SG11201811626TA - Method and sample holder for the controlled bonding of substrates - Google Patents
Method and sample holder for the controlled bonding of substratesInfo
- Publication number
- SG11201811626TA SG11201811626TA SG11201811626TA SG11201811626TA SG11201811626TA SG 11201811626T A SG11201811626T A SG 11201811626TA SG 11201811626T A SG11201811626T A SG 11201811626TA SG 11201811626T A SG11201811626T A SG 11201811626TA SG 11201811626T A SG11201811626T A SG 11201811626TA
- Authority
- SG
- Singapore
- Prior art keywords
- substrates
- sample holder
- controlled bonding
- bonding
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Combinations Of Printed Boards (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2016/069307 WO2018028801A1 (de) | 2016-08-12 | 2016-08-12 | Verfahren und probenhalter zum gesteuerten bonden von substraten |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201811626TA true SG11201811626TA (en) | 2019-03-28 |
Family
ID=56852227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201811626TA SG11201811626TA (en) | 2016-08-12 | 2016-08-12 | Method and sample holder for the controlled bonding of substrates |
Country Status (8)
Country | Link |
---|---|
US (1) | US10991609B2 (zh) |
EP (1) | EP3497712B1 (zh) |
JP (1) | JP6899891B2 (zh) |
KR (2) | KR102347321B1 (zh) |
CN (1) | CN109496345B (zh) |
SG (1) | SG11201811626TA (zh) |
TW (2) | TWI649826B (zh) |
WO (1) | WO2018028801A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201906510PA (en) | 2017-03-02 | 2019-08-27 | Ev Group E Thallner Gmbh | Method and device for bonding chips |
AT525844A1 (de) * | 2019-05-13 | 2023-07-15 | Suss Microtec Lithography Gmbh | Bondvorrichtung sowie Verfahren zum Bonden von Substraten |
KR20220007687A (ko) | 2019-05-13 | 2022-01-18 | 수스 마이크로텍 리소그라피 게엠바하 | 본딩 장치 및 기판을 본딩하기 위한 방법 |
SG11201911798UA (en) | 2019-08-23 | 2021-04-29 | Ev Group E Thallner Gmbh | Method and device for the alignment of substrates |
CN115605987A (zh) | 2020-06-29 | 2023-01-13 | Ev 集团 E·索尔纳有限责任公司(At) | 基底保持器以及用于固定和键合基底的方法 |
KR20220167376A (ko) | 2020-06-29 | 2022-12-20 | 에베 그룹 에. 탈너 게엠베하 | 기판 접합 방법 및 장치 |
US20230369095A1 (en) | 2021-02-01 | 2023-11-16 | Ev Group E. Thallner Gmbh | Substrate holder and method for producing a substrate holder for bonding |
WO2024002494A1 (de) * | 2022-07-01 | 2024-01-04 | Ev Group E. Thallner Gmbh | Verfahren zum bonden eines ersten substrats mit einem zweiten substrat, vorrichtung zum bonden und anordnung aus erstem und zweitem substrat |
WO2024046577A1 (de) | 2022-09-02 | 2024-03-07 | Ev Group E. Thallner Gmbh | Verfahren und vorrichtung zum beeinflussen einer bondwelle beim bonden |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752180A (en) * | 1985-02-14 | 1988-06-21 | Kabushiki Kaisha Toshiba | Method and apparatus for handling semiconductor wafers |
JPH0766092B2 (ja) | 1988-09-30 | 1995-07-19 | 富士通株式会社 | モード変換コード |
JPH0744135B2 (ja) * | 1989-08-28 | 1995-05-15 | 株式会社東芝 | 半導体基板の接着方法及び接着装置 |
US5149827A (en) * | 1990-01-10 | 1992-09-22 | Nippon Shokubai Kagaku Kogyo Co., Ltd. | Method for handling maleimides |
JPH0766092A (ja) * | 1993-08-23 | 1995-03-10 | Sumitomo Sitix Corp | 半導体ウエーハの接着方法および接着治具 |
JPH0766093A (ja) * | 1993-08-23 | 1995-03-10 | Sumitomo Sitix Corp | 半導体ウエーハの貼り合わせ方法およびその装置 |
