....................is considered part of the technical disclosure of the present application. The nanocarbon line-like structure 1402_ is folded to form a first portion 1404 and a second portion 1406 connected to the first portion 1404. The first portion 1404 of the nanocarbon line-like structure 1402 is fixed to the insulating substrate 11. 〇 is electrically connected to the cathode electrode 120 and to the cathode electrode 12A. The second portion 14〇6 of the nanocarbon line-like structure 14〇2 is disposed in the opening 1102 and extends obliquely from the cathode electrode 12() toward the central axis of the opening 11〇2. The central axis of the opening 1102 is an axis of symmetry passing through the center of the two apertures 兰2, and the first portion 1406 of the nanocarbon line-like structure 14〇2 has a tip (not labeled). The tip may be slightly higher or slightly lower than the gate electrode 130 or may be flush with the gate electrode 13A. Preferably, the tip end of the second portion 14〇6 of the nanocarbon line-like structure 14〇2 is conical-shaped, and its diameter gradually decreases in a direction away from the cathode electrode 12〇, and the big end is slightly lower than The gate electrode 13 is. Referring to Figures 3 and 4, the missing portion of the second portion UQ6 of the nanocarbon line-like structure 1402 includes a plurality of 098145703 Form No. A0101 Page 9 of 25 0982078013-0 201123250 A prominent field emission tip 1408. The field emission tip 14A includes a plurality of substantially parallel carbon nanotubes 1410, which are tightly coupled by Van der Waals force between the plurality of carbon nanotubes 141. The field emission tip 14〇8 is conical like a cone. A single carbon nanotube protrudes from the top end of the field emission tip 1408. [0017] In this embodiment, the electron emission unit 140 includes two nano carbon line-like structures 1402, and the first portion 1404 of each nano carbon line structure 1402 is fixed to the insulating substrate 110 and the cathode electrode 120. between. The second portion 140 6 of the two nanocarbon line-like structures 1402 extends obliquely from the cathode electrode 12 to the center of the opening of the opening 1102 away from the cathode electrode 120. The tips of the second portions 1406 of the two nanocarbon line-like structures 1402 can be spaced apart or in contact with one another. It can be understood that the nano carbon line-like structure 1402 of the portion of the adjacent electron-emitting units 140 in the present embodiment is bent and formed—the first portion 1404 and the second portion 1406′ of the first portion 1404 that are bent and connected at opposite ends, that is, The nanocarbon line-like structure 1402 of the portion of the adjacent electron-emitting units 14A may share a first portion 1404. The first portion 1404 is fixed between the insulating base H0 and the cathode electrode 120. The two second portions 1406 are respectively disposed in two adjacent openings 1102 and are both opened by the cathode electrode 120. The center position of the opening of 1102 extends obliquely. [0018] It can be understood that the electron emission unit 140 of the field emission cathode structure of the embodiment of the present invention may also include two or more nano carbon line-like structures 1402. When the electron emission unit 140 includes two or more nanocarbon line-like structures 1402, the first portion 1404 of each of the nanocarbon line-like structures 1402 is fixed between the insulating substrate 110 and the cathode electrode 120, and the second portion 1406 is disposed at 098145703 