SG109978A1 - Highly heat-resistant plasma etching electrode and dry etching device including the same - Google Patents

Highly heat-resistant plasma etching electrode and dry etching device including the same

Info

Publication number
SG109978A1
SG109978A1 SG200204184A SG200204184A SG109978A1 SG 109978 A1 SG109978 A1 SG 109978A1 SG 200204184 A SG200204184 A SG 200204184A SG 200204184 A SG200204184 A SG 200204184A SG 109978 A1 SG109978 A1 SG 109978A1
Authority
SG
Singapore
Prior art keywords
same
device including
highly heat
dry etching
electrode
Prior art date
Application number
SG200204184A
Other languages
English (en)
Inventor
Yamaguchi Akira
Tomita Shuji
Original Assignee
Nisshin Spinning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nisshin Spinning filed Critical Nisshin Spinning
Publication of SG109978A1 publication Critical patent/SG109978A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/3255Material
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/04Carbon
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C08L2666/14Macromolecular compounds according to C08L59/00 - C08L87/00; Derivatives thereof
    • C08L2666/20Macromolecular compounds having nitrogen in the main chain according to C08L75/00 - C08L79/00; Derivatives thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Plasma Technology (AREA)
SG200204184A 2002-04-22 2002-07-10 Highly heat-resistant plasma etching electrode and dry etching device including the same SG109978A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002118861 2002-04-22
JP2002187529A JP3868341B2 (ja) 2002-04-22 2002-06-27 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置

Publications (1)

Publication Number Publication Date
SG109978A1 true SG109978A1 (en) 2005-04-28

Family

ID=28793605

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200204184A SG109978A1 (en) 2002-04-22 2002-07-10 Highly heat-resistant plasma etching electrode and dry etching device including the same

Country Status (7)

Country Link
US (1) US6818097B2 (ja)
EP (1) EP1357576A3 (ja)
JP (1) JP3868341B2 (ja)
KR (1) KR20030084540A (ja)
CN (1) CN1453830A (ja)
SG (1) SG109978A1 (ja)
TW (1) TW552638B (ja)

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US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
WO2003100817A1 (en) * 2002-05-23 2003-12-04 Lam Research Corporation Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode
US7795153B2 (en) 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7901952B2 (en) 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
JP4118194B2 (ja) * 2003-06-02 2008-07-16 横河電機株式会社 洗浄装置
US20060169209A1 (en) * 2005-02-01 2006-08-03 Tokyo Electon Limited Substrate processing apparatus, substrate processing method, and storage medium storing program for implementing the method
KR100708321B1 (ko) 2005-04-29 2007-04-17 주식회사 티씨케이 플라즈마 식각장치의 캐소드 전극 결합구조
US8789493B2 (en) 2006-02-13 2014-07-29 Lam Research Corporation Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
JP4935149B2 (ja) * 2006-03-30 2012-05-23 東京エレクトロン株式会社 プラズマ処理用の電極板及びプラズマ処理装置
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
KR100813106B1 (ko) * 2007-09-19 2008-03-17 다이섹(주) 가압접합된 캐소드 및 그 제조방법
US8152954B2 (en) 2007-10-12 2012-04-10 Lam Research Corporation Showerhead electrode assemblies and plasma processing chambers incorporating the same
US8187414B2 (en) * 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
KR100977315B1 (ko) 2008-04-10 2010-08-23 티씨비코리아(주) 플라즈마 챔버용 캐소드 전극 및 그 제조방법
US8679288B2 (en) 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8449679B2 (en) 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
TWI511619B (zh) * 2009-07-03 2015-12-01 Advanced Micro Fab Equip Inc Electrode elements for plasma processing, internal components and methods for their manufacture and separation
US20110159266A1 (en) * 2009-12-29 2011-06-30 3M Innovative Properties Company Epoxy compositions and surfacing films therefrom
JP5713182B2 (ja) * 2011-01-31 2015-05-07 三菱マテリアル株式会社 プラズマエッチング用シリコン電極板
JP2014035888A (ja) * 2012-08-09 2014-02-24 Toyota Motor Corp 全固体電池及びその製造方法
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
US8893702B2 (en) 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses
CN104974469B (zh) * 2015-07-07 2017-11-28 苏州生益科技有限公司 一种树脂组合物及使用其制作的半固化片及层压板
JP3208344U (ja) * 2015-11-16 2017-01-05 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 低蒸気圧のエアゾールに支援されるcvd
US10273577B2 (en) * 2015-11-16 2019-04-30 Applied Materials, Inc. Low vapor pressure aerosol-assisted CVD
JP6146841B1 (ja) * 2016-08-04 2017-06-14 日本新工芯技株式会社 リング状電極
CN108329032B (zh) * 2017-12-21 2021-02-23 山东道普安制动材料有限公司 一种汽车碳陶刹车盘的修复方法
CN108336181B (zh) * 2018-01-24 2019-11-01 南通鸿图健康科技有限公司 一种太阳能电池及其制备方法
US20200385866A1 (en) * 2019-06-08 2020-12-10 Applied Materials, Inc. Rf components with chemically resistant surfaces
WO2020252020A1 (en) * 2019-06-12 2020-12-17 Lam Research Corporation Sealant coating for plasma processing chamber components
CN111048395A (zh) * 2019-12-26 2020-04-21 苏州珮凯科技有限公司 8寸晶圆制造蚀刻机台Unity-85核心零部件上部电极表面制程物的去除方法

