TW200828812A - Voltage control oscillator - Google Patents

Voltage control oscillator Download PDF

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Publication number
TW200828812A
TW200828812A TW096135553A TW96135553A TW200828812A TW 200828812 A TW200828812 A TW 200828812A TW 096135553 A TW096135553 A TW 096135553A TW 96135553 A TW96135553 A TW 96135553A TW 200828812 A TW200828812 A TW 200828812A
Authority
TW
Taiwan
Prior art keywords
switching transistor
parallel
capacitor
transistor
turned
Prior art date
Application number
TW096135553A
Other languages
English (en)
Inventor
Yoshiaki Takahashi
Original Assignee
Niigata Seimitsu Co Ltd
Richoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Niigata Seimitsu Co Ltd, Richoh Co Ltd filed Critical Niigata Seimitsu Co Ltd
Publication of TW200828812A publication Critical patent/TW200828812A/zh

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02Varying the frequency of the oscillations by electronic means
    • H03B2201/025Varying the frequency of the oscillations by electronic means the means being an electronic switch for switching in or out oscillator elements
    • H03B2201/0266Varying the frequency of the oscillations by electronic means the means being an electronic switch for switching in or out oscillator elements the means comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Description

200828812 九、發明說明: 【發明所屬之技術領域】 本發明乃有關於電壓控制振盪器,特別是適用於具有 切換振盪頻率之機能的電壓控制振盪器。 【先前技術】 在無線電接收器、電視接收機等無線通信裝置所代表 之多數的運用場合中,係振盪器可同步,也就是被要求能 藉由控制電壓來切換振盪頻率。為此,振盪器是使用電壓 控制振盡器(V C 0 : Voltage Control led Osci 1 lator)。 例如’有被提案出一種作成可容易地因應振盪頻率的高頻 化且能切換頻帶的電壓控制振盪器(例如,參照專利文獻 1)。 【專利文獻1】 曰本國專利公開2 0 0 3 — 1 7 9 3 6號公報 第2圖係顯示習知的電壓控制振盪器之構成例。在第 2圖中,係利用電阻R1、R2、電容器Cl、C2及電 晶體N 1而構成了習知的柯匹次(Colpitts)振盪電路。藉 由對此柯匹次振盪電路連接變容二極體(varicap) VC, 而成為可作為電壓控制振盪器來利用。 又’在第2圖的例子中,為了增大頻率調諧範圍,係 對變容二極體VC並聯連接電容器C3,在該電容器C3 與接地電位之間連接有開關電晶體N 2,其被供給用以切 換共振頻的控制信號C 0 N T1。上述的專利文獻1所記 5 200828812 載的技術也具有與此同樣的構成。 【發明内容】 在第2圖的構成中’在使開關電晶體N 2導通的場 合,並接電容器C 3係透過開關電晶體N 2而與接地連 接。然而,當開關電晶體N 2設為截止時,並接電容器C 3係成為浮接的狀態。因而具有所謂造成振盪頻率附近的 相位雜訊惡化的問題。 本發明係為解決這樣的問題而完成者5其目的為’在 利用有柯匹次振盪電路的電壓控制振盪器中,防止為了增 大頻率調諧範圍所設置的電容器成為浮接狀態,並能改善 振盪頻率附近之相位雜訊的惡化。 為解決上述的課題,本發明中係作成,對為增大頻率 調諧範圍所設置的並接電容器,並列地設置第2開關電晶 體,在為了頻率切換而將串接於並接電容器的第1開關電 晶體截止時,第2開關電晶體成為導通。 依據上述那樣構成的本發明,在第1開關電晶體截止 時,對並接電容器並聯連接的第2開關電晶體係成為導 通,因為會依該第2開關電晶體的路徑而被短路,所以能 防止並接電容器成為浮接狀態。藉此,成為可抑制振盪頻 率附近之相位雜訊的惡化。 【實施方式】 以下,依據圖面來說明本發明的一個實施形態。第1 6 200828812 圖係顯示本實施形態所涉及的電壓控制振盡器之構成 例。在第1圖中,是由電阻R1、R2、電容器C1、C 2及電晶體N1構成了柯匹次振盪電路。變容二極體 係與此柯匹次振盪電路的電容器C 1、C 2並聯連接。此 外’在此疋使用變;g —極體v c,但是也可以使用除此以 外的可變電容元件。 ” 又,在第1圖的例子中,為了增大頻率調諧範圍,電 容器C 3係與變容二極體V C並聯連接。且,對變容二極 體V C並聯且對並接電容器c 3,串聯地連接第1開關電 晶體N 2,其閘極被供給用以切換共振頻帶用的第丄控制 信號C 0NT 1。亦即,第1開關電晶體N 2被連接在並 接電容器C 3與接地電位之間。 在本實施形態中,更對並接電容器c 3並聯地連接有 第2開關電晶體P 1,其閘極被供給第2控制信號◦〇n T 2。在此,第1開關電晶體n 2係由η Μ〇S電晶體所 構成’而弟2開關電晶體Ρ 1係由ρ μ 〇 s電晶體所構 成。而且控制成在第1開關電晶體Ν 2截止時,第2開關 電晶體Ρ1會成為導通。 以上所示的本實施形態之電壓控制振盪器,係依例如 CMOS (互補金屬氧化半導體;c〇mpiementary Metal
Oxide Semiconductor)製程或b i — CMOS (雙載子 互補式金屬氧化半導體;Bipolar-CMOS)製程而被積體化 成1個IC晶片。 7 200828812 電壓=振那本實施形態所涉及的 :二ί it!: 0 Ν τ 1是低準位日寺,第1開關電 2ίϊ並接電容器C3與變容二極體¥(:成 態。此時,將第2控制信號⑶nt 2 a又為低準位而使第2開關電晶體?丄導通。 藉此’因為會依通過第2開關電晶體p1的路徑而被 防止並接電容器c 3成為浮接狀態。藉此, 成為此抑制振錢率附近之相位雜訊㈣化。經模擬之 後’可將從振1頻率之偏移頻率△ f是1 Q k Η z時的相 位雜訊改善1 〇 d B以上。 此外,在上述實施形態中,係針對第工開關電晶體N 2疋使用η Μ 0 S電晶體而第2開關電晶體p 1是使用 ρ Μ〇S電晶體為例所作的說明,然而這只不過是一單純 的例子而已。但是,依據這樣的構成,能將第丄控制信號 C〇N T 1和第2控制信號C Ο N T 2設為相同信號而 可簡化控制系統。 又,在上述實施形態中,係針對將1組的電容器C 3 及第1開關電晶體N 2,對變容二極體V C並聯連接的例 子所作的說明,但是也可以作成將複數組電容器及第1開 關電晶體各自對變容二極體V C並聯連接。在此場合,第 2開關電晶體係例如對複數個並接電容器各自並聯連接。 此外,上述實施形態全都是在實施本發明時之具體化 8 200828812 子而已’並非指可藉此對本發明之技術範圍作限 釋者。亦即,本發明係可在不逸脫其精神或其主要的 特徵之下以各種形態來實施。 本發明係適用於,使用有柯匹次振盪電路的電壓控制 振盪器中具有振盪頻率之切換機能者。 【圖式簡單說明】 弟1圖係顯示本實施形態所涉及的電壓控制振蘯器之 構成例。 第2圖係顯示習知的電壓控制振盪器之構成例。 【主要元件符號說明】 R 1 :電阻 R 2 :電阻 Ν 1 :電晶體 Ν 2 :第1開關電晶體 C〇ΝΤ 1 :第1控制信號 C〇Ν Τ 2 ··第2控制信號 Ρ 1 :第2開關電晶體 C 1 :電容器 C 2 :電容器 C 3 ··並接電容器 V C :變容二極體 9

