SG11201803914QA - Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor Wafer - Google Patents
Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor WaferInfo
- Publication number
- SG11201803914QA SG11201803914QA SG11201803914QA SG11201803914QA SG11201803914QA SG 11201803914Q A SG11201803914Q A SG 11201803914QA SG 11201803914Q A SG11201803914Q A SG 11201803914QA SG 11201803914Q A SG11201803914Q A SG 11201803914QA SG 11201803914Q A SG11201803914Q A SG 11201803914QA
- Authority
- SG
- Singapore
- Prior art keywords
- coating
- semiconductor wafer
- etching
- epitaxy reactor
- semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015225663.4A DE102015225663A1 (de) | 2015-12-17 | 2015-12-17 | Verfahren zum epitaktischen Beschichten von Halbleiterscheiben und Halbleiterscheibe |
PCT/EP2016/080494 WO2017102597A1 (de) | 2015-12-17 | 2016-12-09 | Verfahren zum epitaktischen beschichten von halbleiterscheiben und halbleiterscheibe |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201803914QA true SG11201803914QA (en) | 2018-06-28 |
Family
ID=57543031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201803914QA SG11201803914QA (en) | 2015-12-17 | 2016-12-09 | Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor Wafer |
Country Status (9)
Country | Link |
---|---|
US (1) | US10961638B2 (de) |
EP (1) | EP3390698B1 (de) |
JP (1) | JP6697558B2 (de) |
KR (1) | KR102210290B1 (de) |
CN (1) | CN108474133B (de) |
DE (1) | DE102015225663A1 (de) |
SG (1) | SG11201803914QA (de) |
TW (1) | TWI625781B (de) |
WO (1) | WO2017102597A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016210203B3 (de) * | 2016-06-09 | 2017-08-31 | Siltronic Ag | Suszeptor zum Halten einer Halbleiterscheibe, Verfahren zum Abscheiden einer epitaktischen Schicht auf einer Vorderseite einer Halbleiterscheibe und Halbleiterscheibe mit epitaktischer Schicht |
DE102018200415A1 (de) * | 2018-01-11 | 2019-07-11 | Siltronic Ag | Halbleiterscheibe mit epitaktischer Schicht |
CN110189991A (zh) * | 2019-04-30 | 2019-08-30 | 上海新昇半导体科技有限公司 | 一种外延片的制造方法 |
CN111893567B (zh) * | 2020-07-03 | 2022-02-22 | 北京北方华创微电子装备有限公司 | 气相沉积腔室 |
JP7342815B2 (ja) * | 2020-07-30 | 2023-09-12 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
CN112164649A (zh) * | 2020-09-28 | 2021-01-01 | 长江存储科技有限责任公司 | 半导体结构的刻蚀方法 |
EP4074861A1 (de) | 2021-04-13 | 2022-10-19 | Siltronic AG | Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer |
EP4075488B1 (de) | 2021-04-13 | 2024-02-28 | Siltronic AG | Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer |
CN115198352B (zh) * | 2022-08-24 | 2024-03-26 | 西安奕斯伟材料科技股份有限公司 | 一种外延生长方法及外延晶圆 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7812388A (nl) * | 1978-12-21 | 1980-06-24 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
JP3908112B2 (ja) * | 2002-07-29 | 2007-04-25 | Sumco Techxiv株式会社 | サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法 |
DE10302611B4 (de) * | 2003-01-23 | 2011-07-07 | Siltronic AG, 81737 | Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild |
US7288284B2 (en) | 2004-03-26 | 2007-10-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Post-cleaning chamber seasoning method |
DE102005045339B4 (de) | 2005-09-22 | 2009-04-02 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
DE102005045338B4 (de) | 2005-09-22 | 2009-04-02 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
US9064960B2 (en) | 2007-01-31 | 2015-06-23 | Applied Materials, Inc. | Selective epitaxy process control |
US20090162997A1 (en) * | 2007-12-21 | 2009-06-25 | Deacon Thomas E | Thin diamond like coating for semiconductor processing equipment |
JP5151674B2 (ja) | 2008-05-19 | 2013-02-27 | 信越半導体株式会社 | エピタキシャルウエーハの製造方法 |
DE102009004557B4 (de) * | 2009-01-14 | 2018-03-08 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
DE102009022224B4 (de) * | 2009-05-20 | 2012-09-13 | Siltronic Ag | Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
US9011599B2 (en) * | 2010-07-14 | 2015-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of temperature determination for deposition reactors |
JP5644401B2 (ja) | 2010-11-15 | 2014-12-24 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
CN106716649A (zh) * | 2014-09-19 | 2017-05-24 | 应用材料公司 | 平行板式串联基板处理工具 |
DE102015205719B4 (de) | 2015-03-30 | 2022-08-18 | Siltronic Ag | Verfahren zum Beschichten von Halbleiterscheiben |
-
2015
- 2015-12-17 DE DE102015225663.4A patent/DE102015225663A1/de not_active Withdrawn
-
2016
- 2016-12-09 JP JP2018530582A patent/JP6697558B2/ja active Active
- 2016-12-09 EP EP16809795.4A patent/EP3390698B1/de active Active
- 2016-12-09 WO PCT/EP2016/080494 patent/WO2017102597A1/de active Application Filing
- 2016-12-09 CN CN201680074053.5A patent/CN108474133B/zh active Active
- 2016-12-09 KR KR1020187018476A patent/KR102210290B1/ko active IP Right Grant
- 2016-12-09 SG SG11201803914QA patent/SG11201803914QA/en unknown
- 2016-12-09 US US16/061,962 patent/US10961638B2/en active Active
- 2016-12-15 TW TW105141555A patent/TWI625781B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20180363165A1 (en) | 2018-12-20 |
TW201724248A (zh) | 2017-07-01 |
EP3390698B1 (de) | 2021-02-03 |
DE102015225663A1 (de) | 2017-06-22 |
US10961638B2 (en) | 2021-03-30 |
WO2017102597A1 (de) | 2017-06-22 |
KR20180087392A (ko) | 2018-08-01 |
CN108474133A (zh) | 2018-08-31 |
CN108474133B (zh) | 2022-01-14 |
TWI625781B (zh) | 2018-06-01 |
JP6697558B2 (ja) | 2020-05-20 |
EP3390698A1 (de) | 2018-10-24 |
JP2019504486A (ja) | 2019-02-14 |
KR102210290B1 (ko) | 2021-02-01 |
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