SG188037A1 - Acoustic wave device - Google Patents
Acoustic wave device Download PDFInfo
- Publication number
- SG188037A1 SG188037A1 SG2012053997A SG2012053997A SG188037A1 SG 188037 A1 SG188037 A1 SG 188037A1 SG 2012053997 A SG2012053997 A SG 2012053997A SG 2012053997 A SG2012053997 A SG 2012053997A SG 188037 A1 SG188037 A1 SG 188037A1
- Authority
- SG
- Singapore
- Prior art keywords
- outer periphery
- film
- acoustic wave
- piezoelectric
- upper electrode
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000005540 biological transmission Effects 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 238000010897 surface acoustic wave method Methods 0.000 claims description 5
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011174290A JP5792554B2 (ja) | 2011-08-09 | 2011-08-09 | 弾性波デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
SG188037A1 true SG188037A1 (en) | 2013-03-28 |
Family
ID=47646672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012053997A SG188037A1 (en) | 2011-08-09 | 2012-07-20 | Acoustic wave device |
Country Status (4)
Country | Link |
---|---|
US (1) | US9184725B2 (ja) |
JP (1) | JP5792554B2 (ja) |
CN (1) | CN102931942B (ja) |
SG (1) | SG188037A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8941286B2 (en) * | 2012-02-14 | 2015-01-27 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
CN103166596B (zh) * | 2013-04-11 | 2016-06-08 | 天津大学 | 谐振器和滤波器 |
JP6185292B2 (ja) | 2013-06-10 | 2017-08-23 | 太陽誘電株式会社 | 弾性波デバイス |
JP6241684B2 (ja) * | 2014-01-17 | 2017-12-06 | 株式会社村田製作所 | 圧電振動子及び圧電振動装置 |
CN105874708B (zh) | 2014-01-17 | 2018-05-22 | 株式会社村田制作所 | Mems元件 |
JP6510987B2 (ja) * | 2016-01-14 | 2019-05-08 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
JP6510996B2 (ja) | 2016-03-04 | 2019-05-08 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
KR20170141386A (ko) * | 2016-06-15 | 2017-12-26 | 삼성전기주식회사 | 탄성파 필터 장치 |
JP6538007B2 (ja) | 2016-06-29 | 2019-07-03 | 太陽誘電株式会社 | 弾性波デバイス |
KR102680008B1 (ko) * | 2016-08-12 | 2024-07-02 | 삼성전기주식회사 | 체적 음향 공진기 |
KR20180080875A (ko) * | 2017-01-05 | 2018-07-13 | 삼성전기주식회사 | 음향 공진기 및 그 제조방법 |
JP6886357B2 (ja) | 2017-07-03 | 2021-06-16 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
JP2020096226A (ja) * | 2018-12-10 | 2020-06-18 | 太陽誘電株式会社 | 弾性波デバイス、フィルタおよびマルチプレクサ |
CN111010103A (zh) * | 2019-05-31 | 2020-04-14 | 天津大学 | 带多层突起结构的谐振器及其制造方法、滤波器及电子设备 |
CN113131896B (zh) * | 2019-12-31 | 2024-04-30 | 中芯集成电路(宁波)有限公司 | 一种薄膜压电声波谐振器及其制造方法及滤波器 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58137317A (ja) | 1982-02-09 | 1983-08-15 | Nec Corp | 圧電薄膜複合振動子 |
JPS6016010A (ja) * | 1983-07-07 | 1985-01-26 | Nec Corp | 圧電薄膜複合振動子 |
US6441539B1 (en) | 1999-11-11 | 2002-08-27 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator |
JP3514222B2 (ja) * | 1999-11-17 | 2004-03-31 | 株式会社村田製作所 | 圧電共振子、電子部品及び電子機器 |
US6452310B1 (en) * | 2000-01-18 | 2002-09-17 | Texas Instruments Incorporated | Thin film resonator and method |
JP2003051732A (ja) * | 2001-08-08 | 2003-02-21 | Murata Mfg Co Ltd | 圧電共振子、フィルタおよび電子通信機器 |
JP3952464B2 (ja) * | 2002-02-27 | 2007-08-01 | Tdk株式会社 | デュプレクサ |
JP2005318365A (ja) * | 2004-04-30 | 2005-11-10 | Seiko Epson Corp | 圧電薄膜共振子、フィルタ及び圧電薄膜共振子の製造方法 |
