TW200601486A - Method for forming device isolation film of semiconductor device - Google Patents

Method for forming device isolation film of semiconductor device

Info

Publication number
TW200601486A
TW200601486A TW093137686A TW93137686A TW200601486A TW 200601486 A TW200601486 A TW 200601486A TW 093137686 A TW093137686 A TW 093137686A TW 93137686 A TW93137686 A TW 93137686A TW 200601486 A TW200601486 A TW 200601486A
Authority
TW
Taiwan
Prior art keywords
nitride layer
forming
trench
pad
pad nitride
Prior art date
Application number
TW093137686A
Other languages
English (en)
Inventor
Hyung-Suk Choi
Bo-Ryeong Wi
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200601486A publication Critical patent/TW200601486A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
TW093137686A 2004-06-30 2004-12-07 Method for forming device isolation film of semiconductor device TW200601486A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040050253A KR20060001196A (ko) 2004-06-30 2004-06-30 반도체 소자의 소자 분리막 형성 방법

Publications (1)

Publication Number Publication Date
TW200601486A true TW200601486A (en) 2006-01-01

Family

ID=35514543

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093137686A TW200601486A (en) 2004-06-30 2004-12-07 Method for forming device isolation film of semiconductor device

Country Status (4)

Country Link
US (1) US20060003541A1 (zh)
KR (1) KR20060001196A (zh)
CN (1) CN1716565A (zh)
TW (1) TW200601486A (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100546161B1 (ko) * 2004-07-13 2006-01-24 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 제조 방법
JP2009266944A (ja) 2008-04-23 2009-11-12 Toshiba Corp 三次元積層不揮発性半導体メモリ
JP2009266946A (ja) 2008-04-23 2009-11-12 Toshiba Corp 三次元積層不揮発性半導体メモリ
JP5259242B2 (ja) 2008-04-23 2013-08-07 株式会社東芝 三次元積層不揮発性半導体メモリ
KR101053647B1 (ko) * 2009-12-29 2011-08-02 주식회사 하이닉스반도체 반도체 장치 제조 방법
JP2013058276A (ja) 2011-09-07 2013-03-28 Toshiba Corp 半導体記憶装置
US8962474B2 (en) * 2011-11-07 2015-02-24 Globalfoundries Singapore Pte. Ltd. Method for forming an air gap around a through-silicon via
US9006080B2 (en) * 2013-03-12 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Varied STI liners for isolation structures in image sensing devices
CN108110008B (zh) * 2016-11-25 2020-07-28 旺宏电子股份有限公司 半导体元件及其制造方法与存储器的制造方法
TWI647828B (zh) * 2017-07-10 2019-01-11 海華科技股份有限公司 可攜式電子裝置及其影像擷取模組與影像感測組件
US20210134744A1 (en) * 2019-11-05 2021-05-06 Nanya Technology Corporation Semiconductor device and method for fabricating the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981356A (en) * 1997-07-28 1999-11-09 Integrated Device Technology, Inc. Isolation trenches with protected corners
KR100346842B1 (ko) * 2000-12-01 2002-08-03 삼성전자 주식회사 얕은 트렌치 아이솔레이션 구조를 갖는 반도체 디바이스및 그 제조방법

Also Published As

Publication number Publication date
KR20060001196A (ko) 2006-01-06
US20060003541A1 (en) 2006-01-05
CN1716565A (zh) 2006-01-04

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