SG11201500265PA - Device for producing a monocrystal by crystallizing said monocrystal in a melting area - Google Patents

Device for producing a monocrystal by crystallizing said monocrystal in a melting area

Info

Publication number
SG11201500265PA
SG11201500265PA SG11201500265PA SG11201500265PA SG11201500265PA SG 11201500265P A SG11201500265P A SG 11201500265PA SG 11201500265P A SG11201500265P A SG 11201500265PA SG 11201500265P A SG11201500265P A SG 11201500265PA SG 11201500265P A SG11201500265P A SG 11201500265PA
Authority
SG
Singapore
Prior art keywords
monocrystal
crystallizing
producing
melting area
melting
Prior art date
Application number
SG11201500265PA
Other languages
English (en)
Inventor
Georg Raming
Ludwig Altmannshofer
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201500265PA publication Critical patent/SG11201500265PA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/20Heating of the molten zone by induction, e.g. hot wire technique
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
SG11201500265PA 2012-08-02 2013-07-01 Device for producing a monocrystal by crystallizing said monocrystal in a melting area SG11201500265PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012213715.7A DE102012213715A1 (de) 2012-08-02 2012-08-02 Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone
PCT/EP2013/063825 WO2014019788A1 (fr) 2012-08-02 2013-07-01 Dispositif de fabrication d'un monocristal par cristallisation dudit monocristal au niveau d'une zone de fusion

Publications (1)

Publication Number Publication Date
SG11201500265PA true SG11201500265PA (en) 2015-04-29

Family

ID=48748201

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201500265PA SG11201500265PA (en) 2012-08-02 2013-07-01 Device for producing a monocrystal by crystallizing said monocrystal in a melting area

Country Status (9)

Country Link
US (1) US9932690B2 (fr)
EP (1) EP2880205B1 (fr)
JP (1) JP5951132B2 (fr)
KR (1) KR101683359B1 (fr)
CN (1) CN104540984B (fr)
DE (1) DE102012213715A1 (fr)
DK (1) DK2880205T3 (fr)
SG (1) SG11201500265PA (fr)
WO (1) WO2014019788A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108193262A (zh) * 2016-12-08 2018-06-22 有研半导体材料有限公司 一种用于拉制区熔单晶硅的反射器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL130822C (fr) * 1959-08-14
US3258314A (en) * 1963-04-12 1966-06-28 Westinghouse Electric Corp Method for interior zone melting of a crystalline rod
DE1275996B (de) * 1965-07-10 1968-08-29 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DK371977A (da) * 1977-08-22 1979-02-23 Topsil As Fremgangsmaade og apparat til raffinering af halvledermateriale
DE3007377A1 (de) 1980-02-27 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum tiegelfreien zonenschmelzen eines siliciumstabes
JPS6381867U (fr) 1986-11-12 1988-05-30
JP2874722B2 (ja) * 1993-06-18 1999-03-24 信越半導体株式会社 シリコン単結晶の成長方法及び装置
DE19711922A1 (de) 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
CN1109777C (zh) 1999-11-24 2003-05-28 中国科学院物理研究所 异型加热片区熔生长晶体的方法
US6663709B2 (en) * 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
US6797062B2 (en) * 2002-09-20 2004-09-28 Memc Electronic Materials, Inc. Heat shield assembly for a crystal puller
TWI263713B (en) * 2004-11-04 2006-10-11 Univ Nat Central Heat shield and crystal growth equipment
US8152921B2 (en) 2006-09-01 2012-04-10 Okmetic Oyj Crystal manufacturing
JP2008222481A (ja) 2007-03-12 2008-09-25 Hitachi Cable Ltd 化合物半導体の製造方法及び装置
JP2009001489A (ja) 2008-08-28 2009-01-08 Sumco Techxiv株式会社 単結晶の製造装置及び製造方法
DE102009051010B4 (de) 2009-10-28 2012-02-23 Siltronic Ag Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat
JP5126267B2 (ja) * 2010-03-25 2013-01-23 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶製造装置
CN102321910B (zh) 2011-10-11 2014-04-09 天津市环欧半导体材料技术有限公司 一种控制cfz硅单晶挥发物沉积的炉腔辅助装置及其方法
CN102321913B (zh) 2011-10-11 2014-03-05 天津市环欧半导体材料技术有限公司 一种拉制8英寸区熔硅单晶热***及工艺
CN102321911B (zh) 2011-10-12 2014-04-09 天津市环欧半导体材料技术有限公司 一种使用异形多晶料生产硅单晶的区熔炉控制***及控制方法

Also Published As

Publication number Publication date
EP2880205A1 (fr) 2015-06-10
US9932690B2 (en) 2018-04-03
DK2880205T3 (en) 2017-01-09
KR101683359B1 (ko) 2016-12-06
EP2880205B1 (fr) 2016-10-05
US20150203987A1 (en) 2015-07-23
CN104540984A (zh) 2015-04-22
KR20150013299A (ko) 2015-02-04
DE102012213715A1 (de) 2014-02-06
JP5951132B2 (ja) 2016-07-13
JP2015522518A (ja) 2015-08-06
CN104540984B (zh) 2017-02-22
WO2014019788A1 (fr) 2014-02-06

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