JPH1174164A (ja) * | 1997-08-27 | 1999-03-16 | Canon Inc | 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法 |
AT405775B (de) | 1998-01-13 | 1999-11-25 | Thallner Erich | Verfahren und vorrichtung zum ausgerichteten zusammenführen von scheibenförmigen halbleitersubstraten |
KR100744183B1 (ko) * | 2006-02-16 | 2007-08-01 | 삼성전자주식회사 | 디스플레이장치의 제조장치 및 제조방법 |
US7682933B1 (en) * | 2007-09-26 | 2010-03-23 | The United States Of America As Represented By The Secretary Of The Air Force | Wafer alignment and bonding |
SG187694A1 (en) | 2010-12-20 | 2013-03-28 | Ev Group E Thallner Gmbh | Receiving means for mounting of wafers |
DE102010055288A1 (de) | 2010-12-21 | 2012-06-21 | Ev Group Gmbh | Vorrichtung zum spanenden Bearbeiten eines Werkstücks |
JP2012186245A (ja) * | 2011-03-04 | 2012-09-27 | Tokyo Electron Ltd | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
EP3005407B1 (de) * | 2013-05-29 | 2018-08-15 | EV Group E. Thallner GmbH | Verfahren zum bonden von substraten |
WO2014202106A1 (de) | 2013-06-17 | 2014-12-24 | Ev Group E. Thallner Gmbh | Vorrichtung und verfahren zum ausrichten von substraten |
JP6120749B2 (ja) * | 2013-10-25 | 2017-04-26 | 東京エレクトロン株式会社 | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム |
US9851645B2 (en) | 2013-12-06 | 2017-12-26 | Ev Group E. Thallner Gmbh | Device and method for aligning substrates |
KR101521971B1 (ko) * | 2013-12-11 | 2015-05-20 | 주식회사 휴템 | 플라즈마 활성화 처리를 이용한 웨이퍼 본더, 웨이퍼 접합 장치, 및 웨이퍼 접합 방법 |
JP2014150266A (ja) * | 2014-03-13 | 2014-08-21 | Tokyo Electron Ltd | 接合装置及び接合システム |
JP6177739B2 (ja) * | 2014-08-07 | 2017-08-09 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
JP6271404B2 (ja) * | 2014-11-27 | 2018-01-31 | 東京エレクトロン株式会社 | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム |
KR20230009995A (ko) | 2014-12-10 | 2023-01-17 | 가부시키가이샤 니콘 | 기판 겹침 장치 및 기판 겹침 방법 |
CN118098939A (zh) | 2016-03-22 | 2024-05-28 | Ev 集团 E·索尔纳有限责任公司 | 用于衬底的接合的装置和方法 |
-
2016
- 2016-08-12 CN CN201680087883.1A patent/CN109496345B/zh active Active
- 2016-08-12 SG SG11201811626TA patent/SG11201811626TA/en unknown
- 2016-08-12 EP EP16759690.7A patent/EP3497712B1/de active Active
- 2016-08-12 WO PCT/EP2016/069307 patent/WO2018028801A1/de unknown
- 2016-08-12 US US16/321,496 patent/US10991609B2/en active Active
- 2016-08-12 KR KR1020217028352A patent/KR102347321B1/ko active IP Right Grant
- 2016-08-12 JP JP2019502747A patent/JP6899891B2/ja active Active
- 2016-08-12 KR KR1020197001389A patent/KR102300481B1/ko active IP Right Grant
-
2017
- 2017-08-03 TW TW106126165A patent/TWI649826B/zh active
- 2017-08-03 TW TW107138845A patent/TWI681488B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP3497712A1 (de) | 2019-06-19 |
KR102300481B1 (ko) | 2021-09-10 |
TWI681488B (zh) | 2020-01-01 |
JP2019533897A (ja) | 2019-11-21 |
TW201903940A (zh) | 2019-01-16 |
KR20190037231A (ko) | 2019-04-05 |
EP3497712B1 (de) | 2020-04-29 |
TW201826425A (zh) | 2018-07-16 |
KR102347321B1 (ko) | 2022-01-04 |
US20200027768A1 (en) | 2020-01-23 |
WO2018028801A1 (de) | 2018-02-15 |
CN109496345B (zh) | 2023-07-18 |
TWI649826B (zh) | 2019-02-01 |
KR20210113693A (ko) | 2021-09-16 |
JP6899891B2 (ja) | 2021-07-07 |
US10991609B2 (en) | 2021-04-27 |
CN109496345A (zh) | 2019-03-19 |
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