SG11201605463QA - Apparatus and method for the reduction of impurities in films - Google Patents

Apparatus and method for the reduction of impurities in films

Info

Publication number
SG11201605463QA
SG11201605463QA SG11201605463QA SG11201605463QA SG11201605463QA SG 11201605463Q A SG11201605463Q A SG 11201605463QA SG 11201605463Q A SG11201605463Q A SG 11201605463QA SG 11201605463Q A SG11201605463Q A SG 11201605463QA SG 11201605463Q A SG11201605463Q A SG 11201605463QA
Authority
SG
Singapore
Prior art keywords
impurities
films
reduction
Prior art date
Application number
SG11201605463QA
Other languages
English (en)
Inventor
Ian Mann
Satyanarayan Barik
Marie Wintrebert-Fouquet
Josh Brown
Paul Dunnigan
Original Assignee
Gallium Entpr Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2014900121A external-priority patent/AU2014900121A0/en
Application filed by Gallium Entpr Pty Ltd filed Critical Gallium Entpr Pty Ltd
Publication of SG11201605463QA publication Critical patent/SG11201605463QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32486—Means for reducing recombination coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
SG11201605463QA 2014-01-15 2015-01-15 Apparatus and method for the reduction of impurities in films SG11201605463QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2014900121A AU2014900121A0 (en) 2014-01-15 Apparatus and method for the reduction of impurities in rpcvd films
PCT/AU2015/050013 WO2015106318A1 (en) 2014-01-15 2015-01-15 Apparatus and method for the reduction of impurities in films

Publications (1)

Publication Number Publication Date
SG11201605463QA true SG11201605463QA (en) 2016-08-30

Family

ID=53542217

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201605463QA SG11201605463QA (en) 2014-01-15 2015-01-15 Apparatus and method for the reduction of impurities in films

Country Status (9)

Country Link
US (1) US11001926B2 (ko)
EP (1) EP3095305B1 (ko)
JP (1) JP6546927B2 (ko)
KR (1) KR102279673B1 (ko)
CN (1) CN105917748B (ko)
AU (1) AU2015207672B2 (ko)
SG (1) SG11201605463QA (ko)
TW (1) TWI651429B (ko)
WO (1) WO2015106318A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116995153A (zh) 2017-11-07 2023-11-03 盖利姆企业私人有限公司 掩埋活化p-(Al,In)GaN层
WO2021042170A1 (en) * 2019-09-04 2021-03-11 Gallium Enterprises Pty Ltd "rpcvd apparatus and methods for forming a film "
US11521834B2 (en) * 2020-08-26 2022-12-06 Tokyo Electron Limited Plasma processing systems and methods for chemical processing a substrate

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1222243A (en) * 1967-07-05 1971-02-10 Kearns Tribune Corp Generating plasma
JPH0567570A (ja) 1991-09-09 1993-03-19 Nippon Telegr & Teleph Corp <Ntt> 半導体結晶薄膜の成長装置
US5698168A (en) 1995-11-01 1997-12-16 Chorus Corporation Unibody gas plasma source technology
US5846883A (en) * 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
DE19706556C1 (de) 1997-02-19 1998-08-13 Heraeus Quarzglas Vorrichtung zum Ätzen oder zum Abscheiden unter Verwendung eines Plasmas sowie in der Vorrichtung verwendetes rohrförmiges Abschirmelement
US6120660A (en) * 1998-02-11 2000-09-19 Silicon Genesis Corporation Removable liner design for plasma immersion ion implantation
TW465017B (en) * 1999-04-13 2001-11-21 Applied Materials Inc A corrosion-resistant protective coating for an apparatus and method for processing a substrate
JP3625415B2 (ja) * 2000-04-20 2005-03-02 株式会社日清製粉グループ本社 酸化物封入ガラス微粒子の製造方法並びにこの方法により製造された酸化物封入ガラス微粒子
WO2004108979A1 (ja) * 2003-06-02 2004-12-16 Shincron Co., Ltd. 薄膜形成装置及び薄膜形成方法
AU2005289367B2 (en) * 2004-09-27 2009-12-03 Gallium Enterprises Pty Ltd Method and apparatus for growing a group (III) metal nitride film and a group (III) metal nitride film
CA2581626C (en) * 2004-09-27 2013-08-13 Gallium Enterprises Pty Ltd Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film
JP4572100B2 (ja) * 2004-09-28 2010-10-27 日本エー・エス・エム株式会社 プラズマ処理装置
US20070272299A1 (en) * 2004-12-03 2007-11-29 Mks Instruments, Inc. Methods and apparatus for downstream dissociation of gases
KR20080077642A (ko) * 2005-12-23 2008-08-25 엠케이에스 인스트루먼츠, 인코포레이티드 가스들의 다운스트림 해리용 방법들 및 장치들
KR20070081316A (ko) * 2006-02-10 2007-08-16 삼성전자주식회사 기판 처리 장치
US20080216958A1 (en) * 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8216640B2 (en) * 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
US8580092B2 (en) * 2010-01-29 2013-11-12 Applied Materials, Inc. Adjustable process spacing, centering, and improved gas conductance
JP5673924B2 (ja) * 2010-08-27 2015-02-18 国立大学法人名古屋大学 分子線エピタキシー装置
WO2012026113A1 (ja) * 2010-08-27 2012-03-01 国立大学法人名古屋大学 ラジカル源及び分子線エピタキシー装置
RU2604828C2 (ru) 2011-02-03 2016-12-10 Текна Плазма Системз Инк. Высокопроизводительный индукционный плазматрон
JP5989119B2 (ja) * 2011-08-19 2016-09-07 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． プラズマリアクタ及びプラズマを生成する方法
KR20130049364A (ko) * 2011-11-04 2013-05-14 피에스케이 주식회사 플라스마 공급 유닛 및 이를 포함하는 기판 처리 장치
US20130146225A1 (en) * 2011-12-08 2013-06-13 Mks Instruments, Inc. Gas injector apparatus for plasma applicator
KR20140089458A (ko) * 2013-01-04 2014-07-15 피에스케이 주식회사 플라즈마 챔버 및 기판 처리 장치
CN103410694B (zh) * 2013-08-27 2015-10-07 哈尔滨工业大学 一种磁场位形可调的多级会切磁场等离子体推力器

Also Published As

Publication number Publication date
JP2017509107A (ja) 2017-03-30
CN105917748B (zh) 2019-07-26
US11001926B2 (en) 2021-05-11
KR102279673B1 (ko) 2021-07-21
TW201531585A (zh) 2015-08-16
CN105917748A (zh) 2016-08-31
AU2015207672B2 (en) 2016-08-04
TWI651429B (zh) 2019-02-21
EP3095305A1 (en) 2016-11-23
WO2015106318A1 (en) 2015-07-23
KR20160108487A (ko) 2016-09-19
EP3095305B1 (en) 2018-08-29
JP6546927B2 (ja) 2019-07-17
US20160326649A1 (en) 2016-11-10
AU2015207672A1 (en) 2016-07-21
EP3095305A4 (en) 2017-08-30

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