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JPH0758086A (ja) * 1993-08-11 1995-03-03 Ibiden Co Ltd プラズマエッチング用電極板
JPH0799183A (ja) * 1993-09-28 1995-04-11 Nisshinbo Ind Inc プラズマエッチング電極、その治具及びそれらの製造方法
US5871609A (en) * 1992-06-12 1999-02-16 Nisshinbo Industries, Inc Electrode plate and jig for use in plasma etching
US5951814A (en) * 1996-04-22 1999-09-14 Nisshinbo Industries, Inc. Electrode for plasma etching
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof

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US5223584A (en) * 1989-07-11 1993-06-29 Gencorp Inc. In situ thermoset molecular composites
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JPH0616907A (ja) * 1992-06-29 1994-01-25 Nisshinbo Ind Inc 導電性組成物及び該導電性組成物による接着剤又は塗料
US5576398A (en) * 1995-07-07 1996-11-19 Japan Synthetic Rubber Co., Ltd. Thermosetting resin composition
JPH09241353A (ja) * 1996-03-13 1997-09-16 Japan Synthetic Rubber Co Ltd エポキシ樹脂用硬化剤
US6083644A (en) * 1996-11-29 2000-07-04 Seiko Instruments Inc. Non-aqueous electrolyte secondary battery
JP3467400B2 (ja) * 1998-01-13 2003-11-17 日清紡績株式会社 液状封止材用樹脂組成物及び液状封止材
EP0943642A1 (en) * 1998-03-20 1999-09-22 Nisshinbo Industries, Inc. Polycarbodiimide copolymer and process for production thereof
JP3482153B2 (ja) * 1999-04-09 2003-12-22 住友ベークライト株式会社 半導体用ダイアタッチペースト
JP2002093777A (ja) * 2000-07-11 2002-03-29 Nisshinbo Ind Inc ドライエッチング装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5871609A (en) * 1992-06-12 1999-02-16 Nisshinbo Industries, Inc Electrode plate and jig for use in plasma etching
JPH0758086A (ja) * 1993-08-11 1995-03-03 Ibiden Co Ltd プラズマエッチング用電極板
JPH0799183A (ja) * 1993-09-28 1995-04-11 Nisshinbo Ind Inc プラズマエッチング電極、その治具及びそれらの製造方法
US5951814A (en) * 1996-04-22 1999-09-14 Nisshinbo Industries, Inc. Electrode for plasma etching
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof

Also Published As

Publication number Publication date
EP1357576A3 (en) 2006-04-26
JP2004006561A (ja) 2004-01-08
EP1357576A2 (en) 2003-10-29
US6818097B2 (en) 2004-11-16
JP3868341B2 (ja) 2007-01-17
TW552638B (en) 2003-09-11
CN1453830A (zh) 2003-11-05
US20030196759A1 (en) 2003-10-23
KR20030084540A (ko) 2003-11-01

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