KR101277342B1 - 반도체 기판용 연마액 및 반도체 기판의 연마 방법 - Google Patents

반도체 기판용 연마액 및 반도체 기판의 연마 방법 Download PDF

Info

Publication number
KR101277342B1
KR101277342B1 KR1020117024730A KR20117024730A KR101277342B1 KR 101277342 B1 KR101277342 B1 KR 101277342B1 KR 1020117024730 A KR1020117024730 A KR 1020117024730A KR 20117024730 A KR20117024730 A KR 20117024730A KR 101277342 B1 KR101277342 B1 KR 101277342B1
Authority
KR
South Korea
Prior art keywords
polishing
mass
polishing liquid
semiconductor substrate
wafer
Prior art date
Application number
KR1020117024730A
Other languages
English (en)
Korean (ko)
Other versions
KR20120001766A (ko
Inventor
유타카 노무라
시게루 노베
진 아마노쿠라
나오유키 고야마
아야코 도비타
Original Assignee
히타치가세이가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히타치가세이가부시끼가이샤 filed Critical 히타치가세이가부시끼가이샤
Publication of KR20120001766A publication Critical patent/KR20120001766A/ko
Application granted granted Critical
Publication of KR101277342B1 publication Critical patent/KR101277342B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020117024730A 2009-04-20 2010-04-19 반도체 기판용 연마액 및 반도체 기판의 연마 방법 KR101277342B1 (ko)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
JPJP-P-2009-101920 2009-04-20
JP2009101920 2009-04-20
JPJP-P-2009-101919 2009-04-20
JP2009101919 2009-04-20
JP2009102919 2009-04-21
JPJP-P-2009-102919 2009-04-21
JPJP-P-2009-173352 2009-07-24
JP2009173355 2009-07-24
JPJP-P-2009-173334 2009-07-24
JP2009173352 2009-07-24
JP2009173334 2009-07-24
JPJP-P-2009-173355 2009-07-24
PCT/JP2010/056948 WO2010122985A1 (ja) 2009-04-20 2010-04-19 半導体基板用研磨液及び半導体基板の研磨方法

Publications (2)

Publication Number Publication Date
KR20120001766A KR20120001766A (ko) 2012-01-04
KR101277342B1 true KR101277342B1 (ko) 2013-06-20

Family

ID=43011102

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117024730A KR101277342B1 (ko) 2009-04-20 2010-04-19 반도체 기판용 연마액 및 반도체 기판의 연마 방법

Country Status (4)

Country Link
JP (1) JP5413456B2 (ja)
KR (1) KR101277342B1 (ja)
TW (1) TW201042019A (ja)
WO (1) WO2010122985A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180002629A (ko) * 2015-05-08 2018-01-08 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
TWI492290B (zh) * 2010-12-10 2015-07-11 Shibaura Mechatronics Corp Machining devices and machining methods
EP2665792B1 (en) * 2011-01-21 2020-04-22 Cabot Microelectronics Corporation Silicon polishing compositions with improved psd performance
KR20130135384A (ko) * 2011-06-01 2013-12-10 히타치가세이가부시끼가이샤 Cmp 연마액 및 반도체 기판의 연마 방법
CN102816530B (zh) * 2011-06-08 2016-01-27 安集微电子（上海）有限公司 一种化学机械抛光液
JP2013004910A (ja) * 2011-06-21 2013-01-07 Disco Abrasive Syst Ltd 埋め込み銅電極を有するウエーハの加工方法
SG11201401309PA (en) * 2011-10-24 2014-06-27 Fujimi Inc Composition for polishing purposes, polishing method using same, and method for producing substrate
WO2013073025A1 (ja) * 2011-11-16 2013-05-23 日産化学工業株式会社 半導体ウェーハ用研磨液組成物
CN105264647B (zh) 2013-06-07 2018-01-09 福吉米株式会社 硅晶圆研磨用组合物
JP6082464B2 (ja) * 2013-07-24 2017-02-15 株式会社トクヤマ Ｃｍｐ用シリカ、水性分散液およびｃｍｐ用シリカの製造方法
WO2016181889A1 (ja) * 2015-05-08 2016-11-17 株式会社フジミインコーポレーテッド 研磨用組成物
JP6747376B2 (ja) * 2017-05-15 2020-08-26 信越半導体株式会社 シリコンウエーハの研磨方法
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
US11931855B2 (en) * 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214152A (ja) 2006-02-07 2007-08-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007273910A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨用組成液
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039513A3 (en) * 1999-03-26 2008-11-26 Canon Kabushiki Kaisha Method of producing a SOI wafer
US7338904B2 (en) * 2003-12-05 2008-03-04 Sumco Corporation Method for manufacturing single-side mirror surface wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214152A (ja) 2006-02-07 2007-08-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007273910A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨用組成液
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180002629A (ko) * 2015-05-08 2018-01-08 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
KR102594932B1 (ko) 2015-05-08 2023-10-27 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물

Also Published As

Publication number Publication date
TW201042019A (en) 2010-12-01
JP5413456B2 (ja) 2014-02-12
KR20120001766A (ko) 2012-01-04
WO2010122985A1 (ja) 2010-10-28
JPWO2010122985A1 (ja) 2012-10-25

Similar Documents

Publication Publication Date Title
KR101277342B1 (ko) 반도체 기판용 연마액 및 반도체 기판의 연마 방법
KR102240249B1 (ko) 화학적 기계적 평탄화 조성물용 복합 연마 입자 및 이를 사용하는 방법
JP4983603B2 (ja) 酸化セリウムスラリー、酸化セリウム研磨液及びこれらを用いた基板の研磨方法
KR101419156B1 (ko) Ｃｍｐ용 연마액 및 이것을 사용한 연마 방법
JP4985409B2 (ja) 絶縁膜研磨用ｃｍｐ研磨剤、研磨方法、該研磨方法で研磨された半導体電子部品
EP2289667B1 (en) Polishing agent for synthetic quartz glass substrate
KR20170126960A (ko) 양이온성 중합체 첨가제를 포함하는 연마 조성물
JP2008512871A (ja) メタレート変性シリカ粒子を含有する水性スラリー
EP2530706A1 (en) Method for reclaiming semiconductor wafer and polishing composition
TWI544065B (zh) 用於選擇性拋光基材的濕式氧化鈰組合物、及其相關方法
WO2011158718A1 (ja) 半導体基板用研磨液及び半導体ウエハの製造方法
TW201525117A (zh) 低缺陷化學機械硏磨組成物
TWI812595B (zh) 用於阻擋層平坦化之化學機械研磨液
TWI629324B (zh) 研磨基板之方法
JP2014154707A (ja) 研磨液、研磨方法及びシリコンウエハの製造方法
JP5516594B2 (ja) Ｃｍｐ研磨液、並びに、これを用いた研磨方法及び半導体基板の製造方法
JP6581299B2 (ja) Ｃｍｐ用スラリー組成物及びこれを用いた研磨方法
JP7356932B2 (ja) 研磨用組成物及び研磨方法
JP4346712B2 (ja) ウェーハエッジ研磨方法
TWI692510B (zh) 用於拋光記憶體硬碟以展現減少之表面刮痕之組合物及方法
JP2013110253A (ja) 半導体基板用研磨液及び半導体基板の研磨方法
JP7267893B2 (ja) 研磨用組成物
JP4878728B2 (ja) Ｃｍｐ研磨剤および基板の研磨方法
TW202344640A (zh) 用於矽氧化物、矽氮化物及多晶矽的選擇性及非選擇性cmp之基於氧化鈰的漿料組合物

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee