CN104540984A - 通过在熔化区使单晶结晶而制备单晶的装置 - Google Patents
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Abstract
本发明涉及用于通过在熔体区使单晶结晶而制备单晶的装置。所述装置包括壳体、用于在熔体区产生热的电感器、围绕结晶单晶并对其进行热辐射的再热器以及分隔底部，该分隔底部将再热器与壳体的壁之间的中间空间向下限定在再热器下端。
Description
本发明涉及通过在熔体区使单晶结晶而制备单晶的装置。该装置特别适用于制备单晶硅。
DE 3007377A1描述了这种装置的已知实施方案，以及被称为区熔法或FZ法的方法。该实施方案包括在其中容纳提拉轴和电感器的壳体。在提拉轴的上端，具有在其上使熔融硅结晶的晶种，最初形成具有缩小直径的部分，随后形成单晶。电感器(形成扁平线圈的RF感应加热线圈)使多晶硅在杆(rod)的下端熔化，并产生和稳定熔体区，其传递单晶生长所需要的材料。降低该多晶杆和单晶，以允许单晶的持续生长。
FZ(浮区)法的变体是GFZ(颗粒浮区)法，例如，其记载在US2011/0095018A1中。在GFZ法中，使用多晶颗粒代替杆作为原料。此外，提供两个感应加热线圈，第一感应加热线圈用于熔化颗粒，第二感应加热线圈用于通过在熔体区内产生热来稳定熔体区。
必须尽可能精确地控制熔体区内和冷却单晶内的温度场，特别是在结晶边界区域中的温度场。具体而言，必须抵消急剧变化的温度梯度，所述温度梯度引起热应力，并可能成为错位形成的起点，甚至于破裂破坏单晶的程度。为了控制温度场，已发现可有利地提供围绕生长单晶并反射辐射到生长单晶上的热辐射的反射器。
除了使用反射器，CN 10232191 A提出使用横向磁场，以抑制熔体区内的温度波动。
本发明的目的是，特别在结晶边界的区域中，避免温度场的破坏作用，温度场不能通过使用反射器或产生磁场而消除。
通过在熔体区使单晶结晶而制备单晶的装置实现该目的，该装置包括壳体、用于在熔体区产生热的电感器、围绕结晶单晶并向结晶单晶施加热辐射的再热器以及分隔底部，该分隔底部将再热器与壳体的壁之间的中间空间向下限定在再热器下端。
再热器优选是反射器或者有源辐射加热器(active radiating heater)，例如加热电阻器。
温度场的破坏是由例如氩气等保护气在壳体中的热膨胀引起的，其结果是热量被以不可控的方式从结晶单晶和熔体区引入。常规的措施，例如对壳体施加保护气的正压力以避免副反应和防止电感器或其电引线处的电火花，以及在结晶单晶的周围布置反射器，促进由保护气的热膨胀所激起的对流的产生。结晶单晶与反射器之间的中间空间因此充当通气口，其促进保护气的热膨胀。
本发明的目的是基本上防止保护气的破坏性热膨胀。该目的是由分隔底部来实现的，该分隔底部作为挡板阻挡流动的保护气。分隔底部以这样的方式布置在壳体中：在再热器与壳体的壁之间的中间空间由分隔底部向下限定在再热器下端。
进一步优选地，可能存在于再热器与分隔底部之间以及壳体的壁与分隔底部之间的间隙通过挡板被缩短或关闭，以更加有力地阻碍或者完全阻止保护气的热膨胀。合适的挡板的实例是金属环，例如钢环、银环，或石英玻璃环，其覆盖该间隙。壳体的壁与分隔底部之间的间隙优选覆盖有钢环，并且再热器与分隔底部之间的间隙优选覆盖有银环或石英玻璃环。
分隔底部的布置防止保护气以不受控制的方式从熔体区和结晶单晶吸热，并因此防止由温度场所致的破坏而发生的间接损害。此外，避免热吸收(heat extraction)还有其他的优点。可以减小电感器的加热功率，这使得诸如在电感器或在其电引线处较少发生电火花等事件，并降低结晶单晶内的热应力。
优选再热器的上边缘位于结晶边界的三相点的水平。再热器具有的轴向长度优选不超过所制备的单晶的直径的1.5倍。单晶和再热器之间的径向距离优选不超过30mm，特别优选的径向距离为10-20mm。
本发明优选用于制备具有较大直径(至少为150mm)的单晶硅。FZ法和GFZ方法可以设想为制备方法。
利用附图，下文对本发明进行更详细的说明。
图1是表示现有技术的示意图。
图2是本发明的示意图。
图1示出装置的截面图，该装置用于通过在熔体区使单晶结晶而制备单晶。该装置可以等同于现有技术。只显示了有助于解释本发明的特征。单晶1在熔体区2中生长，熔体区2由电感器3供热。在三相点ETP的水平布置有反射器4，其围绕结晶单晶并具有比所制备单晶的长度更短的轴向长度。反射器4把壳体的内部分隔成结晶单晶1与反射器4之间的中间空间以及反射器4与壳体的壁5之间的中间空间。空心箭头表示被热膨胀驱动的包含在壳体内的保护气流的闭合路径。
图2示出根据图1的装置和本发明另外的特征。对同一类型的特征提供有相同的附图数字。根据本发明的装置的特征在于分隔底部6，其向下限定了反射器4与壳体的壁5之间的中间空间。反射器4可以由有源辐射加热器来代替。与图1相比更细的空心箭头显示由热膨胀驱动的气流，其由于分隔底部6的设置而强烈地受阻。优选地，通过在分隔底部6的外侧设置挡板7，可以更强地阻碍气流，乃至全部阻断的程度，挡板7缩短或者关闭反射器4与分隔底部6之间的间隙，以及分隔底部6与壳体的壁5之间的间隙。
Claims (4)
1.用于通过在熔体区使单晶结晶而制备单晶的装置，其包括壳体、用于在熔体区产生热的电感器、围绕结晶单晶并向结晶单晶施加热辐射的再热器以及分隔底部，该分隔底部将再热器与壳体的壁之间的中间空间向下限定在再热器下端。
2.如权利要求1所述的装置，其特征在于所述再热器是反射器。
3.如权利要求1所述的装置，其特征在于所述再热器是有源辐射加热器。
4.如权利要求1-3中任一项所述的装置，其特征在于挡板被布置在分隔底部的外侧，并缩短或关闭再热器与分隔底部之间以及分隔底部与壳体的壁之间的间隙。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012213715.7A DE102012213715A1 (de) | 2012-08-02 | 2012-08-02 | Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone |
| DE102012213715.7 | 2012-08-02 | ||
| PCT/EP2013/063825 WO2014019788A1 (de) | 2012-08-02 | 2013-07-01 | Vorrichtung zur herstellung eines einkristalls durch kristallisieren des einkristalls an einer schmelzenzone |
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| CN104540984A true CN104540984A (zh) | 2015-04-22 |
| CN104540984B CN104540984B (zh) | 2017-02-22 |
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| US (1) | US9932690B2 (zh) |
| EP (1) | EP2880205B1 (zh) |
| JP (1) | JP5951132B2 (zh) |
| KR (1) | KR101683359B1 (zh) |
| CN (1) | CN104540984B (zh) |
| DE (1) | DE102012213715A1 (zh) |
| DK (1) | DK2880205T3 (zh) |
| SG (1) | SG11201500265PA (zh) |
| WO (1) | WO2014019788A1 (zh) |
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| CN108193262A (zh) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | 一种用于拉制区熔单晶硅的反射器 |
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2012
- 2012-08-02 DE DE102012213715.7A patent/DE102012213715A1/de not_active Withdrawn
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2013
- 2013-07-01 JP JP2015523474A patent/JP5951132B2/ja active Active
- 2013-07-01 DK DK13734717.5T patent/DK2880205T3/en active
- 2013-07-01 KR KR1020147035062A patent/KR101683359B1/ko active IP Right Grant
- 2013-07-01 US US14/417,967 patent/US9932690B2/en active Active
- 2013-07-01 SG SG11201500265PA patent/SG11201500265PA/en unknown
- 2013-07-01 EP EP13734717.5A patent/EP2880205B1/de active Active
- 2013-07-01 WO PCT/EP2013/063825 patent/WO2014019788A1/de active Application Filing
- 2013-07-01 CN CN201380037711.XA patent/CN104540984B/zh active Active
Patent Citations (8)
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| JPS6381867U (zh) * | 1986-11-12 | 1988-05-30 | ||
| CN1197128A (zh) * | 1997-03-21 | 1998-10-28 | 瓦克硅电子半导体材料股份公司 | 提拉单晶的装置及方法 |
| CN1300884A (zh) * | 1999-11-24 | 2001-06-27 | 中国科学院物理研究所 | 异型加热片区熔生长晶体的方法 |
| CN101548031A (zh) * | 2006-09-01 | 2009-09-30 | 欧米帝克公司 | 晶体制造 |
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| JP2009001489A (ja) * | 2008-08-28 | 2009-01-08 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 単結晶の製造装置及び製造方法 |
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| CN102321910A (zh) * | 2011-10-11 | 2012-01-18 | 天津市环欧半导体材料技术有限公司 | 一种控制cfz硅单晶挥发物沉积的炉腔辅助装置及其方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108193262A (zh) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | 一种用于拉制区熔单晶硅的反射器 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2880205A1 (de) | 2015-06-10 |
| SG11201500265PA (en) | 2015-04-29 |
| US9932690B2 (en) | 2018-04-03 |
| DK2880205T3 (en) | 2017-01-09 |
| KR101683359B1 (ko) | 2016-12-06 |
| EP2880205B1 (de) | 2016-10-05 |
| US20150203987A1 (en) | 2015-07-23 |
| KR20150013299A (ko) | 2015-02-04 |
| DE102012213715A1 (de) | 2014-02-06 |
| JP5951132B2 (ja) | 2016-07-13 |
| JP2015522518A (ja) | 2015-08-06 |
| CN104540984B (zh) | 2017-02-22 |
| WO2014019788A1 (de) | 2014-02-06 |
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