SG88687G - A semiconductor memory device - Google Patents

A semiconductor memory device

Info

Publication number
SG88687G
SG88687G SG886/87A SG88687A SG88687G SG 88687 G SG88687 G SG 88687G SG 886/87 A SG886/87 A SG 886/87A SG 88687 A SG88687 A SG 88687A SG 88687 G SG88687 G SG 88687G
Authority
SG
Singapore
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
SG886/87A
Other languages
English (en)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG88687G publication Critical patent/SG88687G/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
SG886/87A 1982-09-22 1987-10-12 A semiconductor memory device SG88687G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57163888A JPH0612619B2 (ja) 1982-09-22 1982-09-22 半導体メモリ装置

Publications (1)

Publication Number Publication Date
SG88687G true SG88687G (en) 1988-06-03

Family

ID=15782701

Family Applications (1)

Application Number Title Priority Date Filing Date
SG886/87A SG88687G (en) 1982-09-22 1987-10-12 A semiconductor memory device

Country Status (10)

Country Link
US (5) US4638460A (ja)
JP (1) JPH0612619B2 (ja)
KR (1) KR910009548B1 (ja)
DE (1) DE3330046A1 (ja)
FR (1) FR2533348B1 (ja)
GB (1) GB2128430B (ja)
HK (1) HK188A (ja)
IT (1) IT1168281B (ja)
MY (1) MY102019A (ja)
SG (1) SG88687G (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置
JPS6018948A (ja) * 1983-07-12 1985-01-31 Nec Corp 半導体集積回路装置
DE151898T1 (de) * 1984-01-05 1985-11-21 Mostek Corp., Carrollton, Tex. Verfahren und anordnung zur ausgleichung einer speicherzelle.
US5187685A (en) * 1985-11-22 1993-02-16 Hitachi, Ltd. Complementary MISFET voltage generating circuit for a semiconductor memory
JPH0789433B2 (ja) * 1985-11-22 1995-09-27 株式会社日立製作所 ダイナミツク型ｒａｍ
JP2610830B2 (ja) * 1986-07-01 1997-05-14 株式会社日立製作所 半導体記憶装置のメモリセルの極板電圧設定方法
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device
JP2606857B2 (ja) * 1987-12-10 1997-05-07 株式会社日立製作所 半導体記憶装置の製造方法
JP2535084B2 (ja) * 1990-02-19 1996-09-18 シャープ株式会社 半導体装置の製造方法
JPH04218959A (ja) * 1990-10-18 1992-08-10 Mitsubishi Electric Corp 半導体装置およびその制御方法
JPH06243678A (ja) * 1993-02-19 1994-09-02 Hitachi Ltd ダイナミック型ｒａｍとそのプレート電圧設定方法及び情報処理システム
JPH0794600A (ja) * 1993-06-29 1995-04-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5570317A (en) * 1994-07-19 1996-10-29 Intel Corporation Memory circuit with stress circuitry for detecting defects
JP2000056323A (ja) * 1998-08-12 2000-02-25 Hitachi Ltd 液晶表示装置
US6552887B1 (en) * 2000-06-29 2003-04-22 Intel Corporation Voltage dependent capacitor configuration for higher soft error rate tolerance
JP2003006041A (ja) * 2001-06-20 2003-01-10 Hitachi Ltd 半導体装置
US9633710B2 (en) * 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3893152A (en) * 1973-07-25 1975-07-01 Hung Chang Lin Metal nitride oxide semiconductor integrated circuit structure
US4240092A (en) * 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
JPS5457875A (en) * 1977-10-17 1979-05-10 Hitachi Ltd Semiconductor nonvolatile memory device
JPS607389B2 (ja) * 1978-12-26 1985-02-23 超エル・エス・アイ技術研究組合 半導体装置の製造方法
JPS5666065A (en) * 1979-11-01 1981-06-04 Mitsubishi Electric Corp Semiconductor memory unit
JPS5927102B2 (ja) * 1979-12-24 1984-07-03 富士通株式会社 半導体記憶装置
US4456978A (en) * 1980-02-12 1984-06-26 General Instrument Corp. Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process
US4458336A (en) * 1980-10-22 1984-07-03 Fujitsu Limited Semiconductor memory circuit
US4459684A (en) * 1981-06-02 1984-07-10 Texas Instruments Incorporated Nonvolatile JRAM cell using nonvolatile capacitance for information retrieval
JPS57111879A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
JPS57186354A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory storage and manufacture thereof
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置

Also Published As

Publication number Publication date
US4887237A (en) 1989-12-12
IT1168281B (it) 1987-05-20
GB8320218D0 (en) 1983-09-01
US4740920A (en) 1988-04-26
HK188A (en) 1988-01-15
JPH0612619B2 (ja) 1994-02-16
DE3330046A1 (de) 1984-03-22
GB2128430A (en) 1984-04-26
US5148392A (en) 1992-09-15
KR840005887A (ko) 1984-11-19
GB2128430B (en) 1986-11-26
JPS5954097A (ja) 1984-03-28
US4991137A (en) 1991-02-05
US4638460A (en) 1987-01-20
MY102019A (en) 1992-02-29
KR910009548B1 (ko) 1991-11-21
IT8322951A0 (it) 1983-09-21
FR2533348B1 (fr) 1991-10-31
FR2533348A1 (fr) 1984-03-23

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