TW200828812A - Voltage control oscillator - Google Patents
Voltage control oscillator Download PDFInfo
- Publication number
- TW200828812A TW200828812A TW096135553A TW96135553A TW200828812A TW 200828812 A TW200828812 A TW 200828812A TW 096135553 A TW096135553 A TW 096135553A TW 96135553 A TW96135553 A TW 96135553A TW 200828812 A TW200828812 A TW 200828812A
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- TW
- Taiwan
- Prior art keywords
- switching transistor
- parallel
- capacitor
- transistor
- turned
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/025—Varying the frequency of the oscillations by electronic means the means being an electronic switch for switching in or out oscillator elements
- H03B2201/0266—Varying the frequency of the oscillations by electronic means the means being an electronic switch for switching in or out oscillator elements the means comprising a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
200828812 九、發明說明: 【發明所屬之技術領域】 本發明乃有關於電壓控制振盪器,特別是適用於具有 切換振盪頻率之機能的電壓控制振盪器。 【先前技術】 在無線電接收器、電視接收機等無線通信裝置所代表 之多數的運用場合中,係振盪器可同步,也就是被要求能 藉由控制電壓來切換振盪頻率。為此,振盪器是使用電壓 控制振盡器(V C 0 : Voltage Control led Osci 1 lator)。 例如’有被提案出一種作成可容易地因應振盪頻率的高頻 化且能切換頻帶的電壓控制振盪器(例如,參照專利文獻 1)。 【專利文獻1】 曰本國專利公開2 0 0 3 — 1 7 9 3 6號公報 第2圖係顯示習知的電壓控制振盪器之構成例。在第 2圖中,係利用電阻R1、R2、電容器Cl、C2及電 晶體N 1而構成了習知的柯匹次(Colpitts)振盪電路。藉 由對此柯匹次振盪電路連接變容二極體(varicap) VC, 而成為可作為電壓控制振盪器來利用。 又’在第2圖的例子中,為了增大頻率調諧範圍,係 對變容二極體VC並聯連接電容器C3,在該電容器C3 與接地電位之間連接有開關電晶體N 2,其被供給用以切 換共振頻的控制信號C 0 N T1。上述的專利文獻1所記 5 200828812 載的技術也具有與此同樣的構成。 【發明内容】 在第2圖的構成中’在使開關電晶體N 2導通的場 合,並接電容器C 3係透過開關電晶體N 2而與接地連 接。然而,當開關電晶體N 2設為截止時,並接電容器C 3係成為浮接的狀態。因而具有所謂造成振盪頻率附近的 相位雜訊惡化的問題。 本發明係為解決這樣的問題而完成者5其目的為’在 利用有柯匹次振盪電路的電壓控制振盪器中,防止為了增 大頻率調諧範圍所設置的電容器成為浮接狀態,並能改善 振盪頻率附近之相位雜訊的惡化。 為解決上述的課題,本發明中係作成,對為增大頻率 調諧範圍所設置的並接電容器,並列地設置第2開關電晶 體,在為了頻率切換而將串接於並接電容器的第1開關電 晶體截止時,第2開關電晶體成為導通。 依據上述那樣構成的本發明,在第1開關電晶體截止 時,對並接電容器並聯連接的第2開關電晶體係成為導 通,因為會依該第2開關電晶體的路徑而被短路,所以能 防止並接電容器成為浮接狀態。藉此,成為可抑制振盪頻 率附近之相位雜訊的惡化。 【實施方式】 以下,依據圖面來說明本發明的一個實施形態。第1 6 200828812 圖係顯示本實施形態所涉及的電壓控制振盡器之構成 例。在第1圖中,是由電阻R1、R2、電容器C1、C 2及電晶體N1構成了柯匹次振盪電路。變容二極體 係與此柯匹次振盪電路的電容器C 1、C 2並聯連接。此 外’在此疋使用變;g —極體v c,但是也可以使用除此以 外的可變電容元件。 ” 又,在第1圖的例子中,為了增大頻率調諧範圍,電 容器C 3係與變容二極體V C並聯連接。且,對變容二極 體V C並聯且對並接電容器c 3,串聯地連接第1開關電 晶體N 2,其閘極被供給用以切換共振頻帶用的第丄控制 信號C 0NT 1。亦即,第1開關電晶體N 2被連接在並 接電容器C 3與接地電位之間。 在本實施形態中,更對並接電容器c 3並聯地連接有 第2開關電晶體P 1,其閘極被供給第2控制信號◦〇n T 2。在此,第1開關電晶體n 2係由η Μ〇S電晶體所 構成’而弟2開關電晶體Ρ 1係由ρ μ 〇 s電晶體所構 成。而且控制成在第1開關電晶體Ν 2截止時,第2開關 電晶體Ρ1會成為導通。 以上所示的本實施形態之電壓控制振盪器,係依例如 CMOS (互補金屬氧化半導體;c〇mpiementary Metal