Form No. A0101 Page 10/Total 25 pages 0982078013-0 201123250 Holes 11〇2' and both extend obliquely from the cathode electrode 120 toward the center of the opening of the opening 1102. Referring to FIG. 5, the electron emission unit 140 of the field emission cathode structure 100 of the embodiment of the present invention may also include only one nanocarbon line-like structure 1402 [0019] [Understanding, in this embodiment, due to nano carbon The first portion 1404 of the pipeline-like structure 1402 is fixed between the insulating substrate 110 and the cathode electrode 120. Therefore, the nanocarbon line-like structure 1402 can withstand a large electric field force without being pulled out by the force, thereby The nanocarbon line-like structure 1402 has a stronger electron emission capability and a longer use life. [0020] <Understanding" that at least one of the heterogeneous flexibility and plasticity of the support wire (not shown) may be disposed within the nanocarbon line-like structure 1402. The support wire may be arranged in parallel with the nano-breaking pipeline-like structure 1402 to form a bundle structure, or may be twisted with the nano-carbon line-like structure 1402 to form a strand structure. The support wire may be a metal microfilament such as a Ming wire, a copper wire or a gold wire. The support wire can further enhance the self-supporting property of the nanocarbon f-like structure 14〇2 such that it is from the cathode electrode 120 toward the opening center of the opening 11〇2. * Ο [0021] The position is obliquely extended. In the nightmare, the field emission cathode structure 100 may further include a conductive layer (Fig. The conductive layer is disposed at least on a portion of the inner wall of the opening 1102 adjacent to the gate electrode 13?. The conductive layer is electrically connected to the gate electrode 130 and electrically insulated from the electron emission unit 140. Since the conductive layer is electrically connected to the gate electrode 130, part of the electrons emitted by the electron emission unit 140 fall to the conductive layer, and the electrons are guided away by the conductive layer and the gate electrode 130, thereby avoiding the partial electronic smashing. The insulating substrate 110 reduces the possibility that the insulating substrate 110 generates secondary electrons and accumulates charges thereon, and further 098145703 Form No. A0101 Page 11 / Total 25 pages 0982078013-0 201123250 The potential around the insulating substrate π〇 The change is not obvious, thereby reducing the possibility of electrons diverging around. The electrons can be concentrated to a predetermined position. [0022] Referring to FIG. 6, an embodiment of the present invention provides a display 10 using a field emission cathode structure, which includes a cathode substrate 1〇2, an anode substrate 104, a field emission cathode structure, and an anode. Structure 1〇6. [0023] wherein the cathode substrate 102 is sealed around the anode substrate 104 by an insulating support body 丨〇5. The field emission cathode structure 1 〇〇 and an anode structure 106 are sealed between the cathode substrate 1 2 and the anode substrate. The field emission cathode structure 100 is disposed on the riding cathode substrate 1 〇 2, and the cathode electrode 120 is in contact with the cathode substrate 1 〇 2 . The anode structure 1?6 is disposed on the anode substrate 104. The anode structure is maintained at a distance from the field emission cathode structure 100. [0024] The material of the cathode substrate 1〇2 may be an insulating material such as glass, ceramic, or