TW201042019A - Polishing agent for semiconductor substrate and method for polishing semiconductor substrate - Google Patents

Polishing agent for semiconductor substrate and method for polishing semiconductor substrate Download PDF

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Publication number
TW201042019A
TW201042019A TW099112311A TW99112311A TW201042019A TW 201042019 A TW201042019 A TW 201042019A TW 099112311 A TW099112311 A TW 099112311A TW 99112311 A TW99112311 A TW 99112311A TW 201042019 A TW201042019 A TW 201042019A
Authority
TW
Taiwan
Prior art keywords
polishing
semiconductor substrate
grinding
polishing liquid
mass
Prior art date
Application number
TW099112311A
Other languages
English (en)
Chinese (zh)
Inventor
Yutaka Nomura
Shigeru Nobe
Jin Amanokura
Naoyuki Koyama
Ayako Tobita
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201042019A publication Critical patent/TW201042019A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW099112311A 2009-04-20 2010-04-20 Polishing agent for semiconductor substrate and method for polishing semiconductor substrate TW201042019A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2009101920 2009-04-20
JP2009101919 2009-04-20
JP2009102919 2009-04-21
JP2009173355 2009-07-24
JP2009173352 2009-07-24
JP2009173334 2009-07-24

Publications (1)

Publication Number Publication Date
TW201042019A true TW201042019A (en) 2010-12-01

Family

ID=43011102

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099112311A TW201042019A (en) 2009-04-20 2010-04-20 Polishing agent for semiconductor substrate and method for polishing semiconductor substrate

Country Status (4)

Country Link
JP (1) JP5413456B2 (ja)
KR (1) KR101277342B1 (ja)
TW (1) TW201042019A (ja)
WO (1) WO2010122985A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI492290B (zh) * 2010-12-10 2015-07-11 Shibaura Mechatronics Corp Machining devices and machining methods
TWI777176B (zh) * 2019-06-17 2022-09-11 美商應用材料股份有限公司 封裝基板的平面化方法
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11887934B2 (en) 2019-05-10 2024-01-30 Applied Materials, Inc. Package structure and fabrication methods

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
EP2665792B1 (en) * 2011-01-21 2020-04-22 Cabot Microelectronics Corporation Silicon polishing compositions with improved psd performance
KR20130135384A (ko) * 2011-06-01 2013-12-10 히타치가세이가부시끼가이샤 Cmp 연마액 및 반도체 기판의 연마 방법
CN102816530B (zh) * 2011-06-08 2016-01-27 安集微电子（上海）有限公司 一种化学机械抛光液
JP2013004910A (ja) * 2011-06-21 2013-01-07 Disco Abrasive Syst Ltd 埋め込み銅電極を有するウエーハの加工方法
SG11201401309PA (en) * 2011-10-24 2014-06-27 Fujimi Inc Composition for polishing purposes, polishing method using same, and method for producing substrate
WO2013073025A1 (ja) * 2011-11-16 2013-05-23 日産化学工業株式会社 半導体ウェーハ用研磨液組成物
CN105264647B (zh) 2013-06-07 2018-01-09 福吉米株式会社 硅晶圆研磨用组合物
JP6082464B2 (ja) * 2013-07-24 2017-02-15 株式会社トクヤマ Ｃｍｐ用シリカ、水性分散液およびｃｍｐ用シリカの製造方法
KR102594932B1 (ko) * 2015-05-08 2023-10-27 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
WO2016181889A1 (ja) * 2015-05-08 2016-11-17 株式会社フジミインコーポレーテッド 研磨用組成物
JP6747376B2 (ja) * 2017-05-15 2020-08-26 信越半導体株式会社 シリコンウエーハの研磨方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039513A3 (en) * 1999-03-26 2008-11-26 Canon Kabushiki Kaisha Method of producing a SOI wafer
US7338904B2 (en) * 2003-12-05 2008-03-04 Sumco Corporation Method for manufacturing single-side mirror surface wafer
JP4637761B2 (ja) * 2006-02-07 2011-02-23 パナソニック株式会社 半導体装置およびその製造方法
JP2007273910A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨用組成液
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI492290B (zh) * 2010-12-10 2015-07-11 Shibaura Mechatronics Corp Machining devices and machining methods
US11887934B2 (en) 2019-05-10 2024-01-30 Applied Materials, Inc. Package structure and fabrication methods
TWI777176B (zh) * 2019-06-17 2022-09-11 美商應用材料股份有限公司 封裝基板的平面化方法
TWI799329B (zh) * 2019-06-17 2023-04-11 美商應用材料股份有限公司 封裝基板的平面化方法
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11927885B2 (en) 2020-04-15 2024-03-12 Applied Materials, Inc. Fluoropolymer stamp fabrication method

Also Published As

Publication number Publication date
KR101277342B1 (ko) 2013-06-20
JP5413456B2 (ja) 2014-02-12
KR20120001766A (ko) 2012-01-04
WO2010122985A1 (ja) 2010-10-28
JPWO2010122985A1 (ja) 2012-10-25

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