JP2015522518A - 溶融領域における単結晶の結晶化により単結晶を製造するための装置 - Google Patents
溶融領域における単結晶の結晶化により単結晶を製造するための装置 Download PDFInfo
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- JP2015522518A JP2015522518A JP2015523474A JP2015523474A JP2015522518A JP 2015522518 A JP2015522518 A JP 2015522518A JP 2015523474 A JP2015523474 A JP 2015523474A JP 2015523474 A JP2015523474 A JP 2015523474A JP 2015522518 A JP2015522518 A JP 2015522518A
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- single crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 238000002844 melting Methods 0.000 title claims abstract description 16
- 230000008018 melting Effects 0.000 title claims abstract description 16
- 238000002425 crystallisation Methods 0.000 title claims abstract description 9
- 230000008025 crystallization Effects 0.000 title claims abstract description 9
- 238000005192 partition Methods 0.000 claims abstract description 18
- 230000005855 radiation Effects 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 230000006698 induction Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000004323 axial length Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
Claims (4)
- 溶融ゾーンにおける単結晶の結晶化により単結晶を製造するための装置であって、
ハウジングと、
前記溶融ゾーンにおいて熱を発生させるためのインダクタと、
結晶化させる前記単結晶を囲み熱放射を前記単結晶に当てる再加熱器と、
前記再加熱器の下端において前記再加熱器と前記ハウジングの壁との間の中間空間の下方の境界を定める仕切り底部とを備える、装置。 - 前記再加熱器は反射体であることを特徴とする、請求項1に記載の装置。
- 前記再加熱器は能動放射加熱器であることを特徴とする、請求項1に記載の装置。
- 前記仕切り底部の外側部に配置され、前記再加熱器と前記仕切り底部との間の隙間および前記仕切り底部と前記ハウジングの壁との間の隙間を短くするかまたは閉じるバリアによって特徴付けられる、請求項1〜3のいずれか一項に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012213715.7A DE102012213715A1 (de) | 2012-08-02 | 2012-08-02 | Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone |
DE102012213715.7 | 2012-08-02 | ||
PCT/EP2013/063825 WO2014019788A1 (de) | 2012-08-02 | 2013-07-01 | Vorrichtung zur herstellung eines einkristalls durch kristallisieren des einkristalls an einer schmelzenzone |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015522518A true JP2015522518A (ja) | 2015-08-06 |
JP5951132B2 JP5951132B2 (ja) | 2016-07-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015523474A Active JP5951132B2 (ja) | 2012-08-02 | 2013-07-01 | 溶融領域における単結晶の結晶化により単結晶を製造するための装置 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9932690B2 (ja) |
EP (1) | EP2880205B1 (ja) |
JP (1) | JP5951132B2 (ja) |
KR (1) | KR101683359B1 (ja) |
CN (1) | CN104540984B (ja) |
DE (1) | DE102012213715A1 (ja) |
DK (1) | DK2880205T3 (ja) |
SG (1) | SG11201500265PA (ja) |
WO (1) | WO2014019788A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108193262A (zh) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | 一种用于拉制区熔单晶硅的反射器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6381867U (ja) * | 1986-11-12 | 1988-05-30 | ||
JP2009001489A (ja) * | 2008-08-28 | 2009-01-08 | Sumco Techxiv株式会社 | 単結晶の製造装置及び製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL130822C (ja) * | 1959-08-14 | |||
US3258314A (en) * | 1963-04-12 | 1966-06-28 | Westinghouse Electric Corp | Method for interior zone melting of a crystalline rod |
DE1275996B (de) * | 1965-07-10 | 1968-08-29 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
DK371977A (da) * | 1977-08-22 | 1979-02-23 | Topsil As | Fremgangsmaade og apparat til raffinering af halvledermateriale |
DE3007377A1 (de) | 1980-02-27 | 1981-09-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum tiegelfreien zonenschmelzen eines siliciumstabes |
JP2874722B2 (ja) * | 1993-06-18 | 1999-03-24 | 信越半導体株式会社 | シリコン単結晶の成長方法及び装置 |
DE19711922A1 (de) | 1997-03-21 | 1998-09-24 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
CN1109777C (zh) | 1999-11-24 | 2003-05-28 | 中国科学院物理研究所 | 异型加热片区熔生长晶体的方法 |
US6663709B2 (en) * | 2001-06-26 | 2003-12-16 | Memc Electronic Materials, Inc. | Crystal puller and method for growing monocrystalline silicon ingots |
US6797062B2 (en) * | 2002-09-20 | 2004-09-28 | Memc Electronic Materials, Inc. | Heat shield assembly for a crystal puller |
TWI263713B (en) * | 2004-11-04 | 2006-10-11 | Univ Nat Central | Heat shield and crystal growth equipment |
US8152921B2 (en) | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
JP2008222481A (ja) | 2007-03-12 | 2008-09-25 | Hitachi Cable Ltd | 化合物半導体の製造方法及び装置 |
DE102009051010B4 (de) | 2009-10-28 | 2012-02-23 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
JP5126267B2 (ja) * | 2010-03-25 | 2013-01-23 | 信越半導体株式会社 | シリコン単結晶の製造方法およびシリコン単結晶製造装置 |
CN102321910B (zh) | 2011-10-11 | 2014-04-09 | 天津市环欧半导体材料技术有限公司 | 一种控制cfz硅单晶挥发物沉积的炉腔辅助装置及其方法 |
CN102321913B (zh) | 2011-10-11 | 2014-03-05 | 天津市环欧半导体材料技术有限公司 | 一种拉制8英寸区熔硅单晶热***及工艺 |
CN102321911B (zh) | 2011-10-12 | 2014-04-09 | 天津市环欧半导体材料技术有限公司 | 一种使用异形多晶料生产硅单晶的区熔炉控制***及控制方法 |
-
2012
- 2012-08-02 DE DE102012213715.7A patent/DE102012213715A1/de not_active Withdrawn
-
2013
- 2013-07-01 JP JP2015523474A patent/JP5951132B2/ja active Active
- 2013-07-01 DK DK13734717.5T patent/DK2880205T3/en active
- 2013-07-01 KR KR1020147035062A patent/KR101683359B1/ko active IP Right Grant
- 2013-07-01 US US14/417,967 patent/US9932690B2/en active Active
- 2013-07-01 SG SG11201500265PA patent/SG11201500265PA/en unknown
- 2013-07-01 EP EP13734717.5A patent/EP2880205B1/de active Active
- 2013-07-01 WO PCT/EP2013/063825 patent/WO2014019788A1/de active Application Filing
- 2013-07-01 CN CN201380037711.XA patent/CN104540984B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6381867U (ja) * | 1986-11-12 | 1988-05-30 | ||
JP2009001489A (ja) * | 2008-08-28 | 2009-01-08 | Sumco Techxiv株式会社 | 単結晶の製造装置及び製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2880205A1 (de) | 2015-06-10 |
SG11201500265PA (en) | 2015-04-29 |
US9932690B2 (en) | 2018-04-03 |
DK2880205T3 (en) | 2017-01-09 |
KR101683359B1 (ko) | 2016-12-06 |
EP2880205B1 (de) | 2016-10-05 |
US20150203987A1 (en) | 2015-07-23 |
CN104540984A (zh) | 2015-04-22 |
KR20150013299A (ko) | 2015-02-04 |
DE102012213715A1 (de) | 2014-02-06 |
JP5951132B2 (ja) | 2016-07-13 |
CN104540984B (zh) | 2017-02-22 |
WO2014019788A1 (de) | 2014-02-06 |
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