CN102321911B - 一种使用异形多晶料生产硅单晶的区熔炉控制***及控制方法 - Google Patents
一种使用异形多晶料生产硅单晶的区熔炉控制***及控制方法 Download PDFInfo
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- CN102321911B CN102321911B CN201110308209.0A CN201110308209A CN102321911B CN 102321911 B CN102321911 B CN 102321911B CN 201110308209 A CN201110308209 A CN 201110308209A CN 102321911 B CN102321911 B CN 102321911B
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- 238000004857 zone melting Methods 0.000 title claims abstract description 74
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010703 silicon Substances 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 title abstract 4
- 239000013598 vector Substances 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 21
- 238000005259 measurement Methods 0.000 claims description 7
- 238000005070 sampling Methods 0.000 claims description 4
- 230000002459 sustained effect Effects 0.000 claims description 4
- 241001269238 Data Species 0.000 claims description 3
- 238000003723 Smelting Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 abstract description 6
- 230000008018 melting Effects 0.000 abstract description 6
- 230000005012 migration Effects 0.000 abstract description 4
- 238000013508 migration Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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Abstract
Description
Time | 偏移向量 | 中心向量 | t后偏移向量 |
16:05 | (0,0) | (1,1) | (-1,-1) |
16:06 | (0,0) | (0,1) | (0,-1) |
16:07 | (0,0) | (1,0) | (-1,0) |
16:08 | (0,0) | (0,0) | (0,0) |
16:09 | (0,0) | (0,0) | (0,0) |
16:10 | (-1,-1) | (-,) | (-,-) |
16:11 | (0,-1) | ||
16:12 | (-1,0) | ||
16:13 | (0,0) | ||
16:14 | (0,0) | ||
16:15 | (-,-) |
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CN201110308209.0A CN102321911B (zh) | 2011-10-12 | 2011-10-12 | 一种使用异形多晶料生产硅单晶的区熔炉控制***及控制方法 |
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CN201110308209.0A CN102321911B (zh) | 2011-10-12 | 2011-10-12 | 一种使用异形多晶料生产硅单晶的区熔炉控制***及控制方法 |
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CN102321911A CN102321911A (zh) | 2012-01-18 |
CN102321911B true CN102321911B (zh) | 2014-04-09 |
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Families Citing this family (3)
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DE102012213715A1 (de) | 2012-08-02 | 2014-02-06 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone |
CN109579740A (zh) * | 2017-04-20 | 2019-04-05 | 浙江富通光纤技术有限公司 | 光纤预制棒的测量装置 |
CN110727238A (zh) * | 2019-11-07 | 2020-01-24 | 府谷县旭丽机电技术有限公司 | 一种双工位等离子熔敷设备控制***及方法 |
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2011
- 2011-10-12 CN CN201110308209.0A patent/CN102321911B/zh active Active
Non-Patent Citations (5)
Title |
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Φ105mm区熔硅单晶的生长工艺研究;郭立洲;《稀有金属》;20021110(第06期);第514-516页 * |
我国人工晶体生长设备的回顾与展望;李留臣等;《人工晶体学报》;20020630(第03期);第328-331页 * |
李留臣等.我国人工晶体生长设备的回顾与展望.《人工晶体学报》.2002,(第03期), |
沈浩平,李翔,昝兴利,汪雨田等.CFZ单晶的生产及特点.《半导体杂志》.1998,(第03期), * |
郭立洲.Φ105mm区熔硅单晶的生长工艺研究.《稀有金属》.2002,(第06期), |
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