SG11201808444VA - Method and device for bonding two substrates - Google Patents

Method and device for bonding two substrates

Info

Publication number
SG11201808444VA
SG11201808444VA SG11201808444VA SG11201808444VA SG11201808444VA SG 11201808444V A SG11201808444V A SG 11201808444VA SG 11201808444V A SG11201808444V A SG 11201808444VA SG 11201808444V A SG11201808444V A SG 11201808444VA SG 11201808444V A SG11201808444V A SG 11201808444VA
Authority
SG
Singapore
Prior art keywords
substrates
bonding
relates
Prior art date
Application number
SG11201808444VA
Inventor
Andreas Fehkührer
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of SG11201808444VA publication Critical patent/SG11201808444VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Combinations Of Printed Boards (AREA)
  • Liquid Crystal (AREA)

Abstract

Method and device for bonding two substrates The invention relates to a method and a device for bonding two substrates. (Fig. 1a)
SG11201808444VA 2016-04-07 2017-04-04 Method and device for bonding two substrates SG11201808444VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016106351.7A DE102016106351A1 (en) 2016-04-07 2016-04-07 Method and device for bonding two substrates
PCT/EP2017/057969 WO2017174570A1 (en) 2016-04-07 2017-04-04 Method and device for bonding two substrates

Publications (1)

Publication Number Publication Date
SG11201808444VA true SG11201808444VA (en) 2018-10-30

Family

ID=58489332

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201808444VA SG11201808444VA (en) 2016-04-07 2017-04-04 Method and device for bonding two substrates

Country Status (9)

Country Link
US (1) US20190109034A1 (en)
EP (1) EP3440695B1 (en)
JP (1) JP2019514199A (en)
KR (1) KR20180133848A (en)
CN (1) CN108886015A (en)
DE (1) DE102016106351A1 (en)
SG (1) SG11201808444VA (en)
TW (1) TWI774671B (en)
WO (1) WO2017174570A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3052098B1 (en) * 2016-06-03 2019-08-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR MANUFACTURING HANDLING DEVICE, HANDLING DEVICE, AND REVERSIBLE BONDING METHOD USING SUCH DEVICE
DE102016122803A1 (en) * 2016-11-25 2018-05-30 Osram Oled Gmbh METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT
CN109473532B (en) * 2018-11-20 2020-11-06 合肥京东方光电科技有限公司 Manufacturing method of Micro LED display substrate
WO2020178080A1 (en) * 2019-03-05 2020-09-10 Evatec Ag Method for processing fragile substrates employing temporary bonding of the substrates to carriers
WO2021092376A1 (en) * 2019-11-08 2021-05-14 Mosaic Microsystems Llc Processed inorganic wafer and processing wafer stack with abrasive process
WO2021131080A1 (en) * 2019-12-27 2021-07-01 ボンドテック株式会社 Joining method, item to be joined, and joining device
CN111303781B (en) * 2020-04-03 2022-03-11 江西欧迈斯微电子有限公司 Bonding module and manufacturing method thereof
CN113644020B (en) * 2021-10-15 2021-12-21 浙江集迈科微电子有限公司 Semiconductor bonding structure and preparation method thereof

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2823596B1 (en) * 2001-04-13 2004-08-20 Commissariat Energie Atomique SUBSTRATE OR DISMOUNTABLE STRUCTURE AND METHOD OF MAKING SAME
JP4682883B2 (en) * 2006-03-10 2011-05-11 株式会社豊田自動織機 Method for dividing bonded substrates
US9111981B2 (en) * 2008-01-24 2015-08-18 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
EP2402981B1 (en) 2009-03-18 2013-07-10 EV Group GmbH Device and method for releasing a wafer from a holder
US8267143B2 (en) 2009-04-16 2012-09-18 Suss Microtec Lithography, Gmbh Apparatus for mechanically debonding temporary bonded semiconductor wafers
DE102009018156A1 (en) 2009-04-21 2010-11-18 Ev Group Gmbh Apparatus and method for separating a substrate from a carrier substrate
US8852391B2 (en) * 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
TW201207070A (en) * 2010-07-05 2012-02-16 Nitto Denko Corp Active energy ray-curable pressure-sensitive adhesive for re-release and dicing die-bonding film
US9263314B2 (en) * 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
WO2013006865A2 (en) * 2011-07-07 2013-01-10 Brewer Science Inc. Methods of transferring device wafers or layers between carrier substrates and other surfaces
JP5962395B2 (en) * 2011-09-28 2016-08-03 Jsr株式会社 Method for temporarily fixing substrate, semiconductor device, and composition for temporary fixing
DE102012101237A1 (en) * 2012-02-16 2013-08-22 Ev Group E. Thallner Gmbh A method for temporarily connecting a product substrate to a carrier substrate
CN104471009B (en) 2012-05-07 2017-09-12 独立行政法人产业技术综合研究所 Photosensitive adhesive
EP2717307A1 (en) * 2012-10-04 2014-04-09 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Releasable substrate on a carrier
JP6170672B2 (en) * 2012-12-27 2017-07-26 富士フイルム株式会社 Temporary adhesive for manufacturing semiconductor device, adhesive support using the same, and method for manufacturing semiconductor device
JP6153337B2 (en) * 2013-02-06 2017-06-28 株式会社ディスコ UV irradiation equipment
US9093489B2 (en) * 2013-03-15 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Selective curing method of adhesive on substrate
CN103280423A (en) * 2013-05-29 2013-09-04 华进半导体封装先导技术研发中心有限公司 Technology and system for mechanical bonding disassembling
US8962449B1 (en) * 2013-07-30 2015-02-24 Micron Technology, Inc. Methods for processing semiconductor devices
TW201522072A (en) * 2013-12-11 2015-06-16 Jun-Xing Xin Suede-like synthetic leather and manufacturing method thereof
TWI655264B (en) * 2014-08-07 2019-04-01 美商3M新設資產公司 Rework device, rework method, and rework solution for electronic device

Also Published As

Publication number Publication date
JP2019514199A (en) 2019-05-30
EP3440695A1 (en) 2019-02-13
WO2017174570A1 (en) 2017-10-12
TWI774671B (en) 2022-08-21
DE102016106351A1 (en) 2017-10-12
US20190109034A1 (en) 2019-04-11
EP3440695B1 (en) 2019-10-02
CN108886015A (en) 2018-11-23
KR20180133848A (en) 2018-12-17
TW201802989A (en) 2018-01-16

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