cerium oxide. The anode substrate 104 can be a transparent substrate. In the present embodiment, the cathode substrate 102 and the anode substrate 104 are both a glass plate. [0025] The anode structure 106 includes an anode electrode 107 coated on the anode substrate 1 〇 4 and a phosphor layer 1 〇 8 coated on the anode electrode 1〇7. The anode electrode 107 may be an indium tin oxide film. The phosphor layer 8 includes a plurality of light emitting units, and the plurality of light emitting units are disposed corresponding to the electron emitting unit 14A. In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Any person skilled in the art will be able to make equivalent modifications or variations in accordance with the spirit of the present invention. 098145703 Form No. Α0101 Page 12 of 25 0982078013-0 201123250 All should be covered by the following patents. BRIEF DESCRIPTION OF THE DRAWINGS [0027] FIG. 1 is a schematic diagram of a field emission cathode structure according to an embodiment of the present invention. 2 is a cross-sectional view of the field emission cathode structure of FIG. 1 taken along line II-II. [0028] FIG. 3 is a schematic structural view of a field emission tip of a carbon nanotube linear structure in a field emission cathode structure according to an embodiment of the present invention. 4 is a scanning electron micrograph of a field emission tip of a carbon nanotube linear structure in a field emission cathode structure according to an embodiment of the present invention. 5 is a side view of a field emission cathode structure in which an electron emission unit includes only one nanocarbon line-like structure according to an embodiment of the present invention. 6 is a side elevational view of a display employing a field emission cathode structure in accordance with an embodiment of the present invention. > [Main component symbol description] [0033] Display: 10 ^ [0034] Cathode substrate: 102 〇 [0035] Anode substrate: 104 [0036] Insulating support: 105 [0037] Anode structure: 106 [0038] Anode electrode : 107 [0039] Fluorescent powder layer: 108 [0040] Field emission cathode structure: 100 098145703 Form No. A0101 Page 13 / Total 25 pages 0982078013-0 201123250 [0041] Insulating substrate: 110 [0042] Opening: 1102 [ 0043] Second surface: 1104 [0044] First surface: 1106 [0045] Cathode electrode: 120 [0046] Gate electrode: 130 [0047] Electron emission unit: 140 [0048] Nano carbon line structure: 1402 [ 0049] Part 1: 1404 [0050] Part 2: 1406 [0051] Field Emission Tip: 1408 [0052] Carbon Tube: 1410 098145703 Form No. A0101 Page 14 of 25 0982078013-0

Claims (1)

201123250 七、申請專利範圍: 1 . 一種場發射陰極結構,其包括: 一絕緣基板,該絕緣基板上形成有複數個開孔,且該絕緣 基板具有第一表面及與該第一表面相對的第二表面,每個 開孔貫穿絕緣基板,從第一表面延伸至第二表面. 複數個陰極電極’该複數個陰極電極平行設置於所述絕緣 基板的第一表面;及 複數個電子發射單元’該複數個電子發射單元分別與一開 孔對應設置’且與所述陰極電極電連接; 〇 其改良在於,所述電子發射單元包括至少一根奈米碳管線 狀結構’該奈米碳管線狀結構的一部分固走於所述絕緣夷 板與所述陰極電極之間,一部分設置於開孔内。 2 .如申請專利範圍第1項所述的場發射陰極結構,其中,所 述奈米碳管線狀結構包括一第一部分及與該第一部分—端 彎折相連的一第二部分,所述第一部分固定於所述絕緣基 板與所述陰極電極之間,所述第二部分設置於開孔内,且 由陰極電極向開孔的中'心軸.傾斜延伸。*_ ◎ 3 .如申請專利辄圍第2項所述的場番射陰極結構,其中,所 述第二部分由陰極電極向開孔退離陰極電極1的開口中心 位置傾斜延伸。 4 .如申請專利範圍第2項所述的場發射陰極結構,其中,所 述奈米板管線狀結構的第二部分具有一尖端,且該尖端包 括複數個場發射尖端。 5 ·如申請專利範圍第4項所述的場發射陰極結構,其中,所 述場發射尖端包括複數個基本平行的奈来碳管,該複數個 098145703 表單編號A0101 第15頁/共25頁 0982078013-0 201123250 奈米碳管之間通過凡德瓦爾力緊密結合。 6 .如申請專利範圍第4項所述的場發射陰極結構,其中,所 述的場發射尖端為類圓錐形,且該場發射尖端的頂端突出 有一單根奈米碳管。 7 .如申請專利範圍第6項所述的場發射陰極結構,其中,所 述奈米碳管的直徑小於5奈米,長度為10微米〜100微米。 8 .如申請專利範圍第1項所述的場發射陰極結構,其中,所 述奈米碳管線狀結構包括至少一個奈米碳管線,該奈米碳 管線為非扭轉的奈米碳管線或扭轉的奈米碳管線。 9 .如申請專利範圍第8項所述的場發射陰極結構,其中,所 述非扭轉的奈米碳管線包括複數個沿奈米碳管線軸向排列 的奈米碳管。 1〇 .如申請專利範圍第8項所述的場發射陰極結構,其中,所 述扭轉的奈米碳管線包括複數個繞奈米碳管線軸向螺旋排 列的奈米碳管。 11 .