Oxide Semiconductor)製程或b i — CMOS (雙載子 互補式金屬氧化半導體;Bipolar-CMOS)製程而被積體化 成1個IC晶片。 7 200828812 電壓=振那本實施形態所涉及的 :二ί it!: 0 Ν τ 1是低準位日寺,第1開關電 2ίϊ並接電容器C3與變容二極體¥(:成 態。此時,將第2控制信號⑶nt 2 a又為低準位而使第2開關電晶體?丄導通。 藉此’因為會依通過第2開關電晶體p1的路徑而被 防止並接電容器c 3成為浮接狀態。藉此, 成為此抑制振錢率附近之相位雜訊㈣化。經模擬之 後’可將從振1頻率之偏移頻率△ f是1 Q k Η z時的相 位雜訊改善1 〇 d B以上。 此外,在上述實施形態中,係針對第工開關電晶體N 2疋使用η Μ 0 S電晶體而第2開關電晶體p 1是使用 ρ Μ〇S電晶體為例所作的說明,然而這只不過是一單純 的例子而已。但是,依據這樣的構成,能將第丄控制信號 C〇N T 1和第2控制信號C Ο N T 2設為相同信號而 可簡化控制系統。 又,在上述實施形態中,係針對將1組的電容器C 3 及第1開關電晶體N 2,對變容二極體V C並聯連接的例 子所作的說明,但是也可以作成將複數組電容器及第1開 關電晶體各自對變容二極體V C並聯連接。在此場合,第 2開關電晶體係例如對複數個並接電容器各自並聯連接。 此外,上述實施形態全都是在實施本發明時之具體化 8 200828812 子而已’並非指可藉此對本發明之技術範圍作限 釋者。亦即,本發明係可在不逸脫其精神或其主要的 特徵之下以各種形態來實施。 本發明係適用於,使用有柯匹次振盪電路的電壓控制 振盪器中具有振盪頻率之切換機能者。 【圖式簡單說明】 弟1圖係顯示本實施形態所涉及的電壓控制振蘯器之 構成例。 第2圖係顯示習知的電壓控制振盪器之構成例。 【主要元件符號說明】 R 1 :電阻 R 2 :電阻 Ν 1 :電晶體 Ν 2 :第1開關電晶體 C〇ΝΤ 1 :第1控制信號 C〇Ν Τ 2 ··第2控制信號 Ρ 1 :第2開關電晶體 C 1 :電容器 C 2 :電容器 C 3 ··並接電容器 V C :變容二極體 9
Claims (1)
- 200828812 十、申請專利範圍: 1. 一種電壓控制振盪器,其特徵為 具備: 柯匹次振盪電路; 可變電容元件,與上述柯匹次振盪電路的電容器 並聯連接; 並接電容器,與上述可變電容元件並聯連接;和 第1開關電晶體,與上述可變電容元件並聯且與 上述並接電容器串接;及 第2開關電晶體,與上述並接電容器並聯連接, 且 作成在上述第1開關電晶體截止時,上述第2開 關電晶體成為導通。 2. 如申請專利範圍第1項所記載的電壓控制振盪器,其 中上述第1開關電晶體係由η Μ〇S電晶體所構 成,上述第2開關電晶體係由pMO S電晶體所構 成0
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006274971A JP2008098731A (ja) | 2006-10-06 | 2006-10-06 | 電圧制御発振器 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200828812A true TW200828812A (en) | 2008-07-01 |
Family
ID=39282937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096135553A TW200828812A (en) | 2006-10-06 | 2007-09-21 | Voltage control oscillator |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2008098731A (zh) |
TW (1) | TW200828812A (zh) |
WO (1) | WO2008044747A1 (zh) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6286907A (ja) * | 1985-10-11 | 1987-04-21 | Matsushima Kogyo Co Ltd | 水晶発振回路 |
JP2000091845A (ja) * | 1998-09-10 | 2000-03-31 | Mitsubishi Electric Corp | コルピッツ発振回路及び無線通信端末装置 |
JP2003017936A (ja) * | 2001-06-28 | 2003-01-17 | Kyocera Corp | 電圧制御発振器 |
US6876266B2 (en) * | 2002-06-10 | 2005-04-05 | Gct Semiconductor, Inc. | LC oscillator with wide tuning range and low phase noise |
-
2006
- 2006-10-06 JP JP2006274971A patent/JP2008098731A/ja active Pending
-
2007
- 2007-09-21 TW TW096135553A patent/TW200828812A/zh unknown
- 2007-10-04 WO PCT/JP2007/069897 patent/WO2008044747A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2008098731A (ja) | 2008-04-24 |
WO2008044747A1 (fr) | 2008-04-17 |
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