JP4280198B2 (ja) | 2004-04-30 | 2009-06-17 | 株式会社東芝 | 薄膜圧電共振器 |
TW200610266A (en) * | 2004-06-03 | 2006-03-16 | Sony Corp | Thin film bulk acoustic resonator and method of manufacturing the same |
JP2006020277A (ja) * | 2004-06-03 | 2006-01-19 | Sony Corp | 薄膜バルク音響共振器及びその製造方法 |
DE102004031397A1 (de) * | 2004-06-29 | 2006-01-26 | Epcos Ag | Duplexer |
US7446629B2 (en) | 2004-08-04 | 2008-11-04 | Matsushita Electric Industrial Co., Ltd. | Antenna duplexer, and RF module and communication apparatus using the same |
JP4504278B2 (ja) * | 2004-08-04 | 2010-07-14 | パナソニック株式会社 | アンテナ共用器、ならびに、それを用いた高周波モジュールおよび通信機器 |
JP4535841B2 (ja) | 2004-10-28 | 2010-09-01 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子及びこれを用いたフィルタ |
JP4149444B2 (ja) | 2005-01-12 | 2008-09-10 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子及びこれを用いたフィルタ |
JP2006319796A (ja) * | 2005-05-13 | 2006-11-24 | Toshiba Corp | 薄膜バルク波音響共振器 |
US7561009B2 (en) * | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
JP4252584B2 (ja) * | 2006-04-28 | 2009-04-08 | 富士通メディアデバイス株式会社 | 圧電薄膜共振器およびフィルタ |
JP4719623B2 (ja) * | 2006-05-31 | 2011-07-06 | 太陽誘電株式会社 | フィルタ |
JP4968900B2 (ja) * | 2006-10-17 | 2012-07-04 | 太陽誘電株式会社 | ラダー型フィルタの製造方法 |
WO2009011022A1 (ja) * | 2007-07-13 | 2009-01-22 | Fujitsu Limited | 圧電薄膜共振素子及びこれを用いた回路部品 |
JP5279068B2 (ja) * | 2008-02-15 | 2013-09-04 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、通信モジュール、および通信装置 |
JP2008236795A (ja) * | 2008-06-13 | 2008-10-02 | Toshiba Corp | 薄膜圧電共振器の製造方法 |
JP5226409B2 (ja) | 2008-07-17 | 2013-07-03 | 太陽誘電株式会社 | 共振デバイス、通信モジュール、通信装置、共振デバイスの製造方法 |
WO2010007805A1 (ja) * | 2008-07-17 | 2010-01-21 | 株式会社 村田製作所 | 分波器 |
JP5322597B2 (ja) | 2008-11-13 | 2013-10-23 | 太陽誘電株式会社 | 共振子、フィルタ、デュープレクサおよび電子装置 |
US9209776B2 (en) * | 2009-06-30 | 2015-12-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of manufacturing an electrical resonator |
US8796904B2 (en) * | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
JP2011160232A (ja) * | 2010-02-01 | 2011-08-18 | Ube Industries Ltd | 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ |
US8253513B2 (en) * | 2010-03-16 | 2012-08-28 | Hao Zhang | Temperature compensated thin film acoustic wave resonator |
US9479139B2 (en) * | 2010-04-29 | 2016-10-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
US8350445B1 (en) * | 2011-06-16 | 2013-01-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer and bridge |
US8330325B1 (en) * | 2011-06-16 | 2012-12-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer |
JP2013038471A (ja) | 2011-08-03 | 2013-02-21 | Taiyo Yuden Co Ltd | 弾性波フィルタ |
-
2011
- 2011-08-09 JP JP2011174290A patent/JP5792554B2/ja active Active
-
2012
- 2012-07-20 SG SG2012053997A patent/SG188037A1/en unknown
- 2012-07-24 US US13/556,865 patent/US9184725B2/en active Active
- 2012-08-09 CN CN201210282502.9A patent/CN102931942B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP5792554B2 (ja) | 2015-10-14 |
US9184725B2 (en) | 2015-11-10 |
CN102931942B (zh) | 2015-10-21 |
US20130038405A1 (en) | 2013-02-14 |
JP2013038658A (ja) | 2013-02-21 |
CN102931942A (zh) | 2013-02-13 |
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