如申請專利範圍第8項所述的場發射陰極結構,其中,所 述非扭轉的奈米碳管線或扭轉的奈米碳管線的直徑為0. 5 奈米~100微米。 12 .如申請專利範圍第8項所述的場發射陰極結構,其中,所 述奈米碳管線狀結構包括複數個奈米碳管線,複數個奈米 碳管線平行排列組成束狀結構。 13 .如申請專利範圍第8項所述的場發射陰極結構,其中,所 述奈米碳管線狀結構包括複數個奈米碳管線,複數個奈米 碳管線相互扭轉組成絞線結構。 14 .如申請專利範圍第1項所述的場發射陰極結構,其中,所 述奈米碳管線狀結構進一步包括一支撐線材。 098145703 表單編號A0101 第16頁/共25頁 0982078013-0 201123250 15 .如申請專利範圍第14項所述的場發射陰極結構,其中,所 述支撐線材為金屬微絲。 16.如申請專利範圍第14項所述的場發射陰極結構,其中,所 述支撐線材可與奈米碳管線狀結構平行緊密設置組成束狀 結構。 17 .如申請專利範圍第14項所述的場發射陰極結構,其中,所 述支樓線材可與奈米碳管線狀結構相互扭轉組成絞線結構 18 .如申請專利範圍第4項所述的場發射陰極結構,其中,所 述場發射陰極結構進一步包括複數個概極電極,該複數個 柵極電極平行設置於所述絕緣基板的第二表面,且該複數 個柵極電極與所述複數個陰極電極異面交又設置。 19 .如申請專利範圍第18項所述的場發射陰極結構其中,所 述第二部分的尖端低於柵極電極。 20 . 21 . 〇 22 . 098145703 如申請專利範圍第18項所述的場發射陰極結構,其中,所 述第二部分的尖端與柵極電桎平齊。^丨丨 :.::;; 如申請專利範圍第18項所述的場發射陰極結構,其中,進 一步包括-導電層’所述導電層至少設置於開孔靠近桃極 電極的部份内壁上’料電層與柵極電極電連接,並與 所述電子發射單元電絕緣。 如申明專利範圍第2項所述的場發射陰極結構其中所 述電子發射單元包括兩個奈米碳管線狀結構每個奈来碳 管線狀結構的第-部分固定於絕緣基板與陰極電極之間, 且母個奈米碳官線狀結構的第二部分由陰極電極向開孔的 開口中心位置傾斜延伸。 如申請專利範圍第22項所述的場發射陰極結構,其中,所 表單編號A0101 第17頁/共25頁 0982078013- 23 . 201123250 述每個奈米碳管線狀結構的第二部具有一尖端,且兩個奈 米碳管線狀結構的第二部分的尖端間隔設置。 24 .如申請專利範圍第22項所述的場發射陰極結構,其中,所 述每個奈米碳管線狀結構的第二部具有一尖端,且兩個奈 米碳管線狀結構的第二部分的尖端相互接觸。 25 .如申請專利範圍第2項所述的場發射陰極結構,其中,所 述電子發射單元包括兩個以上奈米碳管線狀結構,每個奈 米碳管線狀結構的第一部分固定於絕緣基板與陰極電極之 間,第二部分設置於開孔内,且均由陰極電極向開孔的開 口中心位置傾斜延伸。 26.如申請專利範圍第2項所述的場發射陰極結構,其中,所 述部分相鄰電子發射單元的奈米碳管線狀結構可共用一個 第一部分。 27 .如申請專利範圍第26項所述的場發射陰極結構,其中,所 述部分相鄰電子發射單元的奈米碳管線狀結構彎折形成一 第一部分及該第一部分相對兩端彎折相連的二第二部分, 所述第一部分固定於所述絕緣基板與所述陰極電極之間, 所述二第二部分分別設置於二相鄰的開孔内,且均由陰極 電極向開孔的開口中心位置傾斜延伸。 28 .如申請專利範圍第1項所述的場發射陰極結構,其中,所 述絕緣基板的材料為玻璃、陶瓷、塑膠或聚合物。 29 .如申請專利範圍第1項所述的場發射陰極結構,其中,所 述開孔的直徑為3微米至1 000微米。 30 .如申請專利範圍第1項所述的場發射陰極結構,其中,所 述陰極電極的材料為金屬或導電漿料。 31 .如申請專利範圍第30項所述的場發射陰極結構,其中,所 098145703 表單編號A0101 第18頁/共25頁 0982078013-0 201123250 述陰極電極為一條形銅片。 32 . —種顯示器,其包括:一陰極基板,一陽極基板,一場發 射陰極結構及一陽極結構, 其中,所述場發射陰極結構為如申請專利範圍1至31中任 一項所述的場發射陰極結構。 〇 〇 098145703 表單編號 A0101 第 19 頁/共 25 頁 0982078013-0201123250 VII. Patent application scope: 1. A field emission cathode structure, comprising: an insulating substrate, the insulating substrate is formed with a plurality of openings, and the insulating substrate has a first surface and a first surface opposite to the first surface a second surface, each of the openings extending through the insulating substrate, extending from the first surface to the second surface. The plurality of cathode electrodes 'the plurality of cathode electrodes are disposed in parallel on the first surface of the insulating substrate; and the plurality of electron-emitting units' The plurality of electron-emitting units are respectively disposed corresponding to an opening and electrically connected to the cathode electrode; and the improvement is that the electron-emitting unit includes at least one nanocarbon line-like structure. A portion of the structure is fixed between the insulating plate and the cathode electrode, and a portion is disposed in the opening. 2. The field emission cathode structure of claim 1, wherein the nanocarbon line-like structure comprises a first portion and a second portion connected to the first portion-end bend, the A portion is fixed between the insulating substrate and the cathode electrode, and the second portion is disposed in the opening and extends obliquely from the cathode electrode toward the middle 'mandrel of the opening. The field cathode structure according to the second aspect of the invention, wherein the second portion is obliquely extended from a position at which the cathode electrode retreats from the opening of the cathode electrode 1 toward the opening. 