SG11201805276VA - METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE - Google Patents

METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE

Info

Publication number
SG11201805276VA
SG11201805276VA SG11201805276VA SG11201805276VA SG11201805276VA SG 11201805276V A SG11201805276V A SG 11201805276VA SG 11201805276V A SG11201805276V A SG 11201805276VA SG 11201805276V A SG11201805276V A SG 11201805276VA SG 11201805276V A SG11201805276V A SG 11201805276VA
Authority
SG
Singapore
Prior art keywords
growth furnace
monocrystal growth
sic monocrystal
sic
vol
Prior art date
Application number
SG11201805276VA
Inventor
Yosuke Tanimoto
Hideyuki Kurihara
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of SG11201805276VA publication Critical patent/SG11201805276VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Abstract

This method of cleaning a SiC monocrystal growth furnace uses a gas to clean a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least I vol% but not more than 20 vol% of fluorine gas, and at least 80 vol% but not more than 99 vol% of an inert gas, and a temperature inside the SiC monocrystal growth furnace is at least 200°C but not more than 500°C.
SG11201805276VA 2015-12-28 2016-12-26 METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE SG11201805276VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015256287 2015-12-28
PCT/JP2016/088697 WO2017115750A1 (en) 2015-12-28 2016-12-26 METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE

Publications (1)

Publication Number Publication Date
SG11201805276VA true SG11201805276VA (en) 2018-07-30

Family

ID=59224725

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201805276VA SG11201805276VA (en) 2015-12-28 2016-12-26 METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE

Country Status (8)

Country Link
US (1) US11028474B2 (en)
EP (1) EP3399076B1 (en)
JP (1) JP6964520B2 (en)
KR (1) KR102136942B1 (en)
CN (1) CN108541278B (en)
SG (1) SG11201805276VA (en)
TW (1) TWI637072B (en)
WO (1) WO2017115750A1 (en)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562183B1 (en) 1999-04-07 2003-05-13 Ngk Insulators, Ltd. Anti-corrosive parts for etching apparatus
JP2000355779A (en) * 1999-04-07 2000-12-26 Ngk Insulators Ltd Corrosion resistant parts of etching device
JP2001267241A (en) * 2000-03-10 2001-09-28 L'air Liquide Method and apparatus for cleaning, and method and apparatus for etching
US20030216041A1 (en) * 2002-05-08 2003-11-20 Herring Robert B. In-situ thermal chamber cleaning
JP4102876B2 (en) 2003-01-27 2008-06-18 独立行政法人産業技術総合研究所 Single crystal growth equipment
JP4531833B2 (en) 2007-12-05 2010-08-25 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and cleaning method
US8136354B2 (en) * 2008-03-14 2012-03-20 Energy Compression Inc. Adsorption-enhanced compressed air energy storage
JP2012019081A (en) * 2010-07-08 2012-01-26 Hitachi Kokusai Electric Inc Substrate treatment apparatus, semiconductor device manufacturing method and substrate manufacturing method
JP5542560B2 (en) * 2010-07-20 2014-07-09 株式会社ニューフレアテクノロジー Semiconductor manufacturing apparatus and susceptor cleaning method
JP5698043B2 (en) 2010-08-04 2015-04-08 株式会社ニューフレアテクノロジー Semiconductor manufacturing equipment
CN103282557B (en) 2010-12-24 2017-02-15 东洋炭素株式会社 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
JP5700538B2 (en) * 2011-03-29 2015-04-15 東京エレクトロン株式会社 Thin film forming apparatus cleaning method, thin film forming method, and thin film forming apparatus
TW201341572A (en) * 2011-12-22 2013-10-16 Solvay Plasma apparatus and a method for cleaning a chamber
JP5933347B2 (en) 2012-06-04 2016-06-08 大陽日酸株式会社 Silicon carbide removal method
JP6107198B2 (en) 2013-02-14 2017-04-05 セントラル硝子株式会社 Cleaning gas and cleaning method
JP6232680B2 (en) 2013-09-06 2017-11-22 大陽日酸株式会社 How to clean the susceptor

Also Published As

Publication number Publication date
US20190003046A1 (en) 2019-01-03
US11028474B2 (en) 2021-06-08
EP3399076A1 (en) 2018-11-07
WO2017115750A1 (en) 2017-07-06
KR102136942B1 (en) 2020-07-22
EP3399076A4 (en) 2019-08-21
TWI637072B (en) 2018-10-01
JPWO2017115750A1 (en) 2018-10-18
TW201736623A (en) 2017-10-16
CN108541278B (en) 2022-03-08
JP6964520B2 (en) 2021-11-10
KR20180084979A (en) 2018-07-25
EP3399076B1 (en) 2022-05-11
CN108541278A (en) 2018-09-14

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