Claims (1)

  1. 200828812 十、申請專利範圍: 1. 一種電壓控制振盪器,其特徵為 具備: 柯匹次振盪電路; 可變電容元件,與上述柯匹次振盪電路的電容器 並聯連接; 並接電容器,與上述可變電容元件並聯連接;和 第1開關電晶體,與上述可變電容元件並聯且與 上述並接電容器串接;及 第2開關電晶體,與上述並接電容器並聯連接, 且 作成在上述第1開關電晶體截止時,上述第2開 關電晶體成為導通。 2. 如申請專利範圍第1項所記載的電壓控制振盪器,其 中上述第1開關電晶體係由η Μ〇S電晶體所構 成,上述第2開關電晶體係由pMO S電晶體所構 成0
TW096135553A 2006-10-06 2007-09-21 Voltage control oscillator TW200828812A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006274971A JP2008098731A (ja) 2006-10-06 2006-10-06 電圧制御発振器

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TW200828812A true TW200828812A (en) 2008-07-01

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JP (1) JP2008098731A (zh)
TW (1) TW200828812A (zh)
WO (1) WO2008044747A1 (zh)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286907A (ja) * 1985-10-11 1987-04-21 Matsushima Kogyo Co Ltd 水晶発振回路
JP2000091845A (ja) * 1998-09-10 2000-03-31 Mitsubishi Electric Corp コルピッツ発振回路及び無線通信端末装置
JP2003017936A (ja) * 2001-06-28 2003-01-17 Kyocera Corp 電圧制御発振器
US6876266B2 (en) * 2002-06-10 2005-04-05 Gct Semiconductor, Inc. LC oscillator with wide tuning range and low phase noise

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JP2008098731A (ja) 2008-04-24
WO2008044747A1 (fr) 2008-04-17

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