4. The field emission cathode structure of claim 2, wherein the second portion of the nanowire-like structure has a tip and the tip includes a plurality of field emission tips. 5. The field emission cathode structure of claim 4, wherein the field emission tip comprises a plurality of substantially parallel carbon nanotubes, the plurality of 098145703 form number A0101 page 15 / 25 pages 0982078013 -0 201123250 The carbon nanotubes are tightly coupled by Van der Waals force. 6. The field emission cathode structure of claim 4, wherein the field emission tip is conical, and a tip of the field emission tip protrudes from a single carbon nanotube. 7. The field emission cathode structure of claim 6, wherein the carbon nanotubes have a diameter of less than 5 nanometers and a length of 10 micrometers to 100 micrometers. 8. The field emission cathode structure of claim 1, wherein the nanocarbon line-like structure comprises at least one nanocarbon pipeline, the nanocarbon pipeline being a non-twisted nanocarbon pipeline or twisted Nano carbon pipeline. 9. The field emission cathode structure of claim 8, wherein the non-twisted nanocarbon line comprises a plurality of carbon nanotubes arranged axially along a nanocarbon line. The field emission cathode structure of claim 8, wherein the twisted nanocarbon line comprises a plurality of carbon nanotubes arranged in an axial spiral arrangement around the carbon nanotube line. The nanometer to 100 micrometers. The diameter of the non-twisted nanocarbon line or the twisted nano carbon line is 0.5 to 100 micrometers. 12. The field emission cathode structure of claim 8, wherein the nanocarbon line-like structure comprises a plurality of nanocarbon pipelines, and the plurality of nanocarbon pipelines are arranged in parallel to form a bundle structure. 13. The field emission cathode structure of claim 8, wherein the nanocarbon line-like structure comprises a plurality of nanocarbon lines, and the plurality of nanocarbon lines are twisted to each other to form a stranded structure. The field emission cathode structure of claim 1, wherein the nanocarbon line-like structure further comprises a support wire. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 16. The field emission cathode structure of claim 14, wherein the support wire is arranged in parallel with the nanocarbon line-like structure to form a bundle structure. The field emission cathode structure according to claim 14, wherein the branch wire can be twisted with a nano carbon line structure to form a twisted wire structure 18, as described in claim 4 a field emission cathode structure, wherein the field emission cathode structure further includes a plurality of gate electrodes, the plurality of gate electrodes are disposed in parallel on the second surface of the insulating substrate, and the plurality of gate electrodes and the plurality The cathode electrodes are arranged in different directions. 19. The field emission cathode structure of claim 18, wherein the tip of the second portion is lower than the gate electrode. 20. The field emission cathode structure of claim 18, wherein the tip of the second portion is flush with the gate electrode. The field emission cathode structure of claim 18, further comprising a conductive layer, wherein the conductive layer is disposed at least on a portion of the inner wall of the opening adjacent to the peach electrode The electrical layer is electrically connected to the gate electrode and electrically insulated from the electron-emitting unit. The field emission cathode structure according to claim 2, wherein the electron emission unit comprises two nano carbon line-like structures, and a first portion of each nanocarbon line structure is fixed between the insulating substrate and the cathode electrode. And the second portion of the mother carbon nanowire linear structure extends obliquely from the cathode electrode toward the center of the opening of the opening. The field emission cathode structure according to claim 22, wherein the form number A0101 is 17 or a total of 25 pages 0982078013-23. 