SG11201805655VA - Method and device for bonding substrates - Google Patents

Method and device for bonding substrates

Info

Publication number
SG11201805655VA
SG11201805655VA SG11201805655VA SG11201805655VA SG11201805655VA SG 11201805655V A SG11201805655V A SG 11201805655VA SG 11201805655V A SG11201805655V A SG 11201805655VA SG 11201805655V A SG11201805655V A SG 11201805655VA SG 11201805655V A SG11201805655V A SG 11201805655VA
Authority
SG
Singapore
Prior art keywords
bonding substrates
substrates
bonding
proposed
Prior art date
Application number
SG11201805655VA
Inventor
Thomas Wagenleitner
Andreas Fehkührer
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of SG11201805655VA publication Critical patent/SG11201805655VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)

Abstract

Method and device for bonding substrates A method and a device for bonding two substrates is proposed. Figure 1.
SG11201805655VA 2016-02-16 2016-02-16 Method and device for bonding substrates SG11201805655VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2016/053268 WO2017140347A1 (en) 2016-02-16 2016-02-16 Method and device for bonding substrates

Publications (1)

Publication Number Publication Date
SG11201805655VA true SG11201805655VA (en) 2018-07-30

Family

ID=55442775

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201805655VA SG11201805655VA (en) 2016-02-16 2016-02-16 Method and device for bonding substrates

Country Status (8)

Country Link
US (4) US10755929B2 (en)
EP (2) EP3417477B1 (en)
JP (1) JP6745886B2 (en)
KR (3) KR102494914B1 (en)
CN (4) CN117690823A (en)
SG (1) SG11201805655VA (en)
TW (2) TWI647050B (en)
WO (1) WO2017140347A1 (en)

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KR102541696B1 (en) 2016-09-29 2023-06-08 에베 그룹 에. 탈너 게엠베하 Apparatus and method for bonding two substrates
KR20190119031A (en) 2017-03-02 2019-10-21 에베 그룹 에. 탈너 게엠베하 Method and device for bonding chips
US10497667B2 (en) * 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control
US11664357B2 (en) 2018-07-03 2023-05-30 Adeia Semiconductor Bonding Technologies Inc. Techniques for joining dissimilar materials in microelectronics
KR102483443B1 (en) * 2018-08-14 2023-01-04 삼성전자주식회사 Wafer bonding device, a wafer bonding apparatus for directly bonding wafers using the same and a method of bonding wafers in the wafer bonding apparatus
CN115943489A (en) * 2020-03-19 2023-04-07 隔热半导体粘合技术公司 Dimension compensation control for direct bonded structures
JP2021180298A (en) * 2020-05-15 2021-11-18 東京エレクトロン株式会社 Joining device and joining method
CN112038220B (en) * 2020-08-31 2023-02-03 上海华力集成电路制造有限公司 Method for improving wafer edge deformation in wafer bonding process
KR20220077601A (en) * 2020-12-02 2022-06-09 엘지디스플레이 주식회사 Led transfer method and method for manufacturing display device using the same
US11834332B2 (en) * 2021-08-06 2023-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Bond wave optimization method and device

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JPH07266350A (en) 1994-03-31 1995-10-17 Kyushu Henatsuki Kk Method and apparatus for insert molding of magnetic element
JPH1174164A (en) 1997-08-27 1999-03-16 Canon Inc Wafer-processing device, wafer support device, wafer-processing method, and manufacture of wafer
US7161121B1 (en) 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US6666928B2 (en) 2001-09-13 2003-12-23 Micell Technologies, Inc. Methods and apparatus for holding a substrate in a pressure chamber
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WO2007047536A2 (en) * 2005-10-14 2007-04-26 Silicon Genesis Corporation Method and apparatus for flag-less wafer bonding tool
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Also Published As

Publication number Publication date
US20210343530A1 (en) 2021-11-04
CN117612967A (en) 2024-02-27
KR102494914B1 (en) 2023-02-01
US10755929B2 (en) 2020-08-25
JP6745886B2 (en) 2020-08-26
TWI647050B (en) 2019-01-11
KR102580005B1 (en) 2023-09-18
TWI702107B (en) 2020-08-21
EP3417477A1 (en) 2018-12-26
EP3417477B1 (en) 2020-01-29
KR20230137479A (en) 2023-10-04
US20200203165A1 (en) 2020-06-25
CN109075037B (en) 2023-11-07
WO2017140347A1 (en) 2017-08-24
US11101132B2 (en) 2021-08-24
US20190148148A1 (en) 2019-05-16
KR20230022259A (en) 2023-02-14
CN117690823A (en) 2024-03-12
TW201919812A (en) 2019-06-01
US20200286733A1 (en) 2020-09-10
US10755930B2 (en) 2020-08-25
CN117373954A (en) 2024-01-09
US11742205B2 (en) 2023-08-29
CN109075037A (en) 2018-12-21
KR20180114896A (en) 2018-10-19
EP3640971A1 (en) 2020-04-22
TW201739561A (en) 2017-11-16
JP2019509627A (en) 2019-04-04

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