JPS5666065A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5666065A
JPS5666065A JP14255279A JP14255279A JPS5666065A JP S5666065 A JPS5666065 A JP S5666065A JP 14255279 A JP14255279 A JP 14255279A JP 14255279 A JP14255279 A JP 14255279A JP S5666065 A JPS5666065 A JP S5666065A
Authority
JP
Japan
Prior art keywords
film
sio2
substrate
si3n4
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14255279A
Other languages
Japanese (ja)
Inventor
Makoto Hirayama
Koichi Nagasawa
Tatsuya Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14255279A priority Critical patent/JPS5666065A/en
Publication of JPS5666065A publication Critical patent/JPS5666065A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To eliminate the erroneous operation of memory to be caused by alpha particles from the outside when an MOSFET and an MOS diode type capacitor are to be formed being integrated in one body on a semiconductor substrate by a method wherein an insulating layer part to install the diode type capacitor is consisted of compound insulating layer of SiO2 and Si3N4. CONSTITUTION:A thick field oxide film 2 is formed at the circumferential part of the Si substrate 1, while the SiO2 film 9 and the Si3N4 film 8 are adhered in lamination on the active region of the substrate 1 and the whole surface is covered with an SiO2 film 10. The first polycrystalline Si film 4 is formed on the surface extending from the one side film 2 to the center part of the film 10, and is covered with a thick SiO2 film 5. Then etching is performed using the film 5 as a mask, and the exposing film 10 and then the films 8, 9 are removed in order. The second polycrystalline Si film 6 is adhered on the surface extending from the end part of the film 5 being reduced in the thickness but yet remaining to the center part of the exposing substrate 1. By this constitution, the film 5 is interposed between the film 6 to be used as the MOSFET and the film 4 to be used as the capacitor, and the SiO2 film and the Si3N4 film are located under the film 4.
JP14255279A 1979-11-01 1979-11-01 Semiconductor memory unit Pending JPS5666065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14255279A JPS5666065A (en) 1979-11-01 1979-11-01 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14255279A JPS5666065A (en) 1979-11-01 1979-11-01 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS5666065A true JPS5666065A (en) 1981-06-04

Family

ID=15317993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14255279A Pending JPS5666065A (en) 1979-11-01 1979-11-01 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5666065A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137245A (en) * 1982-02-10 1983-08-15 Hitachi Ltd Semiconductor memory and its manufacture
JPS58154256A (en) * 1982-03-10 1983-09-13 Hitachi Ltd Semiconductor memory and preparation thereof
JPS5954097A (en) * 1982-09-22 1984-03-28 Hitachi Ltd Semiconductor memory device
JPS6045054A (en) * 1983-08-22 1985-03-11 Nec Corp Manufacture of mis type semiconductor memory device
JPH02354A (en) * 1989-02-08 1990-01-05 Hitachi Ltd Large scale semiconductor memory and its manufacture
US5017982A (en) * 1988-11-15 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Capacitor in semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137245A (en) * 1982-02-10 1983-08-15 Hitachi Ltd Semiconductor memory and its manufacture
JPH0376583B2 (en) * 1982-02-10 1991-12-05 Hitachi Ltd
JPS58154256A (en) * 1982-03-10 1983-09-13 Hitachi Ltd Semiconductor memory and preparation thereof
JPH0376584B2 (en) * 1982-03-10 1991-12-05 Hitachi Ltd
JPS5954097A (en) * 1982-09-22 1984-03-28 Hitachi Ltd Semiconductor memory device
JPS6045054A (en) * 1983-08-22 1985-03-11 Nec Corp Manufacture of mis type semiconductor memory device
US5017982A (en) * 1988-11-15 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Capacitor in semiconductor device
JPH02354A (en) * 1989-02-08 1990-01-05 Hitachi Ltd Large scale semiconductor memory and its manufacture
JPH0426788B2 (en) * 1989-02-08 1992-05-08 Hitachi Ltd

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