201123250 The second portion of each nanocarbon line structure has a tip. And the tips of the second portions of the two nanocarbon line-like structures are spaced apart. The field emission cathode structure of claim 22, wherein the second portion of each of the nanocarbon line-like structures has a tip end and the second portion of the two nanocarbon line-like structures The tips are in contact with each other. The field emission cathode structure of claim 2, wherein the electron emission unit comprises two or more nanocarbon line-like structures, and a first portion of each nanocarbon line-like structure is fixed to an insulating substrate. Between the cathode electrode and the cathode electrode, the second portion is disposed in the opening, and both extend obliquely from the cathode electrode toward the center of the opening of the opening. 26. The field emission cathode structure of claim 2, wherein the nanocarbon line-like structures of the partially adjacent electron-emitting units share a first portion. The field emission cathode structure according to claim 26, wherein the nano carbon line-like structure of the portion of the adjacent electron-emitting units is bent to form a first portion and the first portion is bent at opposite ends The second part is fixed between the insulating substrate and the cathode electrode, and the two second portions are respectively disposed in two adjacent openings, and both are from the cathode electrode to the opening. The center of the opening extends obliquely. The field emission cathode structure according to claim 1, wherein the material of the insulating substrate is glass, ceramic, plastic or polymer. The field emission cathode structure according to claim 1, wherein the opening has a diameter of from 3 μm to 1 000 μm. The field emission cathode structure according to claim 1, wherein the material of the cathode electrode is a metal or a conductive paste. 31. The field emission cathode structure according to claim 30, wherein 098145703 Form No. A0101 Page 18 of 25 0982078013-0 201123250 The cathode electrode is a strip of copper. 32. A display comprising: a cathode substrate, an anode substrate, a field emission cathode structure, and an anode structure, wherein the field emission cathode structure is the field according to any one of claims 1 to 31 The cathode structure is emitted. 〇 〇 098145703 Form No. A0101 Page 19 of 25 0982078013-0
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TWI451465B (en) * 2011-08-22 2014-09-01 Au Optronics Corp Field emission display device
US9000662B2 (en) 2011-09-30 2015-04-07 Tsinghua University Field emission device and field emission display having same

Family Cites Families (3)

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TWI329337B (en) * 2004-04-30 2010-08-21 Hon Hai Prec Ind Co Ltd Field emission display
KR20060119271A (en) * 2005-05-19 2006-11-24 삼성에스디아이 주식회사 Electron emission device and process of the same
CN101086939B (en) * 2006-06-09 2010-05-12 清华大学 Field radiation part and its making method

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TWI451465B (en) * 2011-08-22 2014-09-01 Au Optronics Corp Field emission display device
US9000662B2 (en) 2011-09-30 2015-04-07 Tsinghua University Field emission device and field emission display having same

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